scholarly journals The Analysis Of Structure For The Multi-Layered Of Ge/TiO2 Films Prepared By The Differential Prressure Co-Sputtering

2015 ◽  
Vol 60 (2) ◽  
pp. 963-964
Author(s):  
Y. Adachi ◽  
S. Abe ◽  
K. Matsuda ◽  
M. Nose
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Photoelectron Spectroscopy ◽  
Composite Films ◽  
Differential Pressure ◽  
Tio2 Films ◽  
Micro Structure ◽  
X Ray ◽  
Lattice Fringe

Abstract We tried to fabricate the Ge/TiO2 composite films with the differential pressure (pumping) co-sputtering (DPCS) apparatus in order to improve the optical properties. In the study, the micro structure of these thin films has been evaluated. TEM image revealed that the thin film was alternately layered with TiO2 and Ge, lattice fringes were observed both of Ge layer and TiO2 layer. There were portions that lattice fringe of Ge was disturbed near the interface of Ge and TiO2. X-ray photoelectron spectroscopy elucidated that there were few germanium oxides and a part with the thin film after annealed.

scholarly journals X-ray Photoelectron Spectroscopy Analysis of Chitosan–Graphene Oxide-Based Composite Thin Films for Potential Optical Sensing Applications

Polymers ◽  
2021 ◽  
Vol 13 (3) ◽  
pp. 478
Author(s):  
Wan Mohd Ebtisyam Mustaqim Mohd Daniyal ◽  
Yap Wing Fen ◽  
Silvan Saleviter ◽  
Narong Chanlek ◽  
Hideki Nakajima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Graphene Oxide ◽  
Photoelectron Spectroscopy ◽  
Functional Group ◽  
Optical Sensing ◽  
Composite Thin Films ◽  
Cobalt Ions ◽  
X Ray ◽  
Sensing Applications

In this study, X-ray photoelectron spectroscopy (XPS) was used to study chitosan–graphene oxide (chitosan–GO) incorporated with 4-(2-pyridylazo)resorcinol (PAR) and cadmium sulfide quantum dot (CdS QD) composite thin films for the potential optical sensing of cobalt ions (Co2+). From the XPS results, it was confirmed that carbon, oxygen, and nitrogen elements existed on the PAR–chitosan–GO thin film, while for CdS QD–chitosan–GO, the existence of carbon, oxygen, cadmium, nitrogen, and sulfur were confirmed. Further deconvolution of each element using the Gaussian–Lorentzian curve fitting program revealed the sub-peak component of each element and hence the corresponding functional group was identified. Next, investigation using surface plasmon resonance (SPR) optical sensor proved that both chitosan–GO-based thin films were able to detect Co2+ as low as 0.01 ppm for both composite thin films, while the PAR had the higher binding affinity. The interaction of the Co2+ with the thin films was characterized again using XPS to confirm the functional group involved during the reaction. The XPS results proved that primary amino in the PAR–chitosan–GO thin film contributed more important role for the reaction with Co2+, as in agreement with the SPR results.

Thermochromic VO2 Thin Film Prepared by Post Annealing Treatment of V2O5 Thin Film

2009 ◽  
Vol 79-82 ◽  
pp. 747-750 ◽  
Author(s):  
Dong Qing Liu ◽  
Wen Wei Zheng ◽  
Hai Feng Cheng ◽  
Hai Tao Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transition ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Annealing Treatment ◽  
Simple Method ◽  
X Ray ◽  
Post Annealing ◽  
Vo2 Thin Films

Thermochromic vanadium dioxide (VO2) exhibits a semi-conducting to metallic phase transition at about 68°C, involving strong variations in electrical and optical properties. A simple method was proposed to prepare VO2 thin films from easily gained V2O5 thin films. The detailed thermodynamic calculation was done and the results show that V2O5 will decompose to VO2 when the post annealing temperature reaches 550°C at the atmospheric pressure of less than 0.06Pa. The initial V2O5 films were prepared by sol-gel method on fused-quartz substrates. Different post annealing conditions were studied. The derived VO2 thin film samples were characterized using X-ray diffraction and X-ray photoelectron spectroscopy. The electrical resistance and infrared emissivity of VO2 thin films under different temperatures were measured. The results show that the VO2 thin film derived from the V2O5 thin film annealed at 550°C for 10 hours is pure dioxide of vanadium without other valences. It was observed that the resistance of VO2 thin film with thickness about 600nm can change by 4 orders of magnitude and the 7.5-14μm emissivity can change by 0.6 during the phase transition.

scholarly journals Surface Stoichiometry and Optical Properties of Cux–TiyCz Thin Films Deposited by Magnetron Sputtering

Coatings ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 551 ◽  
Author(s):  
Avishek Roy ◽  
Arun Kumar Mukhopadhyay ◽  
Sadhan Chandra Das ◽  
Gourab Bhattacharjee ◽  
Abhijit Majumdar ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Metal Matrix ◽  
Optical Band Gap ◽  
Matrix Composites ◽  
X Ray ◽  
Peak Intensity ◽  
Ternary Carbide

Ternary carbide in metal matrix composites constitute a big challenge in the industry, and in this regard their surface treatment is one of the most important issues. Ternary carbide (CuxTiyCz, where x, y and z are integers) thin films are synthesized by magnetron sputtering and characterized with respect to the film depth. X-ray photoelectron spectroscopy (XPS) of Cu-2p and Ti-2p peaks shows the associated shake-up satellite peaks at a smaller film depth; the peak intensity is reduced at a higher depth. The relative intensity of Cu and Ti increases at a larger film depth. The optical band gap varies from 1.83 to 2.20 eV at different film depths.

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD

2012 ◽  
Vol 198-199 ◽  
pp. 28-31
Author(s):  
Chun Ya Li ◽  
Xi Feng Li ◽  
Long Long Chen ◽  
Ji Feng Shi ◽  
Jian Hua Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Deposition Temperature ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
X Ray ◽  
Glass Substrates

Under different growth conditions, silicon Oxide (SiOx) thin films were deposited successfully on Si (100) substrates and glass substrates by plasma enhanced chemical vapor deposition (PECVD). The thickness, refractive index and growth rate of the thin films were tested by ellipsometer. The effects of deposition temperature on the structure and properties of SiOx films were studied using X ray diffraction (XRD), X ray photoelectron spectroscopy (XPS) and UV-Visible spectroscopy. The results show that the SiOx films were amorphous at different deposition temperature. The peaks of Si2p and O1s shifted to higher binding energy with temperature increasing. The SiOx films had high transmissivity at the range of 400-900nm. By analyzing the observation and data, the influence of deposition parameters on the electrical properties and interface characteristics of SiOx thin film prepared by PECVD is systematically discussed. At last, SiOx thin film with excellent electrical properties and good interface characteristic is prepared under the relatively optimum parameters.

Photolysis and Photocatalysis of 1,4 Dichlorobenzene Using Sputtered TiO2 Thin Films

2012 ◽  
Vol 734 ◽  
pp. 215-225 ◽  
Author(s):  
Sawsan A. Mahmoud ◽  
Emre Yassitepe ◽  
S. Ismat Shah
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Aqueous Phase ◽  
Wavelength Range ◽  
Photoelectron Spectroscopy ◽  
X Ray Diffraction ◽  
Direct Photolysis ◽  
X Ray ◽  
Degradation Rates ◽  
Visible Irradiation

The rate of 1,4-dichlorobenzene (1,4-DCB) degradation in the aqueous phase was investigated under direct photolysis or photocatalysis in the presence of TiO2 thin film prepared by reactive sputtering using a metal Ti target and a reaction sputtering atmosphere of argon and oxygen. The prepared thin films were analyzed by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). XPS confirmed the presence of completely oxidized TiO2 films whereas XRD showed that the films contained a mixture of rutile and anatase phases with rutile being approximately 30% of the total volume. Two lamps, both of the same power but different wavelength range were employed as irradiation sources. Photocatalysis showed faster removal of 1,4-DCB as compared to direct photolysis. The complete degradation was attained using the freshly prepared TiO2 sample. The intermediate produced during the photocatalysis was benzoquinone. Photolysis using visible irradiation was relatively slower and both benzoquinone and hydroquinone were formed as intermediates. Higher initial degradation rates were observed when the same film was re-used, most probably due to the effect of washing of the TiO2 thin films surface with methanol.

scholarly journals Improvement of Sensing Performance of Impedancemetric C2H2 Sensor Using SmFeO3 Thin-Films Prepared by a Polymer Precursor Method

Sensors ◽  
2019 ◽  
Vol 19 (4) ◽  
pp. 773 ◽  
Author(s):  
Tomohisa Tasaki ◽  
Satoko Takase ◽  
Youichi Shimizu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Precursor Solution ◽  
Particle Growth ◽  
Polymer Precursor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sensor Material ◽  
Perovskite Type

A sensitive an impedancemetric acetylene (C2H2) gas sensor device could be fabricated by using perovskite-type SmFeO3 thin-film as a sensor material. The uniform SmFeO3 thin-films were prepared by spin-coating and focusing on the effects of polymer precursor solutions. The prepared precursors and thin-films were characterized by means of thermal analysis,　Fourier-transform infrared spectroscopy, ultraviolet–visible spectroscopy, X-ray diffraction analysis, scanning electron microscopy and X-ray photoelectron spectroscopy . It was found that particle growth and increase in homogeneity of the prepared thin-film could be accelerated by the addition of acetyl acetone (AcAc) as a coordination agent in the polymer precursor solution. Moreover, the highly crystallized thin-film-based sensor showed good response properties and stabilities to a low C2H2 concentration between 0.5 and 2.0 ppm.

STUDY OF THE MICRO-STRUCTURE OF PtxSi ULTRA-THIN FILM

2011 ◽  
Vol 25 (21) ◽  
pp. 2925-2929 ◽  
Author(s):  
SHUANG LIU ◽  
CHARLES M. FALCO ◽  
ZHIYONG ZHONG
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Xps Analysis ◽  
X Ray Diffraction ◽  
Micro Structure ◽  
X Ray ◽  
Transmission Electron ◽  
Si Films ◽  
Pt Films ◽  
Thin Platinum

Ultra-thin platinum (Pt) films were deposited on Si (100) substrates at 160°C by magnetron sputtering and subsequently annealed to form silicides. The thickness of the Pt x Si films was found to be approximately 4 nm as determined by transmission electron microscopy (TEM). X-ray photoelectron spectroscopy (XPS) analysis shows that these films consist of PtSi and Pt 2 Si phases, and a multi-layer configuration of SiO x/ PtSi/Pt 2 Si/Si was detected by angle-resolved XPS. However, the Pt 3 Si phase was not detected by X-ray diffraction (XRD).

Structural, Electrical and Optical Properties of NiO Nanostructured Growth Using Thermal Wet Oxidation of Nickel Metal Thin Film

2017 ◽  
Vol 49 ◽  
pp. 56-65
Author(s):  
Dauda Abubakar ◽  
Naser Mahmoud Ahmed ◽  
Shahrom Mahmud
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Wave Length ◽  
Rf Sputtering ◽  
Optoelectronic Device ◽  
Wet Oxidation ◽  
Nickel Metal ◽  
X Ray ◽  
Ito Glass

The synthetic NiO nanostructures have been grown using thermal wet oxidation of metallic Ni thin films on ITO/glass by RF sputtering. The deposited Nickel thin films layer were oxidized in stream atmosphere at varying temperatures range of 400 °C to 700 °C inside furnace. Structural, surface morphology, electrical and the optical properties of NiO nanostructure were analysed by X-ray diffraction (XRD), Field effect scanning electron microscope (FESEM), energy dispersive X-ray (EDX), hall effects measurements and UV-Visible spectroscope measurements. XRD analysis proves that the NiO nanostructure has a cubic structure with orientation of the most intense peak at (200), and the film prepared 600 °C shows a better crystalline quality. FESEM and AFM results also prove that by increasing the oxidation temperature, the dimensions and roughness of the NiO nanoparticle thin layer increases. Also the oxidation rate appears higher. The optimum temperature for synthesizing high quality NiO with great stoichiometric and crystalline property was determined to be at 600 of wet oxidation. EDX results reveals only O and Ni present in the treated samples, indicating a pure NiO composition obtained. From UV-Vis absorption spectroscope of Tauc’s relationship, the bang gap was observed to increase with temperature at range of 3.29 – 4.09 eV. The effect of annealing was highlighted on the tunability of electrical property Ni thin films with both n-type and p-type behavior NiO as determine from hall measurement. The observed tunability of NiO thin film will ease way toward p-n homojunction realization for optoelectronic device applications of short wave length that involves photodetectors and LEDs

Uncertainty Evaluation in Measurement of Thickness of SiO2/Si Using X-Ray Photoelectron Spectroscopy

2014 ◽  
Vol 915-916 ◽  
pp. 833-837
Author(s):  
Jiang Wei Fan ◽  
Xiao Gang Han ◽  
Feng Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Measurement Method ◽  
Uncertainty Budget ◽  
Thickness Measurement ◽  
Quantitative Model ◽  
X Ray ◽  
Nominal Thickness ◽  
Measurement Of Thickness

Ultra-thin films of SiO2 (nominally 2, 4, 6, 8 and 10nm thick) on silicon, prepared by thermal oxidation, were investigated using x-ray photoelectron spectroscopy (XPS). The thickness of these thin films was obtained from a measurement of the photoelectron intensities originating from the substrate and the oxide layers by applying an appropriate quantitative model. The uncertainty budget of that thickness measurement method is given. The effective attenuation lengths or the corresponding electron inelastic mean free paths are of the most importance in the contribution of the uncertainties. For the SiO2 ultra-thin film with the nominal thickness of 2nm, it could generate 20% of the uncertainty.

scholarly journals Study of the Layer-Type BST Thin Film with X-ray Diffraction and X-ray Photoelectron Spectroscopy

Materials ◽  
2022 ◽  
Vol 15 (2) ◽  
pp. 578
Author(s):  
Agata Lisińska-Czekaj ◽  
Dionizy Czekaj
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Photoelectron Spectroscopy ◽  
Chemical Compositions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Barium Strontium ◽  
Bst Thin Film

In the present paper, results of X-ray photoelectron studies of electroceramic thin films of barium strontium titanate, Ba1−xSrxTiO3 (BST), composition deposited on stainless-steel substrates are presented. The thin films were prepared by the sol-gel method. A spin-coating deposition of BST layers with different chemical compositions was utilized so the layer-type structure of (0-2) connectivity was formed. After the deposition, the thin-film samples were heated in air atmosphere at temperature T = 700 °C for 1 h. The surfaces of BST thin films subjected to thermal treatment were studied by X-ray diffraction. X-ray diffraction measurements confirmed the perovskite-type phase for all grown thin-film samples. The oxidation states of the elements were examined by the X-ray photoelectron spectroscopy method. X-ray photoelectron spectroscopy survey spectra as well as high-resolution spectra (photo-peaks) of the main metallic elements, such as Ti, Ba, and Sr, were compared for the layer-type structures, differing in the deposition sequence of the barium strontium titanate layers constituting the BST thin film.

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