Simulation for Large-Area, Inductively-Coupled Plasma Systems Using an Ar/Cl2 Gas Mixture

2015 ◽  
Vol 15 (11) ◽  
pp. 8557-8565
Author(s):  
Seon-Geun Oh ◽  
Young-Jun Lee ◽  
Jae-Hong Jeon ◽  
Young-Jin Kim ◽  
Jong-Hyun Seo ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Gas Mixture ◽  
Large Area ◽  
Inductively Coupled

Low Inductance Antenna (LIA) plasma source and plasma-enhanced dual rotatable magnetron sputter assisted with LIA

2015 ◽  
Vol 2015 (1) ◽  
pp. 000757-000760
Author(s):  
Y. Takaya ◽  
Y. Tanioka ◽  
H. Yoshino ◽  
A. Osawa
Keyword(s):  
Inductively Coupled Plasma ◽  
Low Voltage ◽  
Polymer Surface ◽  
Plasma Source ◽  
Large Area ◽  
Plasma Damage ◽  
Inductively Coupled ◽  
Temperature Deposition ◽  
Magnetron Sputter ◽  
Plasma Profile

In recent years, both low plasma damage and low temperature deposition technic for polymer substrates (e.g. PCB, films and etc.) are often required. We have developed a plasma enhanced dual rotatable magnetron sputter source assisted with inductively coupled plasma (ICP) using low inductance antenna (LIA). LIA has same unique characteristics, a)low voltage high density plasma, b)well controllability of plasma profile to ensure uniformity over large area, c)ionization of sputtered particle and etc. when in being used as a plasma assistant, and besides, LIA can be used as a ICP source for polymer surface modification. We introduce a variety of the possibilities of whether this sputter source is usable for the process of the fabrication of PCB.

Zirconia Coatings Deposited by Inductively Coupled Plasma Assisted CVD

1998 ◽  
Vol 555 ◽  
Author(s):  
P. Colpo ◽  
G. Ceccone ◽  
B. Leclercq ◽  
P. Salvatore ◽  
F. Rossi
Keyword(s):  
Thin Films ◽  
Bias Voltage ◽  
Inductively Coupled Plasma ◽  
Gas Mixture ◽  
Negative Bias ◽  
Negative Bias Voltage ◽  
Inductively Coupled ◽  
Deposition Parameters ◽  
Coating Characteristics ◽  
Dc Bias

AbstractThin films of zirconia have been deposited by an Inductively Coupled Plasma Assisted CVD (ICP-PACVD) reactor from tetra (tert-butoxy)-zircon precursor diluted in Ar and O2 gas mixture. An independent RF generator is used to control carefully the substrate negative bias voltage during the deposition. Zirconia thin films, with thickness up to 10 microns were deposited on Si (100) polished wafers under different plasma conditions. Correlation between deposition parameters, and microstructure has been established showing that the ion bombardment has a large influence on the coating characteristics. In particular, the possibility of tailoring mechanical properties of the films by controlling the applied DC bias voltage is discussed.

Large-area ion source combining microwaves with inductively coupled plasma

2000 ◽  
Vol 71 (2) ◽  
pp. 716-718 ◽  
Author(s):  
S. Okuji ◽  
N. Sakudo ◽  
K. Hayashi ◽  
M. Okada ◽  
T. Onogawa ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Ion Source ◽  
Large Area ◽  
Inductively Coupled

An array of inductively coupled plasma sources for large area plasma

1999 ◽  
Vol 355-356 ◽  
pp. 252-255 ◽  
Author(s):  
Se-Geun Park ◽  
Chul Kim ◽  
Beom-hoan O
Keyword(s):  
Inductively Coupled Plasma ◽  
Large Area ◽  
Plasma Sources ◽  
Inductively Coupled

High growth rate diamond synthesis in a large area atmospheric pressure inductively coupled plasma

1990 ◽  
Vol 5 (11) ◽  
pp. 2326-2333 ◽  
Author(s):  
M. A. Cappelli ◽  
T. G. Owano ◽  
C. H. Kruger
Keyword(s):  
Growth Rates ◽  
Atmospheric Pressure ◽  
Atomic Hydrogen ◽  
Inductively Coupled Plasma ◽  
High Growth ◽  
High Growth Rate ◽  
Diamond Synthesis ◽  
Large Area ◽  
Inductively Coupled ◽  
Hydrogen Flux

A study of diamond synthesis in an atmospheric pressure inductively coupled argon-hydrogen-methane plasma is presented. The plasma generated has an active area of 20 cm2 and a free stream temperature of approximately 5000 K. Deposition experiments lasting 1 h in duration have been performed in both stagnation flow and flat plate parallel flow geometries. The diamond film deposited in both configurations are nonuniform yet fairly reproducible. The variation in the growth rates at various regions of the substrate is attributed to the variation in the surface atomic hydrogen flux. Growth rates are as high as 50 μm/h, in regions of the substrate where the atomic hydrogen flux is expected to be large. Little or no growth is observed in regions where the atomic hydrogen is expected to recombine within the thermal boundary layer before arriving at the surface. Individual particles are analyzed by micro-Raman spectroscopy. Large (50 μm) size well-faceted particles show little evidence of non-diamond carbon content and are found to be under a state of compression, displaying shifts in the principal phonon mode as great as 3 cm−1.

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