Advanced epitaxial Si and GexSi1−x multiprocessing for semiconductor device technologies

1990 ◽  
Vol 5 (6) ◽  
pp. 1159-1162 ◽  
Author(s):  
Mehrdad M. Moslehi ◽  
Cecil J. Davis
Keyword(s):  
Gas Flow ◽  
Microwave Plasma ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Surface Cleaning ◽  
Growth Surface ◽  
Chemical Cleaning ◽  
Process Energy ◽  
Rate Ratios

A single-wafer multiprocessing technology has been developed based on the use of lamp heating and remote microwave plasma process energy sources for fabrication of in-situ-doped homoepitaxial Si and heteroepitaxial Si/GexSi1−x multilayer structures via chemical-vapor deposition. Some effective low-temperature (650°–800°C) processes were developed for in-situ pre-epitaxial growth surface cleaning. These chemical cleaning processes employ GeH4 + H2 or GeH4 + H2 + (HF or HCl) gas mixtures with very small GeH4-to-H2 gas flow rate ratios. Multilayer heteroepitaxial structures with controlled doping and Ge fractions consisting of strained Ge4Si1−x layers were fabricated and characterized.

Advanced Single-Wafer Sequential Multiprocessing Techniques for Semiconductor Device Fabrication

1989 ◽  
Vol 146 ◽  
Author(s):  
Mehrdad M. Moslehi ◽  
Cecil Davis
Keyword(s):  
Microwave Plasma ◽  
Semiconductor Device ◽  
Future Trend ◽  
Device Fabrication ◽  
Manufacturing Cost ◽  
Layer Transition ◽  
Device Structures ◽  
Equipment Utilization ◽  
Process Energy

ABSTRACTSingle-Wafer Integrated in-situ Multiprocessing (SWIM) is recognized as the future trend for advanced microelectronics production in flexible fast turn-around computer-integrated semiconductor manufacturing environments. The SWIM equipment technology and processing methodology offer enhanced equipment utilization, improved process reproducibility and yield, and reduced chip manufacturing cost. They also provide significant capabilities for fabrication of new and improved device structures. This paper describes the SWIM techniques and presents a novel single-wafer advanced vacuum multiprocessing technology developed based on the use of multiple process energy/activation sources (lamp heating and remote microwave plasma) for multilayer epitaxial and polycrystalline semiconductor as well as dielectric film processing. Based on this technology, multilayer in-situ-doped homoepitaxial silicon and heteroepitaxial strained layer Si/GexSil-x/Si structures have been grown and characterized. The process control and the ultimate interfacial abruptness of the layer-to-layer transition widths in the device structures prepared by this technology will challenge the MBE techniques in multilayer epitaxial growth applications.

Structural Defects of Silicon Epitaxy and Epi/Substrate Interface Related to Improper In-Situ Surface Cleaning at Low Temperatures

1990 ◽  
Vol 202 ◽  
Author(s):  
Tri-Rung Yew ◽  
Rafael Reif
Keyword(s):  
Defect Formation ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Surface Cleaning ◽  
Structural Defects ◽  
Plasma Cleaning ◽  
Substrate Interface ◽  
Silicon Epitaxy ◽  
Pressure Chemical

ABSTRACTThis paper investigates the defect formation at the epi/substrate interface and epitaxial layers due to an improper in–situ Ar or Ar/H2 plasma cleaning at 500–800 °C Deposition process was carried out immediately after the in–situ cleaning process by ultralow pressure chemical vapor deposition process (ULPCVD) from SiH4/H2. Characteristics of the defects and their relationship with damage or impurity contaminations at the interface are presented. Finally, an optimum cleaning condition which ensures high quality epitaxial growth is addressed.

Passivation of III-V Semiconductor Surfaces Using Light Assisted Integrated Processes

1994 ◽  
Vol 342 ◽  
Author(s):  
Olivier Dulac ◽  
Yves I. Nissim
Keyword(s):  
Field Effect ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Surface Cleaning ◽  
Film Deposition ◽  
Gaas Surface ◽  
Nitride Film ◽  
Semiconductor Surfaces ◽  
Silicon Nitride Film

ABSTRACTPassivation of III-V semiconductor surfaces and especially the GaAs surface has been studied for over two decades without significant breakthrough. However, III-V device performances are still often limited by surface properties. In particular field effect behaviour in GaAs has been impossible to obtain due to the Fermi level pinning at the surface of this material. This paper presents an integrated sequence of low thermal budget processes to provide contamination control at the GaAs surface leading to very promising field effect on GaAs.In-situ surface cleaning using a Distributed Electron Cyclotron Resonance Microwave plasma (DECR MMP) has been integrated with a thin dielectric film deposition facility using light assisted CVD technics. Photoluminescence results carried out on GaAs surfaces have demonstrated that exposure to a hydrogen plasma induces lower recombination rates on these surfaces. Bulk diffusion of hydrogen during this process can be controlled and eliminated using an integrated Rapid Thermal Annealing (RTA). Finally, in-situ encapsulation by a dielectric allows one to stabilize the electronic properties of the surface for passivation applications. A silicon nitride film deposited by a direct UV photolysis deposition process has been developed for this study and is presented here.

scholarly journals Catalyst-Less and Transfer-Less Synthesis of Graphene on Si(100) Using Direct Microwave Plasma Enhanced Chemical Vapor Deposition and Protective Enclosures

Materials ◽  
2020 ◽  
Vol 13 (24) ◽  
pp. 5630
Author(s):  
Rimantas Gudaitis ◽  
Algirdas Lazauskas ◽  
Šarūnas Jankauskas ◽  
Šarūnas Meškinis
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Microwave Plasma ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Hydrogen Gas ◽  
Synthesis Process ◽  
Synthesis Time ◽  
Graphene Layers

In this study, graphene was synthesized on the Si(100) substrates via the use of direct microwave plasma-enhanced chemical vapor deposition (PECVD). Protective enclosures were applied to prevent excessive plasma etching of the growing graphene. The properties of synthesized graphene were investigated using Raman scattering spectroscopy and atomic force microscopy. Synthesis time, methane and hydrogen gas flow ratio, temperature, and plasma power effects were considered. The synthesized graphene exhibited n-type self-doping due to the charge transfer from Si(100). The presence of compressive stress was revealed in the synthesized graphene. It was presumed that induction of thermal stress took place during the synthesis process due to the large lattice mismatch between the growing graphene and the substrate. Importantly, it was demonstrated that continuous horizontal graphene layers can be directly grown on the Si(100) substrates if appropriate configuration of the protective enclosure is used in the microwave PECVD process.

In situ diagnosis of chemical species for the growth of carbon nanotubes in microwave plasma-enhanced chemical vapor deposition

2002 ◽  
Vol 11 (1) ◽  
pp. 59-66 ◽  
Author(s):  
Yun Sung Woo ◽  
Duk Young Jeon ◽  
In Taek Han ◽  
Nae Sung Lee ◽  
Jae Eun Jung ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Species ◽  
Chemical Vapor

In-Situ Surface Cleaning of Ge(111) and Si(100) for Epitaxial Growth of Ge AT 300°C Using Remote Plasma Enhanced Chemical Vapor Deposition

1987 ◽  
Vol 102 ◽  
Author(s):  
S. V. Hattangady ◽  
R. A. Rudder ◽  
G. G. Fountain ◽  
D. J. Vitkavage ◽  
R. J. Markunas
Keyword(s):  
Vapor Deposition ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
High Energy ◽  
Surface Cleaning ◽  
High Energy Electron ◽  
New Approach ◽  
Wet Chemistry ◽  
Plasma Treatments

We have demonstrated low temperature (300°C) Ge epitaxy on Ge(111) and on Si(100) substrates. Critical to this epitaxy has been the use of wet chemistry to produce controlled, thin oxides on the substrates prior to loading into the reactor and an in-situ 300°C hydrogen plasma treatment to remove those oxides from the semiconductor surfaces. Reflection high energy electron diffraction shows the plasma treatments to be effective in producing clean, well-ordered surfaces. This represents a new approach for in-situ cleaning of Ge(111) and Si(100) surfaces.

Improvement in the Sensitivity of the Response of Diamond Thin Films to X-Ray

2007 ◽  
Vol 336-338 ◽  
pp. 1718-1721 ◽  
Author(s):  
Xiao Ming Liao ◽  
Jun Guo Ran ◽  
Li Gou ◽  
Jin Zhang ◽  
Bao Hui Su ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
High Sensitivity ◽  
Post Treatment ◽  
X Ray ◽  
Microwave Plasma Cvd ◽  
Higher Sensitivity

Due to some inferior performance of Chemical Vapor Deposition (CVD) diamond dosimeters, their applications are somewhat limited. The quality of diamond films was improved using Microwave Plasma CVD (MWPCVD) by the modified processes such as cyclic deposition and in-situ plasma post-treatment. The simple radiation dosimeters were fabricated in a sandwich configuration. Influence of purity and orientation of the diamond films on the sensitivity of the dosimeters was studied. The results indicate that the radiation dosimeters have high sensitivity to X-ray and the response of the devices is linear with the X-ray flux. The higher the purity of films is, the higher the resistivity and sensitivity are. The dosimeter based on [100] film has higher sensitivity than that based on [111] film. The dosimeter based on films prepared by cyclic deposition has higher sensitivity than that based on films prepared by the conventional deposition. The characterization of the response to X-ray also shows that in-situ oxygen plasma post-treatment leads to the higher sensitivity of dosimeters compared with in-situ nitrogen, hydrogen plasma post-treatments.

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