Crystallization of Amorphous Si Thin Films Using a Viscous Ni Solution

2000 ◽  
Vol 621 ◽  
Author(s):  
Jin Hyung Ahn ◽  
Sung Chul Kim ◽  
Byung Tae Ahn
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Propylene Glycol ◽  
Crystallization Temperature ◽  
Spin Coating ◽  
Direct Contact ◽  
Viscous Solution ◽  
Amorphous Si ◽  
Si Films

ABSTRACTWe prepared a viscous Ni solution by dissolving NiCl2 in 1N HCl and mixing it with propylene glycol to control the amount of Ni on Si surface. A uniform film was formed after spin coating and oven dry. The a-Si films deposited by LPCVD with Si2H6 gas were crystallized more uniformly and more reproducibly. And the crystallization was enhanced from 600°C, 30h to 500°C, 10h. The surface roughness of poly-Si film crystallized with the viscous solution was much smaller than that of poly-Si film crystallized from Ni/Si direct contact. The TFT mobility was improved even though the crystallization temperature was much lower.

Photoluminescence of Chemically Etched Polycrystalline and Amorphous Si Thin Films

1993 ◽  
Vol 298 ◽  
Author(s):  
A. J. Steckl ◽  
J. Xu ◽  
H. C. Mogul
Keyword(s):  
Thin Films ◽  
Strong Relationship ◽  
Porous Si ◽  
X Ray Diffraction ◽  
X Ray ◽  
Amorphous Si ◽  
Si Films ◽  
Uv Excitation ◽  
Highly Porous ◽  
Stain Etching

AbstractSi thin films were deposited on quartz at temperatures ( TD ) ranging from 540 to 640°C. X-ray diffraction indicates that films deposited at TD < 580°C are amorphous, while those deposited above 600°C are poly-crystalline with a <220> texture. The Si films were made porous by stain-etching in HF:HNO3:H2O. Only Si films deposited at 590°C and above show photoluminescence (PL), centered at ∼650-670 nm under UV excitation. Films deposited at TD < 580°C do not luminesce even after very long etch times, which produce a highly porous structure. The PL intensity and the x-ray signal follow a very similar trend with TD. It appears that a minimum level of crystallinity is required for photoemission in porous Si and that a strong relationship exists between them.

Effect of Annealing Atmosphere on the Morphology of Copper Oxide Thin Films Deposited on TiO2 Substrates Prepared by Sol-Gel Process

2013 ◽  
Vol 594-595 ◽  
pp. 113-117 ◽  
Author(s):  
Dewi Suriyani Che Halin ◽  
Ibrahim Abu Talib ◽  
Abdul Razak Daud ◽  
Muhammad Azmi Abdul Hamid
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Grain Size ◽  
Copper Oxide ◽  
Spin Coating ◽  
Sol Gel ◽  
Annealing Atmosphere ◽  
Oxide Thin Films ◽  
Different Temperatures ◽  
Xrd Patterns

Copper oxide films were prepared via sol-gel like spin coating starting from methanolic solutions of cupric chloride onto the TiO2 substrates. Films were obtained by spin coating under room conditions (temperature, 25-30 °C) and were subsequently annealed at different temperatures (200-400 °C) in oxidizing (air) and inert (N2) atmospheres. X-ray diffraction (XRD) patterns showed crystalline phases, which were observed as a function of the annealing conditions. The film composition resulted single or multi-phasic depending on both temperature and atmosphere. The grain size of film was measured using scanning electron microscopy (SEM) and the surface roughness of thin films was characterized by atomic force microscopy (AFM). The grain size of which was annealed in air at 300 °C was 30.39 nm with the surface roughness of 96.16 nm. The effects of annealing atmosphere on the structure and morphology of copper oxide thin films are reported.

Enhanced Low-Temperature Crystallization of Amorphous Si Films Using AlCl3 Vapor

2001 ◽  
Vol 685 ◽  
Author(s):  
Jin Hyung Ahn ◽  
Ji Hye Eom ◽  
Byung Tae Ahn
Keyword(s):  
Detection Limit ◽  
Low Temperature ◽  
Rough Surface ◽  
Direct Contact ◽  
Metal Film ◽  
Low Temperature Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Temperature Crystallization

AbstractIt is known that the direct contact between Al and a-Si enhances the crystallization of a-Si film. But the poly-Si films crystallized by the direct contact of Al metal film suffer the problems of rough surface and pores. In our study, we utilized the vapor from AlCl3 instead of Al metal film. The crystallization was enhanced by annealing a-Si films with AlCl3 that the crystallization was completed in 5h at 540. And the surface was as smooth as that of the a-Si film. The Al incorporation into the poly-Si film took place, but the content was below the detection limit of AES.

A Study on the Metal Induced Lateral Crystallization Behavior of Amorphous Silicon Thin Films

1996 ◽  
Vol 441 ◽  
Author(s):  
Byung-Il Lee ◽  
Kwang-Ho Kim ◽  
Won-Cheol Jeong ◽  
Pyung-Su Ahn ◽  
Jin-Wook Shin ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Crystallization Behavior ◽  
Crystallization Rate ◽  
External Stress ◽  
Tem Analysis ◽  
Silicon Thin Films ◽  
Amorphous Si ◽  
Lateral Crystallization ◽  
Si Films

AbstractBasic mechanisms for both Ni- and Pd-metal induced lateral crystallization (MILC) are investigated. For both cases, tiny silicides were formed under the metal deposited area, and propagated toward amorphous Si films leaving crystallized Si behind at temperatures as low as 500 °C. Ni-MILC was influenced by Pd such that the lateral crystallization rate was enhanced, and the temperature for the lateral crystallization was lowered to 450 °C. Through TEM analysis and external stress experiments, it was found that the enhancement of the lateral crystallization rate was closely related to the compressive stress generated by the formation of nearby Pd2Si.

The effect of Er doping on the crystallization of Ge1−xSnx thin films

2021 ◽  
pp. 2150337
Author(s):  
Baijie Xia ◽  
Zhaoshi Dong ◽  
Chunwang Zhao
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
High Temperature ◽  
Crystallization Temperature ◽  
Thermal Evaporation ◽  
Er Doping ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Er Doped

The Er-doped [Formula: see text] thin films with different Sn contents were prepared on Ge buffered Si substrates by thermal evaporation. The effect of Er doping on the crystallization of [Formula: see text] films at different annealing temperatures was studied. It is demonstrated that Er doping can increase the critical crystallization temperature and greatly reduce the surface roughness of high temperature annealed [Formula: see text] thin films.

Effect of Bi dopant on morphological and optical properties of ZnO semiconductor films produced by the sol-gel spin coating process

2021 ◽  
Vol 63 (8) ◽  
pp. 778-782
Author(s):  
Tülay Yıldız ◽  
Nida Katı ◽  
Kadriye Yalçın
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Optical Properties ◽  
Spin Coating ◽  
Sol Gel ◽  
Zno Thin Film ◽  
Spin Coating Method ◽  
Coating Method ◽  
Doped Zno

Abstract In this study, undoped semiconductor ZnO thin film and Bi-doped ZnO thin films were produced using the sol-gel spin coating method. By changing each parameter of the spin coating method, the best conditions for the formation of the film were determined via the trial and error method. When the appropriate parameter was found, the specified parameter was applied for each film. The structural, superficial, and optical properties of the films produced were characterized via atomic force microscope (AFM), UV-visible spectroscopy, and Fourier transform infrared (FTIR), and the effects of Bi dopant on these properties were investigated. When the morphological properties of the undoped and Bi-doped ZnO films were examined, it was observed that they had a structure in a micro-fiber shape consisting of nanoparticles. When the surface roughness was examined, it was observed that the surface roughness values became larger as the rate of Bi dopant increased. By examining the optical properties of the films, it was determined that they were direct band transition materials and Bi-doped thin films were involved in the semiconductor range. In addition, optical properties changed positively with Bi dopant. Since Bi-doped ZnO thin film has a wide bandgap and good optical properties, it is a material that can be used in optoelectronic applications.

scholarly journals Interface Velocity Transients During Melting of a-Si/C-Si Thin Films

1988 ◽  
Vol 100 ◽  
Author(s):  
J. Y. Tsao ◽  
M. J. Aziz ◽  
P. S. Peercy ◽  
M. O. Thompson
Keyword(s):  
Thin Films ◽  
Steady State ◽  
Pulsed Laser ◽  
Interface Velocity ◽  
Interface Temperature ◽  
Laser Melting ◽  
Systematic Procedure ◽  
Solid Interface ◽  
Amorphous Si ◽  
Si Films

ABSTRACTWe report transient conductance measurements of liquid/solid interface velocities during pulsed laser melting of amorphous Si (a-Si) films on crystalline Si (c-Si), and a more accurate, systematic procedure for analyzing these measurements than described in previous work [1]. From these analyses are extracted relations between the melting velocities of a-Si and c-Si at a given interface temperature, and between the temperatures during steady-state melting of a-Si and c-Si at a given interface velocity.

Multi-Layer Microstructure of Sol-Gel Barium Titanate Thin Films for Optical Waveguide Applications

2015 ◽  
Vol 815 ◽  
pp. 136-140
Author(s):  
S.H. Najamudin ◽  
H.Mohd Yusof ◽  
Ala’eddin A. Saif ◽  
R.A. Osman ◽  
P. Poopalan
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Barium Titanate ◽  
Optical Waveguide ◽  
Spin Coating ◽  
Sol Gel ◽  
Xrd Analysis ◽  
Diffraction Intensity ◽  
Number Of Layers ◽  
Crucial Part

— Barium titanate (BaTiO3) thin films are suitable for many application especially photonics. BaTiO3thin films are deposited using spin coating with an optimum spin speed of 4500rpm. The samples are then characterized using XRD, AFM and SEM. The results of the XRD analysis showed that both the 5-and 10-coated layers are polycrystalline BaTiO3with differences in terms of diffraction intensity, due to the number of layers. As for optical application, the surface roughness is the most crucial part. The number of layers of 5 and 10 have thickness of 2.927nm and 4.456nm RMS.

Synthesis of ZnO Thin Film on Porous Silicon by Spin Coating in Various Low Molarities Precursor

2013 ◽  
Vol 701 ◽  
pp. 167-171 ◽  
Author(s):  
Kevin Alvin Eswar ◽  
Azlinda Ab Azlinda ◽  
F.S. Husairi ◽  
M. Rusop ◽  
Saifollah Abdullah
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Porous Silicon ◽  
Spin Coating ◽  
Substrate Surface ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Coating Method ◽  
P Type

Zinc acetate dehydrate as starting material along with diethanolamine as stabilizer, and isopropyl as a solvent were used to synthesis ZnO thin films in different low molarities. Sol-gel spin coating method was used in depositing ZnO on porous silicon substrate surface. In other to prepare substrate, p-type silicon wafer was etched by dilute hydrofluoric acid to modify the surface becomes porous. Field Emission Scanning Electron Microscopy (FESEM) was employed to study the surface morphology. It is found that ZnO thin films were successfully deposited on the substrates which are composed of ZnO nanoparticles with size ~16 nm to ~22nm. Atomic Force Microscopy (AFM) was used to investigate the surface roughness of thin film. The result shows that the surface roughness is increase as the increases of molarities. Photoluminescence (PL) spectra were done in range of 350 nm to 800 nm. The result shows peaks belonging to ZnO, ZnO defects, and porous silicon respectively are appeared.

Solution-Based Metal Induced Crystallization of Amorphous Silicon Films

2013 ◽  
Vol 652-654 ◽  
pp. 1765-1768
Author(s):  
Xiao Lei Qu ◽  
Jing Jin ◽  
Wei Min Shi ◽  
Yu Feng Qiu ◽  
Lu Huang ◽  
...  
Keyword(s):  
Grain Size ◽  
High Temperature ◽  
Amorphous Silicon ◽  
Spin Coating ◽  
Annealing Process ◽  
Crystalline Fraction ◽  
Metal Induced Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Induced Crystallization

A viscous Nickel (Ni) solution was applied on amorphous Si films by spin coating and its effect on the crystallization of amorphous Si films was investigated with a two-step annealing process. The experimental results show that with the help of the two-step annealing, the crystallization of the film can take place at 500oC. At the same time, the crystalline fraction gets up to 79.4% after annealing at a high temperature of 520oC and the grain size of the polycrystalline Si films is approximately 200 nm.

Sign in / Sign up

Export Citation Format

Share Document