A process analysis for microchannel deformation and bonding strength by in-mold bonding of microfluidic chips

2015 ◽  
Vol 35 (3) ◽  
pp. 267-275 ◽  
Author(s):  
Chunpeng Chu ◽  
Bingyan Jiang ◽  
Laiyu Zhu ◽  
Fengze Jiang
Keyword(s):  
Bonding Strength ◽  
Process Analysis ◽  
Bonding Temperature ◽  
Bonding Time ◽  
Production Cycle ◽  
Microfluidic Chips ◽  
Bonding Pressure ◽  
Bonding Parameters ◽  
Bonding Technology ◽  
Assembly Technology

Abstract A novel combination of thermal bonding and in-mold assembly technology was created to produce microfluidic chips out of polymethylmethacrylate (PMMA), which is named “in-mold bonding technology”. In-mold bonding experiments of microfluidic chips were carried out to investigate the influences of bonding process parameters on the deformation and bonding strength of microchannels. The results show that bonding temperature has the greatest impact on the deformation of microchannels, while bonding pressure and bonding time have more influence on deformation in height than in top width. Considering the bonding strength, the bonding temperature and the bonding pressure have more impact than the bonding time. The time is crucial for the sealing of the chips. By setting the bonding parameters reasonably, the microchannel deformation is <10%, while the bonding strength of the chips is 350 kPa. The production cycle of the chip is reduced to <5 min.

Research on Bonding of PMMA Microfluidic Chip with Precisely Controlled Bonding Pressure

2011 ◽  
Vol 221 ◽  
pp. 8-14 ◽  
Author(s):  
Bing Yan Jiang ◽  
Zhou Zhou ◽  
Yao Liu
Keyword(s):  
Microfluidic Chip ◽  
Simulation Analysis ◽  
Bonding Temperature ◽  
Production Cycle ◽  
Microfluidic Chips ◽  
Bonding Pressure ◽  
Finite Element Software ◽  
Conventional Procedure ◽  
Bonding Technology ◽  
Increasing Temperature

Microfluidic chips have a great prospect in the field of biochemical analysis with advantages of fast processes, high flux and low consumption. Molding and bonding are separated by the conventional procedure of hot embossing and bonding, resulting in low automation and long production cycle. In order to reduce cycle time and achieve mass production, this paper proposed In-mold Bonding technology with precisely controlled bonding pressure by injection molding machine’s movement of core-pulling. So simulation analysis for bonding process of PMMA microfluidic chip was carried out using finite element software to study microchannel distortion at different bonding temperature and pressure. The results show that, at a certain bonding pressure, when bonding temperature was lower than glass transition temperature(Tg), microchannel distortion didn’t change significantly, when bonding temperature was higher than Tg, microchannel deformation increases with increasing temperature. Small microchannel distortion was obtained at a temperature of 108°C,which was recommended as the suitable bonding temperature.

Efficient Diffusion Bonding between BSCCO Superconducting Multifilamentary Tapes

2008 ◽  
Vol 580-582 ◽  
pp. 295-298
Author(s):  
Gui Sheng Zou ◽  
Yan Ju Wang ◽  
Ai Ping Wu ◽  
Hai Lin Bai ◽  
Nai Jun Hu ◽  
...  
Keyword(s):  
High Temperature ◽  
Diffusion Bonding ◽  
New Technology ◽  
Bonding Temperature ◽  
Interface Bonding ◽  
Bonding Pressure ◽  
Bonding Parameters ◽  
Efficient Diffusion ◽  
Bonding Technology ◽  
Multifilamentary Tapes

To improve the joining efficiency of Bi-Sr-Ca-Cu-O ( BSCCO) superconducting tapes, a new diffusion bonding technology with a direct uniaxial pressing at high temperature was developed to join 61-filament tapes. It was observed that bonding parameters such as bonding pressure and holding time, significantly affected the critical current ratio (CCRo). A peak CCRo value of 89 % for the lap-joined tapes was achieved at 3 MPa for 2 h when bonding temperature was 800 °C. Compared with the conventional diffusion bonding technology, this new technology remarkably shortened the fabrication period and improved the superconductivity of the joints. The bonding interface and microstructures of the joints were evaluated and correlated to the CCRo. An uniaxial pressing at high temperature was beneficial to interface bonding, and there was an optimal pressure value for the CCRo.

Optimization of Diffusion Bonding Process Parameters of Aluminium AA6061-Fly Ash Composites using Taguchi Method

2017 ◽  
Vol 9 (4) ◽  
Author(s):  
A. Sittaramane ◽  
G. Mahendran
Keyword(s):  
Fly Ash ◽  
Taguchi Method ◽  
Process Parameters ◽  
Diffusion Bonding ◽  
Bonding Strength ◽  
Bonding Temperature ◽  
Bonding Process ◽  
Bonding Pressure ◽  
Bonding Parameters ◽  
Response Table

This paper focused to determine optimal bonding parameters based on Taguchi method for maximizing bonding strength. The experiments were conducted on diffusion bonding machine using aluminium fly ash (AFA) composites. Three bonding parameters such as temperature, pressure and time, each at three levels were examined. Taguchi L27 orthogonal array was used as a design of experiment. The response table and the analysis of variance (ANOVA) were calculated to determine which process parameters significantly affect the bonding strength and also the % contribution of each parameter. The results show that the combination of factors and their levels of A2B3C3 i.e. the bonding done at a temperature of 475°C with a pressure of 10 MPa and time for 20 minutes yielded the optimum i.e. maximum bonding strength. Finally, ANOVA results indicated that all three process parameters significantly affected the bonding strength with a maximum contribution from the bonding temperature (85.93%), followed by bonding time (12.6%) and bonding pressure (1.48%). It is also observed that the bonding strength of the diffusion bonding process can be improved effectively through this approach.

Low Temperature Anodic Bonding for MEMS Applications

2002 ◽  
Author(s):  
J. Wei ◽  
Z. P. Wang ◽  
L. Wang ◽  
G. Y. Li ◽  
Z. Q. Mo
Keyword(s):  
Low Temperature ◽  
Bonding Strength ◽  
Transition Period ◽  
Bonding Temperature ◽  
Testing Machine ◽  
Acoustic Microscopy ◽  
Anodic Bonding ◽  
Dominant Factor ◽  
Glass Wafer ◽  
Bonding Parameters

In this paper, anodic bonding between silicon wafer and glass wafer (Pyrex 7740) has been successfully achieved at low temperature. The bonding strength is measured using a tensile testing machine. The interfaces are examined and analyzed by scanning acoustic microscopy (SAM), scanning electron microscopy (SEM) and secondary ion mass spectrometry (SIMS). Prior to bonding, the wafers are cleaned in RCA solutions, and the surfaces become hydrophilic. The effects of the bonding parameters, such as bonding temperature, voltage, bonding time and vacuum condition, on bonding quality are investigated using Taguchi method, and the feasibility of bonding silicon and glass wafers at low temperature is explored. The bonding temperature used ranges from 200 °C to 300 °C. The sensitivity of the bonding parameters is analyzed and it is found that the bonding temperature is the dominant factor for the bonding process. Therefore, the effects of bonding temperature are investigated in detail. High temperatures cause high ion mobility and bonding current density, resulting in the short transition period to the equilibrium state. Almost bubble-free interfaces have been obtained. The bonded area increases with increasing the bonding temperature. The unbonded area is less than 1.5% within the whole wafer for bonding temperature between 200 °C to 300 °C. The bonding strength is higher than 10 MPa, and increases with the bonding temperature. Fracture mainly occurs inside the glass wafer other than in the interface when the bonding temperature is higher than 225 °C. SIMS results show that the chemical bonds of Si-O form in the interface. Higher bonding temperature results in more oxygen migration to the interface and more Si-O bonds. The bonding mechanisms consist of hydrogen bonding and Si-O chemical reaction.

Bonding Parameters of Anisotropic Conductive Adhesive Film and Peeling Strength

2005 ◽  
Vol 297-300 ◽  
pp. 918-926 ◽  
Author(s):  
Xu Chen ◽  
Jun Zhang ◽  
Chunlei Jiao ◽  
Yan Min Liu
Keyword(s):  
High Temperature ◽  
Adhesive Strength ◽  
Bonding Temperature ◽  
Curing Time ◽  
Post Processing ◽  
Bonding Pressure ◽  
Adhesive Film ◽  
Bonding Parameters ◽  
Anisotropic Conductive Adhesive ◽  
Peeling Strength

The effects of different bonding parameters-temperature, pressure, curing time, bonding temperature ramp and post-processing on the adhesive strengths of Anisotropic Conductive Adhesive Film (ACF) interconnection were investigated. The test results showed the adhesive strength increased as the bonding temperature increase. The curing time had great influence on the adhesive strength of ACF joints. The adhesive strengths increased as the bonding pressure increasing, but decreased if the bonding pressure was over 0.25MPa. The effects of different Teflon thickness on the pressure header and post-processing on adhesive strengths performance of ACF joints were studied. It was shown that the 90o peeling strength became deteriorated as the Teflon thickness increase. Different post-processing conditions showed that the specimens kept in 120oC chamber for 30 minutes had the best performance of the ACF interconnection. The environmental experiments of the thermal cycling (-40 - 125oC) and the high temperature/humidity (85oC, 85%RH) aging were used to evaluate the reliability of the specimens with different bonding parameters. It was shown that the high temperature/humidity was the harshest condition to the ACF bonding. The optimum bonding parameters were determined to obtain better peeling strength.

scholarly journals Process and Accelerated Aging Test of GANG Bonding for Gold-Plated TAB Outer Leads

1981 ◽  
Vol 8 (1-2) ◽  
pp. 27-36 ◽  
Author(s):  
M. Nitta ◽  
T. Tsuge ◽  
Y. Hiki ◽  
R. Kato
Keyword(s):  
High Reliability ◽  
Accelerated Aging ◽  
Bonding Time ◽  
Single Chip ◽  
Preheat Temperature ◽  
Bonding Pressure ◽  
Bonding Parameters ◽  
Pull Strength ◽  
Accelerated Aging Test ◽  
Aging Test

This paper presents the evaluation results of thermocompression GANG Bonding of gold-plated TAB outer leads to three kinds of metallized ceramic substrates. Gold-Selective Plating (GSP) substrates for multi-chip package, Thick Film (TF) substrates for multi-chip package and Single Chip Packages (SCP) which have a trimetal combination of refractory metal (tungsten), Nickel and Gold.The bonding parameters such as the bonding tool (thermode) temperature, pressure, bonding time and preheat temperature were examined on each substrate to get optimum values. As the result, a relation between pull strength and the lead deformation shows that the TAB leads should be bonded with 15–65 percent deformation, the recommended parameters are; the tool temperature of 380–430℃, the bonding pressure ranging from 35 to 45 kg/mm2, with the preheat temperature of 150℃ and the bonding time from 1.0 to 2.5 seconds.The evaluation of initial bondability shows that TAB GANG Bonding has the capability of excellent bonding strength; above 120 grams with standard deviation of less than 20 grams, and the necessity of OLB pads flatness; less than ±12μm for one ounce copper lead. The normal storage of the substrate and the lead does not affect the bondability. And the results of accelerated aging test of 125℃, 150℃ and 175℃ for more than 8,000 hours show that a lifetime of greater than 70 years at 65℃ operating temperature is predicted. The effective activation energy for the pull strength degradation is 0.86–1.05 eV. This is in reasonable agreement with predictions for interdiffusion of Cu–Au. And no significant degradation of the electric resistance was observed on the GSP samples.The feasibility and the high reliability of the GANG Bonding for gold-plated TAB outer leads were confirmed.

Study on the Glass Silicon Anodic Direct Bonding Parameters

2016 ◽  
Vol 1 (1) ◽  
pp. 71
Author(s):  
Li Jia ◽  
Guo Hao ◽  
Guo Zhiping ◽  
Miao Shujing ◽  
Wang Jingxiang
Keyword(s):  
Experimental Study ◽  
Wafer Bonding ◽  
Bonding Temperature ◽  
Bonding Process ◽  
Bonding Time ◽  
Experimental Results ◽  
Bonding Quality ◽  
Mems Packaging ◽  
Bonding Parameters ◽  
Test Platform

<p>By MEMS packaging test platform for bonding process of bonding temperature and bonding time, and test silicon specifications experimental study. Experimental results indicate that when the bonding voltage of 1200V, bonding temperature of 445<sup>0</sup>C to 455<sup>0</sup>C, bonding time is 60s,the void fraction is less than 5%.Glass and silicon wafer bonding quality can achieve the best. The experimental results in order to improve the glass silicon bonding quality provide the basis.</p>

Bonding Strength of W-Cu Joint by PECS Method

2007 ◽  
Vol 127 ◽  
pp. 271-276 ◽  
Author(s):  
Yasushi Fukuzawa ◽  
Shigeru Nagasawa ◽  
Shigehiko Takaoka
Keyword(s):  
Tensile Strength ◽  
Bonding Strength ◽  
Bonding Temperature ◽  
Bonding Pressure ◽  
Pulse Electric Current ◽  
Bonding System ◽  
Tungsten Surface ◽  
The Difference ◽  
Pulse Electric ◽  
Specimen Shape

To make the tungsten and copper joint, several methods has been tried using the diffusion bonding system. When the thin plating Ni layer was used as the interlayer on tungsten surface, it bonded with copper under low bonding temperature and short holding duration by the pulse electric current sintering (PECS) machine. The effects of bonding temperature, bonding duration time, bonding pressure and the difference of specimen shape on the bonding strength were investigated. The tensile strength of joints depended on these factors. Highest strength attained to the copper tensile strength.

Effect of Bonding Temperature on the Microstructure and Strength of the Joint between Magnesium AZ31 and Ti-6Al-4V Alloys Using Copper Coatings and Tin Interlayers

2017 ◽  
Vol 735 ◽  
pp. 34-41 ◽  
Author(s):  
Abdulaziz N. AlHazaa
Keyword(s):  
Photoelectron Spectroscopy ◽  
Bonding Temperature ◽  
Transient Liquid Phase ◽  
Joint Shear Strength ◽  
Bonding Pressure ◽  
X Ray ◽  
Bonding Parameters ◽  
Electron Probe Micro Analyzer ◽  
Copper Coatings ◽  
Magnesium Az31

Transient Liquid Phase (TLP) bonding was performed between Mg-AZ31 and Ti-6Al-4V alloys with various bonding temperatures using Cu coatings and Sn interlayers. The bonding parameters such as bonding pressure and bonding time were fixed at 1 MPa and 15 minutes respectively in order to study the effect of bonding temperature on the joint evolution. Bonds made at temperatures of 540, 560, 580 and 600 C showed good bond strength. The obtained bonds were investigated by Electron Probe Micro-analyzer EPMA and showed reaction layers and diffusion zones for all bonds made. The maximum joint shear strength of 78 MPa was obtained for bond made at 580 C. X-ray diffraction XRD and X-ray photoelectron spectroscopy XPS were taken for the fractured surfaces of bond made at 580 C. The analysis of the fractured surfaces found that the reaction layer contains Sn5Ti6 IMC in the titanium side and Mg2Cu IMC in the magnesium side where the fracture occurs at the diffusion zone in the mg side.

scholarly journals Research on the Glass Silicon Anodic Direct Bonding Parameters

2015 ◽  
Vol 16 (2) ◽  
pp. 291
Author(s):  
Jia Li ◽  
Guo Hao ◽  
Guo Zhiping ◽  
Miao Shujing
Keyword(s):  
Wafer Bonding ◽  
Bonding Temperature ◽  
Bonding Time ◽  
Anodic Bonding ◽  
Bonding Quality ◽  
Mems Packaging ◽  
Bonding Parameters ◽  
Test Platform ◽  
Wafer Size

<p>By MEMS packaging test platform for bonding process of bonding temperature and bonding time,and test silicon specifications experimental study.Firstly,according to the anodic bonding principle,the main factors to detemine the effect of bonding quality.Secodly,change the bonding temperature,bonding time,and test wafer size and other parameters,glass silicon bonding contrast test.Finally,the calculation and analysis of comparative test of each group is bonded porosity,summanrized the factors that affect the quality of the bonding and bonding to achieve the best results in the bonding conditions.Experimental results indicate that when the bonding voltage of 1200V,bonding temperature of 445-455c,bonding time is 60s,the void fractin is less than 5%.Glass and Silicon wafer bonding quality can achieve the best. The experimental results in order to improve the glass silicon bonding quaity provides the basis.</p>

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