scholarly journals A Flexible and Highly Sensitive Piezoresistive Pressure Sensor Based on Micropatterned Films Coated with Carbon Nanotubes

2016 ◽  
Vol 2016 ◽  
pp. 1-5 ◽  
Author(s):  
Jia-lin Yao ◽  
Xing Yang ◽  
Na Shao ◽  
Hui Luo ◽  
Ting Zhang ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Gas Sensing ◽  
Fluid Pressure ◽  
High Sensitivity ◽  
Sensing Element ◽  
Pressure Sensing ◽  
Piezoresistive Pressure Sensor ◽  
Highly Sensitive ◽  
Flexible Pressure Sensor ◽  
Low Consumption

Excellent flexibility, high sensitivity, and low consumption are essential characteristics in flexible microtube pressure sensing occasion, for example, implantable medical devices, industrial pipeline, and microfluidic chip. This paper reports a flexible, highly sensitive, and ultrathin piezoresistive pressure sensor for fluid pressure sensing, whose sensing element is micropatterned films with conductive carbon nanotube layer. The flexible pressure sensor, the thickness of which is 40 ± 10 μm, could be economically fabricated by using biocompatible polydimethylsiloxane (PDMS). Experimental results show that the flexible pressure sensor has high sensitivity (0.047 kPa−1in gas sensing and 5.6 × 10−3 kPa−1in liquid sensing) and low consumption (<180 μW), and the sensor could be used to measure the pressure in curved microtubes.

Pressure Sensing Fabric

2006 ◽  
Vol 920 ◽  
Author(s):  
Zhang Hui ◽  
Tao Xiao Ming ◽  
Yu Tong Xi ◽  
Li Xin Sheng
Keyword(s):  
Pressure Sensor ◽  
Fabrication Process ◽  
Sensing Element ◽  
Large Area ◽  
Pressure Sensing ◽  
Conductive Yarns ◽  
Flexible Pressure Sensor ◽  
Fabric Surface ◽  
The Cost ◽  
Resistive Grids

AbstractThis paper presents an approach for decoding the pressure information exerted over a piece of fabric by means of resistive sensing. The proposed sensor includes a distributed resistive grids constructed by two systems of orthogonally contacted electrical conductive yarns, with no external sensing element to be attached on the fabric. Since the conductive yarns serve as the sensing and wiring elements simultaneously, this design simplifies the fabrication process, reduces the cost and makes the production of large area flexible pressure sensor possible. The location of the pressure applied on the fabric can be identified by detecting the position where the change of the resistances occurs between two embroidered yarns. Meanwhile, the magnitude of the pressure can be acquired by measuring the variations of the resistance. In order to eliminate the “crosstalk” effect between adjoining fibers, the yarns were separately wired on the fabric surface.

A highly sensitive and flexible capacitive pressure sensor based on a micro-arrayed polydimethylsiloxane dielectric layer

2018 ◽  
Vol 6 (48) ◽  
pp. 13232-13240 ◽  
Author(s):  
Longquan Ma ◽  
Xingtian Shuai ◽  
Yougen Hu ◽  
Xianwen Liang ◽  
Pengli Zhu ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Dielectric Layer ◽  
Sandwich Structure ◽  
High Sensitivity ◽  
Capacitive Pressure Sensor ◽  
Pdms Substrate ◽  
Highly Sensitive ◽  
Flexible Pressure Sensor

A flexible pressure sensor with high sensitivity has been proposed which consists of a typical sandwich structure by integrating a PDMS substrate with a micro-arrayed PDMS dielectric layer.

High Sensitivity Pressure Measurement Using Van der Pauw Structure as a Sensing Element

2009 ◽  
Author(s):  
R. Cassel ◽  
A. Mishty ◽  
A. Mian
Keyword(s):  
High Sensitivity ◽  
Wheatstone Bridge ◽  
Biaxial Stress ◽  
Sensing Element ◽  
Pressure Sensing ◽  
Piezoresistive Pressure Sensor ◽  
Piezoresistive Sensor ◽  
Biaxial Stress State ◽  
Simple Geometry ◽  
Van Der Pauw

In this paper, we presented is a four-terminal piezoresistive sensor commonly referred to as a van der Pauw (VDP) structure for its application to MEMS pressure sensing. In a recent study, our team has determined the relation between the biaxial stress state and the piezoresistive response of a VDP structure by combining the VDP resistance equations with the equations governing silicon piezoresistivity and has proposed a new piezoresistive pressure sensor. It was observed that the sensitivity of the VDP sensor is over three times higher than the conventional filament type Wheatstone bridge resistor. To check our theoretical findings, we fabricated several (100) silicon diaphragms with both the VDP sensors and filament resistor sensors on the same wafer so both the sensor elements have same doping concentration. The diaphragms were subjected to known pressures, and the pressure sensitivities of both types of sensors were measured using an in-house built calibration setup. It was found that the VDP devices had a linear response to pressure as expected, and were more sensitive than the resistor sensors. Also, the VDP sensors provided a number of additional advantages, such as its size independent sensitivity and simple fabrication steps due to its simple geometry.

CMOS-MEMS Based Current Mirror MOSFET Embedded Pressure Sensor for Healthcare and Biomedical Applications

2013 ◽  
Vol 647 ◽  
pp. 315-320 ◽  
Author(s):  
Pradeep Kumar Rathore ◽  
Brishbhan Singh Panwar
Keyword(s):  
Pressure Sensor ◽  
Biomedical Applications ◽  
Circuit Simulation ◽  
Applied Pressure ◽  
Pressure Sensors ◽  
Cmos Technology ◽  
Current Mirror ◽  
Sensing Element ◽  
Pressure Sensing ◽  
Cmos Mems

This paper reports on the design and optimization of current mirror MOSFET embedded pressure sensor. A current mirror circuit with an output current of 1 mA integrated with a pressure sensing n-channel MOSFET has been designed using standard 5 µm CMOS technology. The channel region of the pressure sensing MOSFET forms the flexible diaphragm as well as the strain sensing element. The piezoresistive effect in MOSFET has been exploited for the calculation of strain induced carrier mobility variation. The output transistor of the current mirror forms the active pressure sensing MOSFET which produces a change in its drain current as a result of altered channel mobility under externally applied pressure. COMSOL Multiphysics is utilized for the simulation of pressure sensing structure and Tspice is employed to evaluate the characteristics of the current mirror pressure sensing circuit. Simulation results show that the pressure sensor has a sensitivity of 10.01 mV/MPa. The sensing structure has been optimized through simulation for enhancing the sensor sensitivity to 276.65 mV/MPa. These CMOS-MEMS based pressure sensors integrated with signal processing circuitry on the same chip can be used for healthcare and biomedical applications.

scholarly journals A flexible and highly sensitive pressure sensor based on three-dimensional electrospun carbon nanofibers

RSC Advances ◽  
2021 ◽  
Vol 11 (23) ◽  
pp. 13898-13905
Author(s):  
Chuan Cai ◽  
He Gong ◽  
Weiping Li ◽  
Feng Gao ◽  
Qiushi Jiang ◽  
...  
Keyword(s):  
Carbon Nanofibers ◽  
Pressure Sensor ◽  
Carbon Nanofiber ◽  
Three Dimensional ◽  
High Sensitivity ◽  
Highly Sensitive ◽  
Sensitive Pressure

A three-dimensional electrospun carbon nanofiber network was used to measure press strains with high sensitivity.

Study and Analysis of MEMS Pressure Sensor Based on Applied Mechanics

2013 ◽  
Vol 771 ◽  
pp. 159-162
Author(s):  
Li Feng Qi ◽  
Zhi Min Liu ◽  
Xing Ye Xu ◽  
Guan Zhong Chen ◽  
Xue Qing
Keyword(s):  
Finite Element Analysis ◽  
Pressure Sensor ◽  
High Sensitivity ◽  
Scientific Basis ◽  
Sensor Chip ◽  
Applied Mechanics ◽  
Beam Structure ◽  
Element Analysis ◽  
Sensor Development ◽  
Piezoresistive Pressure Sensor

The relative research of low range and high anti-overload piezoresistive pressure sensor is carried out in this paper and a new kind of sensor chip structure, the double ends-four beam structure, is proposed. Trough the analysis, the sensor chip structure designed in this paper has high sensitivity and linearity. The chip structure is specially suit for the micro-pressure sensor. The theoretical analysis and finite element analysis is taken in this paper, which provide important scientific basis for the pressure sensor development.

scholarly journals High-Performance Resistive Pressure Sensor Based on Elastic Composite Hydrogel of Silver Nanowires and Poly(ethylene glycol)

Micromachines ◽  
2018 ◽  
Vol 9 (9) ◽  
pp. 438 ◽  
Author(s):  
Youngsang Ko ◽  
Dabum Kim ◽  
Goomin Kwon ◽  
Jungmok You
Keyword(s):  
Composite Material ◽  
Ethylene Glycol ◽  
Pressure Sensor ◽  
High Performance ◽  
Silver Nanowires ◽  
High Sensitivity ◽  
Composite Hydrogel ◽  
Poly Ethylene Glycol ◽  
Pressure Sensing ◽  
Poly Ethylene

Improved pressure sensing is of great interest to enable the next-generation of bioelectronics systems. This paper describes the development of a transparent, flexible, highly sensitive pressure sensor, having a composite sandwich structure of elastic silver nanowires (AgNWs) and poly(ethylene glycol) (PEG). A simple PEG photolithography was employed to construct elastic AgNW-PEG composite patterns on flexible polyethylene terephthalate (PET) film. A porous PEG hydrogel structure enabled the use of conductive AgNW patterns while maintaining the elasticity of the composite material, features that are both essential for high-performance pressure sensing. The transparency and electrical properties of AgNW-PEG composite could be precisely controlled by varying the AgNW concentration. An elastic AgNW-PEG composite hydrogel with 0.6 wt % AgNW concentration exhibited high transmittance including T550nm of around 86%, low sheet resistance of 22.69 Ω·sq−1, and excellent bending durability (only 5.8% resistance increase under bending to 10 mm radius). A flexible resistive pressure sensor based on our highly transparent AgNW-PEG composite showed stable and reproducible response, high sensitivity (69.7 kPa−1), low sensing threshold (~2 kPa), and fast response time (20–40 ms), demonstrating the effectiveness of the AgNW-PEG composite material as an elastic conductor.

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