Interface structure and formation between gold and trimethylcyclohexane polycarbonate

1999 ◽  
Vol 14 (9) ◽  
pp. 3538-3543 ◽  
Author(s):  
C. v. Bechtolsheim ◽  
V. Zaporojtchenko ◽  
F. Faupel
Keyword(s):  
Photoelectron Spectroscopy ◽  
Elevated Temperatures ◽  
Cluster Formation ◽  
Systematic Investigation ◽  
Temperature Dependent ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Metal Diffusion ◽  
Atomic Force ◽  
Transmission Electron

This paper presents the results of a systematic investigation of structure and formation of the interface between gold and trimethylcyclohexane polycarbonate, particularly concerning interface evolvement during gold evaporation and the influence of evaporation rate, substrate temperature, and subsequent annealing. The means of investigation were cross-sectional transmission electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy. Extensive metal diffusion into the polymer and cluster formation near the interface were observed at deposition rates of the order of one monolayer per minute and below. The penetration depth is strongly temperature dependent. At high evaporation rates metal aggregation at the surface prevents cluster formation inside the polymer. No diffusion into the polymer was observed from metal films deposited at room temperature after extensive annealing at elevated temperatures.

Thermal Stability and Analysis of Laser Deposited Platinum Films

2000 ◽  
Vol 624 ◽  
Author(s):  
G.J. Berry ◽  
J.A. Cairns ◽  
M.R. Davidson ◽  
Y.C. Fan ◽  
A.G. Fitzgerald ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Photoelectron Spectroscopy ◽  
Elevated Temperatures ◽  
Surface Composition ◽  
Direct Write ◽  
Force Microscopy ◽  
Annealing Conditions ◽  
Atomic Force ◽  
Transmission Electron ◽  
Induced Decomposition

ABSTRACTAs the trend towards device miniaturisation continues, surface effects and the thermal stability of metal deposits becomes increasingly important. We present here a study of the morphology and composition of platinum films, produced by the UV-induced decomposition of organometallic materials, under various annealing conditions. The surface composition of the metal deposits was studied by X-ray photoelectron spectroscopy, both as-deposited and following thermal treatment. In addition, the morphology of the surface was studied by atomic force microscopy which enabled the investigation of film restructuring. These studies were performed over a range of temperatures up to 1000°C in air and up to 600°C in reducing environments. Complementary information regarding the film morphology has been obtained from transmission electron microscopy. The data has been used to provide an insight into the effects of elevated temperatures on metal films deposited by a direct write method

Microstructure and Physical Properties of Ferroelectric-gate Memory Capacitors with Various Buffer Layers

2001 ◽  
Vol 666 ◽  
Author(s):  
Christine Caragianis-Broadbridge ◽  
Jin-ping Han ◽  
T. P. Ma ◽  
Ann Hein Lehman ◽  
Wenjuan Zhu ◽  
...  
Keyword(s):  
Physical Properties ◽  
Photoelectron Spectroscopy ◽  
Hafnium Oxide ◽  
Silicon Oxide ◽  
Buffer Layers ◽  
Cross Sectional ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

ABSTRACTThis paper reports the microstructure and physical properties of ferroelectric capacitors formed from SrBi2Ta2O9(SBT) layers on Si with various buffer layers including jet-vapor deposited silicon nitride, zirconium oxide, hafnium oxide and thermally grown silicon oxide. Results from cross-sectional transmission electron microscopy (X-TEM), energy dispersive spectroscopy (EDS), X-Ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and non-contact atomic force microscopy (nc-AFM) data coupled with capacitance-voltage (C-V) and current- voltage (I-V) data indicate that both the microstructure and physical properties of SBT films deposited on silicon are dependent on the buffer layer material employed.

Temperature Dependent Quasi-Periodic Facetting of AlAs Grown by MBE on (100) GaAs Substrates

1993 ◽  
Vol 312 ◽  
Author(s):  
Richard Mirin ◽  
Mohan Krishnamurthy ◽  
James Ibbetson ◽  
Arthur Gossard ◽  
John English ◽  
...  
Keyword(s):  
Growth Conditions ◽  
High Energy ◽  
High Energy Electron ◽  
Temperature Dependent ◽  
Cross Sectional ◽  
Mbe Growth ◽  
Atomic Force ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Facet Formation

AbstractHigh temperature (≥ 650°C) MBE growth of AlAs and AlAs/GaAs superlattices on (100) GaAs is shown to lead to quasi-periodic facetting. We demonstrate that the facetting is only due to the AlAs layers, and growth of GaAs on top of the facets replanarizes the surface. We show that the roughness between the AlAs and GaAs layers increases with increasing number of periods in the superlattice. The roughness increases to form distinct facets, which rapidly grow at the expense of the (100) surface. Within a few periods of the initial facet formation, the (100) surface has disappeared and only the facet planes are visible in cross-sectional transmission electron micrographs. At this point, the reflection high-energy electron diffraction pattern is spotty, and the specular spot is a distinct chevron. We also show that the facetting becomes more pronounced as the substrate temperature is increased from 620°C to 710°C. Atomic force micrographs show that the valleys enclosed by the facets can be several microns long, but they may also be only several nanometers long, depending on the growth conditions.

Curcumin delivery by modified biosourced carbon-based nanoparticles

Nanomedicine ◽  
2022 ◽  
Author(s):  
Hossein Danafar ◽  
Marziyeh Salehiabar ◽  
Murat Barsbay ◽  
Hossein Rahimi ◽  
Mohammadreza Ghaffarlou ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Free System ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Good Biocompatibility ◽  
Drug Free ◽  
Mcf 7 ◽  
Carbon Based

Aim: To prepare a novel hybrid system for the controlled release and delivery of curcumin (CUR). Methods: A method for the ultrasound-assisted fabrication of protein-modified nanosized graphene oxide-like carbon-based nanoparticles (CBNPs) was developed. After being modified with bovine serum albumin (BSA), CUR was loaded onto the synthesized hybrid (labeled CBNPs@BSA–CUR). The structure and properties of the synthesized nanoparticles were elucidated using transmission electron microscopy (TEM), atomic force microscopy (AFM), ultraviolet-visible spectroscopy (UV-Vis), Fourier-transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy (XPS) methods. Results: CBNPs@BSA–CUR showed pH sensitivity and were calculated as controlled CUR release behavior. The drug-free system exhibited good biocompatibility and was nontoxic. However, CBNPs@BSA–CUR showed acceptable antiproliferative ability against MCF-7 breast cancer cells. Conclusion: CBNPs@BSA–CUR could be considered a highly promising nontoxic nanocarrier for the delivery of CUR with good biosafety.

Temperature Dependent Structural Evolution of Graphene Layers on 4H-SiC(0001)

2011 ◽  
Vol 679-680 ◽  
pp. 797-800 ◽  
Author(s):  
Sushant Sonde ◽  
Carmelo Vecchio ◽  
Filippo Giannazzo ◽  
Corrado Bongiorno ◽  
Salvatore di Franco ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Structural Evolution ◽  
Morphological Transformation ◽  
Temperature Dependent ◽  
Microscopy Imaging ◽  
Graphene Layers ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Mode Atomic Force Microscopy

In this study we examined the structural evolution of graphene grown on 8° off-axis 4H-SiC(0001) substrates at temperatures from 1600°C to 1700°C in Ar ambient. Morphological transformation of SiC substrate after annealing was examined by Tapping Mode Atomic Force Microscopy. Moreover, by etching-out graphene layers from graphitized SiC substrates in selective trenches we determined the number of graphene layers. Numbers of graphene layers were then independently confirmed by Transmission Electron Microscopy imaging.

TEM Studies on the Microstructure of m-Face Grown 4H-SiC by Solution Growth

2020 ◽  
Vol 1004 ◽  
pp. 414-420
Author(s):  
Junro Takahashi ◽  
Kotaro Kawaguchi ◽  
Kazuhiko Kusunoki ◽  
Tomoyuki Ueyama ◽  
Kazuhito Kamei
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solution Growth ◽  
Spiral Growth ◽  
Growth Surface ◽  
Vicinal Surface ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

We have studied the microstructure of the growth surface of the 4H-SiC grown by the m-face solution growth. Atomic Force Microscopy (AFM) revealed the micro-striped morphology with the asperity of several nm in the band-like morphology region. The cross-sectional Transmission Electron Microscopy (XTEM) showed that the growth surface consisted of a bunch of nanofacets and vicinal surface. This peculiar morphology is totally different from that of conventional spiral growth on c-face, which can be closely related with the growth mechanism of the m-face solution growth.

SELF-ASSEMBLED Ge-DOTS FOR Si SOLAR CELLS

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4347-4351 ◽  
Author(s):  
H. PRESTING ◽  
J. KONLE ◽  
H. KIBBEL
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Elevated Temperatures ◽  
Growth Conditions ◽  
Open Circuit ◽  
3 Dimensional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
P Type

Silicon solar cells with embedded germanium (Ge) layers deposited as 3-dimensional islands in the Stranski-Krastanov growth mode have been grown by molecular beam epitaxy (MBE) to enhance the efficiency of Si thin film solar cells. The Ge-layers increase the infrared absorption in the base of the cell to achieve higher photocurrent which should overcome the loss in the open circuit voltage due to incorporation of a smaller bandgap material in the heterostructure. Up to 75 layers of Ge, each about 8 monolayers (ML) thick, separated by Si-spacer layers (9-18nm) have been deposited at rather elevated temperatures (700°C) on a standard 10Ωcm p-type Si-substrate. Island densities of 1011 cm -2 have been achieved by use of antimony (Sb) as surfactant. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) were used to characterize the growth of Ge-islands under variuos growth conditions. Photocurrent measurements exhibit a higher photo-response in the infrared regime but a lower open circuit voltage of the fabricated solar cells compared to a Si-reference cell.

Ta2O5-Incorporated WO3 Nanocomposite Film for Improved Electrochromic Performance in an Acidic Condition

2006 ◽  
Vol 6 (11) ◽  
pp. 3572-3576 ◽  
Author(s):  
Hee-Sang Shim ◽  
Hyo-Jin Ahn ◽  
Youn-Su Kim ◽  
Yung-Eun Sung ◽  
Won Bae Kim
Keyword(s):  
Surface Roughness ◽  
Photoelectron Spectroscopy ◽  
Potential Cycling ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Continuous Potential ◽  
Chemical States ◽  
The Stability

We report electrochromic and electrochemical properties of a WO3-Ta2O5 nanocomposite electrode that was fabricated from co-sputtering. Transmission electron microscopy (TEM)images of the WO3-Ta2O5 nanocomposite electrode revealed that morphology of the WO3 film was changed by incorporation of Ta2O5 nanoparticles, and their chemical states were confirmed to be W6+ and Ta5+ oxides from X-ray photoelectron spectroscopy (XPS). The introduction of Ta2O5 to the WO3 film played a role in alleviating surface roughness increase during continuous potential cycling; whereas the surface roughness of the WO3 film was increased from ca. 3.0 nm to ca. 13.4 nm after 400 cycles, the roughness increase on the WO3-Ta2O5 was significantly reduced to 4.2 nm after 400 cycles, as investigated by atomic force microscopy (AFM). This improvement of the stability by adding Ta2O5 may be responsible for the enhanced electrochemical and optical properties over long-term cycling with the WO3-Ta2O5 nanocomposite electrode.

Nanomechanical Properties and Nanostructure of CMG and CMP Machined Si Substrates

2008 ◽  
Vol 381-382 ◽  
pp. 525-528 ◽  
Author(s):  
B.L. Wang ◽  
Han Huang ◽  
Jin Zou ◽  
Li Bo Zhou
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Substrate Surface ◽  
Transmission Electron Microscopy Analysis ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
Electron Microscopy Analysis

Silicon (100) substrates machined by chemo-mechanical-grinding (CMG) and chemicalmechanical- polishing (CMP) were investigated using atomic force microscopy, cross-sectional transmission electron microscopy and nanoindentation. It was found that the substrate surface after CMG was slightly better than machined by CMP in terms of roughness. The transmission electron microscopy analysis showed that the CMG-generated subsurface was defect-free, but the CMP specimen had a crystalline layer of about 4 nm in thickness on the top of the silicon lattice as evidenced by the extra diffraction spots. Nanoindentation results indicated that there exists a slight difference in mechanical properties between the CMG and CMP machined substrates.

Chemical and Structural Analysis of Nitridated Sapphire

1997 ◽  
Vol 482 ◽  
Author(s):  
Y. Cho ◽  
S. Rouvimov ◽  
Y. Kim ◽  
Z. Liliental-Weber ◽  
E. R. Weber
Keyword(s):  
Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Structural Analysis ◽  
Photoelectron Spectroscopy ◽  
High Resolution Electron Microscopy ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Resolution Electron

AbstractThe incorporation of nitrogen into sapphire substrates during nitridation was studied by xray photoelectron spectroscopy (XPS). An increase in the intensity of nitrogen 1s peak in XPS was observed upon longer nitridation. The surface morphology of the substrates was characterized by atomic force microscopy (AFM). High resolution electron microscopy (HREM) was employed for structural analysis. The cross sectional TEM showed a thin layer of AlN buried between amorphous AlNxO1−x and sapphire. This is the first direct observation of AlN on sapphire. The TEM images show a deeper penetration depth of nitrogen into a longer nitridated sapphire.

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