CHARACTERIZATION AND OPTICAL PROPERTIES OF Au/SiO2 COMPOSITE THIN FILMS

1996 ◽  
Vol 03 (01) ◽  
pp. 1071-1076 ◽  
Author(s):  
I. TANAHASHI ◽  
M. YOSHIDA ◽  
Y. MANABE ◽  
T. TOHDA

Au/SiO 2 composite thin films were prepared by a multitarget sputtering method. The multilayer structure where the Au-particle layer was sandwiched between SiO 2 layer was clearly observed in the as-deposited film by the cross-sectional TEM. The diameter of the Au particles in the film was estimated to be 2–3 nm and it began to increase when the film was heat-treated above 700° C. The diameter was proportional to the cube root of the heat-treatment time, suggesting that the Au particles grew in the supersaturated solid solution. In the optical absorption spectra of the films, the absorption peak due to the surface-plasmon resonance of Au particles was observed at the wavelength of 528–544 nm. With increasing mean diameter of Au particles, the peak intensity became large and the full-width-at-half-maximum of the absorption band was decreased from 130 nm to 80 nm.

1995 ◽  
Vol 10 (2) ◽  
pp. 362-365 ◽  
Author(s):  
I. Tanahashi ◽  
M. Yoshida ◽  
Y. Manabe ◽  
T. Tohda

Small Ag particles were embedded in SiO2 glass thin films by a multi-target sputtering method. The mean diameter of Ag particles in the as-deposited film with 28.0 at. % of Ag was estimated to be 4.4 nm and it was increased to 24.0 nm when the film was heat-treated at 700 °C for 3 h. The diameter was proportional to the cube root of the heat-treatment time, suggesting that the Ag particles grew in the supersaturated solid solution. In the optical absorption spectra of the heat-treated films, the absorption peak due to the surface plasmon resonance of Ag particles was observed about 410 nm. The peak intensity became large and the full width at half maximum of the absorption band was decreased with increasing the diameter of Ag particles.


1988 ◽  
Vol 135 ◽  
Author(s):  
D.J. Cheng ◽  
S. Yeh ◽  
G.F. Chi

AbstractPolycrystalline InSb thin films have been prepared by the two-source electron-beam evaporation method. The InSb films have been grown on both pure Si (100) substrate and on Si (100) substrate which has been thermally oxidized to form a thin amorphous SiOx overlayer. The as-grown thin films have been heat treated under N2 atmosphere which is slightly mixed with air. A thin InOx layer is formed on the top surface of the thin film.After heat treatment, the InSb films grown on the oxidized Si substrate shows a preferred (111) orientation. While the films grown on Si substrate do not show such preferred orientation as evidenced by the X-ray diffraction patterns.The TEM cross sectional morphologies of the InSb film grown on oxidized Si substrate shows an ordered arrangement of the grains. While the film grown on the pure Si substrate shows a random arrangement of the grains. The film grown on the oxidized Si substrate also shows the existence of the twin boundary and an ordered arrangement of the precipitation of the second phase.


2014 ◽  
Vol 809-810 ◽  
pp. 649-653 ◽  
Author(s):  
Yun Guo ◽  
Qing Huang Zhang ◽  
Li Rong Wang ◽  
Wen Zhao Lu ◽  
Lin Jun Wang

A series of tourmaline/ZnO composite thin films were prepared by the facile route of low-temperature wet chemical method. X-ray diffraction (XRD) and Raman Spectroscopy analyses showed the hybrid spectroscopic characters of tourmaline and ZnO. With adding the different amount of tourmaline powder, ZnO tended to exhibit the different peak intensity of X-ray diffraction and Raman vibration. ZnO deposited into bending nanosheets and intersected to upstanding nanostucture on the surface of tourmaline particles in SEM images. The optical adsorption properities obtained by the UV-Vis spectra indicated that the addition of tourmaline had enhanced the maximum absorption strength, and had shifted the absorption wavelength and the absorption range of ZnO crystals.


1988 ◽  
Vol 135 ◽  
Author(s):  
S. Yeh ◽  
D. J. Cheng ◽  
G. F. Chi ◽  
M. T. Chu

AbstractPolycrystalline InSb thin films have been prepared by the two-source thermal co-evaporation method. The InSb films have been grown on both pure Si (100) substrate and on Si (100) substrate which has been thermally oxidized to form a thin amorphous SiOx overlayer. The as-grown films have been heat treated under N2 atmosphere at different temperatures ranged from 520 to 535 C. Both as-grown films have (220) diffraction as the main peak. The heat treated films which have high mobility values show the (111) preferred orientation. For the heat treated film on oxidized Si substrate, the TEM cross sectional morphologies show the existence of the precipitaion of the second phase and the interface diffusion of InSb into the SiOx layer.


1990 ◽  
Vol 202 ◽  
Author(s):  
P. W. Wang ◽  
S. Yeh ◽  
L. Chang

ABSTRACTPolycrystalline InSb thin films have been prepared by two-source thermal evaporation method. The as-deposited randomly oriented thin films develop (111) preferred orientation upon heat treatment of different maximum setting temperatures, T(max)s. Under different T(max)s, the elongate (111) grains rotate gradually the direction of the elongation respect to the thermally oxidized Si(100) substrate.The (111) preferred orientation has been seen from both cross-sectional TEM and X-ray diffraction patterns. The electrical mobility value of the thin film has been measured by the Van der Pauw′s method. A dramatic increase in the electrical mobility from few thousands, for the as-deposited film, to intermediate values of 15,000-30,000 cm2/v-s and the highest value of 36,000 cm2/v-s for thin films subjected to different T(max)s, can be correlated well to the corresponding microstruetures.


2008 ◽  
Vol 8 (3) ◽  
pp. 1279-1283 ◽  
Author(s):  
Junping Meng ◽  
Jinsheng Liang ◽  
Xiuqin Ou ◽  
Yan Ding ◽  
Guangchuan Liang

Titania composite thin films (T/TiO2) containing tourmaline particles were prepared by a sol–gel method, using alkoxide solutions as precursor. The tourmaline particles and thin films were characterized by X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy, and so on. The effects of tourmaline on the photocatalytic activity of TiO2 were measured with methyl orange as an objective photodegradation substance. The results showed that the photocatalytic degradation of methyl orange conformed to the first-order kinetic equation and the composite thin films had better photocatalytic activity due to the cooperation of polarity and the far infrared emission of tourmaline. The T/TiO2 thin films including 0.5 wt% tourmaline exhibited better photocatalytic activity when heat-treated at 250 °C for 3 h, than pure TiO2 thin films under the ultraviolet irradiation.


Author(s):  
A. K. Rai ◽  
P. P. Pronko

Several techniques have been reported in the past to prepare cross(x)-sectional TEM specimen. These methods are applicable when the sample surface is uniform. Examples of samples having uniform surfaces are ion implanted samples, thin films deposited on substrates and epilayers grown on substrates. Once device structures are fabricated on the surfaces of appropriate materials these surfaces will no longer remain uniform. For samples with uniform surfaces it does not matter which part of the surface region remains in the thin sections of the x-sectional TEM specimen since it is similar everywhere. However, in order to study a specific region of a device employing x-sectional TEM, one has to make sure that the desired region is thinned. In the present work a simple way to obtain thin sections of desired device region is described.


Author(s):  
G. Lucadamo ◽  
K. Barmak ◽  
C. Michaelsen

The subject of reactive phase formation in multilayer thin films of varying periodicity has stimulated much research over the past few years. Recent studies have sought to understand the reactions that occur during the annealing of Ni/Al multilayers. Dark field imaging from transmission electron microscopy (TEM) studies in conjunction with in situ x-ray diffraction measurements, and calorimetry experiments (isothermal and constant heating rate), have yielded new insights into the sequence of phases that occur during annealing and the evolution of their microstructure.In this paper we report on reactive phase formation in sputter-deposited lNi:3Al multilayer thin films with a periodicity A (the combined thickness of an aluminum and nickel layer) from 2.5 to 320 nm. A cross-sectional TEM micrograph of an as-deposited film with a periodicity of 10 nm is shown in figure 1. This image shows diffraction contrast from the Ni grains and occasionally from the Al grains in their respective layers.


Author(s):  
Pamela F. Lloyd ◽  
Scott D. Walck

Pulsed laser deposition (PLD) is a novel technique for the deposition of tribological thin films. MoS2 is the archetypical solid lubricant material for aerospace applications. It provides a low coefficient of friction from cryogenic temperatures to about 350°C and can be used in ultra high vacuum environments. The TEM is ideally suited for studying the microstructural and tribo-chemical changes that occur during wear. The normal cross sectional TEM sample preparation method does not work well because the material’s lubricity causes the sandwich to separate. Walck et al. deposited MoS2 through a mesh mask which gave suitable results for as-deposited films, but the discontinuous nature of the film is unsuitable for wear-testing. To investigate wear-tested, room temperature (RT) PLD MoS2 films, the sample preparation technique of Heuer and Howitt was adapted.Two 300 run thick films were deposited on single crystal NaCl substrates. One was wear-tested on a ball-on-disk tribometer using a 30 gm load at 150 rpm for one minute, and subsequently coated with a heavy layer of evaporated gold.


Sign in / Sign up

Export Citation Format

Share Document