scholarly journals The Influence of Oxygen Pressure on ZnO:Al Thin Films Properties Grown by Layer by Layer Growth Method at Magnetron Sputtering

2015 ◽  
Vol 16 (4) ◽  
pp. 667-674
Author(s):  
A.I. Ievtushenko ◽  
L.O. Klochkov ◽  
O.S. Lytvyn ◽  
V.M. Tkach ◽  
O.M. Kutsay ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Oxygen Pressure ◽  
Traditional Approach ◽  
Visible Spectrum ◽  
Layer Growth ◽  
Zno Films ◽  
Layer By Layer ◽  
Deposition Chamber ◽  
Glass Substrates ◽  
Growth Method

The influence of oxygen pressure in the deposition chamber on the structure, morphology, optical and electrical properties of aluminum doped ZnO films deposited by a layer by layer growth method in magnetron sputtering on glass substrates was studied. The effect of the application of the traditional one-step approach and our proposed layer by layer growth method in magnetron sputtering on the properties of doped by aluminum ZnO films was analyzed. It is found that with decreasing oxygen pressure in the deposition chamber improves the structure, increases transmittance in the visible spectrum of radiation and decreases resistivity of ZnO:Al films. It is shown that the application of layer by layer growth method in magnetron sputtering allows to grow the transparent conductive ZnO:Al films with higher performance parameters, compared with the films which condensed by traditional approach in magnetron sputtering. The layer by layer growth method allows to grown ZnO:Al films with electrical resistance at 6.1·10-4 Ohm·cm and transmission in the visible light of 95%, which is promising for their aplication in photovoltaic devices.

High quality ZnO films deposited by radio-frequency magnetron sputtering using layer by layer growth method

2010 ◽  
Vol 518 (16) ◽  
pp. 4529-4532 ◽  
Author(s):  
A.I. Ievtushenko ◽  
V.A. Karpyna ◽  
V.I. Lazorenko ◽  
G.V. Lashkarev ◽  
V.D. Khranovskyy ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Layer Growth ◽  
Radio Frequency Magnetron ◽  
Zno Films ◽  
Layer By Layer ◽  
Radio Frequency Magnetron Sputtering ◽  
High Quality ◽  
Growth Method

scholarly journals Engineering of TiO2 or ZnO—Graphene Oxide Nanoheterojunctions for Hybrid Solar Cells Devices

Photonics ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 75
Author(s):  
Duarte Carreira ◽  
Paulo A. Ribeiro ◽  
Maria Raposo ◽  
Susana Sério
Keyword(s):  
Graphene Oxide ◽  
Solar Cells ◽  
Fossil Fuels ◽  
Electrical Characterization ◽  
Modern Society ◽  
Clean Energy ◽  
Zno Films ◽  
Layer By Layer ◽  
Glass Substrates ◽  
Rc Circuit

It is currently of huge importance to find alternatives to fossil fuels to produce clean energy and to ensure the energy demands of modern society. In the present work, two types of hybrid solar cell devices were developed and characterized. The photoactive layers of the hybrid heterojunctions comprise poly (allylamine chloride) (PAH) and graphene oxide (GO) and TiO2 or ZnO films, which were deposited using the layer-by-layer technique and DC-reactive magnetron sputtering, respectively, onto fluorine-doped tin oxide (FTO)-coated glass substrates. Scanning electron microscopy evidenced a homogeneous inorganic layer, the surface morphology of which was dependent on the number of organic bilayers. The electrical characterization pointed out that FTO/(PAH/GO)50/TiO2/Al, FTO/(PAH/GO)30/ZnO/Al, and FTO/(PAH/GO)50/ZnO/Al architectures were the only ones to exhibit a diode behavior, and the last one experienced a decrease in current in a low-humidity environment. The (PAH/GO)20 impedance spectroscopy study further revealed the typical impedance of a parallel RC circuit for a dry environment, whereas in a humid environment, it approached the impedance of a series of three parallel RC circuits, indicating that water and oxygen contribute to other conduction processes. Finally, the achieved devices should be encapsulated to work successfully as solar cells.

Fabrication and Study of P-Type ZnO Films by RF Magnetron Sputtering of ZnO: In2O3 Powder Together with the N-Implantation

2012 ◽  
Vol 503-504 ◽  
pp. 350-353
Author(s):  
Mao Nan ◽  
Chun Yang Kong ◽  
Guo Ping Qin ◽  
Hai Bo Ruan
Keyword(s):  
Magnetron Sputtering ◽  
Hole Concentration ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Electrical Characteristics ◽  
Radio Frequency Magnetron Sputtering ◽  
Glass Substrates ◽  
Powder Target ◽  
Post Annealing ◽  
P Type

The N-In codoped p-type ZnO films with preferential orientation along (002) plane have been fabricated on quartz glass substrates using radio frequency magnetron sputtering technique of ZnO:In2O3 powder target combining with N-implantation. The samples annealed at 700°C deserved the optimal properties, the best of which exhibits electrical characteristics with the hole concentration of 4.04×1018 cm-3, the lowest resistivity of 1.15 Ωcm and Hall mobility of about 1.35 cm2V-1s-1. The effects of post-annealing on the microstructure and electronic properties of the codoped ZnO films is analyzed via SEM, XRD, XPS and Hall measurements system, and the trend of carrier concentration with annealing time is discussed theoretically.

STUDY ON THE STRUCTURE AND OPTICAL PROPERTIES OF Zn1-xCrxO FILMS BY RF MAGNETRON SPUTTERING TECHNIQUE

2008 ◽  
Vol 22 (30) ◽  
pp. 5279-5287
Author(s):  
J. JU ◽  
X. M. WU ◽  
L. J. ZHUGE
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Lattice Parameter ◽  
Crystal Lattice Parameter ◽  
Zno Films ◽  
Ultraviolet Region ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Cr Concentration

Zn 1-x Cr x O (x = 0, 0.03, 0.09) films were prepared by the radio frequency (RF) magnetron sputtering technique on Si (111) and quartz glass substrates. The effects of Cr -doping on the structural and optical properties of ZnO films have been discussed. The structural properties were investigated using X-ray diffraction (XRD) and scanning electron microscope (SEM) while optical properties using UV-Visible spectrophotometer (UV-VIS). XRD measurement revealed that the films were single phase and wurtzite structure with c-axis orientation. With the increase of Cr concentration, the intensity of the (002) peak and the grain size of the Zn 1-x Cr x O (x = 0, 0.03, 0.09) films decreased, and the Full Width at Half Maximum (FWHM) of (002) peak, the crystal lattice parameter c of Zn 1-x Cr x O (x = 0, 0.03, 0.09) films and the width of optical band gap increased, respectively. In the transmittance spectra of the Zn 1-x Cr x O (x = 0, 0.03, 0.09) films, the movement of the absorption edge of the ultraviolet region is the Burstein–Moss shift with the increase of Cr concentration.

scholarly journals Comparison of Fabrication Methods of Metal-Organic Framework Optical Thin Films

Nanomaterials ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 676 ◽  
Author(s):  
Yan Huang ◽  
Cheng-an Tao ◽  
Rui Chen ◽  
Liping Sheng ◽  
Jianfang Wang
Keyword(s):  
Thin Films ◽  
Self Assembly ◽  
Metal Organic Framework ◽  
Dip Coating ◽  
Layer Growth ◽  
Layer By Layer ◽  
Active Components ◽  
Growth Method ◽  
Metal Organic ◽  
University Of Oslo

Homogeneous metal-organic frameworks (MOFs)-based optical thin films have attracted increasing attention, since they can potentially be used as active components in optical/opt-electrical devices, and how to fabricate MOF thin films with high quality is the premise of practically using them. Herein, five fabrication methods of MOF films are systematically investigated and compared from the aspects of appearance, reflectivity, micro-morphology, surface roughness, and optical properties of the films. The famous robust Zr-based MOF, UiO-66 (UiO = University of Oslo) is chosen as a model, and the five methods are spin-coating, dip-coating, self-assembly, direct growth, and the stepwise layer by layer growth method. This study provides fundamental support for the application of MOFs in the optical field.

scholarly journals A New Alternative Electrochemical Process for a Pre-Deposited UPD-Mn Mediated the Growth of Cu(Mn) Film by Controlling the Time during the Cu-SLRR

Coatings ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 164
Author(s):  
Jau-Shiung Fang ◽  
Yu-Fei Sie ◽  
Yi-Lung Cheng ◽  
Giin-Shan Chen
Keyword(s):  
Film Growth ◽  
Atomic Layer ◽  
Open Circuit ◽  
Electrochemical Process ◽  
Layer Growth ◽  
Film Deposition ◽  
Layer By Layer ◽  
Cu Interconnects ◽  
Electrochemical Growth ◽  
Growth Method

A layer-by-layer deposition is essential for fabricating the Cu interconnects in a nanoscale-sized microelectronics because the gap-filling capability limits the film deposition step coverage on trenches/vias. Conventional layer-by-layer electrochemical deposition of Cu typically works by using two electrolytes, i.e., a sacrificial Pb electrolyte and a Cu electrolyte. However, the use of a Pb electrolyte is known to cause environmental issues. This study presents an Mn monolayer, which mediated the electrochemical growth of Cu(Mn) film through a sequence of alternating an underpotential deposition (UPD) of Mn, replacing the conventionally used UPD-Pb, with a surface-limited redox replacement (SLRR) of Cu. The use of the sacrificial Mn monolayer uniquely provides redox replacement by Cu2+ owing to the standard reductive potential differences. Repeating the sequence of the UPD-Mn followed by the SLRR-Cu enables Cu(Mn) film growth in an atomic layer growth manner. Further, controlling the time of open circuit potential (OCP) during the Cu-SLRR yields a technique to control the content of the resultant Cu(Mn) film. A longer OCP time caused more replacement of the UPD-Mn by the Cu2+, thus resulting in a Cu(Mn) film with a higher Cu concentration. The proposed layer-by-layer growth method offers a wet, chemistry-based deposition capable of fabricating Cu interconnects without the use of the barrier layer and can be of interest in microelectronics.

Effect of Substrate Temperature on the Properties of Al-Doped ZnO Films by RF Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 1293-1297 ◽  
Author(s):  
Yue Bo Wu ◽  
Sheng Lei ◽  
Zhe Wang ◽  
Ru Hai Zhao ◽  
Lei Huang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Higher Temperature ◽  
Doped Zno ◽  
Substrate Temperatures

The Al-doped ZnO (AZO) films were deposited on the glass substrates by RF magnetron sputtering at different substrate temperatures. The effect of substrate temperature on the structural, optical, and electrical properties of AZO films was investigated. The results indicate each of the films has a preferential c-axis orientation. The grain size increases with substrate temperature increasing. All the films exhibit a high transmittance in visible region and have sharp ultraviolet absorption characteristics. The resistivity decreases with substrate temperature increasing up to 250oC, then increases for higher temperature.

Zinc Oxide Thin Films Grown by RF Magnetron Sputtering on Nanostructure Al Thin Layer/Glass and Glass Substrates

2010 ◽  
Vol 177 ◽  
pp. 398-403
Author(s):  
T.Z. Liu ◽  
Shu Wang Duo ◽  
H. Zhang ◽  
M.J. Ran
Keyword(s):  
Magnetron Sputtering ◽  
Glass Substrate ◽  
Optical Transmission ◽  
Rf Magnetron Sputtering ◽  
Deposition Process ◽  
Zno Films ◽  
Primary Role ◽  
Growth Interface ◽  
Axis Orientation ◽  
Glass Substrates

ZnO films with random and highly (002)-preferred orientation were deposited on nanostructured Al (n-Al) /glass and glass substrates at room temperature by RF magnetron sputtering method, respectively. According to I (002)/I (100) ≈I annealed (002)/I annealed (100) ≈1.1 (on n-Al) and 2I annealed (002) /I (002) (on n-Al) ≈ I annealed (002) /I (002) (on glass) ≈3.1, the rough n-Al surface is suitable for the growth of a-axis orientation, and the appearance of the (100) peak plays a major role in decreasing the c-axis orientation. The average optical transmission of the film on n-Al layer increased significantly after annealing. At the same time, the growth mode and E g of ZnO films were discussed. On n-Al layer/glass substrate, it is not easy for the growth interface to form the smooth surface during the deposition process and Stranski Krstanov plays a primary role on the deposition of the films. Due to the significant increase of the interplanar spacing d (101), the band gaps for as-grown and annealed films grown on n-Al decreased, comparing with that of the film deposited on glass substrate.

Influence of Substrate Temperature on the Characteristics of Zinc Oxide Thin Films Deposited by Magnetron Sputtering

2012 ◽  
Vol 502 ◽  
pp. 111-115
Author(s):  
J.H. Gu ◽  
Z.Y. Zhong ◽  
X. He ◽  
J. Hou ◽  
C.Y. Yang
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Spectrum ◽  
Optical Characteristics ◽  
Zno Thin Films ◽  
Zno Films ◽  
Sintered Ceramic ◽  
Influence Of Substrate

Zinc oxide (ZnO) thin films were deposited by RF magnetron sputtering on glass substrates employing a sintered ceramic target and pure argon gas. The influence of substrate temperature on microstructure and optical characteristics of the deposited films were investigated by X-ray diffractometer (XRD) and spectrophotometer. The results demonstrate that all the ZnO films have preferred orientation along (002) direction. The substrate temperature significantly affects the crystalline quality and optical characteristics of the ZnO thin films. With the increase of substrate temperature, the mean grain size, lattice spacing and optical bandgap of the films increase, the dislocation density and micro strain decrease, and the average transmitance in the wavelength range of the visible spectrum also increases.

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