Etch characteristics of nanoscale ultra low-k dielectric using C3H2F6

Next generation semiconductor devices require ultra low dielectric constant (ULK) materials such as porous SiCOH on the back end of line structure for lower resistance and capacitance (RC) time delay, however, these ULK materials are easily damaged by the exposure to plasmas during the etching. In this study, etch characteristics of nanoscale TiN masked porous SiCOH such as etch rate, etch profile, surface damage, etc. and plasma characteristics by using C3H2F6 based gases have been investigated with a dual-frequency capacitively coupled plasma system (DF-CCP) and the results were compared with those by using conventional C4F8 based gases used for low-k dielectric etching. The results showed that, for the similar etch rates and etch profiles of porous SiCOH, lower sidewall damage was observed for the etching with the C3H2F6 compared to the C4F8. The analysis showed that it was related to less UV (less than 400 nm) emission and less fluorine radicals in the plasma for C3 H2F6 compared to C4F8, which leads to less fluorine diffusion to the sidewall surface of the etched porous SiCOH by the fluorine scavenging by hydrogen in C3H2F6.

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Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

MRS Proceedings ◽

10.1557/proc-565-255 ◽

1999 ◽

Vol 565 ◽

Author(s):

Y. Shimogaki ◽

S. W. Lim ◽

E. G. Loh ◽

Y. Nakano ◽

K. Tada ◽

...

Keyword(s):

Growth Rate ◽

Dielectric Constant ◽

Gas Flow ◽

Structural Changes ◽

Silicon Oxide ◽

Reactive Species ◽

Low Dielectric Constant ◽

Low Dielectric ◽

Step Coverage ◽

Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

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The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

MRS Proceedings ◽

10.1557/proc-766-e8.10 ◽

2003 ◽

Vol 766 ◽

Cited By ~ 7

Author(s):

Jin-Heong Yim ◽

Jung-Bae Kim ◽

Hyun-Dam Jeong ◽

Yi-Yeoul Lyu ◽

Sang Kook Mah ◽

...

Keyword(s):

Thin Film ◽

Mechanical Properties ◽

Dielectric Constant ◽

Pore Structure ◽

Pore Diameter ◽

Dielectric Films ◽

Low Dielectric Constant ◽

Cyclodextrin Derivatives ◽

Low Dielectric ◽

Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

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Effect of low-frequency power on etching of SiCOH low-k films in CHF3 13.56MHz/2MHz dual-frequency capacitively coupled plasma

Microelectronic Engineering ◽

10.1016/j.mee.2008.12.037 ◽

2009 ◽

Vol 86 (3) ◽

pp. 421-424 ◽

Cited By ~ 11

Author(s):

Chao Ye ◽

Yijun Xu ◽

Xiaojiang Huang ◽

Zhenyu Xing ◽

Jing Yuan ◽

...

Keyword(s):

Low Frequency ◽

Dual Frequency ◽

Capacitively Coupled ◽

Capacitively Coupled Plasma ◽

Low Frequency Power ◽

Low K ◽

Frequency Power

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Electrical and Reliability Characteristics of Self-Forming Barrier for CuNd/SiOCH Films in Cu Interconnects

Coatings ◽

10.3390/coatings10020155 ◽

2020 ◽

Vol 10 (2) ◽

pp. 155

Author(s):

Yi-Lung Cheng ◽

Chih-Yen Lee ◽

Wei-Fan Peng ◽

Giin-Shan Chen ◽

Jau-Shiung Fang

Keyword(s):

Dielectric Film ◽

Alloy Film ◽

Dielectric Films ◽

Low Dielectric Constant ◽

Electrical Characteristics ◽

Sputtering Deposition ◽

Cu Interconnects ◽

Low Dielectric ◽

Reliability Characteristics ◽

Low K

In this study, Cu-2.2 at. % Nd alloy films using a co-sputtering deposition method were directly deposited onto porous low-dielectric-constant (low-k) films (SiOCH). The effects of CuNd alloy film on the electrical properties and reliability of porous low-k dielectric films were studied. The electrical characteristics and reliability of the porous low-k dielectric film with CuNd alloy film were enhanced by annealing at 425 °C. The formation of self-forming barrier at the CuNd/SiOCH interface was responsible for this improvement. Therefore, integration with CuNd and porous low-k dielectric is a promising process for advanced Cu interconnects.

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Robust spin-on-glass poly(methyl)silsesquioxane-based low-k materials derived from a cyclic siloxane precursor

RSC Advances ◽

10.1039/c5ra11110b ◽

2015 ◽

Vol 5 (82) ◽

pp. 66511-66517 ◽

Cited By ~ 6

Author(s):

Albert S. Lee ◽

Sung Yeoun Oh ◽

Seung-Sock Choi ◽

He Seung Lee ◽

Seung Sang Hwang ◽

...

Keyword(s):

Mechanical Properties ◽

Dielectric Constant ◽

Low Dielectric Constant ◽

Cyclic Siloxane ◽

Low Dielectric ◽

Methyl Silsesquioxane ◽

Low K

Low dielectric constant poly(methyl)silsesquioxane spin-on-glass resins incorporating a cyclic precursor exhibited exceptional mechanical properties to withstand CMP processes.

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Sealing of low-k dielectric (k=2.0) with self-assembled monolayers (SAMs) for the atomic layer deposition (ALD) of TiN

MRS Proceedings ◽

10.1557/opl.2013.716 ◽

2013 ◽

Vol 1559 ◽

Cited By ~ 2

Author(s):

Yiting Sun ◽

Elisabeth Levrau ◽

Michiel Blauw ◽

Johan Meersschaut ◽

Patrick Verdonck ◽

...

Keyword(s):

Atomic Layer ◽

Self Assembled Monolayers ◽

Low Dielectric Constant ◽

Hydroxyl Groups ◽

Low Dielectric ◽

Tin Film ◽

Layer Deposition ◽

Pore Sealing ◽

Assembled Monolayers ◽

Low K

ABSTRACTIn this work, a novel low dielectric constant (low-k) pore sealing approach was engineered by depositing firstly a sub-2 nm SAMs and then a 3 nm TiN barrier film. The low-k film was pretreated by plasma to introduce hydroxyl groups onto the surface, followed by SAMs deposition. Then a TiN film was deposited from tetrakis(dimethylamino)titanium (TDMAT) via ALD as a dielectric barrier. Penetration of Ti atoms into low-k was measured and used to evaluate the sealing ability of SAMs. For the samples covered with SAMs, around 90% reduction of Ti atoms penetration was achieved. The pore radius was reduced to below 0.5 nm after the barrier deposition. The ∆k after pretreatment and after SAMs are 0.1 and 0.16, respectively.

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Chemical-Mechanical Planarization of Low-k Polymers for Advanced IC Structures

Journal of Electronic Packaging ◽

10.1115/1.1510138 ◽

2002 ◽

Vol 124 (4) ◽

pp. 362-366 ◽

Cited By ~ 8

Author(s):

Christopher L. Borst ◽

Dipto G. Thakurta ◽

William N. Gill ◽

Ronald J. Gutmann

Keyword(s):

Dielectric Constant ◽

Surface Chemistry ◽

Chemical Mechanical Planarization ◽

Low Dielectric Constant ◽

Chemical Company ◽

Low Dielectric ◽

Scale Models ◽

Physically Based ◽

Thickness Measurements ◽

Low K

Successful integration of copper and low dielectric constant (low-k) materials is dependent on robust chemical-mechanical planarization (CMP) during damascene patterning. This process includes the direct removal of copper and interaction of the copper slurry with the underlying dielectric. Experiments were designed and performed to examine the CMP of two low-k polymers from Dow Chemical Company, bis-benzocyclobutene (BCB*, k=2.65) and “silicon-application low-k material” (SiLK* resin, k=2.65) with both acidic slurries suitable for copper damascene patterning and a KH phthalate-based model slurry developed for SiLK. Blanket polymer films were polished in order to determine the interactions that occur when copper and liner materials are removed by the damascene CMP process. Removal rates were obtained from material thickness measurements, post-CMP surface topography from AFM scans, and post-CMP surface chemistry from XPS measurements. Physically based wafer-scale models are presented which are compatible with the experimental results.

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A novel low k thin film based on plasma-polymerized 1- cyano isoquinoline

e-Polymers ◽

10.1515/epoly.2007.7.1.816 ◽

2007 ◽

Vol 7 (1) ◽

Author(s):

Zhao Xiong-Yan ◽

Wang Ming-Zhu ◽

Wang Zhi

Keyword(s):

Thin Film ◽

Photoelectron Spectroscopy ◽

Film Formation ◽

Ring Structure ◽

Discharge Power ◽

Low Dielectric Constant ◽

X Ray ◽

Low Dielectric ◽

First Time ◽

Low K

AbstractA novel low dielectric constant polymer, plasma-polymerized 1-cyano isoquinoline (PPCIQ) was prepared by plasma polymerization for the first time. The structure and surface compositions of the deposited PPCIQ thin films were investigated by Fourier transform infrared (FTIR) and X-ray photoelectron spectroscopy (XPS). The results show that a high retention of the aromatic ring structure of the starting monomer in the deposited plasma films is obtained when a low discharge power of 15 W was used during film formation. In the case of higher discharge power of 35 W, more severe monomer molecular fragmentation can be observed. The dielectric properties measurements show that a low dielctric constant of 2.62 can be obtained for PPCIQ thin film deposited at 15 W.

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Atomic Layer Deposited Hybrid Organic-Inorganic Aluminates as Potential Low-k Dielectric Materials

MRS Proceedings ◽

10.1557/opl.2015.519 ◽

2015 ◽

Vol 1791 ◽

pp. 15-20 ◽

Cited By ~ 1

Author(s):

Karina B. Klepper ◽

Ville Miikkulainen ◽

Ola Nilsen ◽

Helmer Fjellvåg ◽

Ming Liu ◽

...

Keyword(s):

Thin Films ◽

Carboxylic Acids ◽

Material Properties ◽

Atomic Layer ◽

Dielectric Materials ◽

Low Dielectric Constant ◽

Leakage Currents ◽

Low Dielectric ◽

Low K ◽

Trimethyl Aluminum

ABSTRACTThe material properties of atomic layer deposited hybrid organic-inorganic aluminate thin films have been evaluated for potential low dielectric constant (i.e. low-k) applications. The hybrid aluminates were deposited using trimethyl aluminum and various linear and aromatic carboxylic acids. The observed electrical and mechanical properties for the hybrid aluminate films varied greatly depending on the selected organic acid with k values ranging from 2.5 to 5.1 and Young’s modulus ranging from 6 to 40 GPa. Leakage currents as low as 4 x 10-10 A/cm2 (at 2 MV/cm) were obtained for films grown using saturated linear carboxylic acids. These results suggest the potential of ALD hybrid aluminate thin films for low-k dielectric applications.

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