Effect of Deposition Pressure on the Microstructure and Optical Band Gap of Molybdenum Disulfide Films Prepared by Magnetron Sputtering

MoS2 films were prepared via magnetron sputtering under different deposition pressures, and the effects of deposition pressure on the crystal structure, surface morphology, and optical properties of the resulting films were investigated. The results show that the crystallinity of the films first increases and then decreases with increasing pressure. The surface of the films prepared by magnetron sputtering is dense and uniform with few defects. The deposition pressure affects the grain size, surface morphology, and optical band gap of the films. The films deposited at a deposition pressure of 1 Pa revealed remarkable crystallinity, a 30.35 nm grain size, and a 1.67 eV optical band gap. Given the large electronegativity difference between MoS2 molecules and weak van der Waals forces between layers, the MoS2 films are prone to defects at different deposition pressures, causing the exciton energy near defects to decrease and the modulation of the surrounding band.

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Characterization of TiZrN and TaZrN Nanocomposite Multilayer Coating Deposited via RF/DC Magnetron Sputtering on AISI4140 Steel

Advances in Materials Science and Engineering ◽

10.1155/2021/8273708 ◽

2021 ◽

Vol 2021 ◽

pp. 1-10

Author(s):

R. Hariharan ◽

R. Raja ◽

R. J. Golden Renjith Nimal ◽

Mohamad Reda A. Refaai ◽

S Ravi ◽

...

Keyword(s):

Crystal Structure ◽

Surface Morphology ◽

Magnetron Sputtering ◽

Physical Vapor Deposition ◽

Research Work ◽

Multilayer Coating ◽

Flow Rate Ratio ◽

Dc Magnetron Sputtering ◽

Average Roughness ◽

Structure Surface

In this present research work, TiZrN and TaZrN multilayer coating was deposited on 4140 steel by RF/DC magnetron sputtering for comparative work also prepared in single layer. The flow rate ratio of Ar/N2 was set to 15 : 3 sccm and the thin film was prepared by the PVD (physical vapor deposition) method by RF/DC magnetron using a Ti-Zr and Ta-Zr target with a purity of 99.99%. The crystal structure, surface morphology microstructure, and component arrangements were explored by X-ray diffraction (XRD), scanning electron microscope (SEM), and atomic force microscopy (AFM). It has been found that the crystal structure, surface morphology, microstructure, and elemental composition of the membrane are strongly dependent on deposition parameters. It is mechanically characterized by corrosion and Vickers hardness. In AFM measurements, coarse cluster particles with increasing Ti and Ta values not only increase the average roughness (Ra) by 2.341 nm (200°C) and 2.951 nm (400°C) but also have a continuous average thickness which was shown to increase by 1.504 nm and 781.75 nm. With the increase of hardness, the roughness decreases correspondingly. The TiZrN multilayer microhardness augmented to 314 GPa at 200°C and 371 GPa for TaZrN (400°C).

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Properties of Annealed Indium Tin Tantalum Oxide Films Prepared by Reactive Magnetron Sputtering

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.422.70 ◽

2013 ◽

Vol 422 ◽

pp. 70-74

Author(s):

Bo Zhang

Keyword(s):

Grain Size ◽

Magnetron Sputtering ◽

Band Gap ◽

Carrier Concentration ◽

Room Temperature ◽

Optical Band Gap ◽

Tantalum Oxide ◽

Annealing Treatment ◽

Glass Substrates ◽

Near Ir

ndium tin oxide (ITO) and indium tin tantalum oxide (ITTO) films were deposited on glass substrates at room temperature by magnetron sputtering. Properties of the ITO and ITTO films showed a dependence on annealing treatment. ITTO film deposited at room temperature showed the enhancement in (400) orientation and the increasing in grain size. With an increase in annealing temperature, the intensity of XRD peak increased and the grain size showed an evident increasing. The reflection edge in near-IR range and the absorption edge in near-UV range shifted due to the variation in carrier concentration. Ta-doping improved the carrier concentration of the films and widened the corresponding optical band gap. The variations in optical band gap were due to Burstein-Moss effect. The higher value of figure of merit of ITTO films was observed. The tantalum-doped ITO films could find extensive application in some devices.

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Effects of Sputtering Pressure on Cu3N Thin Films by Reactive Radio Frequency Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1105.74 ◽

2015 ◽

Vol 1105 ◽

pp. 74-77 ◽

Cited By ~ 1

Author(s):

Xiao Lin Ji ◽

Hai Dong Ju ◽

Tao Yu Zou ◽

Jin Long Luo ◽

Kun Quan Hong ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Surface Morphology ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Band Gap ◽

Optical Band Gap ◽

Radio Frequency Magnetron ◽

Radio Frequency Magnetron Sputtering ◽

Sputtering Pressure

Copper nitride thin films were prepared by reactive radio frequency magnetron sputtering at different sputtering pressures with fixed nitrogen to argon ratio. The influences of sputtering pressure on the structure, optical band gap, and surface morphology of films were investigated. The results show that the preferential orientation of polycrystalline Cu3N thin films changes from [111] to [100] when the sputtering pressure increases. Meanwhile, the optical band gap (Eg) of Cu3N thin films increases with the sputtering pressure. The surface morphology of Cu3N thin film deposited at high sputtering pressure becomes smoother than that of Cu3N thin film deposited at low sputtering pressure.

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Effect of annealing and composition on crystal structure, surface morphology and optical absorption of chemically deposited Cd1-xSnxS films

Crystal Research and Technology ◽

10.1002/crat.201000030 ◽

2010 ◽

Vol 45 (7) ◽

pp. 725-731 ◽

Cited By ~ 6

Author(s):

R. Das ◽

R. Kumar

Keyword(s):

Crystal Structure ◽

Optical Absorption ◽

Surface Morphology ◽

Structure Surface

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Research on Nanocrystalline Silicon Film Solar Cells

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.347-353.870 ◽

2011 ◽

Vol 347-353 ◽

pp. 870-873

Author(s):

Chun Rong Xue

Keyword(s):

Grain Size ◽

Solar Cells ◽

Band Gap ◽

Optical Band Gap ◽

Volume Fraction ◽

Silicon Film ◽

Nanocrystalline Silicon ◽

Processing Parameters ◽

Crystalline Volume Fraction ◽

Hydrogen Dilution

Nanocrystalline silicon film has become the research hit of today’ s P-V solar technology. It’s optical band gap was controlled through changing the grain size and crystalline volume fraction for the quanta dimension effect. The crystalline volume fraction in nc-Si:H is modulated by varying the hydrogen concentration in the silane plasma. Also, the crystallinity of the material increases with increasing hydrogen dilution ratio, the band tail energy width of the nc-Si:H concurrently decreases. Two sets of nc-Si:H solar cells were made with different layer thicknesss, their electronic and photonic bandgap, absorption coefficient, optical band gap, nanocrystalline grain size(D), and etc have been stuied. In addition, we discussed the relationship between the stress of nc-Si thin films and H2 ratio. At last nc-Si:H solar cells have been designed and prepared successfully in the optimized processing parameters.

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Effects of Continuous and Discontinuous Deposition Time in Reactive Direct Current Magnetron Sputtering of Titanium Dioxide Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1131.251 ◽

2015 ◽

Vol 1131 ◽

pp. 251-254

Author(s):

Montri Aiempanakit ◽

Chantana Salawan ◽

Kamon Aiempanakit

Keyword(s):

Thin Films ◽

Grain Size ◽

Surface Morphology ◽

Magnetron Sputtering ◽

Direct Current ◽

Deposition Time ◽

Spherical Shape ◽

Contact Angles ◽

Water Contact ◽

Direct Current Magnetron Sputtering

The effect of continuous and discontinuous deposition time on the properties of TiO2 thin films deposited by reactive direct current magnetron sputtering (DCMS) on glass substrates was investigated. The deposition processes were designed for a condition of continuous deposition time D1 (60 min) and three conditions of discontinuous deposition time D2 (30 min × 2 times), D3 (15 min × 4 times), and D4 (1 min × 60 times). The crystal structure, surface morphology, and hydrophilicity of TiO2 thin films were characterized by X-ray diffraction, atomic force microscope, and water contact angle method, respectively. It was found that the increasing of discontinuous deposition time (conditions from D1 to D4) shows the changing of grain size from big grain size with spherical shape to small grain size with oval shape. The crystallinity of TiO2 films decrease with increasing the discontinuous deposition time. The water contact angles also decrease as a function of increasing discontinuous deposition time. These results may be explained from the accumulation of heat on the substrate which affected the phase composition and surface morphology of TiO2 thin films.

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Studies on the Optical Properties and Surface Morphology of Nickel Phthalocyanine Thin Films

E-Journal of Chemistry ◽

10.1155/2007/643834 ◽

2007 ◽

Vol 4 (2) ◽

pp. 255-264 ◽

Cited By ~ 5

Author(s):

Benny Joseph ◽

C. S. Menon

Keyword(s):

Thin Films ◽

Surface Morphology ◽

Band Gap ◽

Electron Micrographs ◽

Optical Band Gap ◽

Scanning Electron Micrographs ◽

Nickel Phthalocyanine ◽

Glass Substrates ◽

Substrate Temperatures ◽

Scanning Electron

Thin films of Nickel Phthalocyanine (NiPc) are fabricated at a base pressure of 10-5m.bar using Hind-Hivac thermal evaporation plant. The films are deposited on to glass substrates at various temperatures 318, 363, 408 and 458K. The optical absorption spectra of these thin films are measured. Present studies reveal that the optical band gap energies of NiPc thin films are highly dependent on the substrate temperatures. The structure and surface morphology of the films deposited on glass substrates of temperatures 303, 363 and 458K are studied using X-ray diffractograms and Scanning Electron Micrographs (SEM), show that there is a change in the crystallinity and surface morphology due to change in the substrate temperatures. Full width at half maximum (FWHM) intensity of the diffraction peaks is also found reduced with increasing substrate temperatures. Scanning electron micrographs show that these crystals are fiber like at high substrate temperatures. The optical band gap increases with increase in substrate temperature and is then reduced with fiber-like grains at 408K. The band gap increases again at 458K with full of fiber like grains. Trap energy levels are also observed for these films.

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