Morphology, Opto-Electronic and Dielectric Properties of Vacuum Sublimed CuPc Based Thin Films

2019 ◽  
Vol 14 (11) ◽  
pp. 1523-1531
Author(s):  
Manjit Kaur ◽  
Rakesh Dogra ◽  
Narinder Arora ◽  
Navjeet Sharma ◽  
Rajesh Kumar
Keyword(s):  
Thin Films ◽  
Hole Mobility ◽  
X Ray Diffraction ◽  
Visible Absorption ◽  
X Ray ◽  
Optical Band Gaps ◽  
Different Temperatures ◽  
Evaporation Technique ◽  
Uv Visible ◽  
Substrate Temperatures

AC transport properties and dielectric response of sandwich geometry (Ag/CuPc/Ag) of CuPc(CuPc) thin films deposited using thermal evaporation technique have been studied within frequency range 1 Hz–10 KHz and in temperature range 303–383 K. Scanning electron microscope (SEM) investigations of these films reveal fiber like morphology. Crystalline natures of CuPc films have been characterized using X-ray diffraction for different temperatures. The molecular orientations in films for different substrate temperatures have been confirmed by Raman spectroscopy. The optical band gaps calculated from the UV–Visible absorption spectra is found to lie in the range 3.01–3.15 eV. Electrical conductivity of CuPc films increases with increase of temperature. The hole mobility values of CuPc films at different temperatures have been calculated using negative differential susceptance (–ΔB) technique. Both capacitance and dielectric constant have been found to decrease with the increase of frequency and temperature.

Optical properties of anatase TiO2 films modified by N ion implantation

2012 ◽  
Vol 90 (1) ◽  
pp. 39-43 ◽  
Author(s):  
X. Xiang ◽  
D. Chang ◽  
Y. Jiang ◽  
C.M. Liu ◽  
X.T. Zu
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Atomic Force ◽  
Light Region ◽  
Uv Visible ◽  
Substrate Temperatures

Anatase TiO2 thin films are deposited on K9 glass samples at different substrate temperatures by radio frequency magnetron sputtering. N ion implantation is performed in the as-deposited TiO2 thin films at ion fluences of 5 × 1016, 1 × 1017, and 5 × 1017 ions/cm2. X-ray diffraction, atomic force microscope, X-ray photoelectron spectroscopy (XPS), and UV–visible spectrophotometer are used to characterize the films. With increasing N ion fluences, the absorption edges of anatase TiO2 films shift to longer wavelengths and the absorbance increases in the visible light region. XPS results show that the red shift of TiO2 films is due to the formation of N–Ti–O compounds. As a result, photoactivity is enhanced with increasing N ion fluence.

Formation of the high temperature phase in vacuum deposited SnSe thin films

1986 ◽  
Vol 175 (1-2) ◽  
Author(s):  
T. Subba Rao ◽  
B. K. Samantaray ◽  
A. K. Chaudhuri
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
High Temperature Phase ◽  
Temperature Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Substrate Temperatures ◽  
Low Temperature Phase

AbstractThin films of SnSe vacuum deposited on glass substrates kept at different temperatures have been studied by X-ray diffraction. It is observed that the high temperature phase of SnSe, usually found above 807 K is frozen in along with the low temperature phase when deposited at substrate temperatures of 473 K and above.

scholarly journals Optical properties for TiO2 / PMMA nanocomposite thin films prepared by plasma jet

2018 ◽  
Vol 15 (35) ◽  
pp. 24-28
Author(s):  
Saba J. Kadhem
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Titanium Oxide ◽  
Absorption Spectra ◽  
Plasma Jet ◽  
X Ray Diffraction ◽  
Visible Absorption ◽  
X Ray ◽  
Nanocomposite Thin Films ◽  
Uv Visible

PMMA/TiO2 homogeneous thin films were deposited by using plasma jet system under normal atmospheric pressure and room temperature. PMMA/TiO2 nanocomposite thin film synthesized by plasma polymerization. Titanium oxide was mixed with Methyl Methacrylate Monomer (MMA) with specific weight ratios (1, 3 and 5 grams of TiO2 per 100 ml of MMA). Optical properties of PMMA/TiO2 nanocomposite thin films were characterized by UV-Visible absorption spectra using a double beam UV-Vis-NIR Spectrophotometer. The thin films surface morphological analysis is carried out by employing SEM. The structure analysis are achieved by X-ray diffraction. UV-Visible absorption spectra shows that the increasing the concentration of titanium oxide added to the polymer leads to shift the peak position (λmax) toward the infrared region of the electromagnetic spectrum. Also the peak width increases when the concentration of TiO2 increases. It can be controlled optical energy band gap of PMMA/TiO2 nanocomposite thin films by changing concentration of TiO2. SEM indicate a uniform distribution of titanium oxide particles in PMMA matrix. The x-ray diffraction pattern indicated that the thin films have amorphous structure.

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

ITO Thin Films on Silicon Buffer by Sol Gel Method

2006 ◽  
Vol 514-516 ◽  
pp. 1155-1160 ◽  
Author(s):  
Talaat Moussa Hammad
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Optical Transmission ◽  
Sol Gel ◽  
Precursor Solution ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ito Thin Films ◽  
Uv Visible

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.

Structural and Optical Characterization of Zinc Telluride Thin Films

2013 ◽  
Vol 665 ◽  
pp. 254-262 ◽  
Author(s):  
J.R. Rathod ◽  
Haresh S. Patel ◽  
K.D. Patel ◽  
V.M. Pathak
Keyword(s):  
Thin Films ◽  
Extinction Coefficient ◽  
Nir Spectroscopy ◽  
Optical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Evaporation Technique ◽  
Film Form ◽  
Znte Thin Films

Group II-VI compounds have been investigated largely in last two decades due to their interesting optoelectronic properties. ZnTe, a member of this family, possesses a bandgap around 2.26eV. This material is now a day investigated in thin film form due to its potential towards various viable applications. In this paper, the authors report their investigations on the preparation of ZnTe thin films using vacuum evaporation technique and their structural and optical characterizations. The structural characterization, carried out using an X-ray diffraction (XRD) technique shows that ZnTe used in present case possesses a cubic structure. Using the same data, the micro strain and dislocation density were evaluated and found to be around 1.465×10-3lines-m2and 1.639×1015lines/m2respecctively. The optical characterization carried out in UV-VIS-NIR region reveals the fact that band gap of ZnTe is around 2.2eV in present case. In addition to this, it was observed that the value of bandgap decreases as the thickness of films increases. The direct transitions of the carries are involved in ZnTe. Using the data of UV-VIS-NIR spectroscopy, the transmission coefficient and extinction coefficient were also calculated for ZnTe thin films. Besides, the variation of extinction coefficient with wavelength has also been discussed here.

Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Large Change ◽  
Amorphous Structure ◽  
Cobalt Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

scholarly journals Shedding Light on Phase Stability and Surface Engineering of Formamidinium Lead Iodide (FaPbI3) Thin Films for Solar Cells

2021 ◽  
Vol 12 (1) ◽  
pp. 1
Author(s):  
Julia Marí-Guaita ◽  
Amal Bouich ◽  
Bernabé Marí
Keyword(s):  
Thin Films ◽  
Surface Engineering ◽  
Optical Analysis ◽  
X Ray Diffraction ◽  
Lead Iodide ◽  
X Ray ◽  
Structure Surface ◽  
Uv Visible ◽  
The Stability ◽  
Humidity Environment

In this work, FAPbI3 thin films with different antisolvents (toluene, diethyl ether and chlorobenzene) were successfully elaborated by the spin coating technique to study the influence of the different antisolvents in the films. The crystal structure, surface morphology and optical properties were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM) photoluminescence and UV–visible spectrometry. According to XRD, the crystalline structure of FAPbI3 was found in the orientation of the (110) plane, and it is observed that the type of antisolvent content in the absorber layer plays an important role in the growth and stabilization of the film. Here, chlorobenzene leads to a smooth and homogenous surface, a large grain size and a pinhole-free perovskite film. Additionally, the optical analysis revealed that the band gap is in the range from 1.55 to 1.57 eV. Furthermore, in an approximately 60% humidity environment and after two weeks, the stability and absorption of FaPbI3 showed low degradation.

scholarly journals Effect of indium content on X- ray diffraction and optical constants of InxSe1-x thin films

2019 ◽  
Vol 14 (29) ◽  
pp. 55-72
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Optical Constants ◽  
Indium Content ◽  
Degree Of Crystallinity ◽  
X Ray Diffraction ◽  
Dispersion Energy ◽  
X Ray ◽  
Evaporation Technique ◽  
High Indium Content ◽  
Diffraction Patterns

Alloys of InxSe1-x were prepared by quenching technique withdifferent In content (x=10, 20, 30, and 40). Thin films of these alloyswere prepared using thermal evaporation technique under vacuum of10-5 mbar on glass, at room temperature R.T with differentthicknesses (t=300, 500 and 700 nm). The X–ray diffractionmeasurement for bulk InxSe1-x showed that all alloys havepolycrystalline structures and the peaks for x=10 identical with Se,while for x=20, 30 and 40 were identical with the Se and InSestandard peaks. The diffraction patterns of InxSe1-x thin film showthat with low In content (x=10, and 20) samples have semicrystalline structure, The increase of indium content to x=30decreases degree of crystallinity and further increase of indiumcontent to x=40 leads to convert structure to amorphous. Increase ofthickness from 300 to 700nm increases degree of crystallinity for allindium content. Transmittance measurements were used to calculaterefractive index n and the extinction coefficient k using Swanepole’smethod. The optical constants such as refractive index (n), extinctioncoefficient (k) and dielectric constant (εr, εi) increases for low indiumcontent samples and decreases for high indium content samples,while increase of thickness increases optical constants for all xvalues. The oscillator energy E0, dispersion energy Ed, and otherparameters have been determined by Wemple - DiDomenico singleoscillator approach.

Structural and optical properties of Ba(Co1−xZnx)SiO4 (x = 0.2, 0.4, 0.6, 0.8)

2019 ◽  
Vol 34 (3) ◽  
pp. 242-250 ◽  
Author(s):  
J. Anike ◽  
R. Derbeshi ◽  
W. Wong-Ng ◽  
W. Liu ◽  
D. Windover ◽  
...  
Keyword(s):  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Powder Diffraction File ◽  
Visible Absorption ◽  
X Ray ◽  
Lattice Volume ◽  
Uv Visible ◽  
Diffraction Patterns ◽  
Pattern Determination ◽  
Bright Blue

Structural characterization and X-ray reference powder pattern determination have been conducted for the Co- and Zn-containing tridymite derivatives Ba(Co1−xZnx)SiO4 (x = 0.2, 0.4, 0.6, 0.8). The bright blue series of Ba(Co1−xZnx)SiO4 crystallized in the hexagonal P63 space group (No. 173), with Z = 6. While the lattice parameter “a” decreases from 9.126 (2) Å to 9.10374(6) Å from x = 0.2 to 0.8, the lattice parameter “c” increases from 8.69477(12) Å to 8.72200(10) Å, respectively. Apparently, despite the similarity of ionic sizes of Zn2+ and Co2+, these opposing trends are due to the framework tetrahedral tilting of (ZnCo)O4. The lattice volume, V, remains comparable between 626.27 Å3 and 626.017 (7) Å3 from x = 0 to x = 0.8. UV-visible absorption spectrum measurements indicate the band gap of these two materials to be ≈3.3 and ≈3.5 eV, respectively, therefore potential UV photocatalytic materials. Reference powder X-ray diffraction patterns of these compounds have been submitted to be included in the Powder Diffraction File (PDF).

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