Enhanced properties of In2O3–ZnO thin films deposited on soda lime glass due to barrier layers of SiO2 and TiO2

Abstract Cu doped transparent ZnO thin films (CZO) were sputtered on soda lime glass substrates at three different distances between substrate and target. The effects of copper doping on the structural and optical properties were investigated by X-ray diffraction (XRD) and transmittance measurements. The XRD results indicated that CZO thin films have a preferential crystallographic orientation along the hexagonal wurtzite (002) axis. With increasing the distance between substrate-target, from 4 cm to 8 cm, the refractive index of the CZO films decreased. In the visible wavelength region, the average value of the transmittance was above 80%. Thus, significant changes in the structural and optical properties have occurred due to the decrease of the distance between the target-substrate and the residual compressive stress at the film-substrate interface arising during deposition.

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Influence of Oxygen Addition and Substrate Temperature on Textured Growth of Al-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering

MRS Proceedings ◽

10.1557/proc-721-j6.5 ◽

2002 ◽

Vol 721 ◽

Author(s):

P. Kuppusami ◽

K. Diesner ◽

I. Sieber ◽

K. Ellmer

Keyword(s):

Thin Films ◽

Substrate Temperature ◽

Oxygen Content ◽

Soda Lime ◽

Rf Magnetron Sputtering ◽

Zno Thin Films ◽

Soda Lime Glass ◽

Doped Zno ◽

Oxygen Addition ◽

Substrate Temperatures

AbstractSputtering of aluminium doped zinc oxide thin films from a ceramic ZnO:Al target requires a controlled addition of oxygen to the sputtering atmosphere in order to obtain films with low resistivity and high transparency. In this paper the influence of the oxygen addition and of the substrate temperature on the structural, morphological and electrical properties of ZnO:Al films is investigated. The oxygen addition leads to a minimum resistivity when the oxygen content during sputtering is 0.2%. This small amount of oxygen not only improves the transparency of the films, it also induces to a significant grain growth as revealed by scanning electron microscopy. A further increase of the oxygen content leads to highly resistive films, due to a complete oxidation of the dopant Al. As expected, higher substrate temperatures from about 373 to 673 K improve the of crystallinity and hence the resistivity. The lowest resistivity achieved was about 1.2.10-3 Ωcm. At still higher temperatures the resistivity increases which seems to be due to an outdiffusion of sodium into the ZnO:Al films from the soda lime glass, compensating part of the donors.

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Influence of Al, In codoping in enhancing the Figure of Merit of ZnO thin films for TCO Applications

MRS Advances ◽

10.1557/adv.2016.40 ◽

2016 ◽

Vol 1 (2) ◽

pp. 133-139 ◽

Cited By ~ 3

Author(s):

Vinoth Kumar Jayaraman ◽

Arturo Maldonado Alvarez ◽

Maria De la Luz Olvera Amador

Keyword(s):

Thin Films ◽

Zinc Acetate Dihydrate ◽

Ultrasonic Spray Pyrolysis ◽

Soda Lime ◽

Sem Analysis ◽

Zno Thin Films ◽

Soda Lime Glass ◽

Glass Substrates ◽

Ultrasonic Spray ◽

Different Temperatures

ABSTRACTAIZO (Al and In codoped ZnO) thin films were deposited on soda lime glass substrates by the ultrasonic spray pyrolysis (USP) technique. The spraying solution was prepared from zinc acetate dihydrate, aluminum acetyl acetonate and indium acetate. Depositions were carried out at three different temperatures, 425, 450 and 475 °C. Structural, morphological, optical and electrical properties were examined with respected to the deposition temperatures. All AIZO films grown with (002) preferential orientation confirmed from X-ray diffraction analysis. Hexagonal nanostructures were observed from Scanning electron microscopy (SEM) analysis. Minimum electrical resistivity of 2.52 x10-3 Ω-cm was achieved for AIZO films.

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Investigation of Structural and Optical Properties of ZnO Thin Films Grown on Different Substrates by Mist-CVD Enhanced with Ozone Gas Produced by Corona Discharge Plasma

Advances in Condensed Matter Physics ◽

10.1155/2021/1130829 ◽

2021 ◽

Vol 2021 ◽

pp. 1-8

Author(s):

Ece Kutlu-Narin ◽

Polat Narin ◽

Sefer Bora Lisesivdin ◽

Beyza Sarikavak-Lisesivdin

Keyword(s):

Thin Films ◽

Physical Properties ◽

Corona Discharge ◽

Discharge Plasma ◽

Soda Lime ◽

Zno Thin Films ◽

Zno Films ◽

Soda Lime Glass ◽

Surface Morphologies ◽

Corona Discharge Plasma

This study focuses on the growth and physical properties of ZnO thin films on different substrates grown by mist-CVD enhanced with ozone (O3) gas produced by corona discharge plasma using O2. Here, O3 is used to eliminate the defects related to oxygen in ZnO thin films. ZnO thin films are grown on amorphous soda-lime glass (SLG) and single crystals SiO2/Si (100) and c-plane Al2O3 substrates at 350°C of low growth temperature. All ZnO thin films show dominant (0002) diffraction peaks from X-ray diffraction (XRD). As expected, full width at half maximum (FWHM) of (0002) is decreasing in ZnO thin films on single-crystal substrates, especially c-Al2O3 due to similar crystal structure. It is found that the strain in the films is lowest in ZnO/c-Al2O3. The surface morphologies of the thin films are studied with atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurements. Grown ZnO films have a hexagonal and triangular nanostructure with different nanostructure sizes depending on the used substrate types. The calculated surface roughness is dramatically decreased in ZnO/c-Al2O3 compared to the other grown structures. The confocal Raman measurements show the E2(H) peak of ZnO thin films at 437 cm−1. It is suggested that O3 gas produced by corona discharge plasma using O2 can be useful to obtain better crystal quality and physical properties in ZnO thin films.

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Effect of barrier layers on the properties of indium tin oxide thin films on soda lime glass substrates

Thin Solid Films ◽

10.1016/j.tsf.2009.01.149 ◽

2009 ◽

Vol 517 (14) ◽

pp. 4074-4077 ◽

Cited By ~ 9

Author(s):

Jung-Min Lee ◽

Byung-Hyun Choi ◽

Mi-Jung Ji ◽

Yong-Tae An ◽

Jung-Ho Park ◽

...

Keyword(s):

Thin Films ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Soda Lime ◽

Soda Lime Glass ◽

Oxide Thin Films ◽

Barrier Layers ◽

Glass Substrates

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AFM Study of Surface Morphology of Aluminum Nitride Thin Films

MRS Proceedings ◽

10.1557/proc-388-399 ◽

1995 ◽

Vol 388 ◽

Cited By ~ 4

Author(s):

Yoshihisa Watanabe ◽

Yoshikazu Nakamura ◽

Shigekazu Hirayama ◽

Yuusaku Naota

Keyword(s):

Thin Films ◽

Surface Morphology ◽

Substrate Temperature ◽

Single Crystal ◽

Room Temperature ◽

Ion Beam ◽

Soda Lime ◽

Silicon Single Crystal ◽

Soda Lime Glass ◽

Average Roughness

AbstractAluminum nitride (AlN) thin films have been synthesized by ion-beam assisted deposition method. Film deposition has been performed on the substrates of silicon single crystal, soda-lime glass and alumin A. the influence of the substrate roughness on the film roughness is studied. the substrate temperature has been kept at room temperature and 473K and the kinetic energy of the incident nitrogen ion beam and the deposition rate have been fixed to 0.5 keV and 0.07 nm/s, respectively. the microstructure of the synthesized films has been examined by X-ray diffraction (XRD) and the surface morphology has been observed by atomic force microscopy(AFM). IN the XRD patterns of films synthesized at both room temperature and 473K, the diffraction line indicating the alN (10*0) can be discerned and the broad peak composed of two lines indicating the a1N (00*2) and a1N (10*1) planes is also observed. aFM observations for 100 nm films reveal that (1) the surface of the films synthesized on the silicon single crystal and soda-lime glass substrates is uniform and smooth on the nanometer scale, (2) the average roughness of the films synthesized on the alumina substrate is similar to that of the substrate, suggesting the evaluation of the average roughness of the film itself is difficult in the case of the rough substrate, and (3) the average roughness increases with increasing the substrate temperature.

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Origin of Mangetotransport Properties in APCVD Deposited Tin Oxide Thin Films

Materials ◽

10.3390/ma13225182 ◽

2020 ◽

Vol 13 (22) ◽

pp. 5182

Author(s):

Krunoslav Juraić ◽

Davor Gracin ◽

Matija Čulo ◽

Željko Rapljenović ◽

Jasper Rikkert Plaisier ◽

...

Keyword(s):

Thin Films ◽

Electrical Conductivity ◽

Tin Oxide ◽

Texture Coefficient ◽

Chemical Vapour ◽

Visible Spectrum ◽

Soda Lime ◽

Fine Tuning ◽

Soda Lime Glass ◽

Charge Carrier Density

Transparent conducting oxides (TCO) with high electrical conductivity and at the same time high transparency in the visible spectrum are an important class of materials widely used in many devices requiring a transparent contact such as light-emitting diodes, solar cells and display screens. Since the improvement of electrical conductivity usually leads to degradation of optical transparency, a fine-tuning sample preparation process and a better understanding of the correlation between structural and transport properties is necessary for optimizing the properties of TCO for use in such devices. Here we report a structural and magnetotransport study of tin oxide (SnO2), a well-known and commonly used TCO, prepared by a simple and relatively cheap Atmospheric Pressure Chemical Vapour Deposition (APCVD) method in the form of thin films deposited on soda-lime glass substrates. The thin films were deposited at two different temperatures (which were previously found to be close to optimum for our setup), 590 °C and 610 °C, and with (doped) or without (undoped) the addition of fluorine dopants. Scanning Electron Microscopy (SEM) and Grazing Incidence X-ray Diffraction (GIXRD) revealed the presence of inhomogeneity in the samples, on a bigger scale in form of grains (80–200 nm), and on a smaller scale in form of crystallites (10–25 nm). Charge carrier density and mobility extracted from DC resistivity and Hall effect measurements were in the ranges 1–3 × 1020 cm−3 and 10–20 cm2/Vs, which are typical values for SnO2 films, and show a negligible temperature dependence from room temperature down to −269 °C. Such behaviour is ascribed to grain boundary scattering, with the interior of the grains degenerately doped (i.e., the Fermi level is situated well above the conduction band minimum) and with negligible electrostatic barriers at the grain boundaries (due to high dopant concentration). The observed difference for factor 2 in mobility among the thin-film SnO2 samples most likely arises due to the difference in the preferred orientation of crystallites (texture coefficient).

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Characterization of MgO:Cd thin films grown by SILAR method

Canadian Journal of Physics ◽

10.1139/cjp-2017-0767 ◽

2018 ◽

Vol 96 (7) ◽

pp. 804-809 ◽

Cited By ~ 3

Author(s):

Harun Güney ◽

Demet İskenderoğlu

Keyword(s):

Thin Films ◽

Photoelectron Spectroscopy ◽

Soda Lime ◽

Morphological Properties ◽

Emission Region ◽

Soda Lime Glass ◽

Silar Method ◽

Soda Lime Glass Substrate ◽

X Ray ◽

Cd Doping

The undoped and 1%, 2%, and 3% Cd-doped MgO nanostructures were grown by SILAR method on the soda lime glass substrate. X-ray diffractometer (XRD), ultraviolet–visible spectrometer, scanning electron microscope, photoluminescence (PL), and X-ray photoelectron spectroscopy measurements were taken to investigate Cd doping effects on the structural, optical, and morphological properties of MgO nanostructures. XRD measurements show that the samples have cubic structure and planes of (200), (220) of MgO and (111), (200), and (220) of CdO. It was observed that band gaps increase with rising Cd doping rate in MgO thin film. The surface morphology of samples demonstrates that MgO nanostructures have been affected by the Cd doping. PL measurements show that undoped and Cd-doped MgO thin films can radiate in the visible emission region.

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Optical and Electrical Analyses of Thallium Sulphide Thin Films

Jordan Journal of Physics ◽

10.47011/14.3.7 ◽

2021 ◽

Vol 14 (3) ◽

pp. 249-253

Keyword(s):

Thin Films ◽

Solar Cells ◽

Soda Lime ◽

High Energy ◽

Window Layer ◽

Soda Lime Glass ◽

Energy Band Gap ◽

Thallium Chloride ◽

Light Region ◽

Silicon And Germanium

Abstract: In this paper, suitability of thallium sulphide films were investigated as an alternative to conventional silicon and germanium that were used as window layers in solar cells. Thin films were deposited on soda lime glass (SLG) substrates in a chemical bath containing Thallium Chloride (TlCl2) and Thiourea (NH2)2CS which was conditioned at 80 ºC for about 5 hours to deposit the films. Effects of annealing on the film samples at 300 ºC and 350 ºC were studied respectively by use of UV-VIS Avantes electrophotometer and Four-Point-Probe (FPP) machine in the light region with wavelength range from 200 nm to 1000 nm. The results obtained suggest that the thin films obtained are good materials for optoelectronics. The absorption spectra exhibited a relatively high energy band-gap. Materials of this nature are good for window layers which serve as passage to the absorber layer where needed charge carriers are produced. Keywords: Thin film, Thallium Sulphide, Window layer, Optoelectronics, Solar cells.

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