Approaching DRAM performance by using microsecond-latency flash memory for small-sized random read accesses

2021 ◽  
Vol 14 (8) ◽  
pp. 1311-1324
Author(s):  
Tomoya Suzuki ◽  
Kazuhiro Hiwada ◽  
Hirotsugu Kajihara ◽  
Shintaro Sano ◽  
Shuou Nomura ◽  
...  

For applications in which small-sized random accesses frequently occur for datasets that exceed DRAM capacity, placing the datasets on SSD can result in poor application performance. For the read-intensive case we focus on in this paper, low latency flash memory with microsecond read latency is a promising solution. However, when they are used in large numbers to achieve high IOPS (Input/Output operations Per Second), the CPU processing involved in IO requests is an overhead. To tackle the problem, we propose a new access method combining two approaches: 1) optimizing issuance and completion of the IO requests to reduce the CPU overhead. 2) utilizing many contexts with lightweight context switches by stackless coroutines. These reduce the CPU overhead per request to less than 10 ns, enabling read access with DRAM-like overhead, while the access latency longer than DRAM can be hidden by the context switches. We apply the proposed method to graph algorithms such as BFS (Breadth First Search), which involves many small-sized random read accesses. In our evaluation, the large graph data is placed on microsecond-latency flash memories within prototype boards, and it is accessed by the proposed method. As a result, for the synthetic and real-world graphs, the execution times of the graph algorithms are 88--141% of those when all the data are placed in DRAM.

2016 ◽  
Vol 2016 (1) ◽  
pp. 000660-000665
Author(s):  
Anju Sharma ◽  
Preeth Sivakumar ◽  
Andrew Feigel ◽  
In Tae Bae ◽  
Lawrence P. Lehman ◽  
...  

Abstract In this paper, we present a detailed study on the effects of x-ray exposure on data corruption in commercially available NOR and NAND flash memory devices during x-ray inspection with a high-resolution Phoenix Nanomex system from GE. We investigated role of the x-ray tube voltage, tube current, device orientation, x-ray filters and photon energy. We explored the low exposure regime in detail when the first byte errors start occurring and also determined the absorbed dose for 100% byte errors. No data corruption was observed after the normal 2D x-ray inspection and CT scans of the NOR and NAND flash memory devices under study. However, increase in the tube voltage, tube current and/or the x-ray beam size resulted in byte errors which increased exponentially with the exposure time. The byte error rate was found to be much more sensitive to the tube voltage than the tube current. It was also affected by the device orientation with respect to the x-ray beam. The NAND flash memories were found to be more susceptible to data corruption from x-ray exposure than the NOR devices examined in this work. Some NOR devices were irradiated with the monochromatic x-rays from the CHESS synchrotron facility at Cornell University. Of all the photon energies used in this study, 12 keV x-ray irradiation resulted in the highest byte error rate. In this paper, we thus present a direct proof that it is the low-energy photon absorption that plays a major role in introducing bit errors in flash memories. Commonly available low-energy x-ray filters such as Cu and Al foils were found to be effective in preventing data corruption in such devices for long exposure time. Use of lower tube voltage, lower tube current, smaller x-ray spot size, short exposure time and low-energy x-ray filters, is recommended to prevent data corruption during 2D and 3D x-ray inspection of flash memory devices and other semiconductor devices in general.


2011 ◽  
Vol 403-408 ◽  
pp. 4311-4317
Author(s):  
Ki Young Lee ◽  
Joung Joon Kim ◽  
Myung Jae Lim ◽  
Kyu Ho Kim ◽  
Jeong Lae Kim

This paper proposed an efficient spatial Access method, called MDR-Tree (Mbr compression and Delayed write operation based R-Tree), that uses the node compression technique and the delayed write operation technique for flash memory embedded systems. The node compression technique of MDR-Tree increased the utilization of flash memory space by compressing the MBR of spatial data using relative coordinates and MBR size. Moreover, the delayed write operation technique reduced the number of write operations in flash memory by temporarily storing spatial data in the buffer and by reflecting them in flash memory at once instead of reflecting the insert, update and delete of spatial data in flash memory for each operation. Especially, the utilization of buffer space was enhanced by preventing the redundant storage of the same spatial data in the buffer.


2008 ◽  
Vol 14 (S3) ◽  
pp. 61-64 ◽  
Author(s):  
S.R.C. Pinto ◽  
P. Caldelas ◽  
A.G. Rolo ◽  
A. Chahboun ◽  
M.J.M. Gomes

Ge NCs have attracted considerable attention because of their potential applications in nonvolatile memory and integrated optoelectronics. A number of groups have already proposed integrate flash memories based on Ge NCs embedded SiO2 matrix. Since Al2O3 presents a high dielectric constant comparatively to SiO2, it is a good candidate to replace silica in flash memory systems, and therefore improve their performances. Moreover, Al2O3 presents good mechanical properties, and supports high temperature, which leads it to be an ideal material for Si processing conditions. However, a few studies have been reported on Ge NCs embedded in Al2O3 matrix.


Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1152
Author(s):  
Fei Chen ◽  
Bo Chen ◽  
Hongzhe Lin ◽  
Yachen Kong ◽  
Xin Liu ◽  
...  

Temperature effects should be well considered when designing flash-based memory systems, because they are a fundamental factor that affect both the performance and the reliability of NAND flash memories. In this work, aiming to comprehensively understanding the temperature effects on 3D NAND flash memory, triple-level-cell (TLC) mode charge-trap (CT) 3D NAND flash memory chips were characterized systematically in a wide temperature range (−30~70 °C), by focusing on the raw bit error rate (RBER) degradation during program/erase (P/E) cycling (endurance) and frequent reading (read disturb). It was observed that (1) the program time showed strong dependences on the temperature and P/E cycles, which could be well fitted by the proposed temperature-dependent cycling program time (TCPT) model; (2) RBER could be suppressed at higher temperatures, while its degradation weakly depended on the temperature, indicating that high-temperature operations would not accelerate the memory cells’ degradation; (3) read disturbs were much more serious at low temperatures, while it helped to recover a part of RBER at high temperatures.


Author(s):  
Juyoung Lee ◽  
Dong-Gwan Yoon ◽  
Jae-Min Sim ◽  
Yun-Heub Song

The effects of residual stress in a tungsten gate on a polysilicon channel in scaled 3D NAND flash memories were investigated using a technology computer-aided design simulation. The NAND strings with respect to the distance from the tungsten slit were also analyzed. The scaling of the spacer thickness and hole diameter induced compressive stress on the polysilicon channel. Moreover, the residual stress of polysilicon in the string near the tungsten slit had greater compressive stress than the string farther away. The increase in compressive stress in the polysilicon channel degraded the Bit-Line current (Ion) because of stress-induced electron mobility deterioration. Moreover, a threshold voltage shift (△Vth) occurred in the negative direction because of conduction band lowering.


2021 ◽  
Vol 16 (6) ◽  
pp. 884-890
Author(s):  
Jie Ding ◽  
Guoliang Yan ◽  
Fikru Adamu-Lema ◽  
Yinke Dou ◽  
Yan Chen ◽  
...  

The main component of the POM flash memories is a polyoxometalates (POMs) layer which is used as the floating gate. As a competitive candidate of NAND Flash, POM flash memories attract significant interest and intensive investigations which have been conducted on modelling its physical characteristics and electrical properties. In this paper, we report the development of a specific compact model extraction strategy for POM flash memory based on BSIM4 compact model, allowing the corresponding circuit performance investigation. POM flash compact models are extracted and optimized using genetic algorithm (GA) at the three POM flash redox states. The extracted models are in good agreement with both high drain and low drain bias TCAD simulations. For the first time, the extracted compact models are applied in the circuit simulation to investigate the circuit behaviour of POM flash cells. This will provide valuable guidance for the practical design using POM flash cells.


Nanoscale ◽  
2015 ◽  
Vol 7 (41) ◽  
pp. 17496-17503 ◽  
Author(s):  
Su-Ting Han ◽  
Ye Zhou ◽  
Bo Chen ◽  
Li Zhou ◽  
Yan Yan ◽  
...  

We report a flash memory consisting of metal NPs–molybdenum disulphide (MoS2) as a floating gate by introducing a metal NP (Ag, Au, Pt) monolayer underneath the MoS2 nanosheets.


2008 ◽  
Vol 8 (2) ◽  
pp. 510-517 ◽  
Author(s):  
Aykutlu Dâna ◽  
Imran Akca ◽  
Atilla Aydinli ◽  
Rasit Turan ◽  
Terje G. Finstad

Nanocrystals can be used as storage media for carriers in flash memories. The performance of a nanocrystal flash memory depends critically on the choice of nanocrystal size and density as well as on the choice of tunnel dielectric properties. The performance of a nanocrystal memory device can be expressed in terms of write/erase speed, carrier retention time and cycling durability. We present a model that describes the charge/discharge dynamics of nanocrystal flash memories and calculate the effect of nanocrystal, gate, tunnel dielectric and substrate properties on device performance. The model assumes charge storage in quantized energy levels of nanocrystals. Effect of temperature is included implicitly in the model through perturbation of the substrate minority carrier concentration and Fermi level. Because a large number of variables affect these performance measures, in order to compare various designs, a figure of merit that measures the device performance in terms of design parameters is defined as a function of write/erase/discharge times which are calculated using the theoretical model. The effects of nanocrystal size and density, gate work function, substrate doping, control and tunnel dielectric properties and device geometry on the device performance are evaluated through the figure of merit. Experimental data showing agreement of the theoretical model with the measurement results are presented for devices that has PECVD grown germanium nanocrystals as the storage media.


2013 ◽  
pp. 439-455 ◽  
Author(s):  
Pierre Olivier ◽  
Jalil Boukhobza ◽  
Eric Senn

NAND Flash memories gained a solid foothold in the embedded systems domain due to its attractive characteristics in terms of size, weight, shock resistance, power consumption, and data throughput. Moreover, flash memories tend to be less confined to the embedded domain, as it can be observed through the market explosion of flash-based storage systems (average growth of the NVRAM is reported to be about 69% up to 2015). In this chapter, the authors focus on NAND flash memory NVRAM. After a global presentation of its architecture and very specific constraints, they describe the different ways to manage flash memories in embedded systems which are 1) the use of a hardware Flash Translation Layer (FTL), or 2) a dedicated Flash File System (FFS) software support implemented within the embedded operating system kernel.


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