scholarly journals Modeling, Simulation, and Analysis of Novel Threshold Voltage Definition for Nano-MOSFET

2017 ◽  
Vol 2017 ◽  
pp. 1-9 ◽  
Author(s):  
Yashu Swami ◽  
Sanjeev Rai
Keyword(s):  
Threshold Voltage ◽  
Extraction Method ◽  
Extraction Methods ◽  
Operating Conditions ◽  
Short Channel Effects ◽  
Short Channel ◽  
New Approach ◽  
Channel Effects ◽  
Real Value ◽  
Technology Nodes

Threshold voltage (VTH) is the indispensable vital parameter in MOSFET designing, modeling, and operation. Diverse expounds and extraction methods exist to model the on-off transition characteristics of the device. The governing gauge for efficient threshold voltage definition and extraction method can be itemized as clarity, simplicity, precision, and stability throughout the operating conditions and technology node. The outcomes of extraction methods diverge from the exact values due to various short-channel effects (SCEs) and nonidealities present in the device. A new approach to define and extract the real value of VTH of MOSFET is proposed in the manuscript. The subsequent novel enhanced SCE-independent VTH extraction method named “hybrid extrapolation VTH extraction method” (HEEM) is elaborated, modeled, and compared with few prevalent MOSFET threshold voltage extraction methods for validation of the results. All the results are verified by extensive 2D TCAD simulation and confirmed analytically at various technology nodes.

5-TERMINAL THzGaN BASED TRANSISTOR WITH FIELD- AND SPACE-CHARGE CONTROL ELECTRODES

2009 ◽  
Vol 19 (01) ◽  
pp. 7-14 ◽  
Author(s):  
GRIGORY SIMIN ◽  
MICHAEL S. SHUR ◽  
REMIS GASKA
Keyword(s):  
Space Charge ◽  
Field Effect Transistors ◽  
Electron Velocity ◽  
Short Channel Effects ◽  
Short Channel ◽  
New Approach ◽  
Novel Device ◽  
Novel Approach ◽  
Channel Effects ◽  
Heterostructure Field Effect Transistors

We present a novel approach to achieve terahertz-range cutoff frequencies and maximum frequencies of operation of GaN based heterostructure field-effect transistors (HFETs) at relatively high drain voltages. Strong short-channel effects limit the frequency of operation and output power in conventional geometry GaN HFETs. In this work, we propose a novel device with two additional independently biased electrodes controlling the electric field and space-charge close to the gate edges. As a result, the effective gate length extension due to short channel effects is diminished and electron velocity in the device channel is increased. Our simulations show that the proposed five-terminal HFET allows achieving fT=1.28 THz and fmax= 0.815 THz at the drain voltages as high as 12 V. Hence, this device opens up a new approach to designing THz transistor sources.

Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects

2019 ◽  
Vol 16 (40) ◽  
pp. 23-27 ◽  
Author(s):  
Yusuke Kobayashi ◽  
Angada B. Sachid ◽  
Kazuo Tsutsui ◽  
Kuniyuki Kakushima ◽  
Parhat Ahmet ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects

scholarly journals Analyses of Short Channel Effects of Single-Gate and Double-Gate Graphene Nanoribbon Field Effect Transistors

2016 ◽  
Vol 2016 ◽  
pp. 1-8 ◽  
Author(s):  
Hojjatollah Sarvari ◽  
Amir Hossein Ghayour ◽  
Zhi Chen ◽  
Rahim Ghayour
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Tight Binding ◽  
Graphene Nanoribbon ◽  
Basis Set ◽  
Double Gate ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects

Short channel effects of single-gate and double-gate graphene nanoribbon field effect transistors (GNRFETs) are studied based on the atomistic pz orbital model for the Hamiltonian of graphene nanoribbon using the nonequilibrium Green’s function formalism. A tight-binding Hamiltonian with an atomistic pz orbital basis set is used to describe the atomistic details in the channel of the GNRFETs. We have investigated the vital short channel effect parameters such as Ion and Ioff, the threshold voltage, the subthreshold swing, and the drain induced barrier lowering versus the channel length and oxide thickness of the GNRFETs in detail. The gate capacitance and the transconductance of both devices are also computed in order to calculate the intrinsic cut-off frequency and switching delay of GNRFETs. Furthermore, the effects of doping of the channel on the threshold voltage and the frequency response of the double-gate GNRFET are discussed. We have shown that the single-gate GNRFET suffers more from short channel effects if compared with those of the double-gate structure; however, both devices have nearly the same cut-off frequency in the range of terahertz. This work provides a collection of data comparing different features of short channel effects of the single gate with those of the double gate GNRFETs. The results give a very good insight into the devices and are very useful for their digital applications.

Short-Channel Effects in 4H-SiC MOSFETs

2005 ◽  
Vol 483-485 ◽  
pp. 821-824
Author(s):  
Masato Noborio ◽  
Y. Kanzaki ◽  
Jun Suda ◽  
Tsunenobu Kimoto ◽  
Hiroyuki Matsunami
Keyword(s):  
Threshold Voltage ◽  
Empirical Relationship ◽  
Device Simulation ◽  
Oxide Thickness ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Channel Lengths ◽  
P Type

Short-channel effects in SiC MOSFETs have been investigated. Planar MOSFETs with various channel lengths have been fabricated on p-type 4H-SiC (0001), (000-1) and (11-20) faces.^Short-channel effects such as punchthrough behavior, decrease of threshold voltage and deterioration of subthreshold characteristics are observed. Furthermore, the critical channel lengths below which short-channel effects occur are analyzed as a function of p-body doping and oxide thickness by using device simulation. The critical channel lengths in the fabricated SiC MOSFETs are in agreement with those obtained from the device simulation. The results are also in agreement with the empirical relationship for Si MOSFETs.

scholarly journals Potential and Quantum Threshold Voltage Modeling of Gate-All-Around Nanowire MOSFETs

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
M. Karthigai Pandian ◽  
N. B. Balamurugan ◽  
A. Pricilla
Keyword(s):  
Threshold Voltage ◽  
Silicon Nanowire ◽  
Electrical Potential ◽  
Short Channel Effects ◽  
Short Channel ◽  
Weak Inversion ◽  
Silicon Devices ◽  
Proposed Model ◽  
Channel Effects ◽  
Quantum Mechanical Effects

An improved physics-based compact model for a symmetrically biased gate-all-around (GAA) silicon nanowire transistor is proposed. Short channel effects and quantum mechanical effects caused by the ultrathin silicon devices are considered in modelling the threshold voltage. Device geometrics play a very important role in multigate devices, and hence their impact on the threshold voltage is also analyzed by varying the height and width of silicon channel. The inversion charge and electrical potential distribution along the channel are expressed in their closed forms. The proposed model shows excellent accuracy with TCAD simulations of the device in the weak inversion regime.

Analytical Modeling for Short Channel SOI-MOSFET and to Study its Performance

2011 ◽  
Vol 110-116 ◽  
pp. 5150-5154
Author(s):  
K. Senthil Kumar ◽  
Saptarsi Ghosh ◽  
Anup Sarkar ◽  
S. Bhattacharya ◽  
Subir Kumar Sarkar
Keyword(s):  
Low Power ◽  
Threshold Voltage ◽  
Cmos Technology ◽  
Current Drive ◽  
Silicon On Insulator ◽  
Short Channel Effects ◽  
Short Channel ◽  
Soi Mosfet ◽  
Silicon Bulk ◽  
Channel Effects

With the emergence of mobile computing and communication, low power device design and implementation have got a significant role to play in VLSI circuit design. Conventional silicon (bulk CMOS) technology couldn‘t overcome the fundamental physical limitations belonging to sub-micro or nanometer region which leads to alternative device technology like Silicon-on-Insulator (SOI) technology. In a fully-depleted FDSOI structure the electrostatic coupling of channel with source/drain and substrate through the buried layer (BL) is reduced. This allows in turn to reduce the minimal channel length of transistors or to relax the requirements on Si film thickness. A generalized compact threshold voltage model for SOI-MOSFET is developed by solving 2-D Poisson‘s equation in the channel region and analytical expressions are also developed for the same. The performance of the device is evaluated after incorporating the short channel effects. It is observed that in SOI, presence of the oxide layer resists the short channel effects and reduces device anomalies such as substrate leakage by a great factor than bulk-MOS. The threshold voltage and current drive make SOI the ultimate candidate for low power application. Thus SOI-MOSFET technology could very well be the solution for further ultra scale integration of devices and improvised performance.

scholarly journals Analytical Performance of the Threshold Voltage and Subthreshold Swing of CSDG MOSFET

2019 ◽  
Vol 9 (1) ◽  
pp. 10 ◽  
Author(s):  
Uchechukwu Maduagwu ◽  
Viranjay Srivastava
Keyword(s):  
Poisson Equation ◽  
Threshold Voltage ◽  
Silicon Film ◽  
Subthreshold Swing ◽  
Mode Analysis ◽  
Short Channel Effects ◽  
Dimensional Problem ◽  
Short Channel ◽  
Channel Effects ◽  
Channel Potential

In this research work, the threshold voltage and subthreshold swing of cylindrical surrounding double-gate (CSDG) MOSFET have been analyzed. These analyses are based on the analytical solution of 2D Poisson equation using evanescent-mode analysis (EMA). This EMA provides the better approach in solving the 2D Poisson equation by considering the oxide and Silicon regions as a two-dimensional problem, to produce physically consistent results with device simulation for better device performance. Unlike other models such as polynomial exponential and parabolic potential approximation (PPA) which consider the oxide and silicon as one-dimensional problem. Using the EMA, the 2D Poisson equation is decoupled into 1D Poisson equation which represent the long channel potential and 2D Laplace equation describing the impacts of short channel effects (SCEs) in the channel potential. Furthermore, the derived channel potential close-form expression is extended to determine the threshold voltage and subthreshold behavior of the proposed CSDG MOSFET device. This model has been evaluated with various device parameters such as radii Silicon film thickness, gate oxide thickness, and the channel length to analyze the behavior of the short channel effects in the proposed CSDG MOSFET. The accuracy of the derived expressions have been validated with the mathematical and numerical simulation.

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