High-Quality p-Type ZnO Films Grown by Co-Doping of N and Te on Zn-Face ZnO Substrates

AbstractNitrogen and tellurium co-doped ZnO (ZnO:[N+Te]) films have been grown on (0001) ZnO substrate by plasma-assisted molecular beam epitaxy. The electron concentration of tellurium doped ZnO (ZnO:Te) gradually increases, compared that of undoped ZnO (u-ZnO). On the other hand, conductivity of ZnO:[N+Te] changes from n-type to p-type characteristic with a hole concentration of 4×1016 cm-3. However, nitrogen doped ZnO film (ZnO:N) still remain as n-type conductivity with a electron concentration of 2.5×1017 cm-3. Secondary ion mass spectroscopy reveals that nitrogen concentration ([N]) of ZnO:[N+Te] film (2×1021 cm-3) is relatively higher than that of ZnO:N film (3×1020 cm-3). 10 K photoluminescence spectra shows that considerable improvement of emission properties of ZnO:[N+Te] with an emergence of narrow acceptor bound exciton (A°X, 3.359 eV) and donor-acceptor pair (DAP, 3.217 eV), compared with those of u-ZnO. Consequently, high quality p-type ZnO with high N concentration is realized by using Te and N co-doping technique due to reduction of Madelung energy.

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Highly oriented growth of n-type ZnO films on p-type single crystalline diamond films and fabrication of high-quality transparent ZnO/diamond heterojunction

Carbon ◽

10.1016/j.carbon.2003.10.038 ◽

2004 ◽

Vol 42 (2) ◽

pp. 317-321 ◽

Cited By ~ 29

Author(s):

C.X. Wang ◽

G.W. Yang ◽

C.X. Gao ◽

H.W. Liu ◽

Y.H. Han ◽

...

Keyword(s):

Diamond Films ◽

Zno Films ◽

Oriented Growth ◽

High Quality ◽

Single Crystalline ◽

P Type

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Co-doping Deposition of p-type ZnO Thin Films using KrF Excimer Laser Ablation

MRS Proceedings ◽

10.1557/proc-747-v2.3 ◽

2002 ◽

Vol 747 ◽

Cited By ~ 1

Author(s):

Kenji Ebihara ◽

Tamiko Ohshima ◽

Tomoaki Ikegami ◽

Jes Asumussen ◽

Raj K. Thareja

Keyword(s):

Thin Films ◽

Zno Thin Films ◽

Zno Films ◽

Axis Orientation ◽

Excimer Laser Ablation ◽

Co Doping ◽

Doped Zno ◽

Krf Excimer Laser ◽

P Type ◽

Nitrogenous Gases

ABSTRACTWe report on the attempt to fabricate p-type ZnO thin films using various doping techniques based on the pulsed laser deposition (PLD). As an accepter, we have doped the N atom by using high purity nitric monoxide (NO) ambient gas. NO is dissociated into N and O at an energy of 6.5 eV which is lower than at N2 (9.76 eV). Moreover the dissociation reaction of NO is simpler than other nitrogenous gases such as N2O, NO2, and NH3. One of our doping techniques is co-doping of Ga and N atom by ablating ZnO:Ga target in NO gas, and another is the ablation of the metal Zn target in NO gas. Both of Ga and N co-doped ZnO films and N doped ZnO films have c-axis orientation as well as undoped ZnO films. The surfaces of these doped films are rough while the undoped ZnO thin film is very smooth and have hexagonally shaped grains. We found it possible to fabricate the p-type ZnO film by ablating the metal Zn target in NO gas.

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Preparation of p-type ZnO films with (N,Ga) co-doping by MOVPE

Materials Chemistry and Physics ◽

10.1016/j.matchemphys.2007.07.012 ◽

2008 ◽

Vol 107 (2-3) ◽

pp. 244-247 ◽

Cited By ~ 14

Author(s):

H. Wang ◽

H.P. Ho ◽

K.C. Lo ◽

K.W. Cheah

Keyword(s):

Zno Films ◽

Co Doping ◽

P Type

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Optical and Electrical Properties of P-Type N-Doped ZnO Film

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.609-610.113 ◽

2014 ◽

Vol 609-610 ◽

pp. 113-117

Author(s):

Ya Juan Sun ◽

Wan Xing Wang

Keyword(s):

Electrical Properties ◽

Hall Effect ◽

Band Gap ◽

Hall Effect Measurement ◽

Effect Measurement ◽

Zno Films ◽

Optical And Electrical Properties ◽

High Quality ◽

Doped Zno ◽

P Type

Since ZnO is a wide band gap (3.37 eV) semiconductor with a large exitonic binding energy (60 meV), it has been considered as a candidate for various applications, such as ultraviolet (UV) light emitting diodes and laser diodes. For the applications of ZnO-based optoelectronic devices, it is necessary to produce n and p type ZnO films with the high quality. Since ZnO is naturally n-type semiconductor material due to intrinsic defects, such as oxygen vacancies, zinc interstitials, etc., it is easy to produce n-type ZnO with high quality. However, it is difficult to produce low-resistive and stable p-type ZnO due to its asymmetric doping limitations and the self-compensation effects of the intrinsic defects. According to the theoretical studies, p-type ZnO can be realized using group-V dopants substituting for O, such as N, P and As. Among them, N has been suggested to be an effective acceptor dopant candidate to achieve p-type ZnO, because that nitrogen has a much smaller ionic size than P and As and the energy level of substitutional NOis lower than that of substitutional POand AsO.Transparent p-type ZnO: N thin films have been fabricated using the pulsed laser deposition method at deposition temperatures 800 °C under the O2and N2mixing pressure 6Pa. N-doped ZnO films were deposited on sapphire substrate using metallic zinc (99.999%) as target. The structural, optical and electrical properties of the films were examined by XRD, UV-visit spectra and Hall effect measurement. We found that thin film contain the hexagonal ZnO structure. The Hall effect measurement revealed that the carrier concentration is 5.84×10181/ cm3, and Hall mobility is 0.26 cm2/Vs, electrical resistivity is 4.12ohm-cm. Film thickness is 180nm. Besides, Visible light transmittance is more than 80%, and calculative band-gap is 3.1 eV, which is lower than ZnO.

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Enhancement of Resistance Switching in Electrodeposited Co-ZnO Films

ISRN Nanotechnology ◽

10.5402/2012/705803 ◽

2012 ◽

Vol 2012 ◽

pp. 1-4 ◽

Cited By ~ 5

Author(s):

Dewei Chu ◽

Adnan Younis ◽

Sean Li

Keyword(s):

Surface Morphology ◽

Lattice Structure ◽

Resistance Switching ◽

Zno Films ◽

Dopant Distribution ◽

High Quality ◽

Co Doping ◽

Doped Zno ◽

Deposited Films ◽

Co Doped

High quality Co-doped ZnO films were prepared with electrodeposition. The correlation among the surface morphology, lattice structure, Co-dopant distribution, and resistance switching properties of the as-deposited films were investigated. It is found that resistance switching behaviour could be manipulated by controlling the composition of Co in the ZnO films. The significant enhancement of resistance switching was achieved with 5 at% Co doping in the films, and the possible switching mechanism was also discussed.

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High quality p-type ZnO films grown by low pressure plasma-assisted MOCVD with N2O rf plasma doping source

Journal of Materials Processing Technology ◽

10.1016/j.jmatprotec.2008.03.007 ◽

2008 ◽

Vol 204 (1-3) ◽

pp. 481-485 ◽

Cited By ~ 7

Author(s):

Tianpeng Yang ◽

Jiming Bian ◽

Hongwei Liang ◽

Jingchang Sun ◽

Xinsheng Wang ◽

...

Keyword(s):

Low Pressure ◽

Rf Plasma ◽

Zno Films ◽

High Quality ◽

Pressure Plasma ◽

Plasma Doping ◽

Low Pressure Plasma ◽

P Type

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Fabrication of high hole-carrier density p-type ZnO thin films by N–Al co-doping

Applied Surface Science ◽

10.1016/j.apsusc.2006.08.010 ◽

2007 ◽

Vol 253 (8) ◽

pp. 3825-3827 ◽

Cited By ~ 8

Author(s):

Zhang Xiaodan ◽

Fan Hongbing ◽

Zhao Ying ◽

Sun Jian ◽

Wei Changchun ◽

...

Keyword(s):

Thin Films ◽

Carrier Density ◽

Zno Thin Films ◽

Co Doping ◽

P Type

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Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

MRS Proceedings ◽

10.1557/opl.2013.4 ◽

2013 ◽

Vol 1494 ◽

pp. 77-82

Author(s):

T. N. Oder ◽

A. Smith ◽

M. Freeman ◽

M. McMaster ◽

B. Cai ◽

...

Keyword(s):

Rf Magnetron Sputtering ◽

Zno Films ◽

X Ray Diffraction ◽

X Ray ◽

Sapphire Substrates ◽

Hall Effect Measurements ◽

Sputter Deposited ◽

P Type ◽

Post Deposition ◽

Co Doped

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

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