WeC-2-3 Development of innovative dilatancy pad and high-speed / high-pressure polishing machine aimed for high-efficient and high-quality processing of next generation semiconductor substrates

2015 ◽  
Vol 2015 (0) ◽  
pp. _WeC-2-3-1-_WeC-2-3-3
Author(s):  
Tsutomu Yamazaki ◽  
Kiyoshi Seshimo ◽  
Hideaki Nishizawa ◽  
Masanori Ohtsubo ◽  
Hideo Aida ◽  
...  
Keyword(s):  
High Pressure ◽  
High Speed ◽  
Next Generation ◽  
High Quality ◽  
High Efficient ◽  
Semiconductor Substrates ◽  
Polishing Machine

scholarly journals Properties of InN layers grown by High Pressure CVD

2006 ◽  
Vol 955 ◽  
Author(s):  
Mustafa Alevli ◽  
Goksel Durkaya ◽  
Ronny Kirste ◽  
Aruna Weesekara ◽  
Unil Perera ◽  
...  
Keyword(s):  
High Pressure ◽  
High Speed ◽  
Growth Parameters ◽  
Free Carrier ◽  
Dielectric Constants ◽  
High Quality ◽  
Group Iii ◽  
High Efficient ◽  
Nitride Alloys ◽  
Group Iii Nitride

ABSTRACTIndium nitride (InN) and indium-rich group III-nitride alloys are promising materials for advanced optoelectronic device applications. Indium-rich alloys, e.g. (Ga1-y-xAlyInx)N will enable the fabrication of high-efficient light emitting diodes tunable in the whole visible spectral region, as well as advanced high speed optoelectronics for optical communication operating. The present limitation in this area is the growth of high quality InN and indium-rich group III-nitride alloys as documented in many controversial reports on the true physical properties of InN. The difficulties arise from the low dissociation temperature of InN that requires an extraordinarily high nitrogen overpressure to stabilize the material up to optimum growth temperatures. We developed a novel “high-pressure chemical vapor deposition” (HPCVD) system, capable to control and analyze the vast different partial pressures of the constituents. Our results show that the chosen HPCVD pathway leads to high-quality single crystalline InN, demonstrating that HPCVD is a viable tool for the growth of indium rich group III nitride alloys. The structural analysis of InN deposited on GaN-sapphire substrate by XRD show single phase InN(0002) peaks with full width half maximum (FWHM) around 400 arcsec. Infrared reflectance spectroscopy is used to analyze the plasmon frequencies, high frequency dielectric constants, the free carrier concentrations and carrier mobilities in these layers. For nominal undoped InN layers, free carrier concentrations in the mid 1019 cm−3 and mobilities around 600 cm−2-V-1-s-1 are observed. Further improvements are expected as the growth parameters are optimized. The explored growth parameters are close to of those employed for GaN growth conditions, which is a major step towards the fabrication of indium rich (Ga1−y−xAlyInx)N alloys and heterostructures.

The Development of Auxiliary Sets in Novel Cold Roll Forming Line - Continuous Mini Stretching-Bending Straighter and Roller Punching System

2011 ◽  
Vol 291-294 ◽  
pp. 1178-1182
Author(s):  
Yan Bing Du ◽  
Jing Tao Han ◽  
Yong Jun Zhang
Keyword(s):  
High Speed ◽  
High Efficiency ◽  
Thin Strip ◽  
Roll Forming ◽  
Cold Roll Forming ◽  
High Quality ◽  
Cold Bending ◽  
Cold Roll ◽  
High Efficient

Cold roll forming thin strip products occupy a rather large proportion of novel cold bending manufacturing. Conventional roller straightening could not obtain perfect straightening effects when the thickness of strip less than 1mm. On the basis of continuous roller stretcher straightening theory, we developed an area saved, high efficient strip straightening facility. At the same time, punching is also requested during the cold roll forming of strips. High quality productions can be achieved at high speed through the roller punching system, so the device is adaptive for high efficiency cold roll forming production.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

Development of High-Quality Newsprint for Next Generation

2006 ◽  
Vol 60 (1) ◽  
pp. 59-63 ◽  
Author(s):  
Fuminari Nonomura
Keyword(s):  
Next Generation ◽  
High Quality

Cyclone Bomb hits Southern Brazil in 2020

2020 ◽  
Vol 3 (3) ◽  
Author(s):  
Ricardo Gobato ◽  
Alireza Heidari
Keyword(s):  
High Pressure ◽  
Atmospheric Pressure ◽  
High Speed ◽  
Satellite Images ◽  
The State ◽  
Southern Brazil ◽  
Santa Catarina ◽  
High Area ◽  
South Of Brazil ◽  
Rapid Drop

An “explosive extratropical cyclone” is an atmospheric phenomenon that occurs when there is a very rapid drop in central atmospheric pressure. This phenomenon, with its characteristic of rapidly lowering the pressure in its interior, generates very intense winds and for this reason it is called explosive cyclone, bomb cyclone. With gusts recorded of 116 km/h, atmospheric phenomenon – “cyclone bomb” (CB) hit southern Brazil on June 30, the beginning of winter 2020, causing destruction in its influence over. One of the cities most affected was Chapecó, west of the state of Santa Catarina. The satellite images show that the CB generated a low pressure (976 mbar) inside it, generating two atmospheric currents that moved at high speed. In a northwest-southeast direction, Bolivia and Paraguay, crossing the states of Parana and Santa Catarina, and this draft that hit the south of Brazil, which caused the destruction of the affected states.  Another moving to Argentina, southwest-northeast direction, due to high area of high pressure (1022 mbar). Both enhanced the phenomenon.

YSS YXM4

Alloy Digest ◽  
2019 ◽  
Vol 68 (11) ◽  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Physical Properties ◽  
Tool Steel ◽  
High Speed ◽  
Temperature Performance

Abstract YSS YXM4 is a cobalt-alloyed molybdenum high-speed tool steel with resistance to abrasion, seizure, and deformation under high pressure. This datasheet provides information on composition, physical properties, and hardness. It also includes information on high temperature performance. Filing Code: TS-780. Producer or source: Hitachi Metals America, Ltd.

scholarly journals 2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Hitesh Agarwal ◽  
Bernat Terrés ◽  
Lorenzo Orsini ◽  
Alberto Montanaro ◽  
Vito Sorianello ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hafnium Oxide ◽  
High Speed ◽  
Hexagonal Boron Nitride ◽  
Temperature Stability ◽  
Cost Effective ◽  
Fold Increase ◽  
Building Blocks ◽  
High Quality ◽  
New Device

AbstractElectro-absorption (EA) waveguide-coupled modulators are essential building blocks for on-chip optical communications. Compared to state-of-the-art silicon (Si) devices, graphene-based EA modulators promise smaller footprints, larger temperature stability, cost-effective integration and high speeds. However, combining high speed and large modulation efficiencies in a single graphene-based device has remained elusive so far. In this work, we overcome this fundamental trade-off by demonstrating the 2D-3D dielectric integration in a high-quality encapsulated graphene device. We integrated hafnium oxide (HfO2) and two-dimensional hexagonal boron nitride (hBN) within the insulating section of a double-layer (DL) graphene EA modulator. This combination of materials allows for a high-quality modulator device with high performances: a ~39 GHz bandwidth (BW) with a three-fold increase in modulation efficiency compared to previously reported high-speed modulators. This 2D-3D dielectric integration paves the way to a plethora of electronic and opto-electronic devices with enhanced performance and stability, while expanding the freedom for new device designs.

scholarly journals Semiconductor Heteroepitaxy

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 229
Author(s):  
Roberto Bergamaschini ◽  
Elisa Vitiello
Keyword(s):  
High Performance ◽  
Next Generation ◽  
High Quality

The quest for high-performance and scalable devices required for next-generation semiconductor applications inevitably passes through the fabrication of high-quality materials and complex designs [...]

Experimental investigation of wall heat transfer due to spray combustion in a high-pressure/high-temperature vessel

2021 ◽  
pp. 146808742110072
Author(s):  
Karri Keskinen ◽  
Walter Vera-Tudela ◽  
Yuri M Wright ◽  
Konstantinos Boulouchos
Keyword(s):  
Heat Transfer ◽  
Heat Flux ◽  
High Pressure ◽  
High Temperature ◽  
High Speed ◽  
Transfer Problem ◽  
Wall Heat Transfer ◽  
Gas Temperature ◽  
Reference Case ◽  
High Pressure High Temperature

Combustion chamber wall heat transfer is a major contributor to efficiency losses in diesel engines. In this context, thermal swing materials (adapting to the surrounding gas temperature) have been pinpointed as a promising mitigative solution. In this study, experiments are carried out in a high-pressure/high-temperature vessel to (a) characterise the wall heat transfer process ensuing from wall impingement of a combusting fuel spray, and (b) evaluate insulative improvements provided by a coating that promotes thermal swing. The baseline experimental condition resembles that of Spray A from the Engine Combustion Network, while additional variations are generated by modifying the ambient temperature as well as the injection pressure and duration. Wall heat transfer and wall temperature measurements are time-resolved and accompanied by concurrent high-speed imaging of natural luminosity. An investigation with an uncoated wall is carried out with several sensor locations around the stagnation point, elucidating sensor-to-sensor variability and setup symmetry. Surface heat flux follows three phases: (i) an initial peak, (ii) a slightly lower plateau dependent on the injection duration, and (iii) a slow decline. In addition to the uncoated reference case, the investigation involves a coating made of porous zirconia, an established thermal swing material. With a coated setup, the projection of surface quantities (heat flux and temperature) from the immersed measurement location requires additional numerical analysis of conjugate heat transfer. Starting from the traces measured beneath the coating, the surface quantities are obtained by solving a one-dimensional inverse heat transfer problem. The present measurements are complemented by CFD simulations supplemented with recent rough-wall models. The surface roughness of the coated specimen is indicated to have a significant impact on the wall heat flux, offsetting the expected benefit from the thermal swing material.

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