Advanced Single-Wafer Sequential Multiprocessing Techniques for Semiconductor Device Fabrication

1989 ◽  
Vol 146 ◽  
Author(s):  
Mehrdad M. Moslehi ◽  
Cecil Davis
Keyword(s):  
Microwave Plasma ◽  
Semiconductor Device ◽  
Future Trend ◽  
Device Fabrication ◽  
Manufacturing Cost ◽  
Layer Transition ◽  
Device Structures ◽  
Equipment Utilization ◽  
Process Energy

ABSTRACTSingle-Wafer Integrated in-situ Multiprocessing (SWIM) is recognized as the future trend for advanced microelectronics production in flexible fast turn-around computer-integrated semiconductor manufacturing environments. The SWIM equipment technology and processing methodology offer enhanced equipment utilization, improved process reproducibility and yield, and reduced chip manufacturing cost. They also provide significant capabilities for fabrication of new and improved device structures. This paper describes the SWIM techniques and presents a novel single-wafer advanced vacuum multiprocessing technology developed based on the use of multiple process energy/activation sources (lamp heating and remote microwave plasma) for multilayer epitaxial and polycrystalline semiconductor as well as dielectric film processing. Based on this technology, multilayer in-situ-doped homoepitaxial silicon and heteroepitaxial strained layer Si/GexSil-x/Si structures have been grown and characterized. The process control and the ultimate interfacial abruptness of the layer-to-layer transition widths in the device structures prepared by this technology will challenge the MBE techniques in multilayer epitaxial growth applications.

Advanced epitaxial Si and GexSi1−x multiprocessing for semiconductor device technologies

1990 ◽  
Vol 5 (6) ◽  
pp. 1159-1162 ◽  
Author(s):  
Mehrdad M. Moslehi ◽  
Cecil J. Davis
Keyword(s):  
Gas Flow ◽  
Microwave Plasma ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Surface Cleaning ◽  
Growth Surface ◽  
Chemical Cleaning ◽  
Process Energy ◽  
Rate Ratios

A single-wafer multiprocessing technology has been developed based on the use of lamp heating and remote microwave plasma process energy sources for fabrication of in-situ-doped homoepitaxial Si and heteroepitaxial Si/GexSi1−x multilayer structures via chemical-vapor deposition. Some effective low-temperature (650°–800°C) processes were developed for in-situ pre-epitaxial growth surface cleaning. These chemical cleaning processes employ GeH4 + H2 or GeH4 + H2 + (HF or HCl) gas mixtures with very small GeH4-to-H2 gas flow rate ratios. Multilayer heteroepitaxial structures with controlled doping and Ge fractions consisting of strained Ge4Si1−x layers were fabricated and characterized.

Behavior of contact-silicided TFSOI gate structures

1994 ◽  
Vol 52 ◽  
pp. 860-861
Author(s):  
N. David Theodore ◽  
Juergen Foerstner ◽  
Peter Fejes
Keyword(s):  
Semiconductor Device ◽  
Series Resistance ◽  
Field Effect Transistors ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
Continuous Layer ◽  
Buried Oxide ◽  
Device Structures ◽  
Thin Silicon

As semiconductor device dimensions shrink and packing-densities rise, issues of parasitic capacitance and circuit speed become increasingly important. The use of thin-film silicon-on-insulator (TFSOI) substrates for device fabrication is being explored in order to increase switching speeds. One version of TFSOI being explored for device fabrication is SIMOX (Silicon-separation by Implanted OXygen).A buried oxide layer is created by highdose oxygen implantation into silicon wafers followed by annealing to cause coalescence of oxide regions into a continuous layer. A thin silicon layer remains above the buried oxide (~220 nm Si after additional thinning). Device structures can now be fabricated upon this thin silicon layer.Current fabrication of metal-oxidesemiconductor field-effect transistors (MOSFETs) requires formation of a polysilicon/oxide gate between source and drain regions. Contact to the source/drain and gate regions is typically made by use of TiSi2 layers followedby Al(Cu) metal lines. TiSi2 has a relatively low contact resistance and reduces the series resistance of both source/drain as well as gate regions

Mapping of Process-Induced Dopant Redistributions by Electron Holography

2004 ◽  
Vol 10 (4) ◽  
pp. 462-469 ◽  
Author(s):  
Wolf-Dieter Rau ◽  
Alexander Orchowski
Keyword(s):  
Semiconductor Device ◽  
Device Fabrication ◽  
Electron Holography ◽  
Dopant Diffusion ◽  
Fundamental Parameters ◽  
Device Processing ◽  
Device Structures ◽  
Before And After ◽  
Potential Applications ◽  
Junction Potential

We present and review dopant mapping examples in semiconductor device structures by electron holography and outline their potential applications for experimental investigation of two-dimensional (2D) dopant diffusion on the nanometer scale. We address the technical challenges of the method when applied to transistor structures with respect to quantification of the results in terms of the 2Dp–njunction potential and critically review experimental boundary conditions, accuracy, and potential pitfalls. By obtaining maps of the inner electrostatic potential before and after anneals typically used in device processing, we demonstrate how the “vertical” and “lateral” redistribution of boron during device fabrication can directly be revealed. Such data can be compared with the results of process simulation to extract the fundamental parameters for dopant diffusion in complex device structures.

scholarly journals Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

2016 ◽  
Vol 7 ◽  
pp. 1783-1793 ◽  
Author(s):  
Ann-Kathrin Kleinschmidt ◽  
Lars Barzen ◽  
Johannes Strassner ◽  
Christoph Doering ◽  
Henning Fouckhardt ◽  
...  
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Device ◽  
Device Fabrication ◽  
Etch Depth ◽  
Reflectance Anisotropy ◽  
Depth Control ◽  
Dry Etch ◽  
First Time ◽  
Secondary Ion

Reflectance anisotropy spectroscopy (RAS) equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE)) of monocrystalline multilayered III–V semiconductors in situ. The related accuracy of etch depth control is better than 16 nm. Comparison with results of secondary ion mass spectrometry (SIMS) reveals a deviation of only about 4 nm in optimal cases. To illustrate the applicability of the reported method in every day settings for the first time the highly etch depth sensitive lithographic process to form a film lens on the waveguide ridge of a broad area laser (BAL) is presented. This example elucidates the benefits of the method in semiconductor device fabrication and also suggests how to fulfill design requirements for the sample in order to make RAS control possible.

In Situ Stress Measurements During the Formation of TiSi2 C49 On Si Wafers

1990 ◽  
Vol 188 ◽  
Author(s):  
J. F. Jongste ◽  
G. C. A. M. Janssen ◽  
S. Radelaar
Keyword(s):  
Integrated Circuits ◽  
Semiconductor Device ◽  
Large Change ◽  
In Situ Stress ◽  
Device Fabrication ◽  
Intrinsic Stress ◽  
High Resistivity ◽  
Stress Measurements ◽  
In Situ Stress Measurements

In the microelectronics industry titanium disilicide (TiSi2) is used as a material for metallization and interconnection on silicon based integrated circuits. In the C54 structure (face centred orthorhombic) TiSi2 has important properties for application in electronic devices: low resistivity (16 μΩ cm), stability up to 900°C and compatibility with silicon processing. In thin films this phase is formed above approx. 700°C. However before this phase is formed, a metastable TiSi2 phase with the C49 (or ZrSi2) structure [1] is already formed at lower temperature. This C49 phase is unfavourable as metallization in IC applications because of the high resistivity (60–300 μΩ cm). From a technological point of view however it is important to realize that during the C49 formation the thin film is subject to a large change of the intrinsic stress. The occurrence of this stress can cause problems during semiconductor device fabrication. Gate oxides in MOSFETs (and other IC microstructures) may be deteriorated by stress. Also focussing problems in lithographic steps can arise because of wafer warpage. In this paper we present in situ stress measurements of the formation of TiSi2 C49 from Ti-Si multilayers. From these measurements the kinetics of the formation process is analyzed.

Microfabrication of Crevice Corrosion Samples

2000 ◽  
Vol 657 ◽  
Author(s):  
Xiaoyan Wang ◽  
Robert G. Kelly ◽  
Jason S. Lee ◽  
Michael L. Reed
Keyword(s):  
Crevice Corrosion ◽  
Computational Models ◽  
Microelectromechanical Systems ◽  
Spatial Information ◽  
Semiconductor Device ◽  
Device Fabrication ◽  
Metal Electrodes ◽  
Electrical Connections ◽  
Microfabrication Techniques

ABSTRACTA major challenge in developing computer models for crevice corrosion lies in fabricating appropriate experimental crevice samples. The geometry and dimensions of these samples must be controlled to a high order of precision in order to be amenable for comparison to computational models. In this work we report an effort to construct crevice samples with rigorously defined dimensions by using microfabrication techniques developed for microelectromechanical systems (MEMS). These techniques include microfabrication with SU- 8, electroplating, and other standard semiconductor device fabrication techniques as well. The crevice substrates contain one-dimensional arrays of metal electrodes to be studied, which are isolated by walls of SU-8. The electrodes have individual electrical connections so that spatial information of the in-situ corrosion process can be obtained. The crevice formers with SU-8 posts were coupled to crevice substrates to maintain a uniform crevice gap. Further, crevice formers with regular rectangular subcrevices were fabricated to study the roles of subcrevices in crevice corrosion.

TEM Sample Preparation by Single-Sided Low-Energy Ion Beam Etching

2011 ◽  
Author(s):  
Liew Kaeng Nan ◽  
Lee Meng Lung
Keyword(s):  
Sample Preparation ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Critical Dimension ◽  
Low Energy ◽  
Ex Situ ◽  
Good Image Quality ◽  
Ion Beam Etching ◽  
Device Structures ◽  
Common Technique

Abstract Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal TEM sample thickness. In this paper, a technique combining 30 keV FIB milling and 3 keV ion beam etching is introduced to prepare the TEM specimen. It can be used by existing FIBs that are not equipped with low-energy ion beam. By this method, the overlapping pattern can be eliminated while maintaining good image quality.

scholarly journals Influence of Casting Solvents on CO2/CH4 Separation Using Polysulfone Membranes

Membranes ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 286
Author(s):  
Roba M. Almuhtaseb ◽  
Ahmed Awadallah-F ◽  
Shaheen A. Al-Muhtaseb ◽  
Majeda Khraisheh
Keyword(s):  
High Efficiency ◽  
In Situ Synthesis ◽  
Separation Process ◽  
Polymeric Membranes ◽  
Gas Mixture ◽  
Manufacturing Cost ◽  
Binary Gas Mixture ◽  
Maximum Permeability ◽  
Polysulfone Membranes

Polysulfone membranes exhibit resistance to high temperature with low manufacturing cost and high efficiency in the separation process. The composition of gases is an important step that estimates the efficiency of separation in membranes. As membrane types are currently becoming in demand for CO2/CH4 segregation, polysulfone will be an advantageous alternative to have in further studies. Therefore, research is undertaken in this study to evaluate two solvents: chloroform (CF) and tetrahydrofuran (THF). These solvents are tested for casting polymeric membranes from polysulfone (PSF) to separate every single component from a binary gas mixture of CO2/CH4. In addition, the effect of gas pressure was conducted from 1 to 10 bar on the behavior of the permeability and selectivity. The results refer to the fact that the maximum permeability of CO2 and CH4 for THF is 62.32 and 2.06 barrer at 1 and 2 bars, respectively. Further, the maximum permeability of CF is 57.59 and 2.12 barrer at 1 and 2 bars, respectively. The outcome selectivity values are 48 and 36 for THF and CF at 1 bar, accordingly. Furthermore, the study declares that with the increase in pressure, the permeability and selectivity values drop for CF and THF. The performance for polysulfone (PSF) membrane that is manufactured with THF is superior to that of CF relative to the Robeson upper bound. Therefore, through the results, it can be deduced that the solvent during in-situ synthesis has a significant influence on the gas separation of a binary mixture of CO2/CH4.

Irradiation Induced Changes in Semiconducting Thin Films

2013 ◽  
Vol 341 ◽  
pp. 181-210 ◽  
Author(s):  
S.K. Tripathi
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Heavy Ions ◽  
Semiconductor Device ◽  
High Energy ◽  
Device Fabrication ◽  
Electrical Performance ◽  
Radiation Environment ◽  
Extended Defects ◽  
Semiconducting Thin Films

High-energy electron, proton, neutron, photon and ion irradiation of semiconductor diodes and solar cells has long been a topic of considerable interest in the field of semiconductor device fabrication. The inevitable damage production during the process of irradiation is used to study and engineer the defects in semiconductors. In a strong radiation environment in space, the electrical performance of solar cells is degraded due to direct exposure to energetically charged particles. A considerable amount of work has been reported on the study of radiation damage in various solar cell materials and devices in the recent past. In most cases, high-energy heavy ions damage the material by producing a large amount of extended defects, but high-energy light ions are suitable for producing and modifying the intrinsic point defects. The defects can play a variety of electronically active roles that affect the electrical, structural and optical properties of a semiconductor. This review article aims to present an overview of the advancement of research in the modification of glassy semiconducting thin films using different types of radiations (light, proton and swift heavy ions). The work which has been done in our laboratory related to irradiation induced effects in semiconducting thin films will also be compared with the existing literature.

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