Atomic Layer Deposited Hybrid Organic-Inorganic Aluminates as Potential Low-k Dielectric Materials

2015 ◽  
Vol 1791 ◽  
pp. 15-20 ◽  
Author(s):  
Karina B. Klepper ◽  
Ville Miikkulainen ◽  
Ola Nilsen ◽  
Helmer Fjellvåg ◽  
Ming Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Carboxylic Acids ◽  
Material Properties ◽  
Atomic Layer ◽  
Dielectric Materials ◽  
Low Dielectric Constant ◽  
Leakage Currents ◽  
Low Dielectric ◽  
Low K ◽  
Trimethyl Aluminum

ABSTRACTThe material properties of atomic layer deposited hybrid organic-inorganic aluminate thin films have been evaluated for potential low dielectric constant (i.e. low-k) applications. The hybrid aluminates were deposited using trimethyl aluminum and various linear and aromatic carboxylic acids. The observed electrical and mechanical properties for the hybrid aluminate films varied greatly depending on the selected organic acid with k values ranging from 2.5 to 5.1 and Young’s modulus ranging from 6 to 40 GPa. Leakage currents as low as 4 x 10-10 A/cm2 (at 2 MV/cm) were obtained for films grown using saturated linear carboxylic acids. These results suggest the potential of ALD hybrid aluminate thin films for low-k dielectric applications.

Sealing of low-k dielectric (k=2.0) with self-assembled monolayers (SAMs) for the atomic layer deposition (ALD) of TiN

2013 ◽  
Vol 1559 ◽  
Author(s):  
Yiting Sun ◽  
Elisabeth Levrau ◽  
Michiel Blauw ◽  
Johan Meersschaut ◽  
Patrick Verdonck ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Self Assembled Monolayers ◽  
Low Dielectric Constant ◽  
Hydroxyl Groups ◽  
Low Dielectric ◽  
Tin Film ◽  
Layer Deposition ◽  
Pore Sealing ◽  
Assembled Monolayers ◽  
Low K

ABSTRACTIn this work, a novel low dielectric constant (low-k) pore sealing approach was engineered by depositing firstly a sub-2 nm SAMs and then a 3 nm TiN barrier film. The low-k film was pretreated by plasma to introduce hydroxyl groups onto the surface, followed by SAMs deposition. Then a TiN film was deposited from tetrakis(dimethylamino)titanium (TDMAT) via ALD as a dielectric barrier. Penetration of Ti atoms into low-k was measured and used to evaluate the sealing ability of SAMs. For the samples covered with SAMs, around 90% reduction of Ti atoms penetration was achieved. The pore radius was reduced to below 0.5 nm after the barrier deposition. The ∆k after pretreatment and after SAMs are 0.1 and 0.16, respectively.

Novel Materials as Interlayer Low-K Dielectrics for CMOS Interconnect Applications

2011 ◽  
Vol 110-116 ◽  
pp. 5380-5383
Author(s):  
Tejas R. Naik ◽  
Veena R. Naik ◽  
Nisha P. Sarwade
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuits ◽  
Dielectric Materials ◽  
Low Dielectric Constant ◽  
Interlayer Dielectric ◽  
Novel Materials ◽  
Low Dielectric ◽  
Processing Properties ◽  
New Generation ◽  
Low K

Scaling down the integrated circuits has resulted in the arousal of number of problems like interaction between interconnect, crosstalk, time delay etc. These problems can be overcome by new designs and by use of corresponding novel materials, which may be a solution to these problems. In the present paper we try to put forward very recent development in the use of novel materials as interlayer dielectrics (ILDs) having low dielectric constant (k) for CMOS interconnects. The materials presented here are porous and hybrid organo-inorganic new generation interlayer dielectric materials possessing low dielectric constant and better processing properties.

Atomic Layer Deposition of Tantalum Nitride on Organosilicate and Organic Polymerbased Low Dielectric Constant Materials

2004 ◽  
Vol 812 ◽  
Author(s):  
Oscar van der Straten ◽  
Yu Zhu ◽  
Jonathan Rullan ◽  
Katarzyna Topol ◽  
Kathleen Dunn ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tantalum Nitride ◽  
Experimental Methodology ◽  
Low Dielectric Constant ◽  
Adhesion Properties ◽  
Low Dielectric ◽  
Layer Deposition ◽  
Low K

AbstractA previously developed metal-organic atomic layer deposition (ALD) tantalum nitride (TaNx) process was employed to investigate the growth of TaNx liners on low dielectric constant (low-k) materials for liner applications in advanced Cu/low-k interconnect metallization schemes. ALD of TaNx was performed at a substrate temperature of 250°C by alternately exposing low-k materials to tertbutylimido-tris(diethylamido)tantalum (TBTDET) and ammonia (NH3), separated by argon purge steps. The dependence of TaNx film thickness on the number of ALD cycles performed on both organosilicate and organic polymer-based low-k materials was determined and compared to baseline growth characteristics of ALD TaNx on SiO2. In order to assess the effect of the deposition of TaNx on surface roughness, atomic force microscopy (AFM) measurements were carried out prior to and after the deposition of TaNx on the low-k materials. The stability of the interface between TaNx and the low-k materials after thermal annealing at 350°C for 30 minutes was studied by examining interfacial roughness profiles using cross-sectional imaging in a high-resolution transmission electron microscope (HR-TEM). The wetting and adhesion properties of Cu/low-k were quantified using a solid-state wetting experimental methodology after integration of ALD TaNx liners with Cu and low-k dielectrics.

Adhesion Energy Measurements of Multilayer Low-K Dielectric Materials for ULSI Applications

1998 ◽  
Vol 511 ◽  
Author(s):  
E. O. Shaffer ◽  
M. E. Mills ◽  
D. Hawn ◽  
M. Van Gestel ◽  
A. Knorr ◽  
...  
Keyword(s):  
Surface Analysis ◽  
Critical Dimension ◽  
Dielectric Materials ◽  
Low Dielectric Constant ◽  
New Materials ◽  
Low Dielectric ◽  
Processing Strategies ◽  
Mechanical Adhesion ◽  
Low K ◽  
Poor Adhesion

ABSTRACTCurrently, the IC industry is researching the integration of a variety of materials to meet the low dielectric constant requirement for improved back-end of line (BEOL) interconnect performance. One critical dimension for successful ntegration of these new materials is maintaining mechanical integrity through multilayer processes. This includes both cohesive and adhesive fracture resistance. The latter adds additional complexity in that adhesive toughness is a function of the adherend materials and the processes used to join them. Hence, many good dielectric materials may be rematurely eliminated from further research not because of inherently poor adhesion but because of the necessity to optimize processing strategies.In this paper, we use the modified Edge Liftoff Test (m-ELT) to quantify the mechanical adhesion of multilayer blanket coatings. A specific example is used to demonstrate the utility of combining the m-ELT with surface analysis to optimize the reliability of low-K dielectric resins for use in ULSI applications. The system studied consists of a Cyclotene™ 5021(BCB) low-K material integrated with CVD aluminum for single level, damascene structures. The effects of liner layer metallurgy and surface plasma treatments are measured. Surface analysis is done on the failed parts to understand the location of the failure. In this way recommendations for process optimization can be made.

Electrical/Mechanical Properties of Porous Low-k Thin Films by Using Various Supramolecule Based Porogen

2007 ◽  
Vol 124-126 ◽  
pp. 185-188
Author(s):  
Jin Heong Yim ◽  
Young Kwon Park ◽  
Jong Ki Jeon
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Electrical Properties ◽  
Pore Diameter ◽  
Dielectric Materials ◽  
Porous Films ◽  
Low Dielectric ◽  
Mechanical And Electrical Properties ◽  
Low K ◽  
Deposited Films

The porous SSQ (silsesquioxane) films were prepared by using alkoxy silyl substituted cyclodextrin (sCD) and methyl substituted cyclodextrin (tCD) based porogen. The mechanical and electrical properties of these deposited films were investigated for the applications as low dielectric materials. The mechanical properties of porous film by using sCD are worse than those by using tCD due to its high pore interconnection length. sCD templated porous films show almost constant pore diameter as a function of porogen concentration due to strong linear polymerization of the sCD molecules through polycondensation.

Determination of the Modulus and Hardness of Spin-on Zeolite Low-K Thin Films

2005 ◽  
Vol 880 ◽  
Author(s):  
Mark Johnson ◽  
Zijian Li ◽  
Yushan Yan ◽  
Junlan Wang
Keyword(s):  
Thin Films ◽  
Integrated Circuit ◽  
Material Selection ◽  
Dielectric Materials ◽  
Dielectric Constants ◽  
Depth Sensing ◽  
New Class ◽  
Low Dielectric ◽  
Pure Silica ◽  
Low K

AbstractWith the semiconductor technologies continuously pushing the miniaturization limits, there is a growing interest in developing novel low dielectric constant (low-k) materials to replace traditional dense SiO2 based insulators. In order to survive the multi-step integration process and provide reliable material and structure for the desired integrated circuit (IC) functions, the new low-k materials have to be mechanically strong and stable. Thus the material selection and mechanical characterization are vital in the successful development of next generation low-k dielectrics. A new class of low-k dielectric materials, nanoporous pure-silica zeolite, is prepared in thin films using IC compatible spin coating process and characterized using depth sensing nanoindentation technique. The elastic modulus measurements of the zeolite thin films are found to be significantly higher than that of other porous silicates with similar porosity and dielectric constants. Correlations of the mechanical, microstructural and electrical properties are discussed in detail.

Material Properties of a SiOC Low Dielectric Constant Film with Extendibility to k < 2.7

2000 ◽  
Vol 612 ◽  
Author(s):  
Eugene S. Lopata ◽  
Lydia Young ◽  
John T. Felts
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Material Properties ◽  
Low Dielectric Constant ◽  
Adhesion Properties ◽  
Interlayer Dielectric ◽  
Good Thermal Stability ◽  
Low Dielectric ◽  
Excellent Adhesion ◽  
Low K

AbstractA plasma deposited SiOC very low k (VLK) interlayer dielectric (ILD) film has been developed which can be tuned to 2.5 = k = 3.0, demonstrates very good thermal stability, excellent adhesion properties, acceptable hardness, and an indication that it may be extendible to k < 2.5. This paper will disclose properties of this SiOC film which are important to a VLK ILD application.

Structure-Property Correlation in Low K Dielectric Materials

1999 ◽  
Vol 565 ◽  
Author(s):  
Michael Morgen ◽  
Jie-Hua Zhao ◽  
Michael Hay ◽  
Taiheui Cho ◽  
Paul S. Ho
Keyword(s):  
Dielectric Constant ◽  
Mechanical Stability ◽  
Process Integration ◽  
Dielectric Materials ◽  
Thermomechanical Properties ◽  
Low Dielectric Constant ◽  
Structure Property ◽  
Material Development ◽  
Low Dielectric ◽  
Low K

AbstractIn recent years there have been widespread efforts to identify low dielectric constant materials that can satisfy a number of diverse performance requirements necessary for successful integration into IC devices. This has led to extensive efforts to develop low k materials and the associated process integration. A particularly difficult challenge for material development has been to find the combination of low dielectric constant and good thermal and mechanical stability. In this paper recent characterization results for low k materials performed at the University of Texas will be reviewed, with an emphasis on the relationship of chemical structure to the aforementioned key material properties. For example, measurements showing the effect of film porosity on dielectric constant and thermal and mechanical properties is presented. This data, as well as that for other material types, demonstrates the tradeoffs between dielectric constant and thermomechanical properties that are often made during the course of material development.

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Dielectric Constant ◽  
Pore Structure ◽  
Pore Diameter ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Cyclodextrin Derivatives ◽  
Low Dielectric ◽  
Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

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