Structural and wavelength dependent optical study of thermally evaporated Cu2Se thin films

2020 ◽  
Vol 75 (8) ◽  
pp. 781-788
Author(s):  
Brijesh Kumar Yadav ◽  
Pratima Singh ◽  
Chandreshvar Prasad Yadav ◽  
Dharmendra Kumar Pandey ◽  
Dhananjay Singh
Keyword(s):  
Thin Films ◽  
Near Infrared ◽  
Initial Step ◽  
Optical Characterization ◽  
X Ray Diffraction ◽  
Mean Values ◽  
Raman Spectroscopic ◽  
Morphological Studies ◽  
Evaporation Technique

AbstractThe present work encloses structural and optical characterization of copper (I) selenide (Cu2Se) thin films. The films having thickness 85 nm have been deposited using thermal evaporation technique in initial step of work. The structural and morphological studies of deposited thin films are then done by X-ray diffraction (XRD), scanning electron microscope (SEM), and surface profilometer measurements. Later on, ultraviolet-visible-near-infrared (UV-VIS-NIR) spectrophotometer and Raman spectroscopic measurements are performed for optical characterization of films. The structure and morphology measurements reveal that deposited material of films is crystalline. The optical band gap estimated from the optical transmission spectra of the film has been found 1.90 eV. The mean values of refractive index, extinction coefficient, real and imaginary dielectric constant are received 3.035, 0.594, 9.623, and 3.598, respectively. The obtained results are compared and analyzed for justification and application of Cu2Se thin films.

Structural and Optical Characterization of Zinc Telluride Thin Films

2013 ◽  
Vol 665 ◽  
pp. 254-262 ◽  
Author(s):  
J.R. Rathod ◽  
Haresh S. Patel ◽  
K.D. Patel ◽  
V.M. Pathak
Keyword(s):  
Thin Films ◽  
Extinction Coefficient ◽  
Nir Spectroscopy ◽  
Optical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Evaporation Technique ◽  
Film Form ◽  
Znte Thin Films

Group II-VI compounds have been investigated largely in last two decades due to their interesting optoelectronic properties. ZnTe, a member of this family, possesses a bandgap around 2.26eV. This material is now a day investigated in thin film form due to its potential towards various viable applications. In this paper, the authors report their investigations on the preparation of ZnTe thin films using vacuum evaporation technique and their structural and optical characterizations. The structural characterization, carried out using an X-ray diffraction (XRD) technique shows that ZnTe used in present case possesses a cubic structure. Using the same data, the micro strain and dislocation density were evaluated and found to be around 1.465×10-3lines-m2and 1.639×1015lines/m2respecctively. The optical characterization carried out in UV-VIS-NIR region reveals the fact that band gap of ZnTe is around 2.2eV in present case. In addition to this, it was observed that the value of bandgap decreases as the thickness of films increases. The direct transitions of the carries are involved in ZnTe. Using the data of UV-VIS-NIR spectroscopy, the transmission coefficient and extinction coefficient were also calculated for ZnTe thin films. Besides, the variation of extinction coefficient with wavelength has also been discussed here.

Effects of Annealing on Pulsed Laser Deposited TiO2 Thin Films

2013 ◽  
Vol 446-447 ◽  
pp. 306-311 ◽  
Author(s):  
Sudhanshu Dwivedi ◽  
Somnath Biswas
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Si Substrates ◽  
Morphological Studies ◽  
Atomic Force ◽  
Deposited Films ◽  
Type Crystal

Mixed phase TiO2 thin films of rutile and anatase type crystal orientations were deposited on Si substrates by pulsed laser deposition (PLD) technique. When annealed at 800°C at 1 mbar oxygen pressure for 3 h, the deposited films transform into a single phase of rutile type. Structural and morphological studies of the as-deposited and annealed films were performed with X-ray diffraction (XRD), Fourier transform infra-red spectroscopy (FTIR), Raman spectroscopy, and atomic force microscopy (AFM). Photoluminescence (PL) spectroscopy was used for optical characterization of the annealed thin films.

Study of Structural and Optical Properties of Non-Oxide Se90Cd10–xSbx(2 ≤ x ≤ 8) Chalcogenide Thin Films

2020 ◽  
Vol 12 (1) ◽  
pp. 116-119
Author(s):  
Nitesh Shukla ◽  
Pravin Kumar Singh ◽  
H. P. Pathak ◽  
D. K. Dwivedi
Keyword(s):  
Thin Films ◽  
Thermal Evaporation ◽  
Optical Characterization ◽  
Structural And Optical Properties ◽  
Allowed Transition ◽  
Clean Glass Substrate ◽  
Amorphous Nature ◽  
Evaporation Technique ◽  
The Impact

Thin films of Se90Cd10–xSbx (2 ≤ x ≤ 8) of thickness 0.4 microns were prepared on ultra-clean glass substrate by thermal evaporation technique. The vacuum level was 10–6 torr. This paper intends to investigate the impact of Sb concentration on the optical characterization. XRD measurement has been done to investigate the Structural characterization of the prepared thin films. XRD result indicates the prepared thin have amorphous nature. To analyze the optical characterization of the thin films the absorption spectra were recorded over 400–1100 nm wavelength range. In the present study the optical absorption follows direct allowed transition. An increase in photon energy causes an increase in absorption coefficient while extinction coefficient has been found to increase with an increase in frequency of the photons i.e., deceases with increase of wavelength. Optical bandgap (Eg) of thin films have been studied and an increase in it has been recorded with increasing Sb concentration.

Synthesis and Non-Destructive Characterization of Zinc Selenide Thin Films

2019 ◽  
Vol 74 (11) ◽  
pp. 993-999 ◽  
Author(s):  
Brijesh Kumar Yadav ◽  
Pratima Singh ◽  
Dharmendra Kumar Pandey
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Zinc Selenide ◽  
Near Infrared ◽  
Raman Spectroscopic ◽  
Curve Fit ◽  
Polynomial Curve ◽  
Evaporation Technique ◽  
Znse Thin Films ◽  
Fifth Order

AbstractThe present work encloses the deposition of three zinc selenide (ZnSe) thin films of thickness 175 nm, 243 nm, and 286 nm using thermal evaporation technique under a vacuum of 5 × 10−5 mbar. The deposited ZnSe thin films are characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), surface profilometer, ultraviolet (UV)-visible (Vis)-near-infrared (NIR) spectrophotometer and Raman spectroscopic measurements. The structure and morphology measurements reveal that the deposited ZnSe material is nanocrystalline having a cubic structure whose crystallinity increases with an increase in film thickness/evaporation rate. The optical band gap estimated from the optical transmission spectra of the films is found to be 2.62 eV, 2.60 eV, and 2.57 eV, respectively, which decreases with an increase in film thickness. The estimation and polynomial curve fit analysis of refractive index, extinction coefficient, and dielectric constant indicates that these physical quantities are fifth-order polynomial function of wavelength. The obtained results are compared and analysed for justification and application of ZnSe thin films.

Growth and morphological studies of NiO/CuO/ZnO based nanostructured thin films for photovoltaic applications

2014 ◽  
Vol 68 (11) ◽  
Author(s):  
Siddharth Joshi ◽  
Mrunmaya Mudigere ◽  
L. Krishnamurthy ◽  
G. Shekar
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Uv Spectroscopy ◽  
Layer By Layer ◽  
X Ray Diffraction ◽  
Semiconducting Materials ◽  
Morphological Studies ◽  
Layer Deposition ◽  
Ito Glass

AbstractAt present, inorganic semiconducting materials are the most economical and viable source for the renewable energy industry. The present work deals with the morphological and optical characterization of copper oxide (CuO) and zinc oxide (ZnO) thin films fabricated by layer by layer deposition on nickel oxide (NiO) coated indium tin oxide (ITO) glass by solution processing methods, mainly chemical bath deposition (CBD) and hydrothermal deposition (HTD) processes at room temperature. As a whole, the above inorganic composite materials (NiO/CuO/ZnO) can be applied in photovoltaic cells. An attempt has been made to study structural, morphological and absorption characteristics of NiO/CuO/ZnO heterojunction using state of the art techniques like X-ray diffraction (XRD), scanning electron microscopy (SEM), and UV spectroscopy. The energy band gaps of CuO and ZnO have also been calculated and discussed based on the UV spectroscopy measurements.

scholarly journals ZnO/CdS Bilayer used for Electrode in Photovoltaic Device

2011 ◽  
Vol 21 (4) ◽  
pp. 379
Author(s):  
Dang Tran Chien ◽  
Pham Duy Long ◽  
Pham Van Hoi
Keyword(s):  
Thin Films ◽  
Large Scale ◽  
Low Cost ◽  
Photovoltaic Cell ◽  
Bilayer Film ◽  
X Ray Diffraction ◽  
Strong Adhesion ◽  
Cds Thin Films ◽  
Evaporation Technique

In this article we present the fabrication and characterization of the nanoporous ZnO and/or ZnO/CdS thin films onto indium doped-tin oxide (ITO) substrates, based on the thermal evaporation technique followed by thermal treatment. The preparation method was relatively simple and low-cost for large scale uniform coating to produce clean, dense and strong adhesion to substrate thin films. The nanostructured ZnO and ZnO/CdS thin films were characterized by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The nanostructured ZnO/CdS bilayer film was used in a photo-electrochemical (PEC) cell as a working electrode and a Pt net as a counter electrode. The results show that the photovoltaic cell with nanostructured ZnO/CdS bilayer film electrode has significantly improved photoelectric capability in comparison with that of ZnO electrode.

Thickness dependent electrical characterization of electron beam evaporated n-type CdSe thin films

2010 ◽  
Vol 7 (2) ◽  
pp. 495-498
Author(s):  
S. R. Vishwakarma ◽  
Aneet Kumar Verma ◽  
Ravishankar Nath Tripathi ◽  
Rahul. Rahul
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electrical Characterization ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Electron Beam Evaporation Technique ◽  
Evaporation Technique ◽  
Different Thickness ◽  
Deposited Films

The prepared starting materials has composition Cd0.60Se0.40 was used to fabrication of thin films. Cadmium selenide thin films of different thickness (400nm-700nm) deposited by electron beam evaporation technique on well cleaned glass substrate at substrate temperature 300 K. The X-ray diffraction pattern confirmed that the prepared thin films of composition Cd 0.60Se 0.40 has polycrystalline in nature. The resistivity, conductivity, Hall mobility, carrier concentration of the deposited films were calculated of different films thickness..

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

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