scholarly journals Estimation of Ge nanocrystals size by Raman, X-rays, and HRTEM techniques

2008 ◽  
Vol 14 (S3) ◽  
pp. 61-64 ◽  
Author(s):  
S.R.C. Pinto ◽  
P. Caldelas ◽  
A.G. Rolo ◽  
A. Chahboun ◽  
M.J.M. Gomes
Keyword(s):  
Flash Memory ◽  
Nonvolatile Memory ◽  
High Dielectric Constant ◽  
Memory Systems ◽  
X Rays ◽  
Processing Conditions ◽  
Flash Memories ◽  
Potential Applications ◽  
High Dielectric ◽  
Ge Nanocrystals

Ge NCs have attracted considerable attention because of their potential applications in nonvolatile memory and integrated optoelectronics. A number of groups have already proposed integrate flash memories based on Ge NCs embedded SiO2 matrix. Since Al2O3 presents a high dielectric constant comparatively to SiO2, it is a good candidate to replace silica in flash memory systems, and therefore improve their performances. Moreover, Al2O3 presents good mechanical properties, and supports high temperature, which leads it to be an ideal material for Si processing conditions. However, a few studies have been reported on Ge NCs embedded in Al2O3 matrix.

Analytical Electron Microscopy of Ferroelectric BaTiO3

1980 ◽  
Vol 38 ◽  
pp. 364-365
Author(s):  
M. L. Mecartney ◽  
R. Sinclair
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Analytical Electron Microscopy ◽  
X Rays ◽  
Energy Dispersive Analysis ◽  
Ferroelectric Domain Structure ◽  
Analytical Electron ◽  
The Subject ◽  
Commercial Sources ◽  
High Dielectric

Ferroelectric BaTiO3 has been the subject of TEM investigations since the early 1960’s(1,2). However most attention has been focussed on the ferroelectric domain structure in single crystals. This current work involves the analysis of polycrystalline, ferroelectric BaTiO3 from various commercial sources. This material is used for high capacitance capacitors because of its high dielectric constant. Various dopants (Zr and Bi oxides predominantly) must be added to stabilize the high dielectric constant over a range of temperatures(3). Impurities such as Al2O3 and SiO2 can also be present due to ceramic processing procedures. An analysis of this material was performed using TEM and energy dispersive analysis of x-rays (EDAX) in order to understand better the effects of these dopants and impurities on the structure and chemical composition of BaTiO3.

scholarly journals Bismuth titanate nanoparticles dispersed polyacrylates

2004 ◽  
Vol 19 (8) ◽  
pp. 2343-2348 ◽  
Author(s):  
Wei-Fang Su ◽  
Jiann-Fong Lee ◽  
Ming-Yao Chen ◽  
Ron-Ming Ho
Keyword(s):  
Optical Waveguides ◽  
Bismuth Titanate ◽  
High Dielectric Constant ◽  
Coefficient Of Thermal Expansion ◽  
Sol Gel ◽  
Polymer Composition ◽  
Sol Gel Process ◽  
Potential Applications ◽  
High Dielectric

We successfully dispersed amorphous bismuth titanate nanoparticles (<50 nm)in situ in poly-hydroxy ethyl methacrylate via a sol-gel process. Since less than 20% of the polymer composition is bismuth titanate by weight, the material exhibits high refractive indices (>1.6) and good optical transparency (>90% transmittance from 530 to 800 nm). Furthermore, this highly cross-linked material has an improved thermal stability and a lower coefficient of thermal expansion than that of neat polymers. The material also displays a high dielectric constant (>10) without ferroelectricity. Thus the material has potential applications in optical lenses, optical waveguides, and capacitors.

scholarly journals Temperature Impacts on Endurance and Read Disturbs in Charge-Trap 3D NAND Flash Memories

Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1152
Author(s):  
Fei Chen ◽  
Bo Chen ◽  
Hongzhe Lin ◽  
Yachen Kong ◽  
Xin Liu ◽  
...  
Keyword(s):  
Flash Memory ◽  
Temperature Effects ◽  
Memory Systems ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Flash Memories ◽  
Charge Trap ◽  
Fundamental Factor ◽  
Temperature Impacts ◽  
Raw Bit Error Rate

Temperature effects should be well considered when designing flash-based memory systems, because they are a fundamental factor that affect both the performance and the reliability of NAND flash memories. In this work, aiming to comprehensively understanding the temperature effects on 3D NAND flash memory, triple-level-cell (TLC) mode charge-trap (CT) 3D NAND flash memory chips were characterized systematically in a wide temperature range (−30~70 °C), by focusing on the raw bit error rate (RBER) degradation during program/erase (P/E) cycling (endurance) and frequent reading (read disturb). It was observed that (1) the program time showed strong dependences on the temperature and P/E cycles, which could be well fitted by the proposed temperature-dependent cycling program time (TCPT) model; (2) RBER could be suppressed at higher temperatures, while its degradation weakly depended on the temperature, indicating that high-temperature operations would not accelerate the memory cells’ degradation; (3) read disturbs were much more serious at low temperatures, while it helped to recover a part of RBER at high temperatures.

Effect of Different High-K Dielectrics on the Pt Nanocrystal Formation Statistics (size, density and area coverage) for Flash Memory Application

2011 ◽  
Vol 1288 ◽  
Author(s):  
Abhishek Misra ◽  
Sunny Sadana ◽  
Satya Suresh ◽  
Meenakshi Bhaisare ◽  
Senthil Srinivasan ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Surface Properties ◽  
Flash Memory ◽  
High Dielectric Constant ◽  
Area Coverage ◽  
High K ◽  
Nanocrystal Formation ◽  
High K Materials ◽  
High Dielectric ◽  
Intermetal Dielectric

ABSTRACTWe here present, metal nanocrystal (NC) formation statistics (size, density, occupancy or area coverage) on different high dielectric constant (high-K) materials which may be used as tunnel dielectric or intermetal dielectric in flash memory devices. Four important high-K materials viz. SiO2, Al2O3, HfO2 and Si3N4 are chosen for this purpose and the nanocrystal formation statistics has been found to be strongly dependent on dielectric. Among all the four dielectrics, smallest size nanocrystals with largest density are obtained on Al2O3 dielectric while on HfO2 bigger size nanocrystals are formed. This difference in nanocrystal size and density on different dielectrics is attributed to the different surface properties of these materials.

Flash Memory Scaling

MRS Bulletin ◽  
2004 ◽  
Vol 29 (11) ◽  
pp. 814-817 ◽  
Author(s):  
Al Fazio
Keyword(s):  
Data Storage ◽  
Flash Memory ◽  
Nonvolatile Memory ◽  
Three Dimensional ◽  
Memory Cell ◽  
Current Status ◽  
Memory Cells ◽  
Technology Scaling ◽  
Complex Structural ◽  
High Dielectric

AbstractIn order to meet technology scaling in the field of solid-state memory and data storage, the mainstream transistor-based flash technologies will start evolving to incorporate material and structural innovations. Dielectric scaling in nonvolatile memories is approaching the point where new approaches will be required to meet the scaling requirements while simultaneously meeting the reliability and performance requirements of future products. High-dielectric-constant materials are being explored as possible candidates to replace the traditional SiO2 and ONO (oxide/nitride/oxide) films used today in memory cells. Likewise, planar-based memory cell scaling is approaching the point where scaling constraints force exploration of new materials and nonplanar, three-dimensional scaling alternatives. This article will review the current status and discuss the approaches being explored to provide scaling solutions for future transistor floating-gate-based nonvolatile memory products. Based on the introduction of material innovations, it is expected that the planar transistor-based flash memory cells can scale through at least the end of the decade (2010) using techniques that are available today or projected to be available in the near future. More complex, structural innovations will be required to achieve further scaling.

High Dielectric Constant Hf-Ti-Sn-O Off-Axis Cosputtered Films

1998 ◽  
Vol 541 ◽  
Author(s):  
L. F. Schneemeyer ◽  
R. B. van Dover ◽  
R. M. Fleming
Keyword(s):  
Dielectric Constant ◽  
Figure Of Merit ◽  
High Dielectric Constant ◽  
Dielectric Materials ◽  
Processing Conditions ◽  
Leakage Currents ◽  
Film Properties ◽  
High Dielectric ◽  
Film Dielectric ◽  
Device Technology

AbstractNew Hf-Sn-Ti-O thin-film dielectric materials were explored using a compositional-spread approach. Thin films of composition Hf0.2Sn0.05Ti0.75O2 prepared at 250°C have excellent dielectric properties: 40-50 nm thick films with a dielectric constant of 40-60 were obtained, depending on the processing conditions, yielding a specific capacitance of 9-17 fF/µm2. Breakdown fields were measured to be about 4 MV/cm, yielding a Figure of Merit εε0Ebr=19 µC/cm2. Leakage currents, measured at 1 MV/cm, were in the range 10−7- 10−6 A/cm2. Film properties are strongly dependent on substrate temperature during deposition. Like their recently reported zirconium analogs, these materials are of interest for use in Si-IC device technology, for example as storage capacitors in DRAM.

scholarly journals Emerging Nonvolatile Memories to Go Beyond Scaling Limits of Conventional CMOS Nanodevices

2014 ◽  
Vol 2014 ◽  
pp. 1-10 ◽  
Author(s):  
Lei Wang ◽  
CiHui Yang ◽  
Jing Wen ◽  
Shan Gai
Keyword(s):  
Flash Memory ◽  
Nonvolatile Memory ◽  
Cmos Technology ◽  
Information Storage ◽  
Storage Device ◽  
Scaling Limits ◽  
Fundamental Limits ◽  
Reading Methods ◽  
Nonvolatile Memories ◽  
Potential Applications

Continuous dimensional scaling of the CMOS technology, along with its cost reduction, has rendered Flash memory as one of the most promising nonvolatile memory candidates during the last decade. With the Flash memory technology inevitably approaching its fundamental limits, more advanced storage nanodevices, which can probably overcome the scaling limits of Flash memory, are being explored, bringing about a series of new paradigms such as FeRAM, MRAM, PCRAM, and ReRAM. These devices have indeed exhibited better scaling capability than Flash memory while also facing their respective physical drawbacks. The consequent tradeoffs therefore drive the information storage device technology towards further advancement; as a result, new types of nonvolatile memories, including carbon memory, Mott memory, macromolecular memory, and molecular memory have been proposed. In this paper, the nanomaterials used for these four emerging types of memories and the physical principles behind the writing and reading methods in each case are discussed, along with their respective merits and drawbacks when compared with conventional nonvolatile memories. The potential applications of each technology are also briefly assessed.

Enhanced performance of supercapacitors by constructing a “mini parallel-plate capacitor” in an electrode with high dielectric constant materials

2020 ◽  
Vol 8 (32) ◽  
pp. 16661-16668
Author(s):  
Huayao Tu ◽  
Shouzhi Wang ◽  
Hehe Jiang ◽  
Zhenyan Liang ◽  
Dong Shi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Carbon Fiber ◽  
Parallel Plate ◽  
Sandwich Structure ◽  
High Dielectric Constant ◽  
Parallel Plate Capacitor ◽  
Plate Capacitor ◽  
Fiber Metal ◽  
High Dielectric ◽  
Mini Plate

The carbon fiber/metal oxide/metal oxynitride layer sandwich structure is constructed in the electrode to form a mini-plate capacitor. High dielectric constant metal oxides act as dielectric to increase their capacitance.

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