High accuracy cross-sectional shape analysis by coherent soft x-ray diffraction

2020 ◽  
Vol 59 (28) ◽  
pp. 8661
Author(s):  
Tetsuya Hoshino ◽  
Masahiko Shiono ◽  
Banerjee Saswatee ◽  
Sadao Aoki ◽  
Kenji Sakurai ◽  
...  
Keyword(s):  
Shape Analysis ◽  
High Accuracy ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Sectional Shape

scholarly journals X-ray Diffraction Analysis and Williamson-Hall Method in USDM Model for Estimating More Accurate Values of Stress-Strain of Unit Cell and Super Cells (2 × 2 × 2) of Hydroxyapatite, Confirmed by Ultrasonic Pulse-Echo Test

Materials ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 2949
Author(s):  
Marzieh Rabiei ◽  
Arvydas Palevicius ◽  
Amir Dashti ◽  
Sohrab Nasiri ◽  
Ahmad Monshi ◽  
...  
Keyword(s):  
Young’S Modulus ◽  
Young's Modulus ◽  
Ultrasonic Pulse ◽  
High Accuracy ◽  
Unit Cell ◽  
Deformation Model ◽  
X Ray Diffraction ◽  
Uniform Deformation ◽  
X Ray ◽  
Pulse Echo

Taking into account X-ray diffraction, one of the well-known methods for calculating the stress-strain of crystals is Williamson-Hall (W–H). The W-H method has three models, namely (1) Uniform deformation model (UDM); (2) Uniform stress deformation model (USDM); and (3) Uniform deformation energy density model (UDEDM). The USDM and UDEDM models are directly related to the modulus of elasticity (E). Young’s modulus is a key parameter in engineering design and materials development. Young’s modulus is considered in USDM and UDEDM models, but in all previous studies, researchers used the average values of Young’s modulus or they calculated Young’s modulus only for a sharp peak of an XRD pattern or they extracted Young’s modulus from the literature. Therefore, these values are not representative of all peaks derived from X-ray diffraction; as a result, these values are not estimated with high accuracy. Nevertheless, in the current study, the W-H method is used considering the all diffracted planes of the unit cell and super cells (2 × 2 × 2) of Hydroxyapatite (HA), and a new method with the high accuracy of the W-H method in the USDM model is presented to calculate stress (σ) and strain (ε). The accounting for the planar density of atoms is the novelty of this work. Furthermore, the ultrasonic pulse-echo test is performed for the validation of the novelty assumptions.

scholarly journals Multi-Scale Studies of 3D Printed Mn–Na–W/SiO2 Catalyst for Oxidative Coupling of Methane

Catalysts ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 290
Author(s):  
Tim Karsten ◽  
Vesna Middelkoop ◽  
Dorota Matras ◽  
Antonis Vamvakeros ◽  
Stephen Poulston ◽  
...  
Keyword(s):  
Oxidative Coupling ◽  
Oxidative Coupling Of Methane ◽  
Operating Conditions ◽  
Homogeneous Distribution ◽  
Silica Support ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Multi Scale ◽  
3D Printed

This work presents multi-scale approaches to investigate 3D printed structured Mn–Na–W/SiO2 catalysts used for the oxidative coupling of methane (OCM) reaction. The performance of the 3D printed catalysts has been compared to their conventional analogues, packed beds of pellets and powder. The physicochemical properties of the 3D printed catalysts were investigated using scanning electron microscopy, nitrogen adsorption and X-ray diffraction (XRD). Performance and durability tests of the 3D printed catalysts were conducted in the laboratory and in a miniplant under real reaction conditions. In addition, synchrotron-based X-ray diffraction computed tomography technique (XRD-CT) was employed to obtain cross sectional maps at three different positions selected within the 3D printed catalyst body during the OCM reaction. The maps revealed the evolution of catalyst active phases and silica support on spatial and temporal scales within the interiors of the 3D printed catalyst under operating conditions. These results were accompanied with SEM-EDS analysis that indicated a homogeneous distribution of the active catalyst particles across the silica support.

Determination of crystallinity of Chinese handmade papers by means of X-ray diffraction

2020 ◽  
Vol 41 (2) ◽  
pp. 69-86
Author(s):  
Peng Liu ◽  
Hongbin Zhang ◽  
Sinong Wang ◽  
Hui Yu ◽  
Bingjie Lu ◽  
...  
Keyword(s):  
Negative Influence ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Eulaliopsis Binata ◽  
Different Types ◽  
Powder Samples ◽  
Xrd Patterns ◽  
Xrd Method

AbstractThe crystallinity indices (CrI) of Chinese handmade papers were investigated using the X-ray diffraction (XRD) method. Four Chinese handmade papers, Yingchun, Zhuma, Yuanshu and Longxucao papers were used as model substrates of mulberry bark, ramie, bamboo and Eulaliopsis binata papers, respectively. Two forms of the paper samples, paper sheets and their comminuted powders, were used in this study. The results showed that their XRD patterns belong to the cellulose-I type and Iβ dominates the cellulose microstructure of these paper samples. Moreover, it was found that the microstructures and CrIs of cellulose of these papers were changed by the grinding treatment. This work suggested that the sheet form of the handmade papers is suitable to determine CrI by XRD, despite the contribution of non-cellulosic components in the papers. The order of CrIs for these paper sheet samples was Yingchun, Zhuma, Longxucao and Yuanshu papers. Besides CrIs, differences in cross-sectional areas of the crystalline zone of cellulose can be used for comparing different types of handmade papers. It was also found that the CrIs and crystallite size of paper cellulose varied between the sheet samples and the powder samples, illustrating that the pulverisation has a negative influence on the microstructure of the handmade papers.

Synthesis and Properties of Sb Layered Te/Cd Stack Prepared by Elemental Stack Method

2012 ◽  
Vol 488-489 ◽  
pp. 76-81 ◽  
Author(s):  
Subramani Shanmugan ◽  
Mutharasu Devarajan ◽  
Kamarulazizi Ibrahim
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Surface Morphology ◽  
Shape Analysis ◽  
Structural Parameters ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrical Studies ◽  
Sb Doping ◽  
Elemental Layer

Sb layered Te/Cd thin films have been prepared by using Stacked Elemental Layer (SEL) method. The presence of mixed phases (CdTe and Sb2Te3) in the films was confirmed by the x-ray diffraction technique. The calculated structural parameters demonstrated the feasibility of Sb doping via SEL method. The topographical and electrical studies of the synthesized thin films depicted the influence of Sb on both surface morphology and conductivity. The values of conductivity of the annealed films were in between 2 x 10-3 and 175 x 10-2 Scm-2. A desired chemical composition of films was confirmed from spectrum shape analysis using energy dispersive x-ray.

GaxIn1-xP/GaP Heterostructures on Si(001) Substrate

1996 ◽  
Vol 441 ◽  
Author(s):  
N. Sukidi ◽  
N. Dietz ◽  
U. Rossow ◽  
K. J. Bachmann
Keyword(s):  
Compositional Analysis ◽  
Chemical Beam Epitaxy ◽  
X Ray Diffraction ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Temperature Growth ◽  
X Ray ◽  
Vegard’S Law ◽  
Graded Interlayer ◽  
Source Materials

AbstractIn this contribution we report on the real-time monitoring of low temperature growth of epitaxial GaxIn1-xP/GaP heterostructures on Si(100) by pulse chemical beam epitaxy, using tertiary butylphosphine (TBP), triethylgallium (TEG), and trimethylindium (TMI) as source materials. Both step-graded and continuously graded heterostructures have been investigated. The composition of the GaxIn1-xP epilayers has been analyzed by various techniques including X-ray diffraction, Rutherford backscattering, Auger, and Raman spectroscopy. Good correlation has been found between X-ray diffraction, RBS, and Vegard's law compositional analysis. We used Ppolarized Reflectance Spectroscopy (PRS) and Laser Light Scattering (LLS) to monitor the growth rate and surface morphology during growth. The information gained by these techniques has been utilized in the improvement of the surface preconditioning as well as to optimize the initial heteroepitaxial nucleation and overgrowth process. We studied the optical response to the compositional changes in the surface reaction layer (SRL) during the exposure of the surface to either sequential or synchronous pulses of TEG and TMI. The cross sectional TEM analysis indicates that the synchronous exposure results in an abrupt GaxIn1-xP/GaP interface while the sequential exposure does not which may suggest a compositionally graded interlayer formation. For heteroepitaxial GaxIn1-xP films on Si, a buffer layer of GaP is found to be necessary for optimum uniformity of the GaxIn1-xP layer. The selective growth of GaxIn1-xP on Si(001) is accessed.

Surface Morphological Changes of Polyimide with Oxygen Reactive Ion Beam Etching (RIBE)

1988 ◽  
Vol 129 ◽  
Author(s):  
Kyung W. Paik ◽  
Arthur L. Ruoff
Keyword(s):  
Morphological Changes ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Ion Beam Etching ◽  
X Ray ◽  
Disordered Phase ◽  
Beam Incidence ◽  
Yield Difference ◽  
Sectional Plane

ABSTRACTAt the beginning of etching, surface asperities appeared on the top plane of the polyimide (PI) film. The formation of surface asperities is due to the ordered phase in PI film. The known dimension of the ordered phase measured by X-ray diffraction is consistant with the size of surface asperities, 100 Å, observed by TEM. Further ion doses made these asperties evolve into smooth bumps which then eroded into cones as a result of etch yield difference as a function of the angle of beam incidence Y(θ)/Y(0) which has a maximum at θ=70. Finally cones led to the development of grass-likestructure on the top plane of the PI film. The formation of platelike structure on the cross-sectional plane of PI indicates that the structural inhomogeniety of the PI film(the ordered and disordered phase) is the main cause for the surface morphological changes of PI.

scholarly journals Compositional Dependence of Structural Properties of Prepared Alloys and Films

2011 ◽  
Vol 2011 ◽  
pp. 1-6
Author(s):  
M. F. A. Alias ◽  
A. A. J. Al-Douri ◽  
E. M. N. Al-Fawadi ◽  
A. A. Alnajjar
Keyword(s):  
Room Temperature ◽  
Thermal Evaporation ◽  
High Accuracy ◽  
Compositional Dependence ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Good Agreement

Results of a study of alloys and films with various Pb content have been reported and discussed. Films of of thickness 1.5 μm have been deposited on glass substrates by flash thermal evaporation method at room temperature, under vacuum at constant deposition rate. These films were annealed under vacuum around 10−6Torr at different temperatures up to 523 K. The composition of the elements in alloys was determined by standard surfaces techniques such as atomic absorption spectroscopy (AAS) and X-ray fluorescence (XRF), and the results were found of high accuracy and in very good agreement with the theoretical values. The structure for alloys and films is determined by using X-ray diffraction. This measurement reveals that the structure is polycrystalline with cubic structure and there are strong peaks at the direction (200) and (111). The effect of heat treatment on the crystalline orientation, relative intensity, and grain size of films is presented.

scholarly journals The Reliability Improvement of Cu Interconnection by the Control of Crystallizedα-Ta/TaNxDiffusion Barrier

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Wei-Lin Wang ◽  
Chia-Ti Wang ◽  
Wei-Chun Chen ◽  
Kuo-Tzu Peng ◽  
Ming-Hsin Yeh ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Practical Application ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Reliability Improvement ◽  
N Concentration ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Interconnection Structure

Ta/TaN bilayers have been deposited by a commercial self-ionized plasma (SIP) system. The microstructures of Ta/TaN bilayers have been systematically characterized by X-ray diffraction patterns and cross-sectional transmission electron microscopy. TaN films deposited by SIP system are amorphous. The crystalline behavior of Ta film can be controlled by the N concentration of underlying TaN film. On amorphous TaN film with low N concentration, overdeposited Ta film is the mixture ofα- andβ-phases with amorphous-like structure. Increasing the N concentration of amorphous TaN underlayer successfully leads upper Ta film to form pureα-phase. For the practical application, the electrical property and reliability of Cu interconnection structure have been investigated by utilizing various types of Ta/TaN diffusion barrier. The diffusion barrier fabricated by the combination of crystallizedα-Ta and TaN with high N concentration efficiently reduces the KRc and improves the EM resistance of Cu interconnection structure.

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