Time Dependence of Phosphorus Diffusion and Dose Loss during Postimplantation Annealing at Low Temperatures

2002 ◽  
Vol 41 (Part 1, No. 3A) ◽  
pp. 1220-1223 ◽  
Author(s):  
Ruey-Dar Chang ◽  
Philip S. Choi ◽  
Dim-Lee Kwong ◽  
Mark Gardner ◽  
Paul K. Chu
Keyword(s):  
Time Dependence ◽  
Low Temperatures ◽  
Phosphorus Diffusion ◽  
Postimplantation Annealing

SELF-TRAPPED EXCITONS IN ORTHORHOMBIC SnBr2

2001 ◽  
Vol 15 (28n30) ◽  
pp. 4009-4012 ◽  
Author(s):  
Y. YAMASAKI ◽  
N. OHNO
Keyword(s):  
Time Dependence ◽  
Low Temperatures ◽  
Luminescence Band ◽  
Radiative Decay ◽  
Time Resolved ◽  
Tunneling Recombination ◽  
Exciton Region ◽  
Time Resolved Photoluminescence ◽  
Stokes Shifts ◽  
2.5 Ev Luminescence

Luminescence properties of SnBr 2 have been studied to reveal the photo-excited exciton relaxation process. Two types of luminescence with large Stokes shifts are found at low temperatures; the 2.2-eV luminescence band produced under the photo-excitation in the first exciton region, and the 2.5-eV luminescence band stimulated by photons with energies above the bandgap. The time-resolved photoluminescence measurements have revealed that the 2.2-eV luminescence comprises fast (1.2 μs) and slow (6.4 μs) exponential decay components, whereas the 2.5-eV luminescence shows the time dependence of I(t)∞ t-0.9. These results suggest that the former band is attributed to the radiative decay of self-trapped excitons, and the latter band would originate from tunneling recombination of holes with the STEL as in the case of lead halides.

scholarly journals Effect of Oxygen in Low Temperature Boron and Phosphorus Diffusion Gettering of Iron in Czochralski-Grown Silicon

2009 ◽  
Vol 156-158 ◽  
pp. 395-400 ◽  
Author(s):  
Ville Vähänissi ◽  
Antti Haarahiltunen ◽  
H. Talvitie ◽  
M.I. Asghar ◽  
Marko Yli-Koski ◽  
...  
Keyword(s):  
Low Temperature ◽  
Sheet Resistance ◽  
Low Temperatures ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Diffusion Length ◽  
Thermal Budget ◽  
Phosphorus Diffusion ◽  
Oxygen Precipitation ◽  
Effect Of Oxygen

Low temperature boron and phosphorous diffusion gettering (BDG and PDG) of iron in Czochralski-grown silicon were experimentally studied. Differences and similarities between the gettering techniques were clarified by using intentionally iron contaminated wafers emphasizing especially the effect of oxygen. Experiments showed that the surprisingly high gettering effects of BDG could be explained by B-Si precipitates. Oxygen precipitation was seen to decrease minority carrier diffusion length after long gettering at low temperatures in both BDG and PDG. In the case of BDG oxygen precipitation affected more as a higher thermal budget was needed to obtain similar sheet resistance to that of PDG. According to experiments the efficiency of BDG can not be concluded from the sheet resistance, whereas the efficiency of PDG can. This has practical influences in a process control environment.

A New Model of Tail Diffusion of Phosphorus and Boron in Silicon

1985 ◽  
Vol 52 ◽  
Author(s):  
Frederick F. Morehead ◽  
R. F. Lever
Keyword(s):  
Concentration Profile ◽  
Process Simulation ◽  
Low Temperatures ◽  
High Surface ◽  
Surface Concentration ◽  
Transient Effects ◽  
Phosphorus Diffusion ◽  
High Surface Concentration ◽  
Conventional Models ◽  
Normal Processing

ABSTRACTIt is well known that high surface concentration phosphorus diffusion leads to deeply penetrating “tails” in its concentration profile. At 700 °C the tail diffusivity exceeds that of low concentration phosphorus by a factor of a thousand. Less spectacular, but very significant tailing also affects tioron, making the conventional models contained in commonly available process simulation programs quite inaccurate for boron diffusions with high surface concentrations. We show that the observed tailing can be accounted for by a model whose central assumption is the local equality of dopant and oppositely directed defect fluxes. As predicted by the model, the effect is greatest for normal processing at low temperatures for high surface concentrations. It is minimal for the high temperatures of rapid thermal annealing and unrelated to transient effects.

scholarly journals Comparison of Rheological Properties of Hopped Wort and Malt Wort

2015 ◽  
Vol 63 (1) ◽  
pp. 131-136
Author(s):  
Petr Trávníček ◽  
Josef Los ◽  
Petr Junga
Keyword(s):  
Activation Energy ◽  
Mathematical Model ◽  
Time Dependence ◽  
Hysteresis Loop ◽  
Rheological Properties ◽  
Newtonian Fluid ◽  
Low Temperatures ◽  
Model Tests ◽  
Temperature Range ◽  
Thixotropic Behaviour

The aim of this work is determination rheological properties of hopped wort and malt wort and their comparison. In the paper following rheological properties has been described: the dependence of viscosity on a temperature of a sample and hysteresis loop test. The time dependence test was performed for a confirmation thixotropic behaviour. Based on measured values Arrhenius mathematical model has been applied. The activation energy was determined by using of this model. Tests have been carried out in the temperature range from 5 °C to 40 °C. Rheological tests proved that malt wort behaves as Newtonian fluid in all temperatures and hopped wort behaves as non-Newtonian fluid at low temperatures. Thixotropic behaviour is caused by the content of the rests of hops heads or malt scraps.

The O–C diagrams of minor planets − a new approach to modelling the rotation

1999 ◽  
Vol 173 ◽  
pp. 185-188
Author(s):  
Gy. Szabó ◽  
K. Sárneczky ◽  
L.L. Kiss
Keyword(s):  
Error Analysis ◽  
Time Dependence ◽  
Theoretical Work ◽  
Minor Planet ◽  
Minor Planets ◽  
New Approach ◽  
Preliminary Results ◽  
Ccd Observations

AbstractA widely used tool in studying quasi-monoperiodic processes is the O–C diagram. This paper deals with the application of this diagram in minor planet studies. The main difference between our approach and the classical O–C diagram is that we transform the epoch (=time) dependence into the geocentric longitude domain. We outline a rotation modelling using this modified O–C and illustrate the abilities with detailed error analysis. The primary assumption, that the monotonity and the shape of this diagram is (almost) independent of the geometry of the asteroids is discussed and tested. The monotonity enables an unambiguous distinction between the prograde and retrograde rotation, thus the four-fold (or in some cases the two-fold) ambiguities can be avoided. This turned out to be the main advantage of the O–C examination. As an extension to the theoretical work, we present some preliminary results on 1727 Mette based on new CCD observations.

Interpretation of irradiation-induced changes in electron diffractograms and images of extinction contours at low temperatures

1984 ◽  
Vol 42 ◽  
pp. 268-269
Author(s):  
E. Knapek ◽  
H. Formanek ◽  
G. Lefranc ◽  
I. Dietrich
Keyword(s):  
Low Temperatures ◽  
Carbon Films ◽  
Organic Crystals ◽  
Wide Spread ◽  
Lens System ◽  
Preparation Conditions ◽  
Thin Carbon ◽  
Electron Diffractograms ◽  
Diffraction Patterns ◽  
Induced Changes

A few years ago results on cryoprotection of L-valine were reported, where the values of the critical fluence De i.e, the electron exposure which decreases the intensity of the diffraction reflections by a factor e, amounted to the order of 2000 + 1000 e/nm2. In the meantime a discrepancy arose, since several groups published De values between 100 e/nm2 and 1200 e/nm2 /1 - 4/. This disagreement and particularly the wide spread of the results induced us to investigate more thoroughly the behaviour of organic crystals at very low temperatures during electron irradiation.For this purpose large L-valine crystals with homogenuous thickness were deposited on holey carbon films, thin carbon films or Au-coated holey carbon films. These specimens were cooled down to nearly liquid helium temperature in an electron microscope with a superconducting lens system and irradiated with 200 keU-electrons. The progress of radiation damage under different preparation conditions has been observed with series of electron diffraction patterns and direct images of extinction contours.

Radiation Damage of Support Films

1981 ◽  
Vol 39 ◽  
pp. 28-29
Author(s):  
H.A. Cohen ◽  
W. Chiu
Keyword(s):  
Transfer Function ◽  
Low Temperatures ◽  
Carbon Support ◽  
Contrast Transfer Function ◽  
Electron Dose ◽  
Imaging Parameters ◽  
Negative Stain ◽  
Phase Corrections ◽  
Two Parameters ◽  
Medium Dose

The goal of imaging the finest detail possible in biological specimens leads to contradictory requirements for the choice of an electron dose. The dose should be as low as possible to minimize object damage, yet as high as possible to optimize image statistics. For specimens that are protected by low temperatures or for which the low resolution associated with negative stain is acceptable, the first condition may be partially relaxed, allowing the use of (for example) 6 to 10 e/Å2. However, this medium dose is marginal for obtaining the contrast transfer function (CTF) of the microscope, which is necessary to allow phase corrections to the image. We have explored two parameters that affect the CTF under medium dose conditions.Figure 1 displays the CTF for carbon (C, row 1) and triafol plus carbon (T+C, row 2). For any column, the images to which the CTF correspond were from a carbon covered hole (C) and the adjacent triafol plus carbon support film (T+C), both recorded on the same micrograph; therefore the imaging parameters of defocus, illumination angle, and electron statistics were identical.

In situ Tensile Experiments at Low Temperatures on Niobium Single Crystals by H.V.E.M.

1975 ◽  
Vol 33 ◽  
pp. 58-59
Author(s):  
F. H. Louchet ◽  
L. P. Kubin
Keyword(s):  
Electron Microscope ◽  
Transition Temperature ◽  
Low Temperature ◽  
Slip System ◽  
Low Temperatures ◽  
Tensile Axis ◽  
Image Intensifier ◽  
Screw Dislocations ◽  
Source Operation

Experiments have been carried out on the 3 MeV electron microscope in Toulouse. The low temperature straining holder has been previously described Images given by an image intensifier are recorded on magnetic tape.The microtensile niobium samples are cut in a plane with the two operative slip directions [111] and lying in the foil plane. The tensile axis is near [011].Our results concern:- The transition temperature of niobium near 220 K: at this temperature and below an increasing difference appears between the mobilities of the screw and edge portions of dislocations loops. Source operation and interactions between screw dislocations of different slip system have been recorded.

Ultrastructure of the soil fungus, Geomyces pannorus

1984 ◽  
Vol 42 ◽  
pp. 738-739
Author(s):  
J. A. Traquair ◽  
E. G. Kokko
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Fine Structure ◽  
Low Temperatures ◽  
Soil Fungus ◽  
Organic Soils ◽  
Anatomical Studies ◽  
Transmission Electron ◽  
Electron Microscopical ◽  
Scanning Electron

With the advent of improved dehydration techniques, scanning electron microscopy has become routine in anatomical studies of fungi. Fine structure of hyphae and spore surfaces has been illustrated for many hyphomycetes, and yet, the ultrastructure of the ubiquitous soil fungus, Geomyces pannorus (Link) Sigler & Carmichael has been neglected. This presentation shows that scanning and transmission electron microscopical data must be correlated in resolving septal structure and conidial release in G. pannorus.Although it is reported to be cellulolytic but not keratinolytic, G. pannorus is found on human skin, animals, birds, mushrooms, dung, roots, and frozen meat in addition to various organic soils. In fact, it readily adapts to growth at low temperatures.

Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

1991 ◽  
Vol 49 ◽  
pp. 900-901 ◽  
Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber
Keyword(s):  
Transport Properties ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Lattice Parameter ◽  
Crystalline Quality ◽  
Insulating Properties ◽  
Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

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