Stress and Strain of GaAs on Si Grown by MOCVD Using Strained Superlattice Intermediate Layers and a Two-Step Growth Method

ABSTRACTThe stress and strain of GaAs on Si grown by using strained superlattice intermediate layers and a two-step growth method are characterized by the photoluminescence, X-ray diffraction and the curvature radius. The strain of GaAs grown using strained superlattice intermediate layers is smaller than that grown by the two-step growth method.

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Influence of Growth Temperature of the Nucleation Layer on the Growth of InP on Si (001)

Coatings ◽

10.3390/coatings9120823 ◽

2019 ◽

Vol 9 (12) ◽

pp. 823

Author(s):

Shizheng Yang ◽

Hongliang Lv ◽

Likun Ai ◽

Fangkun Tian ◽

Silu Yan ◽

...

Keyword(s):

Growth Temperature ◽

Wafer Level ◽

X Ray Diffraction ◽

Nucleation Layer ◽

Force Microscopy ◽

Gas Source ◽

Atomic Force ◽

Growth Method ◽

Step Growth ◽

Microscopy Images

InP layers grown on Si (001) were achieved by the two-step growth method using gas source molecular beam epitaxy. The effects of growth temperature of nucleation layer on InP/Si epitaxial growth were investigated systematically. Cross-section morphology, surface morphology and crystal quality were characterized by scanning electron microscope images, atomic force microscopy images, high-resolution X-ray diffraction (XRD), rocking curves and reciprocal space maps. The InP/Si interface and surface became smoother and the XRD peak intensity was stronger with the nucleation layer grown at 350 °C. The Results show that the growth temperature of InP nucleation layer can significantly affect the growth process of InP film, and the optimal temperature of InP nucleation layer is required to realize a high-quality wafer-level InP layers on Si (001).

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A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE

MRS Proceedings ◽

10.1557/proc-242-427 ◽

1992 ◽

Vol 242 ◽

Cited By ~ 64

Author(s):

T. D. Moustakas ◽

R. J. Molnar ◽

T. Lei ◽

G. Menon ◽

C. R. Eddy

Keyword(s):

Surface Morphology ◽

Low Temperatures ◽

Smooth Surface ◽

Growth Process ◽

X Ray Diffraction ◽

Epitaxial Relationship ◽

X Ray ◽

Sapphire Substrates ◽

Growth Method ◽

Step Growth

ABSTRACTGaN films were grown on c-plane (0001), a-plane (1120) and r-plane (1102) sapphire substrates by the ECR-assisted MBE method. The films were grown using a two-step growth process, in which a GaN buffer is grown first at relatively low temperatures and the rest of the film is grown at higher temperatures. RHEED studies indicate that this growth method promotes lateral growth and leads to films with smooth surface morphology. The epitaxial relationship to the substrate, the crystalline quality and the surface morphology were investigated by RHEED, X-ray diffraction and SEM studies.

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Pitch-Independent Realization of 30-nm-Diameter InGaAs Nanowire Arrays by Two-Step Growth Method in Selective-Area Metalorganic Vapor-Phase Epitaxy

Applied Physics Express ◽

10.7567/apex.6.025502 ◽

2013 ◽

Vol 6 (2) ◽

pp. 025502 ◽

Cited By ~ 8

Author(s):

Yoshinori Kohashi ◽

Shinya Sakita ◽

Shinjiroh Hara ◽

Junichi Motohisa

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Nanowire Arrays ◽

Independent Realization ◽

Selective Area ◽

Growth Method ◽

Step Growth

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ETCH PITS STUDY OF MOCVD-GROWN GaAs ON Si WITH III-V COMPOUND INTERMEDIATE LAYERS

Defect Control in Semiconductors ◽

10.1016/b978-0-444-88429-9.50058-6 ◽

1990 ◽

pp. 1307-1311 ◽

Cited By ~ 1

Author(s):

Tetsuo SOGA ◽

Hironobu NISHIKAWA ◽

Shinji NOZAKI ◽

Nobuhiko NOTO ◽

Takashi JIMBO ◽

...

Keyword(s):

Etch Pits ◽

Gaas On Si ◽

Intermediate Layers

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Phase Control of Ga2O3 Thin Films Grown by Metal-Organic Chemical Vapor Deposition

Materials Science Forum ◽

10.4028/www.scientific.net/msf.954.72 ◽

2019 ◽

Vol 954 ◽

pp. 72-76

Author(s):

Ze Qi Li ◽

Zi Min Chen ◽

Wei Qu Chen ◽

Gang Wang

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Flow Rates ◽

Growth Method ◽

Metal Organic ◽

Step Growth ◽

Organic Chemical Vapor Deposition

In this paper, Ga2O3 thin films were grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). There was phase transition for samples grown with different flow rates of triethyl-gallium (TEGa) and deionized water (H2O). It is found that ε-Ga2O3 is difficult to coalesce and the phase mixture by βGa2O3 takes place if the flow rates of TEGa and H2O are too high. However, by using multiple-step growth method, the film became fully coalesced. High-quality ε-Ga2O3 thin film with atomically flat surface and multilayer morphology was obtained.

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Raman Mapping and Finite Element Analysis of Epitaxial Lateral Overgrown GaN on Sapphire Substrates

MRS Proceedings ◽

10.1557/proc-743-l3.12 ◽

2002 ◽

Vol 743 ◽

Author(s):

M. Benyoucef ◽

M. Kuball ◽

B. Beaumont ◽

V. Bousquet ◽

P. Gibart

Keyword(s):

Finite Element ◽

Growth Stress ◽

Fe Analysis ◽

Stress Fields ◽

Raman Mapping ◽

Element Analysis ◽

Stress Variation ◽

Sapphire Substrates ◽

Growth Method ◽

Step Growth

ABSTRACTUsing micro-Raman scattering and finite element (FE) analysis, stress fields in epitaxial lateral overgrown (ELO) GaN fabricated by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates using a two-step growth method were investigated. Nearly full stress relaxation at the top ELO GaN surface can be achieved by increasing the thickness of ELO GaN to about 50 μm. Reductions in stress variation between window and overgrown regions can be achieved by using a double ELO GaN growth at a much smaller ELO thickness. Increased compressive stress at the coalescence boundary of two adjacent wings of ELO GaN was related to the presence of voids in this area. In the double ELO growth, stress near the top surface was mainly attributed to the presence of voids on top of the upper dielectric mask.

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The Effect of Rapid Thermal Treatment on the Structural and Optoelectronic Properties of Epitaxial Gaas on Si Grown With or Without Ge Intermediate Layers

MRS Proceedings ◽

10.1557/proc-92-347 ◽

1987 ◽

Vol 92 ◽

Author(s):

El-Hang Lee ◽

M.Abdul Awal ◽

E. Y. Chan ◽

R. L. Opila ◽

D. C. Jacobson ◽

...

Keyword(s):

Electrical Properties ◽

Thermal Treatment ◽

Intermediate Layer ◽

Optoelectronic Properties ◽

Gaas On Si ◽

Intermediate Layers ◽

Structural And Electrical Properties ◽

Before And After ◽

Structural And Optoelectronic Properties ◽

Raman Characterization

ABSTRACTCharacteristics of MOCVD GaAs grown on Si are compared before and after a rapid thermal treatment. The GaAs-on-Si samples were prepared both with and without a Ge intermediate layer, which is used to accomodate mismatches of lattice, thermal and chemical origin between GaAs and Si. Structural, interfacial, chemical, and electrical changes have been examined. RBS and Raman characterization showed improvement of GaAs crystallinity after RTA. In most cases, the interfaces were found to become sharper after RTA, but chemical interdiffusion was observed to cause some effect on the structural and electrical properties. For gold-contacted GaAs, RTA seems to degrade the electrical and optoelectronic properties via gold interdiffusion into GaAs. Comparative studies of the GaAs/Si and GaAs/Ge/Si samples suggests that the two respond somewhat differently to RTA.

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