ZnO-Ge MULTILAYER THIN FILM STRUCTURES DEPOSITED BY THERMAL EVAPORATION TECHNIQUE

2019 ◽  
Vol 27 (05) ◽  
pp. 1950149
Author(s):  
NAEEM UR-REHMAN ◽  
MAZHAR MEHMOOD ◽  
ABDUL FAHEEM KHAN ◽  
SYED MANSOOR ALI ◽  
M. ASHRAF
Keyword(s):  
Quantum Confinement ◽  
Thermal Evaporation ◽  
Quantum Confinement Effect ◽  
Heating System ◽  
Electron Beam Evaporation ◽  
Electrical Parameters ◽  
Rutherford Back Scattering ◽  
Back Scattering ◽  
Evaporation Technique ◽  
Deposited Films

Zinc oxide and germanium multilayer films have been deposited on glass substrate using electron beam evaporation and resistive heating system, respectively, for alternate layers. The structural optical and electrical parameters have been investigated for the deposited films. The layer formation was confirmed by employing Rutherford back-scattering technique. Optical properties exhibit quantum confinement effect by showing the separate band gaps for ZnO and Ge. Electrical conductivity increases due to combined effect of all six layers (six alternate layers of Ge and ZnO).

Tunnel Type Magnetoresistance in Electron Beam Deposited Films of Compositions (Co0.5Fe0.5)x(Al2O3)(100-x) (7 ≤ x ≤ 52)

1999 ◽  
Vol 602 ◽  
Author(s):  
H.R. Khan ◽  
A. Ya Vovk ◽  
A.F. Kravets ◽  
O.V. Shipil ◽  
A.N. Pogoriliy
Keyword(s):  
Electron Beam ◽  
Room Temperature ◽  
Electron Beam Evaporation ◽  
Tunneling Magnetoresistance ◽  
Metal Insulator ◽  
Glass Substrates ◽  
Electron Beam Evaporation Technique ◽  
Crystallite Sizes ◽  
Evaporation Technique ◽  
Deposited Films

AbstractA series of 400 nm thick metal-insulator films of compositions (Co50Fe50)x(Al2O3(100-x) (7 ≤ x ≤ 52; x is in vol.%) are deposited on glass substrates using dual electron beam evaporation technique. The films are nanocrystalline with crystallite sizes of 1-3 nm. Resistivity of the films varies as a function of (I/T)0.5 showing a tunneling type behaviour. The films show isotropic and negative magnetoresistance (GMR). A film of composition (Co50Fe50)82.5(Al2O3)17.5 show maximum tunneling magnetoresistance (TMR) of 7.2% at room temperature and in a magnetic field of 8.2 kOe.

Growth and Characterization of PbI2 Thin Films by Vacuum Thermal Evaporation

2013 ◽  
Vol 24 ◽  
pp. 1-6 ◽  
Author(s):  
Harshita Agrawal ◽  
A.G. Vedeshwar ◽  
Vibhav K. Saraswat
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Band Gap ◽  
Fiber Optics ◽  
Thermal Evaporation ◽  
Quantum Confinement Effect ◽  
X Ray Diffraction ◽  
Lead Iodide ◽  
Size Growth ◽  
Evaporation Technique

The aim of this study was to investigate the morphology and optical absorption of PbI2 thin films. PbI2 films of different thickness were deposited on glass substrate at ambient temperature by thermal evaporation technique. The deposition rate was optimized at 1-2 nm/s to grow uniform good quality films. The structural analysis of the films was carried out by X-ray diffraction (XRD). The morphology of so prepared films was studied by Scanning Electron Microscope (SEM). The absorption spectra were recorded using a UV-Vis fiber optics based spectrophotometer. All the measurements in the present work were carried out at room temperature (~300 K). PbI2 seems to have a very strong affinity for the growth of preferred (001) orientation. The d spacing of (00l) peaks match quite well with ASTM data for 2H polytype of PbI2 which confirms the stoichiometry. A uniform spherical grain size growth is clearly evident from SEM micrographs. Optical absorption analysis indicates that the Lead Iodide is having a direct optical band gap of about 2.45 eV. The variation of band gap with film thickness could be qualitatively understood as due to the quantum confinement effect.

Microstructure Evolution of On-substrate NiTi Shape Memory Alloy Thin Films

2003 ◽  
Vol 795 ◽  
Author(s):  
Xi Wang ◽  
Ann Lai ◽  
Joost J. Vlassak ◽  
Yves Bellouard
Keyword(s):  
Thin Films ◽  
Shape Memory Alloy ◽  
Shape Memory ◽  
Niti Shape Memory Alloy ◽  
Functional Material ◽  
Rutherford Back Scattering ◽  
Transmission Electron ◽  
Back Scattering ◽  
Annealing Study ◽  
Deposited Films

ABSTRACTWhen deposited at room temperature, sputtered NiTi thin films are amorphous and need to be crystallized before they can be used as a functional material. We present the results of an annealing study on substrate-constrained NiTi shape memory thin films. Amorphous films of a NiTi shape memory alloy were deposited by UHV sputtering. Films of thickness 1.0 μm were grown on (100) Si wafers both with and without an LPCVD SiNx barrier. The as-deposited films were annealed in vacuum at temperatures ranging from 500°C to 800°C. The microstructure of the annealed films was characterized using transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), and Rutherford back scattering (RBS).

Influence of Substrate Temperature on Tin Oxide Thin Films Deposited by Electron Beam Evaporation Technique

1992 ◽  
Vol 242 ◽  
Author(s):  
S. M. Rozati ◽  
S. Mirzapour ◽  
M. G. Takwale ◽  
B. R. Marathe ◽  
V. G. Bhide
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Electron Beam Evaporation ◽  
Electron Beam Evaporation Technique ◽  
Evaporation Technique ◽  
Influence Of Substrate ◽  
Tin Oxide Films ◽  
Deposited Films

ABSTRACTTransparent conducting tin oxide films were prepared by an electron beam evaporation technique. As-deposited films were amorphous or polycrystalline depending on the substrate temperature and the time of deposition. In order to get transparent and conducting thin films of SnO2, as-deposited films were subjected to further heat-treatment in air at 650°C for 2 hours. Physical properties of as-deposited and annealed films are discussed with reference to substrate temperature and deposition time.

Thickness dependent electrical characterization of electron beam evaporated n-type CdSe thin films

2010 ◽  
Vol 7 (2) ◽  
pp. 495-498
Author(s):  
S. R. Vishwakarma ◽  
Aneet Kumar Verma ◽  
Ravishankar Nath Tripathi ◽  
Rahul. Rahul
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electrical Characterization ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Electron Beam Evaporation Technique ◽  
Evaporation Technique ◽  
Different Thickness ◽  
Deposited Films

The prepared starting materials has composition Cd0.60Se0.40 was used to fabrication of thin films. Cadmium selenide thin films of different thickness (400nm-700nm) deposited by electron beam evaporation technique on well cleaned glass substrate at substrate temperature 300 K. The X-ray diffraction pattern confirmed that the prepared thin films of composition Cd 0.60Se 0.40 has polycrystalline in nature. The resistivity, conductivity, Hall mobility, carrier concentration of the deposited films were calculated of different films thickness..

Growth and Characterization of Heteroepitaxial Nickel Films on Diamond Substrates

1990 ◽  
Vol 202 ◽  
Author(s):  
T. P. Humphreys ◽  
Hyeongtag Jeon ◽  
R. J. Nemanich ◽  
J. B. Posthill ◽  
R. A. Rudder ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam ◽  
Thermal Evaporation ◽  
Three Dimensional ◽  
Electron Beam Evaporation ◽  
Tungsten Filament ◽  
Growth Modes ◽  
Deposited Films ◽  
Deposition Techniques

ABSTRACTIn the present study epitaxial Ni(001) films have been grown on natural C(001) substrates (type la and Ha) and homoepitaxial C(001) films. Two deposition techniques including electron-beam evaporation of Ni in a molecular beam epitaxy (MBE) system and evaporation of Ni from a resistively heated tungsten filament have been employed. As evidenced by scanning electron microscopy (SEM), the Ni films deposited by electron-beam evaporation were found to replicate the very fine, unidirectional scratches present on the as polished C(001) substrates. Indeed, the coverage and uniformity of the deposited films would imply a two-dimensional (2-D) growth mode. In comparison, the thermal evaporation of Ni on C(001) substrates results in a highly textured and faceted surface morphology indicative of three-dimensional (3–D) nucleation and growth. Moreover, Rutherford backscattering/channeling measurements have demonstrated that the Ni(001) films deposited by electron-beam evaporation are of superior crystalline quality. Differences in the observed microstructure and apparent growth modes of the epitaxial Ni(001) films have been attributed to the presence of oxygen incorporation in those layers deposited by thermal evaporation.

Optoelectronic Properties of Cadmium Sulfide Thin Films Deposited by Thermal Evaporation Technique

2012 ◽  
Vol 510-511 ◽  
pp. 177-185 ◽  
Author(s):  
N. Ali ◽  
M.A. Iqbal ◽  
S.T. Hussain ◽  
M. Waris ◽  
S.A. Munair
Keyword(s):  
Thin Films ◽  
Thermal Evaporation ◽  
Uv Spectroscopy ◽  
Cadmium Sulphide ◽  
Vital Role ◽  
Thermal Evaporation Technique ◽  
Evaporation Technique ◽  
Deposited Films ◽  
Cold Probe ◽  
Absorbance Band

The substrate temperature in depositions of thin films plays a vital role in the characteristics of deposited films. We studied few characteristics of cadmium sulphide thin film deposited at different temperature (150°C-300°C) on corning 7059 glass substrate. We measured transmittance, absorbance, band gap and reflectance via UV spectroscopy. It was found that the transmittance for 300nm to 1100nm was greater than 80%. The resistivity and mobility was calculated by Vander Pauw method which were 10-80 cm and 2-60 cm2V-1S-1 respectively. The thermoelectric properties of the film were measured by hot and cold probe method which shows the N-type nature of the film.

Tunable Quantum Confinement Effect on Non-volatile Thin Film Polymer Memory Device

2008 ◽  
Author(s):  
Augustin J. Hong ◽  
Kang L. Wang ◽  
Wei Lek Kwan ◽  
Yang Yang ◽  
Dayanara Parra ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Confinement ◽  
Quantum Confinement Effect ◽  
Memory Device ◽  
Confinement Effect ◽  
Film Polymer ◽  
Polymer Memory

Formation of Luminescent Si Nanocrystals by High-Temperature Annealing of Ion-Beam-Sputtered Si/SiO2 Multilayers

2003 ◽  
Vol 775 ◽  
Author(s):  
Suk-Ho Choi ◽  
Jun Sung Bae ◽  
Kyung Jung Kim ◽  
Dae Won Moon
Keyword(s):  
Quantum Confinement ◽  
Radiative Recombination ◽  
Ion Beam ◽  
Quantum Confinement Effect ◽  
Visible Range ◽  
Ion Beam Sputtering ◽  
Transmission Electron ◽  
Si Nanocrystals ◽  
Beam Sputtering ◽  
Microscopy Images

AbstractSi/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high resolution transmission electron microscopy images clearly demonstrate the existence of Si nanocrystals, which exhibit photoluminescence (PL) in the visible range when TS is ≥ 300°C. This is attributed to well-separation of nanocrystals in the higher-TS samples, which is thought to be a major cause for reducing non-radiative recombination in the interface between Si nanocrystal and surface oxide. The visible PL spectra are enhanced in its intensity and are shifted to higher energy by increasing TS. These PL behaviours are consistent with the quantum confinement effect of Si nanocrystals.

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

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