Experimental Results of Space Layer Thickness for Blue-Wavelength Dual-Layered Disc

ABSTRACTNanocomposite Ti/Al multilayered thin films have been deposited by magnetron sputtering. These multilayers exhibit interesting structural transitions on reducing the layer thickness of both Ti and Al. Ti transforms from its bulk stable hep structure to fee and Al transforms from fee to hep. The effect of ratio of Ti layer thickness to Al layer thickness on the structural transitions has been investigated for a constant bilayer periodicity of 10 nm by considering three different multilayers: 7.5 nm Ti / 2.5 nm Al, 5 nm Ti / 5 nm Al and 2.5 nm Ti / 7.5 nm Al. The experimental results have been qualitatively explained on the basis of a thermodynamic model. Preliminary experimental results of interfacial reactions in Ti/Al bilayers resulting in the formation of Ti-aluminides are also presented in the paper.

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Process Parameter Optimization in Fused Deposition Modeling (FDM) Using Response Surface Methodology (RSM)

10.21203/rs.3.rs-122421/v1 ◽

2020 ◽

Author(s):

Muhammad Salman Mustafa ◽

Muhammad Qasim Zafar ◽

Muhammad Arslan Muneer ◽

Muhammad Arif ◽

Farrukh Arsalan Siddiqui ◽

...

Keyword(s):

Mechanical Properties ◽

Response Surface Methodology ◽

Impact Strength ◽

Response Surface ◽

Layer Thickness ◽

Fused Deposition Modeling ◽

Experimental Results ◽

Fused Deposition ◽

Deposition Modeling ◽

Printing Parameters

Abstract Fused Deposition Modeling (FDM) is a widely adopted additive manufacturing process to produce complex 3D structures and it is typically used in the fabrication of biodegradable materials e.g. PLA/PHA for biomedical applications. However, FDM as a fabrication process for such material needs to be optimized to enhance mechanical properties. In this study, dogbone and notched samples are printed with the FDM process to determine optimum values of printing parameters for superior mechanical properties. The effect of layer thickness, infill density, and print bed temperature on mechanical properties is investigated by applying response surface methodology (RSM). Optimum printing parameters are identified for tensile and impact strength and an empirical relation has been formulated with response surface methodology (RSM). Furthermore, the analysis of variance (ANOVA) was performed on the experimental results to determine the influence of the process parameters and their interactions. ANOVA results demonstrate that 44.7% infill density, 0.44 mm layer thickness, and 20C° printing temperatures are the optimum values of printing parameters owing to improved tensile and impact strength respectively. The experimental results were found in strong agreement with the predicted theoretical results.

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Experimental Study of Wave Loading by Internal Solitary Waves on a Submerged Slender Body

Volume 6B: Ocean Engineering ◽

10.1115/omae2020-18474 ◽

2020 ◽

Author(s):

Meng Ji ◽

Ke Chen ◽

Yunxiang You ◽

Ruirui Zhang

Keyword(s):

Layer Thickness ◽

Solitary Waves ◽

Wave Amplitude ◽

Prediction Method ◽

Thickness Ratio ◽

Experimental Results ◽

Slender Body ◽

Internal Solitary Waves ◽

Wave Loads ◽

Layer Thickness Ratio

Abstract Although ocean structures are complex, they all can be disassembled into a number of simple-shaped parts. One common shape is the slender body mentioned in this paper, and we focus on studying the mechanism of this shape. Experiments were carried out to study features of wave loads exerted by internal solitary waves (ISWs) on a submerged slender body. ISWs were generated by a piston-type wave maker in a large-type density stratified two-layer fluid wave flume. Using a three-component force transducer, the force variation of three degree of freedom (DOF) on the model was recorded. A satisfactory prediction method is established for ISWs on a submerged slender body based on internal solitary wave theory, Morison equation and pressure integral. Calculations based on this new prediction method are in good agreement with the experimental results. The experimental results and calculations show that, different incident angles, wave amplitude and layer thickness ratio have great effects on the wave loads, especially transverse incident waves bring much more severely influence. Besides the forces increase linearly with the wave amplitude becoming larger, and the maximums of the horizontal forces increase with the layer thickness ratio increasing.

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Interfacial Contributions to Magnetostriction of Ferromagnetic Layers for Magnetoresistive Sensors

MRS Proceedings ◽

10.1557/proc-721-e6.9 ◽

2002 ◽

Vol 721 ◽

Author(s):

E.W. Singleton ◽

K.J. Duxstad

Keyword(s):

Layer Thickness ◽

Spin Valve ◽

Magnetic Layer ◽

Experimental Results ◽

Ferromagnetic Layers ◽

Magnetoresistive Sensors

AbstractWe have experimentally measured magnetostriction of thin CoFe layers when deposited with various seed and capping layers. Seed and capping layers were chosen to be materials that may be used in spin-valve (SV) type structures. Materials deposited adjacent to the magnetic layer include Cu, Ta and TaN. The experimental results are interpreted using a model that allows separation of bulk and interface contributions to the measured magnetostriction [1].Results show a clear interfacial contribution that is dependent upon the material at the interface of the magnetic layer. The results demonstrate that surface contributions to the magnetostriction dominate as layer thickness decreases.

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Capability plots of dynamic positioning for the semi-submersible platform in internal solitary waves

Modern Physics Letters B ◽

10.1142/s0217984921501918 ◽

2021 ◽

pp. 2150191

Author(s):

Jing-Jing Zhang ◽

Yi Liu ◽

Ke Chen ◽

Yun-Xiang You

Keyword(s):

Quadratic Programming ◽

Layer Thickness ◽

Solitary Waves ◽

Experimental Results ◽

Internal Solitary Waves ◽

Dynamic Positioning ◽

Layer Depth ◽

Main Components ◽

Wind Currents ◽

Maximum Thrust

Based on the experimentally detected forces induced by internal solitary waves (ISWs), an analysis on capability of dynamic positioning (DP) for the semi-submersible platform model under the influence of different ISW-amplitudes with three kinds of ocean stratified conditions is carried out. The environmental forces acting on the semi-submersible platform arise due to the following two main components: the measurements of ISW-forces and calculations of the wind, currents and waves. Combined with quadratic programming (QP) methods, extreme safe amplitudes under different upper layer depths and the DP strategy are proposed. It is obvious from the experimental results that both the maximum and minimum horizontal ISW-forces increase linearly with the wave amplitudes under different layer thickness ratios, and the upper layer depth has a significant effect on the ISW-forces. Reference to the obtained results from the DP capability simulation reveals that the maximum thrust, with overloading, appears at heading angles of 90[Formula: see text] and 270[Formula: see text] under different upper layer depths, whilst the minimum thrust is under angles of 0[Formula: see text] and 180[Formula: see text].

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SiC Warm-Wall Planetary VPE Growth on Multiple 100-mm Diameter Wafers

Materials Science Forum ◽

10.4028/www.scientific.net/msf.527-529.159 ◽

2006 ◽

Vol 527-529 ◽

pp. 159-162 ◽

Cited By ~ 4

Author(s):

Albert A. Burk ◽

Michael J. O'Loughlin ◽

Michael J. Paisley ◽

Adrian R. Powell ◽

M.F. Brady ◽

...

Keyword(s):

Layer Thickness ◽

Epitaxial Layer ◽

High Throughput ◽

Layer Growth ◽

Experimental Results ◽

Epitaxial Layers ◽

Large Area ◽

Low Background ◽

Total Range ◽

Background Doping

Experimental results are presented for SiC epitaxial layer growth employing a large-area, up to 8x100-mm, warm-wall planetary SiC-VPE reactor. This high-throughput reactor has been optimized for the growth of uniform 0.01 to 80-micron thick, specular, device-quality SiC epitaxial layers with low background doping concentrations of <1x1014 cm-3 and intentional p- and n-type doping from ~1x1015 cm-3 to >1x1019 cm-3. Intrawafer layer thickness and n-type doping uniformity (σ/mean) of ~2% and ~8% have been achieved to date in the 8x100-mm configuration. The total range of the average intrawafer thickness and doping within a run are approximately ±1% and ±6% respectively.

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Damping Performance of Polychloroprene Rubber for Unconstrained Damping Applications

Advances in Science and Technology ◽

10.4028/www.scientific.net/ast.106.131 ◽

2021 ◽

Vol 106 ◽

pp. 131-136

Author(s):

Prasanth Kumar Mallipudi ◽

Padala Jyothi ◽

N. Ramanaiah ◽

V.V.S. Bhaskara Raju

Keyword(s):

Vibration Control ◽

Layer Thickness ◽

Dynamic Characteristics ◽

Loss Factor ◽

Structural Response ◽

Experimental Results ◽

Viscoelastic Layer ◽

Damping Properties ◽

Structural Damping ◽

Static And Dynamic Characteristics

Damping properties are crucial in determining the dynamic structural response. In this paper, the experimental results for Neoprene rubber of 40, 50 and 60 shore A hardness are reported in view of improving structural damping to control noise and vibrations. Additionally, the system loss factors of the unconstrained layer damped structures of same material were predicted by Ross-Kerwin-Ungar equation to validate the obtained experimental results. The results showed that Neoprene rubber (also known as Polychloroprene) of 60 shore A showed better static and dynamic characteristics than those of the 40 and 50 shore A hardness. The system loss factor results reached the saturation when the applied viscoelastic layer thickness was increased from 40 mm to 50 mm in unconstrained damping. As such, the proposed method can help to build a database of the properties of various materials which are applicable in the design of noise and vibration control.

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Determination of the conductivity and thickness of conductive layers on conductive base materials

Advances in Mechanical Engineering ◽

10.1177/1687814019854234 ◽

2019 ◽

Vol 11 (7) ◽

pp. 168781401985423

Author(s):

John Burkhardt

Keyword(s):

Simultaneous Determination ◽

Layer Thickness ◽

Eddy Current ◽

Base Material ◽

Experimental Results ◽

Conductive Layer ◽

Conductivity Measurements ◽

Apparent Conductivity ◽

Base Materials

An eddy current technique for the simultaneous determination of the layer thickness and conductivity of a uniform conductive layer on a known conductive base material is presented. Layer thickness and conductivity are determined by fitting apparent conductivity measurements taken on the surface of the part at a discrete set of frequencies to a calibration volume. The calibration volume is constructed from apparent conductivity measurements taken on a set of known layer materials, of various known thicknesses, as a function of frequency. Experimental results that support the technique are presented.

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EXCHANGE BIAS IN FERROMAGNETIC/ANTIFERROMAGNETIC BILAYERS

Modern Physics Letters B ◽

10.1142/s0217984901002890 ◽

2001 ◽

Vol 15 (24) ◽

pp. 1087-1093

Author(s):

JING-GUO HU ◽

GUO-JUN JIN ◽

YU-QIANG MA

Keyword(s):

Layer Thickness ◽

Theoretical Investigation ◽

Exchange Bias ◽

Exchange Coupling ◽

Thickness Dependence ◽

Experimental Results ◽

Basic Formula ◽

Direct Exchange ◽

First Time

We present a theoretical investigation on the thickness dependence of exchange bias in ferromagnetic (FM)/antiferromagnetic (AFM) bilayer systems, in which the exchange coupling at the interface between the FM layer and the AFM layer includes both bilinear (direct exchange) and biquadratic (spin-flop) terms. Based on the above model, the basic formula is derived for the first time. From the formula, a lot of interesting facts can be extracted, and a number of recent experimental results can be illustrated. We find that the exchange bias linearly depends on the reciprocal of FM layer thickness. However, another factor is the switching thickness of the AFM layer to display exchange bias, which approaches saturation with a relatively thick AFM layer. In general, the biquadratic term reduces exchange bias. When the biquadratic coupling is properly selected, the discrepancies in the previous theories and experiments can be efficiently eliminated.

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GaN power IC normally-on and normally-off transistors technology and simulation

Journal of Physics Conference Series ◽

10.1088/1742-6596/2086/1/012058 ◽

2021 ◽

Vol 2086 (1) ◽

pp. 012058

Author(s):

V I Egorkin ◽

V A Bespalov ◽

O B Kukhtyaeva ◽

V E Zemlyakov ◽

V V Kapaev ◽

...

Keyword(s):

Layer Thickness ◽

Drain Current ◽

Experimental Results ◽

Simulation Data ◽

Current Channel ◽

Channel Density ◽

Technical Requirements ◽

Device Reliability ◽

Cap Layer ◽

Gan On Si

Abstract GaN technology has been waiting to be widely adopted because of its specific technical requirements. Integration of transistor and driver in a single die will enable to overcome problems with gate driving, high cost of circuit and low device reliability. This paper demonstrates technology of GaN-on-Si normally-on and normally-off transistor with different p-GaN cap-layer thickness as well as simulation of these devices. The simulation data confirm experimental results. P-GaN cap-layer thickness affects the current channel density: the more p-GaN thickness, the less channel density. The fabricated transistors have a maximum drain current in open state of about 800 mA/mm.

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