scholarly journals Limitation of bulk GeSn alloy in the application of a high-performance laser due to the high threshold

2020 ◽  
Vol 29 (1) ◽  
pp. 441
Author(s):  
Haiyang Hong ◽  
Lu Zhang ◽  
Kun Qian ◽  
Yuying An ◽  
Cheng Li ◽  
...  
Keyword(s):  
High Performance ◽  
High Threshold ◽  
Gesn Alloy

High-performance normally-off recessed Tri-Gate GaN MIS-FETs in micrometer scale

2021 ◽  
Author(s):  
Chia-Jung Tsai ◽  
Xin-Rong You ◽  
Meng-Hsuan Tsai ◽  
Yue-Ming Hsin
Keyword(s):  
High Performance ◽  
Drain Current ◽  
High Threshold ◽  
Promising Technique ◽  
Gate Control ◽  
Control Capability ◽  
Micro Level ◽  
20 Nm ◽  
Micrometer Scale ◽  
Post Deposition

Abstract In this study, a normally-off AlGaN/GaN MIS-FET based on the combination of tri-gate and recessed MIS gate is fabricated and characterized. The recessed tri-gate MIS-FET is manufactured by micro-level trenches, defining the fin-shaped channel and improving the gate control capability. The recessed surface is cleaned by a diluted BOE, HCl solution, and TMAH treatment before a 20-nm Al2O3 deposition by ALD. After deposition, post-deposition annealing was carried out. Recessed tri-gate MIS-FET demonstrates a high threshold voltage of 3.1 V, a high drain current of 1121 mA/mm, and an on/off current ratio of 2×108. A smaller on-resistance of 5.4 Ω·mm compared with recessed planar MIS-FET of 12.7 Ω·mm is achieved. Besides, the devices show a low I-V hysteresis. All experimental results confirm micro-level trenches realize the advantages of the recessed tri-gate structures, which supports a promising technique to pursue the normally-off operation of GaN HEMTs.

Proficient Technique for High Performance Very Large-Scale Integration System to Amend Clock Gated Dual Edge Triggered Sense Amplifier Flip-Flop with Less Dissipation of Power Leakage

2021 ◽  
Vol 16 (4) ◽  
pp. 602-611
Author(s):  
A. N. Duraivel ◽  
B. Paulchamy ◽  
K. Mahendrakan
Keyword(s):  
High Performance ◽  
Large Scale ◽  
Supply Voltage ◽  
Clock Cycle ◽  
The State ◽  
High Threshold ◽  
Clock Signal ◽  
Signal Transfer ◽  
Flip Flop ◽  
Sleep Transistors

Clocked flip flops are used to memory in synchronous or clocked series networks, adjusting the individual clock signal status. Therefore, at these times of clock signal transfer, the state of the memory unit and the state of the whole electrical structure change. It’s only during signal transfer that the key to a flip-flop being correctly operated. Two transitions from 0 and 1 are followed by a clock pulse, and 1 to 0. The pulse shift is defined by the positive and negative sides of the pulse. The data on or off the clock cycle edges are recorded by a single-edge trigger flip flop (SETFF), but the flip flop with the double-edge sensor amplifier (DETSAFF). Another common technique for dynamic energy consumption reduced when the device is idle is the clock gating. In this document. Sleep is used to reduce the power of the leakage Here are the following: High threshold voltages sleep transistors are used. Among the supply voltage and VDD the sleep pMOS transistor and the pull-up system and between the network and the ground GND a sleep NMOs Transistor is located. With sleep transistors, CG-SAFF can save up to 30% of its power during zero input switching operation. For different sequential device architecture, the proposed flip-flop may be used.

scholarly journals A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure

Micromachines ◽  
2019 ◽  
Vol 10 (12) ◽  
pp. 848
Author(s):  
Zhonghao Sun ◽  
Huolin Huang ◽  
Nan Sun ◽  
Pengcheng Tao ◽  
Cezhou Zhao ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Electron Mobility ◽  
Computer Aided Design ◽  
High Performance ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
Uniform Electric Field ◽  
High Threshold ◽  
High Electron ◽  
High Electron Mobility

A novel structure scheme by transposing the gate channel orientation from a long horizontal one to a short vertical one is proposed and verified by technology computer-aided design (TCAD) simulations to achieve GaN-based normally-off high electron mobility transistors (HEMTs) with reduced on-resistance and improved threshold voltage. The proposed devices exhibit high threshold voltage of 3.1 V, high peak transconductance of 213 mS, and much lower on-resistance of 0.53 mΩ·cm2 while displaying better off-state characteristics owing to more uniform electric field distribution around the recessed gate edge in comparison to the conventional lateral HEMTs. The proposed scheme provides a new technical approach to realize high-performance normally-off HEMTs.

scholarly journals A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors

2020 ◽  
Vol 6 (15) ◽  
pp. eaaz4948 ◽  
Author(s):  
Satyaprasad P. Senanayak ◽  
Mojtaba Abdi-Jalebi ◽  
Varun S. Kamboj ◽  
Remington Carey ◽  
Ravichandran Shivanna ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Defect Density ◽  
Field Effect Transistors ◽  
Vacancy Concentration ◽  
High Mobility ◽  
Substantial Improvement ◽  
High Threshold ◽  
Ion Migration ◽  
P Type

Despite sustained research, application of lead halide perovskites in field-effect transistors (FETs) has substantial concerns in terms of operational instabilities and hysteresis effects which are linked to its ionic nature. Here, we investigate the mechanism behind these instabilities and demonstrate an effective route to suppress them to realize high-performance perovskite FETs with low hysteresis, high threshold voltage stability (ΔVt < 2 V over 10 hours of continuous operation), and high mobility values >1 cm2/V·s at room temperature. We show that multiple cation incorporation using strain-relieving cations like Cs and cations such as Rb, which act as passivation/crystallization modifying agents, is an effective strategy for reducing vacancy concentration and ion migration in perovskite FETs. Furthermore, we demonstrate that treatment of perovskite films with positive azeotrope solvents that act as Lewis bases (acids) enables a further reduction in defect density and substantial improvement in performance and stability of n-type (p-type) perovskite devices.

LEAKAGE POWER REDUCTION OF ASYNCHRONOUS PIPELINES

2011 ◽  
Vol 20 (02) ◽  
pp. 207-222
Author(s):  
BEHNAM GHAVAMI ◽  
HOSSEIN PEDRAM ◽  
AREZOO SALARPOUR
Keyword(s):  
Threshold Voltage ◽  
High Performance ◽  
Graph Model ◽  
Cmos Technology ◽  
Leakage Power ◽  
Total Power ◽  
High Threshold ◽  
Single Chip ◽  
Technology Scaling ◽  
Performance Penalty

With CMOS technology scaling, leakage power is expected to become a significant portion of the total power. A dual-threshold CMOS circuit, which has both high and low threshold transistors in a single chip, can be used to deal with the leakage problem in high performance applications. This paper presents dual-threshold voltage technique for reducing leakage power dissipation of Quasi Delay Insensitive asynchronous pipelines while still maintaining high performance of these circuits. We exploited the Dependency Graph model to produce a formal performance analysis. In order to reduce leakage power an efficient algorithm for selecting and assigning high threshold voltage to templates of a pipeline is proposed. Results obtained indicate that our proposed technique can achieve on average 40% savings for leakage power, while there is no performance penalty.

A High Performance Energy Analyzer for Use in Electron Scanning Microscopy

1969 ◽  
Vol 27 ◽  
pp. 14-15
Author(s):  
A. V. Crewe ◽  
M. Isaacson ◽  
D. Johnson
Keyword(s):  
High Performance ◽  
Vertical Plane ◽  
Median Plane ◽  
Electron Gun ◽  
Uniform Field ◽  
Loss Mechanism ◽  
Electron Scanning Microscopy ◽  
Sector Type ◽  
Double Focusing ◽  
Electron Energy Loss

A double focusing magnetic spectrometer has been constructed for use with a field emission electron gun scanning microscope in order to study the electron energy loss mechanism in thin specimens. It is of the uniform field sector type with curved pole pieces. The shape of the pole pieces is determined by requiring that all particles be focused to a point at the image slit (point 1). The resultant shape gives perfect focusing in the median plane (Fig. 1) and first order focusing in the vertical plane (Fig. 2).

Vacuum System to Minimize the Specimen Contamination of High-Performance EM

1977 ◽  
Vol 35 ◽  
pp. 68-69
Author(s):  
N. Yoshimura ◽  
K. Shirota ◽  
T. Etoh
Keyword(s):  
Electron Microscope ◽  
High Speed ◽  
High Performance ◽  
High Vacuum ◽  
Vacuum System ◽  
Pump System ◽  
Pumping System ◽  
Diffusion Pump ◽  
Almost All ◽  
Cascade Type

One of the most important requirements for a high-performance EM, especially an analytical EM using a fine beam probe, is to prevent specimen contamination by providing a clean high vacuum in the vicinity of the specimen. However, in almost all commercial EMs, the pressure in the vicinity of the specimen under observation is usually more than ten times higher than the pressure measured at the punping line. The EM column inevitably requires the use of greased Viton O-rings for fine movement, and specimens and films need to be exchanged frequently and several attachments may also be exchanged. For these reasons, a high speed pumping system, as well as a clean vacuum system, is now required. A newly developed electron microscope, the JEM-100CX features clean high vacuum in the vicinity of the specimen, realized by the use of a CASCADE type diffusion pump system which has been essentially improved over its predeces- sorD employed on the JEM-100C.

Use of the Magnetostatic Analogue In Electromagnetic Lens Engineering

1970 ◽  
Vol 28 ◽  
pp. 360-361
Author(s):  
John W. Coleman
Keyword(s):  
Boundary Conditions ◽  
High Performance ◽  
Force Fields ◽  
Optical Design ◽  
Direct Conversion ◽  
Design Engineering ◽  
Design Data ◽  
Scalar Potentials ◽  
Geometric Elements ◽  
At Will

In the design engineering of high performance electromagnetic lenses, the direct conversion of electron optical design data into drawings for reliable hardware is oftentimes difficult, especially in terms of how to mount parts to each other, how to tolerance dimensions, and how to specify finishes. An answer to this is in the use of magnetostatic analytics, corresponding to boundary conditions for the optical design. With such models, the magnetostatic force on a test pole along the axis may be examined, and in this way one may obtain priority listings for holding dimensions, relieving stresses, etc..The development of magnetostatic models most easily proceeds from the derivation of scalar potentials of separate geometric elements. These potentials can then be conbined at will because of the superposition characteristic of conservative force fields.

Prospects for convergent beam electron diffraction with a 200kV cold field-emission transmission electron microscope

1991 ◽  
Vol 49 ◽  
pp. 466-467
Author(s):  
J W Steeds ◽  
R Vincent
Keyword(s):  
Field Emission ◽  
High Performance ◽  
Small Diameter ◽  
Convergent Beam Electron Diffraction ◽  
Zone Axis ◽  
Medium Voltage ◽  
Transmission Electron ◽  
Good Crystallinity ◽  
Special Modification ◽  
Convergent Beam

We review the analytical powers which will become more widely available as medium voltage (200-300kV) TEMs with facilities for CBED on a nanometre scale come onto the market. Of course, high performance cold field emission STEMs have now been in operation for about twenty years, but it is only in relatively few laboratories that special modification has permitted the performance of CBED experiments. Most notable amongst these pioneering projects is the work in Arizona by Cowley and Spence and, more recently, that in Cambridge by Rodenburg and McMullan.There are a large number of potential advantages of a high intensity, small diameter, focussed probe. We discuss first the advantages for probes larger than the projected unit cell of the crystal under investigation. In this situation we are able to perform CBED on local regions of good crystallinity. Zone axis patterns often contain information which is very sensitive to thickness changes as small as 5nm. In conventional CBED, with a lOnm source, it is very likely that the information will be degraded by thickness averaging within the illuminated area.

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