Thermally-induced stresses in thin aluminum layers grown on silicon

2004 ◽  
Vol 19 (1) ◽  
pp. 74-76 ◽  
Author(s):  
E. Eiper ◽  
R. Resel ◽  
C. Eisenmenger-Sittner ◽  
M. Hafok ◽  
J. Keckes
Keyword(s):  
Thin Films ◽  
Temperature Hysteresis ◽  
X Ray Diffraction ◽  
Hill Model ◽  
Thermally Induced ◽  
X Ray ◽  
Plastic Yield ◽  
Thin Aluminum ◽  
Different Temperatures ◽  
The Hill

Elevated-temperature X-ray diffraction (XRD) was used to evaluate residual stresses in aluminum thin films on Si(100). The films with a thickness of 2 μm were deposited by magnetron sputtering at different temperatures, and XRD measurements were carried out with the heating stage DHS 900 mounted on a Seifert 3000 PTS diffractometer. The strains were characterized always in temperature cycles from room temperature up to 450 °C with steps of 50 °C. Stress values in weakly textured thin films were calculated using the Hill model, applying temperature-dependent X-ray elastic constants of aluminum. The thin films exhibit specific temperature hysteresis of stresses depending on the deposition temperature (being from the range of 50 °C–300 °C). The results allow us to quantify contributions of intrinsic and extrinsic stresses to the total stress in the layers as well as to evaluate phenomena related to plastic yield. The comparison of the data from thin films deposited at different temperatures indicate a dependence of intrinsic stresses on the substrate temperature during deposition as well as the presence of the plastic yield in films during the cool-down after deposition

Morphology, Opto-Electronic and Dielectric Properties of Vacuum Sublimed CuPc Based Thin Films

2019 ◽  
Vol 14 (11) ◽  
pp. 1523-1531
Author(s):  
Manjit Kaur ◽  
Rakesh Dogra ◽  
Narinder Arora ◽  
Navjeet Sharma ◽  
Rajesh Kumar
Keyword(s):  
Thin Films ◽  
Hole Mobility ◽  
X Ray Diffraction ◽  
Visible Absorption ◽  
X Ray ◽  
Optical Band Gaps ◽  
Different Temperatures ◽  
Evaporation Technique ◽  
Uv Visible ◽  
Substrate Temperatures

AC transport properties and dielectric response of sandwich geometry (Ag/CuPc/Ag) of CuPc(CuPc) thin films deposited using thermal evaporation technique have been studied within frequency range 1 Hz–10 KHz and in temperature range 303–383 K. Scanning electron microscope (SEM) investigations of these films reveal fiber like morphology. Crystalline natures of CuPc films have been characterized using X-ray diffraction for different temperatures. The molecular orientations in films for different substrate temperatures have been confirmed by Raman spectroscopy. The optical band gaps calculated from the UV–Visible absorption spectra is found to lie in the range 3.01–3.15 eV. Electrical conductivity of CuPc films increases with increase of temperature. The hole mobility values of CuPc films at different temperatures have been calculated using negative differential susceptance (–ΔB) technique. Both capacitance and dielectric constant have been found to decrease with the increase of frequency and temperature.

Optical Properties of Nano-CuInSi Thin Films Prepared by Multilayer Synthesized Method

2011 ◽  
Vol 403-408 ◽  
pp. 1094-1098
Author(s):  
Jian Sheng Xie ◽  
Ping Luan ◽  
Jin Hua Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Surface ◽  
X Ray Diffraction ◽  
Sem Images ◽  
X Ray ◽  
N2 Atmosphere ◽  
Double Beam ◽  
Absorption Studies ◽  
Different Temperatures

Thin Nano-CuInSi films have been prepared by multilayer synthesized method using magnetron sputtering technology, and followed by annealing in N2 atmosphere at different temperatures. The structures of CuInSi films were detected by X-ray diffraction(XRD); X-ray diffraction studies of the annealed films indicate the presence of CuInSi, the peak of main crystal phase is at 2θ=42.450°; the morphology of the film surface was studied by SEM. The SEM images show that the crystalline of the film prepared by multilayer synthesized method was granulated. The transmittance (T) spectra of the films were measured by Shimadzu UV-2450 double beam spectrophotometer. The calculated absorption coefficient is larger than 105 cm−1 when the wavelength is shorter than 750 nm. The band gap has been estimated from the optical absorption studies and found to be about 1.47 eV, but changes with purity of CuInSi. CuInSi thin film is a potential absorber layer material applied in solar cells and photoelectric automatic control.

Structural and Optical Properties of ZnO Film Precursors for Multilayered Transparent Solar Cell Electrodes

2015 ◽  
Vol 1132 ◽  
pp. 217-223
Author(s):  
E.R. Rwenyagila ◽  
B. Agyei-Tuffour ◽  
M.G.Z. Kana ◽  
O. Akin-Ojo ◽  
W.O. Soboyejo
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Deposition Power ◽  
Different Temperatures

This work examines the modification of the structural and optical properties of ZnO thin films by control of deposition and post-treatment parameters. ZnO thin films were deposited by RF magnetron sputtering from a ceramic target locally made at SHESTCO in Abuja, Nigeria. X-ray diffraction measurements characterized the different films prior to thermal annealing as extremely amorphous with average UV-VIS transmittance spectra between 80 and 90%. Annealing at different temperatures and time spans influenced the formation of Wurtzite (002) oriented ZnO crystallites. Contrary to the crystallinity of the films, which was strongly influenced by the deposition power, the optical transmission of the films was only slightly influenced by the deposition power and it was less sensitive to the crystallinity of ZnO thin films.

Formation of the high temperature phase in vacuum deposited SnSe thin films

1986 ◽  
Vol 175 (1-2) ◽  
Author(s):  
T. Subba Rao ◽  
B. K. Samantaray ◽  
A. K. Chaudhuri
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
High Temperature Phase ◽  
Temperature Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Substrate Temperatures ◽  
Low Temperature Phase

AbstractThin films of SnSe vacuum deposited on glass substrates kept at different temperatures have been studied by X-ray diffraction. It is observed that the high temperature phase of SnSe, usually found above 807 K is frozen in along with the low temperature phase when deposited at substrate temperatures of 473 K and above.

scholarly journals Effect of Annealing Temperature on Microstructure and Resistivity of TiC Thin Films

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 457
Author(s):  
Litipu Aihaiti ◽  
Kamale Tuokedaerhan ◽  
Beysen Sadeh ◽  
Min Zhang ◽  
Xiangqian Shen ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
High Vacuum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Good Crystallinity ◽  
Different Temperatures ◽  
Amorphous States ◽  
Spherical Growth

Titanium carbide (TiC) thin films were prepared by non-reactive simultaneous double magnetron sputtering. After deposition, all samples were annealed at different temperatures under high-vacuum conditions. This paper mainly discusses the influence of deposition methods and annealing temperatures on microstructure, surface topography, bonding states and electrical resistivity of TiC films. XRD (X-ray diffraction) results show that TiC thin films can still form crystals without annealing, and the crystallinity of thin films is improved after annealing. The estimated grain size of the TiC films varies from 8.5 nm to 14.7 nm with annealing temperature. It can be seen from SEM (scanning electron microscope) images that surfaces of the films are composed of irregular particles, and when the temperature reaches to 800 °C, the shape of the particles becomes spherical. Growth rate of film is about 30.8 nm/min. Oxygen-related peaks were observed in XPS (X-ray photoelectron spectroscopy) spectra, which is due to the absorption of oxygen atoms on the surface of the film when exposed to air. Raman spectra confirm the formation of TiC crystals and amorphous states of carbon. Resistivity of TiC films decreases monotonically from 666.73 to 86.01 μΩ·cm with the increase in annealing temperature. In brief, the TiC thin films prepared in this study show good crystallinity, thermal stability and low resistivity, which can meet the requirements of metal gate applications.

scholarly journals Electrical and optical properties of spin-coated SnO2 nanofilms

2014 ◽  
Vol 32 (4) ◽  
pp. 729-736 ◽  
Author(s):  
Weronika Izydorczyk ◽  
Krzysztof Waczyński ◽  
Jacek Izydorczyk ◽  
Paweł Karasiński ◽  
Janusz Mazurkiewicz ◽  
...  
Keyword(s):  
Thin Films ◽  
Precursor Solution ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Different Temperatures ◽  
Sno2 Thin Films ◽  
Deposited Films ◽  
Nanocrystalline Thin Films

AbstractSnO2 nanocrystalline thin films have been deposited on oxidized silicon substrates by spin-coating from a precursor solution, followed by slow thermal annealing in oxygen atmosphere at different temperatures (500 to 900 °C). The precursor solution consisted of 1.0 to 2.0 M SnCl4·5H2O in isopropanol. It was shown that the concentration of the precursor solution, annealing temperature and heating rate had a significant effect on the structural, optical and electrical properties of the studied thin films. The topography of SnO2 thin films was examined by scanning electron microscopy (SEM). Furthermore, as-deposited films were characterized by X-ray diffraction (XRD), UV-Vis and impedance spectroscopy.

Effects of Annealing on the Properties of Copper Oxide Thin Films

2015 ◽  
Vol 819 ◽  
pp. 189-192
Author(s):  
Dewi Suriyani Che Halin ◽  
Ibrahim Abu Talib ◽  
Abdul Razak Daud ◽  
Muhammad Azmi Abd Hamid
Keyword(s):  
Thin Films ◽  
Copper Oxide ◽  
Spin Coating ◽  
Sol Gel ◽  
Cupric Chloride ◽  
X Ray Diffraction ◽  
Oxide Coatings ◽  
X Ray ◽  
Glass Substrates ◽  
Different Temperatures

Thin films of copper oxide were successively deposited on glass substrates by sol-gel like spin coating for 40 s and annealed in air at different temperatures (200-400°C). Precursor solutions were prepared by dissolving cupric chloride in methanol. Various stabilizers and additives were used to enhance the solubility of cupric chloride and to improve the adhesion between the films and the glass substrates. Glucopone was used as a surfactant to reduce the surface energy. The evolution of oxide coatings under thermal treatment was studied by glancing incidence X-ray diffraction and scanning electron microscopy. Annealing the films in air at 300°C converts the films to CuO. The general appearances of the films were uniform and brownish in color.

FORMATION OF TWO LAYERS IN Pr1-xCaxBa2Cu3O7-y(0≤x≤0.5) THIN FILMS DEPOSITED AT DIFFERENT TEMPERATURES

2000 ◽  
Vol 14 (16) ◽  
pp. 1651-1657
Author(s):  
J. A. DÍAZ ◽  
O. CONTRERAS ◽  
J. M. SIQUEIROS
Keyword(s):  
Thin Films ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
Transmission Electron Microscopy Analysis ◽  
X Ray ◽  
Cell Parameters ◽  
Transmission Electron ◽  
Electron Microscopy Analysis ◽  
Different Temperatures ◽  
Microscopy Analysis

We have grown epitaxial Pr 1-x Ca x Ba 2 Cu 3 O 7-y(0≤x≤0.5) thin films on SrTiO 3 and Yttrium stabilized zirconia (YSZ) substrates by pulsed laser deposition at different temperatures. X-ray diffraction and transmission electron microscopy analysis revealed epitaxial growth on YSZ substrates for x=0 along the a and c axis directions for T=570° C , where first the film grows oriented along a-axis and afterward, it undergoes a shift in the orientation, growing in the c-axis direction from then on. The cell parameters were c=1.166 nm and a~b=0.386 nm .

Microraman Spectroscopy and X-Ray Diffraction Studies of Ti-W-O Thin Films

1996 ◽  
Vol 441 ◽  
Author(s):  
Luigi Sangaletti ◽  
Elza Bontempi ◽  
Laura E. Depero ◽  
P. Galinetto ◽  
Silvio Groppelli ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Different Temperatures ◽  
Microraman Spectroscopy ◽  
Scanning Electron

AbstractThin films of the Ti-W-O system grown by r.f. reactive sputtering from a Ti-W (10%–90% weight) target have been studied by Raman and microraman spectroscopy, X-ray diffraction and scanning electron microscopy with the aim to investigate their microstructural and morphological properties. To this purpose, the kinetics of structural transformations at different temperatures (600 °C, and 800 °C) have been studied, and the effect of Ti on the WO3 lattice has been singled out. The results show that annealing at different temperatures induces a microstructural evolution from the amorphous phase of the as-deposited thin film to WO3 crystalline phases via an intermediate cubic disordered phase of WO3. The effect of Ti on this cubic phase and on the thin film morphology is also investigated with the aid of microraman and scanning electron microscopy analysis. The results show that two distinct phases arise upon long annealing treatments; namely, small crystallites belonging to the WO3 monoclinic phase are dispersed on a layer composed of a disordered cubic WO3 phase with a high Ti content.

Sign in / Sign up

Export Citation Format

Share Document