Ultra-Clean and High Performance Substrates for Large Area Flexible Electronics

2018 ◽  
Author(s):  
Valentijn von Morgen
Keyword(s):  
Flexible Electronics ◽  
High Performance ◽  
Large Area

scholarly journals High-performance printed electronics based on inorganic semiconducting nano to chip scale structures

2020 ◽  
Vol 7 (1) ◽  
Author(s):  
Abhishek Singh Dahiya ◽  
Dhayalan Shakthivel ◽  
Yogeenth Kumaresan ◽  
Ayoub Zumeit ◽  
Adamos Christou ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
High Performance ◽  
Printed Electronics ◽  
Functional Materials ◽  
Transfer Printing ◽  
Semiconducting Materials ◽  
Large Area ◽  
Contact Printing ◽  
Scale Structures ◽  
Silicon Based

Abstract The Printed Electronics (PE) is expected to revolutionise the way electronics will be manufactured in the future. Building on the achievements of the traditional printing industry, and the recent advances in flexible electronics and digital technologies, PE may even substitute the conventional silicon-based electronics if the performance of printed devices and circuits can be at par with silicon-based devices. In this regard, the inorganic semiconducting materials-based approaches have opened new avenues as printed nano (e.g. nanowires (NWs), nanoribbons (NRs) etc.), micro (e.g. microwires (MWs)) and chip (e.g. ultra-thin chips (UTCs)) scale structures from these materials have been shown to have performances at par with silicon-based electronics. This paper reviews the developments related to inorganic semiconducting materials based high-performance large area PE, particularly using the two routes i.e. Contact Printing (CP) and Transfer Printing (TP). The detailed survey of these technologies for large area PE onto various unconventional substrates (e.g. plastic, paper etc.) is presented along with some examples of electronic devices and circuit developed with printed NWs, NRs and UTCs. Finally, we discuss the opportunities offered by PE, and the technical challenges and viable solutions for the integration of inorganic functional materials into large areas, 3D layouts for high throughput, and industrial-scale manufacturing using printing technologies.

scholarly journals Direct roll transfer printed silicon nanoribbon arrays based high-performance flexible electronics

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Ayoub Zumeit ◽  
Abhishek Singh Dahiya ◽  
Adamos Christou ◽  
Dhayalan Shakthivel ◽  
Ravinder Dahiya
Keyword(s):  
Flexible Electronics ◽  
High Performance ◽  
Printed Electronics ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Single Step ◽  
High Yield ◽  
Transfer Printing ◽  
Large Area ◽  
Direct Printing

AbstractTransfer printing of high mobility inorganic nanostructures, using an elastomeric transfer stamp, is a potential route for high-performance printed electronics. Using this method to transfer nanostructures with high yield, uniformity and excellent registration over large area remain a challenge. Herein, we present the ‘direct roll transfer’ as a single-step process, i.e., without using any elastomeric stamp, to print nanoribbons (NRs) on different substrates with excellent registration (retaining spacing, orientation, etc.) and transfer yield (∼95%). The silicon NR based field-effect transistors printed using direct roll transfer consistently show high performance i.e., high on-state current (Ion) >1 mA, high mobility (μeff) >600 cm2/Vs, high on/off ratio (Ion/off) of around 106, and low hysteresis (<0.4 V). The developed versatile and transformative method can also print nanostructures based on other materials such as GaAs and thus could pave the way for direct printing of high-performance electronics on large-area flexible substrates.

scholarly journals Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelectronic devices

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Iñigo Bretos ◽  
Ricardo Jiménez ◽  
Monika Tomczyk ◽  
Enrique Rodríguez-Castellón ◽  
Paula M. Vilarinho ◽  
...  
Keyword(s):  
Lead Zirconate Titanate ◽  
Flexible Electronics ◽  
High Performance ◽  
Lead Zirconate ◽  
Ferroelectric Materials ◽  
Cmos Process ◽  
Concept Design ◽  
Large Area ◽  
Microelectronic Devices ◽  
Zirconate Titanate

Abstract Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound ─ morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT) ─ are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm−2 is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics.

Solution processed 1D polymer/SWCNT composite arrays for high-performance field effect transistors

2021 ◽  
Author(s):  
Xiaoyu Fan ◽  
Jingrun Yang ◽  
Bo Lei ◽  
Zhenghao Yang ◽  
Pengda Che ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Semiconducting Polymers ◽  
Large Area ◽  
Solution Processed

Semiconducting polythiophene polymers are promising materials for the generation of large-area and flexible electronics. However, field effect transistors (FETs) using semiconducting polymers as the channel material possess relatively poor mobility,...

scholarly journals High Performance Printed Electronics on Large Area Flexible Substrates

2020 ◽  
Author(s):  
Mahesh Soni ◽  
Dhayalan Shakthivel ◽  
Adamos Christou ◽  
Ayoub Zumeit ◽  
Nivasan Yogeswaran ◽  
...  
Keyword(s):  
High Performance ◽  
Printed Electronics ◽  
Flexible Substrates ◽  
Large Area

scholarly journals Design of a Sensitive Balloon Sensor for Safe Human–Robot Interaction

Sensors ◽  
2021 ◽  
Vol 21 (6) ◽  
pp. 2163
Author(s):  
Dongjin Kim ◽  
Seungyong Han ◽  
Taewi Kim ◽  
Changhwan Kim ◽  
Doohoe Lee ◽  
...  
Keyword(s):  
High Performance ◽  
Strain Sensor ◽  
High Sensitivity ◽  
Human Robot Interaction ◽  
Large Area ◽  
Tactile Sensors ◽  
Robot Interaction ◽  
Mechanical Crack ◽  
Flexible Strain Sensor ◽  
Contact Sensing

As the safety of a human body is the main priority while interacting with robots, the field of tactile sensors has expanded for acquiring tactile information and ensuring safe human–robot interaction (HRI). Existing lightweight and thin tactile sensors exhibit high performance in detecting their surroundings. However, unexpected collisions caused by malfunctions or sudden external collisions can still cause injuries to rigid robots with thin tactile sensors. In this study, we present a sensitive balloon sensor for contact sensing and alleviating physical collisions over a large area of rigid robots. The balloon sensor is a pressure sensor composed of an inflatable body of low-density polyethylene (LDPE), and a highly sensitive and flexible strain sensor laminated onto it. The mechanical crack-based strain sensor with high sensitivity enables the detection of extremely small changes in the strain of the balloon. Adjusting the geometric parameters of the balloon allows for a large and easily customizable sensing area. The weight of the balloon sensor was approximately 2 g. The sensor is employed with a servo motor and detects a finger or a sheet of rolled paper gently touching it, without being damaged.

Double-network hydrogel with adjustable surface morphology and multifunctional integration for flexible strain sensors

Soft Matter ◽  
2021 ◽  
Author(s):  
Yang Yu ◽  
Fengjin Xie ◽  
Xinpei Gao ◽  
Liqiang Zheng
Keyword(s):  
Surface Morphology ◽  
Flexible Electronics ◽  
High Performance ◽  
Strain Sensors ◽  
Next Generation ◽  
Double Network ◽  
Conductive Hydrogels

The next generation of high-performance flexible electronics has put forward new demands to the development of ionic conductive hydrogels. In recent years, many efforts have been made toward developing double-network...

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

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