scholarly journals Influence of the substrate material on the knife-edge based profiling of tightly focused light beams

2016 ◽  
Vol 24 (8) ◽  
pp. 8214 ◽  
Author(s):  
C. Huber ◽  
S. Orlov ◽  
P. Banzer ◽  
G. Leuchs
Keyword(s):  
Substrate Material ◽  
Knife Edge ◽  
Edge Based ◽  
Light Beams

scholarly journals Corrections to the knife-edge based reconstruction scheme of tightly focused light beams

2013 ◽  
Vol 21 (21) ◽  
pp. 25069 ◽  
Author(s):  
C. Huber ◽  
S. Orlov ◽  
P. Banzer ◽  
G. Leuchs
Keyword(s):  
Knife Edge ◽  
Reconstruction Scheme ◽  
Edge Based ◽  
Light Beams

scholarly journals Toward a Corrected Knife-Edge-Based Reconstruction of Tightly Focused Higher Order Beams

2020 ◽  
Vol 8 ◽  
Author(s):  
Sergej Orlov ◽  
Christian Huber ◽  
Pavel Marchenko ◽  
Peter Banzer ◽  
Gerd Leuchs
Keyword(s):  
Evaluation Method ◽  
Reconstruction Technique ◽  
Knife Edge ◽  
Polarized Beams ◽  
Edge Reconstruction ◽  
Linearly Polarized ◽  
Edge Method ◽  
Edge Based ◽  
Light Beams ◽  
Established Technique

The knife-edge method is an established technique for profiling of even tightly focused light beams. However, the straightforward implementation of this method fails if the materials and geometry of the knife-edges are not chosen carefully or, in particular, if knife-edges are used that are made of pure materials. Artifacts are introduced in these cases in the shape and position of the reconstructed beam profile due to the interaction of the light beam under study with the knife. Hence, corrections to the standard knife-edge evaluation method are required. Here we investigate the knife-edge method for highly focused radially and azimuthally polarized beams and their linearly polarized constituents. We introduce relative shifts for those constituents and report on the consistency with the case of a linearly polarized fundamental Gaussian beam. An adapted knife-edge reconstruction technique is presented and proof-of-concept tests are shown, demonstrating the reconstruction of beam profiles.

Knife-edge scanning measurements of subwavelength focused light beams

1977 ◽  
Vol 16 (7) ◽  
pp. 1971 ◽  
Author(s):  
A. H. Firester ◽  
M. E. Heller ◽  
P. Sheng
Keyword(s):  
Knife Edge ◽  
Light Beams

scholarly journals Knife-edge based measurement of the 4D transverse phase space of electron beams with picometer-scale emittance

2019 ◽  
Vol 22 (8) ◽  
Author(s):  
Fuhao Ji ◽  
Jorge Giner Navarro ◽  
Pietro Musumeci ◽  
Daniel B. Durham ◽  
Andrew M. Minor ◽  
...  
Keyword(s):  
Phase Space ◽  
Electron Beams ◽  
Knife Edge ◽  
Edge Based

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

Distortion in lattice-resolution scanned-probe microscope images

1993 ◽  
Vol 51 ◽  
pp. 522-523
Author(s):  
L. Fei
Keyword(s):  
Film Studies ◽  
Lattice Structure ◽  
Substrate Material ◽  
Repulsive Force ◽  
Instrument Calibration ◽  
Microscope Images ◽  
Probe Microscope ◽  
Electron Microscopes ◽  
Diffraction Patterns ◽  
Lattice Resolution

Scanned probe microscopes (SPM) have been widely used for studying the structure of a variety material surfaces and thin films. Interpretation of SPM images, however, remains a debatable subject at best. Unlike electron microscopes (EMs) where diffraction patterns and images regularly provide data on lattice spacings and angles within 1-2% and ∽1° accuracy, our experience indicates that lattice distances and angles in raw SPM images can be off by as much as 10% and ∽6°, respectively. Because SPM images can be affected by processes like the coupling between fast and slow scan direction, hysteresis of piezoelectric scanner, thermal drift, anisotropic tip and sample interaction, etc., the causes for such a large discrepancy maybe complex even though manufacturers suggest that the correction can be done through only instrument calibration.We show here that scanning repulsive force microscope (SFM or AFM) images of freshly cleaved mica, a substrate material used for thin film studies as well as for SFM instrument calibration, are distorted compared with the lattice structure expected for mica.

Microstructural characterization of YBaCuO Films on LaAlO3 substrates

1989 ◽  
Vol 47 ◽  
pp. 180-181
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
N. Lewis ◽  
L. G. Turner
Keyword(s):  
Dielectric Constant ◽  
Single Crystal ◽  
Film Growth ◽  
Microstructural Characterization ◽  
Lattice Parameter ◽  
Film Plane ◽  
Substrate Material ◽  
High Loss ◽  
Amorphous Substrates ◽  
High Dielectric

There have been a large number of recent studies of the growth of Y-Ba-Cu-O thin films, and these studies have employed a variety of substrates and growth techniques. To date, the highest values of Tc and Jc have been found for films grown by sputtering or coevaporation on single-crystal SrTiO3 substrates, which produces a uniaxially-aligned film with the YBa2Cu3Ox c-axis normal to the film plane. Multilayer growth of films on the same substrate produces a triaxially-aligned film (regions of the film have their c-axis parallel to each of the three substrate <100> directions) with lower values of Jc. Growth of films on a variety of other polycrystalline or amorphous substrates produces randomly-oriented polycrystalline films with low Jc. Although single-crystal SrTiO3 thus produces the best results, this substrate material has a number of undesireable characteristics relative to electronic applications, including very high dielectric constant and a high loss tangent at microwave frequencies. Recently, Simon et al. have shown that LaAlO3 could be used as a substrate for YBaCuO film growth. This substrate is essentially a cubic perovskite with a lattice parameter of 0.3792nm (it has a slight rhombohedral distortion at room temperature) and this material exhibits much lower dielectric constant and microwave loss tangents than SrTiO3. It is also interesting from a film growth standpoint since it has a slightly smaller lattice parameter than YBa2Cu3Ox (a=0.382nm, b=c/3=0.389nm), while SrTiO3 is slightly larger (a=0.3905nm).

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