scholarly journals Tunable Inductors Using Integrated Vanadium Dioxide Phase Change Thin Films

2018 ◽  
Vol 2018 ◽  
pp. 1-7 ◽  
Author(s):  
Liangyu Li ◽  
Weisong Wang ◽  
Eunsung Shin ◽  
Guru Subramanyam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Temperature ◽  
Phase Change ◽  
Vanadium Dioxide ◽  
Room Temperature ◽  
Tuning Range ◽  
Electrical Model ◽  
Temperature Changes ◽  
Tunable Inductors

This paper presents tunable inductors designed with vanadium dioxide (VO2) thin film to implement tunability. Two types of configurations, a single line coil inductor and a dual line coil inductor, are proposed. Tunable inductance is realized by thermally controlling VO2 thin film stub to be an insulator or a conductor. The measurements of inductors are taken in the frequencies range from 0.01 GHz to 10 GHz. The electrical model has been developed to derive the corresponding inductance. The results show that the tuning range is about 69% when the temperature changes from room temperature to above the critical temperature of 68°C.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

A facile room temperature chemical transformation approach for binder-free thin film formation of Ag2Te and lithiation/delithiation chemistry of the film

2016 ◽  
Vol 45 (43) ◽  
pp. 17312-17318 ◽  
Author(s):  
Eun-Kyung Kim ◽  
Dasom Park ◽  
Nabeen K. Shrestha ◽  
Jinho Chang ◽  
Cheol-Woo Yi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Aqueous Solution ◽  
Ion Exchange ◽  
Chemical Transformation ◽  
Room Temperature ◽  
Film Formation ◽  
Synthetic Method ◽  
Binder Free ◽  
Thin Film Formation

An aqueous solution based synthetic method for binder-free Ag2Te thin films using ion exchange induced chemical transformation of Ag/AgxO thin films.

Synthesis of CaWO4:(Eu3+,Tb3+) Thin Films by a Two-Step Method at Room Temperature

2013 ◽  
Vol 710 ◽  
pp. 170-173
Author(s):  
Lian Ping Chen ◽  
Yuan Hong Gao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Composition ◽  
Room Temperature ◽  
Electrochemical Techniques ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
Step Method ◽  
X Ray ◽  
Rare Earth Doped

It is hardly possible to obtain rare earth doped CaWO4thin films directly through electrochemical techniques. A two-step method has been proposed to synthesize CaWO4:(Eu3+,Tb3+) thin films at room temperature. X-ray diffraction, energy dispersive X-ray analysis, spectrophotometer were used to characterize their phase, composition and luminescent properties. Results reveal that (Eu3+,Tb3+)-doped CaWO4films have a tetragonal phase. When the ratio of n (Eu)/n (Tb) in the solution is up to 3:1, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Tb element; on the contrary, when the ratio in the solution is lower than 1:4, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Eu element. Under the excitation of 242 nm, sharp emission peaks at 612, 543, 489 and 589 nm have been observed for CaWO4:(Eu3+,Tb3+) thin films.

scholarly journals A tunable volatile organic compound sensor by using PtOx/GQDs/TiO2 nanocomposite thin films at room temperature under visible-light activation

RSC Advances ◽  
2017 ◽  
Vol 7 (63) ◽  
pp. 39859-39868 ◽  
Author(s):  
Shaofeng Shao ◽  
Yunyun Chen ◽  
Shenbei Huang ◽  
Fan Jiang ◽  
Yunfei Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Visible Light ◽  
Gas Sensors ◽  
Room Temperature ◽  
Light Activation ◽  
Nanocomposite Thin Film ◽  
Nanocomposite Thin Films ◽  
Volatile Organic ◽  
Visible Light Activation

Pt/GQDs/TiO2 nanocomposite thin film-based gas sensors show tunable VOC sensing behaviour at room temperature under visible-light activation.

Formation of ZnO Doped with Mn Thin Film by Electrodeposition and Magnetic Behaviour.

2005 ◽  
Vol 879 ◽  
Author(s):  
M. Abid ◽  
C. Terrier ◽  
J-P Ansermet ◽  
K. Hjort
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Room Temperature ◽  
Magnetic Behaviour ◽  
Spectroscopic Methods ◽  
X Ray Diffraction ◽  
X Ray ◽  
Doped Zno ◽  
Mn Doped ◽  
Weak Ferromagnetic

AbstractFollowing the theory, ferromagnetism is predicted in Mn- doped ZnO, Indeed, ferromagnetism above room temperature was recently reported in thin films as well as in bulk samples made of this material. Here, we have prepared Mn doped ZnO by electrodeposition. The samples have been characterized by X-ray diffraction and spectroscopic methods to ensure that the dopants are substitutional. Some samples exhibit weak ferromagnetic properties at room temperature, however to be useful for spintronics this material need additional carriers provided by others means.

Fe doping-stabilized γ-Ga2O3 thin films with a high room temperature saturation magnetic moment

2020 ◽  
Vol 8 (2) ◽  
pp. 536-542 ◽  
Author(s):  
Yuanqi Huang ◽  
Ang Gao ◽  
Daoyou Guo ◽  
Xia Lu ◽  
Xiao Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Moment ◽  
Room Temperature ◽  
Fe Doping ◽  
Saturation Magnetic Moment ◽  
First Time

A thermostable Fe-doped γ-Ga2O3 thin film with a high room temperature saturation magnetic moment of 5.73 μB/Fe has been obtained for the first time.

Analyzing TEM Images for Accurate Determination of Lattice Parameters of Vacuum Evaporated SnSe Thin Film by Image Processing Software

2016 ◽  
Vol 1141 ◽  
pp. 51-53
Author(s):  
Chetan Zankat ◽  
V.M. Pathak ◽  
Pratik Pataniya ◽  
G.K. Solanki ◽  
K.D. Patel ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Image Processing ◽  
Optical Properties ◽  
Room Temperature ◽  
Accurate Determination ◽  
Lattice Parameters ◽  
Processing Software ◽  
Image Processing Software

Amorphous SnSe thin films were deposited by thermal evaporation technique on glass substrates kept at room temperature in a vacuum better than 10-5Torr. A detailed study of structural and optical properties of 150 nm thin film was carried out. The selected area diffraction patterns obtained by TEM for this thin film were analyzed by a new method that involves accurate determination of lattice parameters by image processing software. The obtained results are in good agreement with the JCPDS data. Optical transmission spectra obtained at room temperature were analyzed to study optical properties of deposited thin films. It has been found that indirect carrier transition is responsible for optical absorption process in the deposited thin films.

p-Type Field Effect Transistor and UV-Photoconductive Characteristics of Na Doped ZnMgO Thin Films

2013 ◽  
Vol 668 ◽  
pp. 681-685
Author(s):  
Ya Xue ◽  
Hai Ping He ◽  
Zhi Zhen Ye
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Carrier Mobility ◽  
Room Temperature ◽  
Zno Films ◽  
Electrical Measurements ◽  
Acceptor Dopant ◽  
Znmgo Thin Film ◽  
Effect Transistor ◽  
P Type

In this study, the authors have presented results for fabricated ZnO based FET and the UV-photoconductive characteristics of Na doped ZnMgO thin films. The electrical measurements confirmed that the conductivity of the Na doped ZnMgO thin film is p-type, and the carrier mobility was estimated to be 2.3 cm2V-1S-1. Moreover, after exposed to the 365 nm ultraviolet light, the Na doped ZnMgO thin films still exhibited p-type behavior under gate voltage ranging from -5 to 2 V, and the Id increased a little while the carrier mobility did not change much. The photocurrent was measured under a bias of 6 V in air at room temperature. The films performed a higher current intensity after the illumination. The instantaneous rise of the photocurrent was completed when exposed to the 365 nm ultraviolet for 20 s, after switching the ultraviolet off the photocurrent decayed in a slower rate. The enhance rate of photocurrent was about 1.33 %. Conclusively, Na is a considerable acceptor dopant for making high quality p-type ZnO films, and the tiny change in the photocurrent of p-type Na doped ZnMgO thin film made it relatively stable when fabricating LEDs and other optoelectronic devices.

EPITAXIAL SrTiO3 BUFFER LAYERS FOR YBa2Cu3O7-δ SUPERCONDUCTING THIN FILMS ON MgO SUBSTRATE

2000 ◽  
Vol 14 (09) ◽  
pp. 1007-1016
Author(s):  
Z. MORI ◽  
T. NAKAGAMA ◽  
S. HIGO ◽  
T. DOI ◽  
S. KOBA ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Temperature ◽  
Smooth Surface ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Superconducting Thin Films ◽  
Ybco Thin Film ◽  
Superconducting Thin Film ◽  
Mgo Substrate

SrTiO 3 (STO) thin film was prepared on single crystal MgO (100) substrate by rf magnetron sputtering as a buffer layer of superconducting thin film. Sputtering conditions influence to the structural property were investigated. Highly epitaxial a-axis oriented STO thin film with extremely smooth surface was obtained by optimizing the sputtering parameters. YBa 2 Cu 3 O 7-δ (YBCO) thin film with critical temperature (T c ) of 89.8 K was obtained on STO buffer. Surface morphology of YBCO thin film was also improved. The effects of STO buffer were discussed in comparison with YBCO thin films on MgO substrate.

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