scholarly journals Research on the Glass Silicon Anodic Direct Bonding Parameters

2015 ◽  
Vol 16 (2) ◽  
pp. 291
Author(s):  
Jia Li ◽  
Guo Hao ◽  
Guo Zhiping ◽  
Miao Shujing
Keyword(s):  
Wafer Bonding ◽  
Bonding Temperature ◽  
Bonding Time ◽  
Anodic Bonding ◽  
Bonding Quality ◽  
Mems Packaging ◽  
Bonding Parameters ◽  
Test Platform ◽  
Wafer Size

<p>By MEMS packaging test platform for bonding process of bonding temperature and bonding time,and test silicon specifications experimental study.Firstly,according to the anodic bonding principle,the main factors to detemine the effect of bonding quality.Secodly,change the bonding temperature,bonding time,and test wafer size and other parameters,glass silicon bonding contrast test.Finally,the calculation and analysis of comparative test of each group is bonded porosity,summanrized the factors that affect the quality of the bonding and bonding to achieve the best results in the bonding conditions.Experimental results indicate that when the bonding voltage of 1200V,bonding temperature of 445-455c,bonding time is 60s,the void fractin is less than 5%.Glass and Silicon wafer bonding quality can achieve the best. The experimental results in order to improve the glass silicon bonding quaity provides the basis.</p>

Study on the Glass Silicon Anodic Direct Bonding Parameters

2016 ◽  
Vol 1 (1) ◽  
pp. 71
Author(s):  
Li Jia ◽  
Guo Hao ◽  
Guo Zhiping ◽  
Miao Shujing ◽  
Wang Jingxiang
Keyword(s):  
Experimental Study ◽  
Wafer Bonding ◽  
Bonding Temperature ◽  
Bonding Process ◽  
Bonding Time ◽  
Experimental Results ◽  
Bonding Quality ◽  
Mems Packaging ◽  
Bonding Parameters ◽  
Test Platform

<p>By MEMS packaging test platform for bonding process of bonding temperature and bonding time, and test silicon specifications experimental study. Experimental results indicate that when the bonding voltage of 1200V, bonding temperature of 445<sup>0</sup>C to 455<sup>0</sup>C, bonding time is 60s,the void fraction is less than 5%.Glass and silicon wafer bonding quality can achieve the best. The experimental results in order to improve the glass silicon bonding quality provide the basis.</p>

A process analysis for microchannel deformation and bonding strength by in-mold bonding of microfluidic chips

2015 ◽  
Vol 35 (3) ◽  
pp. 267-275 ◽  
Author(s):  
Chunpeng Chu ◽  
Bingyan Jiang ◽  
Laiyu Zhu ◽  
Fengze Jiang
Keyword(s):  
Bonding Strength ◽  
Process Analysis ◽  
Bonding Temperature ◽  
Bonding Time ◽  
Production Cycle ◽  
Microfluidic Chips ◽  
Bonding Pressure ◽  
Bonding Parameters ◽  
Bonding Technology ◽  
Assembly Technology

Abstract A novel combination of thermal bonding and in-mold assembly technology was created to produce microfluidic chips out of polymethylmethacrylate (PMMA), which is named “in-mold bonding technology”. In-mold bonding experiments of microfluidic chips were carried out to investigate the influences of bonding process parameters on the deformation and bonding strength of microchannels. The results show that bonding temperature has the greatest impact on the deformation of microchannels, while bonding pressure and bonding time have more influence on deformation in height than in top width. Considering the bonding strength, the bonding temperature and the bonding pressure have more impact than the bonding time. The time is crucial for the sealing of the chips. By setting the bonding parameters reasonably, the microchannel deformation is <10%, while the bonding strength of the chips is 350 kPa. The production cycle of the chip is reduced to <5 min.

Low Temperature Anodic Bonding for MEMS Applications

2002 ◽  
Author(s):  
J. Wei ◽  
Z. P. Wang ◽  
L. Wang ◽  
G. Y. Li ◽  
Z. Q. Mo
Keyword(s):  
Low Temperature ◽  
Bonding Strength ◽  
Transition Period ◽  
Bonding Temperature ◽  
Testing Machine ◽  
Acoustic Microscopy ◽  
Anodic Bonding ◽  
Dominant Factor ◽  
Glass Wafer ◽  
Bonding Parameters

In this paper, anodic bonding between silicon wafer and glass wafer (Pyrex 7740) has been successfully achieved at low temperature. The bonding strength is measured using a tensile testing machine. The interfaces are examined and analyzed by scanning acoustic microscopy (SAM), scanning electron microscopy (SEM) and secondary ion mass spectrometry (SIMS). Prior to bonding, the wafers are cleaned in RCA solutions, and the surfaces become hydrophilic. The effects of the bonding parameters, such as bonding temperature, voltage, bonding time and vacuum condition, on bonding quality are investigated using Taguchi method, and the feasibility of bonding silicon and glass wafers at low temperature is explored. The bonding temperature used ranges from 200 °C to 300 °C. The sensitivity of the bonding parameters is analyzed and it is found that the bonding temperature is the dominant factor for the bonding process. Therefore, the effects of bonding temperature are investigated in detail. High temperatures cause high ion mobility and bonding current density, resulting in the short transition period to the equilibrium state. Almost bubble-free interfaces have been obtained. The bonded area increases with increasing the bonding temperature. The unbonded area is less than 1.5% within the whole wafer for bonding temperature between 200 °C to 300 °C. The bonding strength is higher than 10 MPa, and increases with the bonding temperature. Fracture mainly occurs inside the glass wafer other than in the interface when the bonding temperature is higher than 225 °C. SIMS results show that the chemical bonds of Si-O form in the interface. Higher bonding temperature results in more oxygen migration to the interface and more Si-O bonds. The bonding mechanisms consist of hydrogen bonding and Si-O chemical reaction.

Anodic Bonding of Silicon-Pyrex and Silicon-Soda Lime Glass at Room Temperature

2014 ◽  
Vol 1082 ◽  
pp. 420-423
Author(s):  
Muhammad Hafiz Ab Aziz ◽  
Zaliman Sauli ◽  
Vithyacharan Retnasamy ◽  
Hussin Kamarudin ◽  
Wan Mokhdzani Wan Norhaimi ◽  
...  
Keyword(s):  
Bond Strength ◽  
Wafer Bonding ◽  
Room Temperature ◽  
Bonding Temperature ◽  
Soda Lime ◽  
Anodic Bonding ◽  
Soda Lime Glass ◽  
Cleaning Process ◽  
Mems Devices ◽  
Before And After

Silicon wafer bonding opens possibilities in creating MEMS devices and anodic bonding is found to be the most relevant wafer bonding technique process in constructing and packaging MEMS. This paper reports on the bond strength comparison between silicon and different glass based materials via anodic bonding. Two types of glass based surface used pyrex and soda lime glass. Bonding temperature is set at room temperature while a high direct current voltage of 15kV. Experiments were carried out using an in-house designed anodic bonder and the bond strength were measured using a bond strength tester. The anodic approach process was done in two sets which are before and after the cleaning process for each sample. Results show that all samples showed higher bond strength after the cleaning process. Silicon-soda lime glass have higher bonding strength of 1950 Pa compared to silicon-pyrex bonding which only gives 1850 Pa of bond strength.

A Study on Vacuum Diffusion Bonding of as-Extruded AZ31 Magnesium Alloy

2011 ◽  
Vol 121-126 ◽  
pp. 10-14
Author(s):  
Fei Lin ◽  
Tie Peng Li ◽  
Lu Lu Sun ◽  
Qing Sen Meng
Keyword(s):  
Diffusion Bonding ◽  
Diffusion Theory ◽  
Bonding Temperature ◽  
Holding Time ◽  
Atomic Diffusion ◽  
Hardness Testing ◽  
Joint Shear Strength ◽  
Bonding Quality ◽  
Diffusion Temperature

In this investigation a study on vacuum diffusion bonding of as-extruded AZ31 magnesium alloys was carried out according to atomic diffusion theory. The bonding quality of the joints was checked by microstructure analysis, shear test and micro-hardness testing. The results showed that the diffusion temperature and holding time had a great effect on the the bonding quality of the joints. The maximum of joint shear strength was 76.2MPa with the bonding temperature being 420°C and the holding time reaching 90min.

The Optimization of Wire Bonding Parameters and Quality Prediction Model Based on Neural Network

2012 ◽  
Vol 542-543 ◽  
pp. 976-980 ◽  
Author(s):  
Xiao Dan Guan ◽  
Gang Chen ◽  
Wan Lei Liang
Keyword(s):  
Neural Network ◽  
Prediction Model ◽  
Structural Parameters ◽  
Wire Bonding ◽  
Quality Prediction ◽  
Bonding Quality ◽  
Bonding Parameters ◽  
The Neural Network ◽  
Neural Network Algorithm

In this article, the parameters affecting the quality of wire bonding are analyzed by orthogonal testing with the methods of variance analysis and F tests. By analyzing the results, parameters that have a major impact on the quality of wire bonding are optimized. Because the relationship is complicated and non-linear between the impacting parameters and bonding quality, this article introduces a neural network algorithm of BPNN to build a model describing it. The structural parameters of the neural network are identified and a quality prediction model of wire bonding is established in this article. The model is validated, the results show that this proposed model has higher precision and it can accurately reflect the trends of the bonding quality indicators.

scholarly journals High-Temperature Diffusion Bonding of Ti–6Al–4V and Super-Duplex Stainless Steel Using a Cu Interlayer Embedded with Alumina Nanoparticles

2020 ◽  
Vol 4 (1) ◽  
pp. 3 ◽  
Author(s):  
Kavian O. Cooke ◽  
Anthony Richardson ◽  
Tahir I. Khan ◽  
Muhammad Ali Shar
Keyword(s):  
Stainless Steel ◽  
Duplex Stainless Steel ◽  
Intermetallic Compounds ◽  
Bonding Temperature ◽  
Bonding Time ◽  
Alumina Nanoparticles ◽  
Al2o3 Nanoparticles ◽  
Super Duplex Stainless Steel ◽  
Bonding Parameters ◽  
Cu Interlayer

In this study, Ti–6Al–4V alloy was diffusion bonded to super-duplex stainless steel (SDSS) using an electrodeposited Cu interlayer containing alumina nanoparticles to determine the effects of bonding parameters on the microstructural evolution within the joint region. The results of the study showed that the homogeneity of the joint is affected by the bonding time and bonding temperature. The results also showed that when a Cu/Al2O3 interlayer is used, Ti–6Al–4V alloy can be successfully diffusion bonded to SDSS at temperatures above 850 °C. The combination of longer bonding time and high bonding temperature leads to the formation of various intermetallic compounds within the interface. However, the presence of the Al2O3 nanoparticles within the interface causes a change in the volume, size, and shape of the intermetallic compounds formed by pinning grain boundaries and restricting grain growth of the interlayer. The variation of the chemical composition and hardness across the bond interface confirmed a better distribution of hard phases within the joint center when a Cu/Al2O3 interlayer was used.

Influence of film thickness of Ti coating on bonding quality of glass with PET

2012 ◽  
Vol 28 (9) ◽  
pp. 705-709 ◽  
Author(s):  
H X Liu ◽  
K Wang ◽  
C Zhang ◽  
P Li ◽  
Y Y Gao ◽  
...  
Keyword(s):  
Film Thickness ◽  
Bonding Quality

Sol-Gel Coating Facilitating Si-to-Si Wafer Bonding at Low Temperature

2005 ◽  
Author(s):  
J. Wei ◽  
S. S. Deng ◽  
C. M. Tan
Keyword(s):  
Low Temperature ◽  
Bond Strength ◽  
Wafer Bonding ◽  
Intermediate Layer ◽  
Bonding Temperature ◽  
Sol Gel ◽  
Bond Quality ◽  
Bubble Generation ◽  
High Bond ◽  
High Bond Strength

Silicon-to-silicon wafer bonding by sol-gel intermediate layer has been performed using acid-catalyzed tetraethylthosilicate-ethanol-water sol solution. High bond strength near to the fracture strength of bulk silicon is obtained at low temperature, for example 100°C. However, The bond efficiency and bond strength of this intermediate layer bonding sharply decrease when the bonding temperature increases to elevated temperature, such as 300 °C. The degradation of bond quality is found to be related to the decomposition of residual organic species at elevated bonding temperature. The bubble generation and the mechanism of the high bond strength at low temperature are exploited.

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