scholarly journals Characterization of TiZrN and TaZrN Nanocomposite Multilayer Coating Deposited via RF/DC Magnetron Sputtering on AISI4140 Steel

2021 ◽  
Vol 2021 ◽  
pp. 1-10
Author(s):  
R. Hariharan ◽  
R. Raja ◽  
R. J. Golden Renjith Nimal ◽  
Mohamad Reda A. Refaai ◽  
S Ravi ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Physical Vapor Deposition ◽  
Research Work ◽  
Multilayer Coating ◽  
Flow Rate Ratio ◽  
Dc Magnetron Sputtering ◽  
Average Roughness ◽  
Structure Surface

In this present research work, TiZrN and TaZrN multilayer coating was deposited on 4140 steel by RF/DC magnetron sputtering for comparative work also prepared in single layer. The flow rate ratio of Ar/N2 was set to 15 : 3 sccm and the thin film was prepared by the PVD (physical vapor deposition) method by RF/DC magnetron using a Ti-Zr and Ta-Zr target with a purity of 99.99%. The crystal structure, surface morphology microstructure, and component arrangements were explored by X-ray diffraction (XRD), scanning electron microscope (SEM), and atomic force microscopy (AFM). It has been found that the crystal structure, surface morphology, microstructure, and elemental composition of the membrane are strongly dependent on deposition parameters. It is mechanically characterized by corrosion and Vickers hardness. In AFM measurements, coarse cluster particles with increasing Ti and Ta values not only increase the average roughness (Ra) by 2.341 nm (200°C) and 2.951 nm (400°C) but also have a continuous average thickness which was shown to increase by 1.504 nm and 781.75 nm. With the increase of hardness, the roughness decreases correspondingly. The TiZrN multilayer microhardness augmented to 314 GPa at 200°C and 371 GPa for TaZrN (400°C).

scholarly journals Effect of Deposition Pressure on the Microstructure and Optical Band Gap of Molybdenum Disulfide Films Prepared by Magnetron Sputtering

Coatings ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 570 ◽  
Author(s):  
Gong ◽  
Xiao ◽  
Zhu ◽  
Wang ◽  
Ma
Keyword(s):  
Crystal Structure ◽  
Grain Size ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Optical Band Gap ◽  
Exciton Energy ◽  
Deposition Pressure ◽  
Electronegativity Difference ◽  
Structure Surface

MoS2 films were prepared via magnetron sputtering under different deposition pressures, and the effects of deposition pressure on the crystal structure, surface morphology, and optical properties of the resulting films were investigated. The results show that the crystallinity of the films first increases and then decreases with increasing pressure. The surface of the films prepared by magnetron sputtering is dense and uniform with few defects. The deposition pressure affects the grain size, surface morphology, and optical band gap of the films. The films deposited at a deposition pressure of 1 Pa revealed remarkable crystallinity, a 30.35 nm grain size, and a 1.67 eV optical band gap. Given the large electronegativity difference between MoS2 molecules and weak van der Waals forces between layers, the MoS2 films are prone to defects at different deposition pressures, causing the exciton energy near defects to decrease and the modulation of the surrounding band.

Crystal structure and surface morphology of magnetron sputtering deposited hexagonal and perovskite-like YbMnO3 thin films

2014 ◽  
Vol 586 ◽  
pp. S343-S347 ◽  
Author(s):  
N.V. Andreev ◽  
T.A. Sviridova ◽  
V.I. Chichkov ◽  
A.P. Volodin ◽  
C. Van Haesendonck ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Surface Morphology ◽  
Magnetron Sputtering

The Optimization of TiN Film Deposited by DC Magnetron Sputtering Provided for Al Diffusion Barrier

2010 ◽  
Vol 93-94 ◽  
pp. 578-582
Author(s):  
A. Pankiew ◽  
Win Bunjongpru ◽  
N. Somwang ◽  
S. Porntheeraphat ◽  
Sirapat Pratontep ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Flow Rate ◽  
Diffusion Barrier ◽  
Rate Ratio ◽  
Growth Conditions ◽  
Flow Rate Ratio ◽  
Dc Magnetron Sputtering ◽  
Tin Films ◽  
Tin Film

Titanium nitride (TiN) film has been widely used as a diffusion barrier layer for VLSI contact metallization because TiN is an excellent barrier against inter-diffusion between Al and Si substrate or silicide. In this work, we studied the properties of TiN films deposited by DC magnetron sputtering with varying N2:Ar flow rate ratio in order to optimize growth conditions and film properties provided for Al diffusion barrier purpose. The TiN films were deposited at the constant pressure level and sputtering time. The crystalline orientation, composition and electrical properties of deposited TiN films were characterized by XRD, AES-depth profile and Four Point Probe measurement, respectively. The XRD results show that the deposited TiN film has two preferred orientations of TiN(111) and TiN(200) planes. The highest intensity of the TiN(111) plane was obtained when the N2:Ar flow rate ratio was 3:1. The electrical resistivity was increased when the N2:Ar flow rate ratio was decreased. The minimum electrical resistivity is 127.8 μΩ-cm when the N2:Ar flow rate ratio is 3:1.

Searching for the Influence of the Sapphire Nitridation Conditions on GaN Films Grown by Cyclic PLD

2002 ◽  
Vol 743 ◽  
Author(s):  
P. Sanguino ◽  
M. Niehus ◽  
S. Koynov ◽  
L. Melo ◽  
R. Schwarz ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Surface Morphology ◽  
Pulsed Laser ◽  
Nitrogen Plasma ◽  
Optical Quality ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Sapphire Substrates ◽  
Structure Surface ◽  
Excitonic Luminescence

AbstractWe have deposited highly c-axis oriented GaN films on sapphire by the Cyclic Pulsed Laser Deposition Technique. Nitridation of the sapphire substrates for these samples was performed at 200 °C, 400 °C and 600 °C. For that purposed, we used a radio frequency nitrogen plasma during four hours. The films were compared in terms of crystal structure, surface morphology and optical quality. Although small, the biggest differences were detected in the surface morphology of the films. Additionally, a typical GaN sample nitridated at 200 °C was analysed by photoluminescence and showed the typical donor bound excitonic luminescence (D0X ) transition at 3.47 eV and a line near 3.42 eV. These lines show a FWHM of 20 meV and 30 meV at 13K, respectively.

THE INFLUENCE OF SPUTTERING BIAS-VOLTAGE ON LaB6 FILM'S CHARACTERISTICS

2009 ◽  
Vol 23 (08) ◽  
pp. 1077-1083 ◽  
Author(s):  
JING XU ◽  
GUANGHUI MIN ◽  
XIAOHUA ZHAO ◽  
LIJIE HU ◽  
HUASHUN YU
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Diffraction Peak ◽  
Dc Magnetron Sputtering ◽  
Crystal Face ◽  
Deposited Films ◽  
Stylus Profiler ◽  
Lanthanum Boride

The deposition of lanthanum boride ( LaB 6) thin films by the DC magnetron sputtering were studied. XRD, AFM and Stylus Profiler were used to characterize the properties of the deposited films. The XRD was used to study the crystallinity. The results of the XRD showed that the dominant crystal face is the (100) face. The crystallinity decreased with the increased bias-voltage value, but the influence of bias-voltage on the films is different on different crystal faces. The intensity (100) face was influenced by the bias-voltage more obviously than other faces except the influence of thickness. The diffraction peak maximal intensity of the (100) face changed from 1256 (on 0 V) to 580 (on -150 V), but the intensity of (110) face changed from 614 (on 0 V) to 486 (on -150 V). The rel. int (100%) of the (110) face changed from 38.70 to 74.52. The deposition rate decreased with the increased bias-voltage value, but the decrease was not obvious. The maximum and minimum of the deposition ratio were 17.53 nm and 13.75 nm respectively. Surface morphology of the films was studied by the AFM. The crystallite of the films was less than 50 nm. The maximal roughness of the films decreased first and increased afterward, and the maximum was obtained on the -50 V bias-voltage.

Deposition And Characterization of CNx Films

1994 ◽  
Vol 339 ◽  
Author(s):  
X. T. Cui ◽  
Z. H. Zhang ◽  
Q. Y. Chen ◽  
F. Romero-Borja ◽  
J. R. Liu ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Ir Spectroscopy ◽  
Magnetron Sputtering ◽  
Annealing Effect ◽  
Single Bond ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Bonding Properties

ABSTRACTCNx films with x around 1.0 have been made by inverted cylindrical DC magnetron sputtering. RBS, XPS, IR spectroscopy, ERD and SEM were used to characterize the composition and bonding properties of the films, while X-ray diffraction was used for crystal structure determination. XPS data indicated the existence of the tetrahedral C3N4 phase in the CNx films, which was consistent with the C-N single bond suggested by IR spectra. The annealing effect on CNx films will also be discussed.

Electrical and Thermal Properties of Platinum Thin Films Prepared by DC Magnetron Sputtering for Micro-Heater of Microsensor Applications after CMP Process

2007 ◽  
Vol 124-126 ◽  
pp. 267-270 ◽  
Author(s):  
Nam Hoon Kim ◽  
Dong Myong Na ◽  
Pil Ju Ko ◽  
Jin Seong Park ◽  
Woo Sun Lee
Keyword(s):  
Thin Films ◽  
Thermal Properties ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Power Consumption ◽  
Chemical Mechanical Polishing ◽  
Thermal Characteristics ◽  
Remarkable Difference ◽  
Dc Magnetron Sputtering ◽  
Sensor Applications

Chemical mechanical polishing (CMP) of platinum thin films was performed for the improvement of surface morphology. Platinum thin films after CMP process with alumina slurry showed the increase of surface morphology without a remarkable difference of the thermal characteristics of as-annealed platinum thin films. The power consumption of platinum thin films micro-heater also became very low by improvement of surface morphology after CMP process. The similar or improved electrical and thermal characteristics of platinum thin films for micro-heater of sensor applications as well as evaluation possibility of sensing property by the improved surface morphology were obtained after CMP process.

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