Growth of Ruthenium and Ruthenium oxide nanoplates

2011 ◽  
Vol 1309 ◽  
Author(s):  
Lamartine Meda ◽  
Geoffrey D. Stevens
Keyword(s):  
Indium Tin Oxide ◽  
Ruthenium Oxide ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Coated Glass Substrate ◽  
X Ray ◽  
Average Area ◽  
Continuous Layer ◽  
Vertically Aligned

ABSTRACTBy carefully manipulating and controlling the growth conditions, Ruthenium (Ru) and ruthenium oxide (RuO2) two-dimensional (2-D) nanostructure were self-assembled into a stack of plates on indium tin oxide coated glass substrate. The nanoplates were grown in a horizontal hot-wall metalorganic chemical vapor deposition (MOCVD) from ruthenocene. Each nanoplate has a thickness in the range of 25 - 60 nm and the average area is 1000 x 300 nm2. Each stack of nanoplates is approximately 1.2 m in height. A continuous layer of Ru and RuO2 thin film, which may serve as the growth template, is observed on the bottom of the nanoplate stacks. Field-emission scanning electron microscopy reveals that each stack of nanoplates was grown vertically aligned on the substrate and exhibited elongated shape. Structural properties which were examined by X-ray diffraction show that the nanoplates are polycrystalline.

Lead Titanate Thin Films Prepared by Metallorganic Chemical Vapor Deposion (MOCVD) on Sapphire, Pt, and RuOx Substrates

1993 ◽  
Vol 335 ◽  
Author(s):  
Warren C. Hendricks ◽  
Seshu B. Desu ◽  
Chien H. Peng
Keyword(s):  
Thin Films ◽  
Ruthenium Oxide ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Experimental Conditions ◽  
X Ray ◽  
Composition Control ◽  
Oxide Substrates ◽  
Temperature Deposition ◽  
Titanium Ethoxide

AbstractTransparent and highly specular PbTiO3 thin films were deposited on sapphire, platinum and ruthenium oxide-coated silicon wafers by hot-wall metallorganic chemical vapor deposition (MOCVD). Lead bis-tetramethylheptadionate and titanium ethoxide were used as chemical precursors. Films were deposited over a range of experimental conditions. X-ray diffraction (XRD) was used to determine the phases present in the films; Scanning Electron Microscopy (SEM) was used to examine the surface morphology and Energy Dispersive Spectroscopy (EDS) was used to determine the composition. Optical spectra were obtained to confirm the highly dense and transparent nature of the films. The chemical stability of the ruthenium oxide substrates in the MOCVD environment as well as the existence of a high-temperature deposition regime for composition control are also discussed.

Effect of film composition on the orientation of (Ba,Sr)TiO3 grains in (Ba,Sr)yTiO2+ythin films

1999 ◽  
Vol 14 (12) ◽  
pp. 4657-4666 ◽  
Author(s):  
Debra L. Kaiser ◽  
Mark D. Vaudin ◽  
Lawrence D. Rotter ◽  
John E. Bonevich ◽  
Igor Levin ◽  
...  
Keyword(s):  
Amorphous Phase ◽  
Composition Dependence ◽  
Compressive Strain ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Two Phase ◽  
Film Composition ◽  
X Ray ◽  
Transmission Electron

Thin films of composition (Ba,Sr)yTiO2+y with 0.43 ≤ y ≤; 1.64, were deposited by metalorganic chemical vapor deposition on (100) MgO substrates at various growth conditions. X-ray diffraction and transmission electron microscopy studies showed that the films were composed of epitaxial Ba1–xSrxTiO3 (x ≈0.06) grains and an amorphous phase. The orientation of the tetragonal Ba1–xSrxTiO3 grains (pure a axis, pure c axis, or a mix of the two) was found to be strongly dependent upon film composition. This composition dependence is explained for the majority of the Ti-rich films by an analysis of average strains in the two-phase films, assuming a compressive strain of ≈1% in the amorphous phase.

scholarly journals Crystal Growth of the Quasi-2D Quarternary Compound AgCrP2S6 by Chemical Vapor Transport

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 500
Author(s):  
Sebastian Selter ◽  
Yuliia Shemerliuk ◽  
Bernd Büchner ◽  
Saicharan Aswartham
Keyword(s):  
Crystal Growth ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
X Ray Diffraction ◽  
Monoclinic Symmetry ◽  
X Ray ◽  
Low Dimensional

We report optimized crystal growth conditions for the quarternary compound AgCrP2S6 by chemical vapor transport. Compositional and structural characterization of the obtained crystals were carried out by means of energy-dispersive X-ray spectroscopy and powder X-ray diffraction. AgCrP2S6 is structurally closely related to the M2P2S6 family, which contains several compounds that are under investigation as 2D magnets. As-grown crystals exhibit a plate-like, layered morphology as well as a hexagonal habitus. AgCrP2S6 crystallizes in monoclinic symmetry in the space group P2/a (No. 13). The successful growth of large high-quality single crystals paves the way for further investigations of low dimensional magnetism and its anisotropies in the future and may further allow for the manufacturing of few-layer (or even monolayer) samples by exfoliation.

Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiC

2006 ◽  
Vol 527-529 ◽  
pp. 27-30 ◽  
Author(s):  
Saurav Nigam ◽  
Hun Jae Chung ◽  
Sung Wook Huh ◽  
J.R. Grim ◽  
A.Y. Polyakov ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Rates ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Carbon Supply ◽  
Equilibrium Calculations ◽  
Thermodynamic Equilibrium Calculations

Growth rates and relative stability of 6H- and 4H-SiC have been studied as a function of growth conditions during Halide Chemical Vapor Deposition (HCVD) process using silicon tetrachloride, propane and hydrogen as reactants. The growth temperature ranged from 2000 to 2150 oC. Silicon carbide crystals were deposited at growth rates in the 100-300 μm/hr range in both silicon- and carbon-supply limited regimes by adjusting flows of all three reactants. High resolution x-ray diffraction measurements show that the growth on Si-face of 6H- and C-face of 4H-SiC substrates resulted in single crystal 6H- and 4H-SiC polytype, respectively. The growth rate results have been interpreted using thermodynamic equilibrium calculations.

Combined Structural and Optical Assessment of CVD Grown 3C-SiC/Si

1994 ◽  
Vol 339 ◽  
Author(s):  
Z. C. Feng ◽  
C. C. Tin ◽  
K. T. Yue ◽  
R. Hu ◽  
J. Williams ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Growth Conditions ◽  
Growth Time ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystal Perfection ◽  
Cvd Growth ◽  
Torr Pressure ◽  
High Degree ◽  
Sic Films

ABSTRACTA combined structural and optical assessment of cubic (3C-) SiC thin films grown on Si (100) substrates by chemical vapor epitaxy (CVD) is presented. The CVD growth was performed at both atmospheric and low (100 Torr) pressure, using a vertical reactor. The CVD-grown 3C-SiC films with different growth time were characterized by X-ray diffraction, Raman scattering and Fourier transform infrared (FTIR) spectroscopy to be single crystalline with a high degree of crystal perfection. The film thickness was determined from FTIR spectra. Variations of X-ray, FTIR and Raman spectra with different growth conditions and film thicknesses are studied comparatively. Related problems are discussed.

scholarly journals Synthesis and Characterization of Highly Crystalline Vertically Aligned WSe2 Nanosheets

2020 ◽  
Vol 10 (3) ◽  
pp. 874 ◽  
Author(s):  
Ayrton Sierra-Castillo ◽  
Emile Haye ◽  
Selene Acosta ◽  
Carla Bittencourt ◽  
J.-F. Colomer
Keyword(s):  
Photoelectron Spectroscopy ◽  
Gas Sensing ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electron Microscopies ◽  
Vapor Deposition Technique ◽  
Pressure Chemical ◽  
Vertically Aligned

Here, we report on the synthesis of tungsten diselenide (WSe2) nanosheets using an atmospheric pressure chemical vapor deposition technique via the rapid selenization of thin tungsten films. The morphology and the structure, as well as the optical properties, of the so-produced material have been studied using electron microscopies, X-ray photoelectron spectroscopy, photoluminescence, UV–visible and Raman spectroscopies, and X-ray diffraction. These studies confirmed the high crystallinity, quality, purity, and orientation of the WSe2 nanosheets, in addition to the unexpected presence of mixed phases, instead of only the most thermodynamically stable 2H phase. The synthesized material might be useful for applications such as gas sensing or for hydrogen evolution reaction catalysis.

Different Pathways for Synthesis of WO3 and Vertically Aligned Carbon Nanotube-Based Nanostructures

2021 ◽  
Vol 21 (4) ◽  
pp. 2388-2393
Author(s):  
Anna Szabó ◽  
Gábor Kovács ◽  
Anita Kovács ◽  
Klara Hernadi
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Synthesis Method ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vertically Aligned ◽  
Carbon Nanotube Forests ◽  
Scanning Electron

The synthesis and investigation of vertically aligned carbon nanotube (VACNT) based materials are gaining more-and-more interest among scientists due to their specific properties (e.g., electrical, optical, mechanical). Therefore, our interest for the present research has focused on synthesis of WO3/VACNT based nanostructures (using carbon nanotube forests obtained by catalytic chemical vapor deposition—CCVD method on aluminum substrate) using different synthesis pathways and WO3 precursors. The obtained composites were investigated by scanning electron microscopy (SEM), Raman spectroscopy, while the obtained crystal structures were characterized by X-ray diffraction (XRD). Results have shown that depending on the synthesis method, and using as template the carbonaceous structure, we can successfully obtain non-stochiometric tungsten oxide (W18O49) or WO3 composites.

scholarly journals Well-AlignedIrO2Nanocrystals

2007 ◽  
Vol 2007 ◽  
pp. 1-17 ◽  
Author(s):  
Alexandru Korotcov ◽  
Reui-San Chen ◽  
Hung-Pin Hsu ◽  
Ying-Sheng Huang ◽  
Dah-Shyang Tsai ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Substrate Effect ◽  
X Ray Diffraction ◽  
Scanning Electron Microscopy Micrographs ◽  
X Ray ◽  
Metal Organic ◽  
Vertically Aligned ◽  
Organic Chemical Vapor Deposition

We review the results of synthesis of well-alignedIrO2nanocrystals (NCs) on sapphire (SA), LiNbO3(LNO), LiTaO3(LTO) substrates via reactive magnetron sputtering and metal-organic chemical vapor deposition. The surface morphology and structural properties of the as-deposited NCs were characterized. Field emission scanning electron microscopy micrographs reveal that NCs grown on SA(100)/LNO(100) are vertically aligned, while the NCs on SA(012)/LTO(012) and SA(110) contain singly and doubly tilted alignments, respectively, with a tilt angle of∼35∘from the normal to the substrates. NCs grown on SA(001) show in-plane alignment with mosaic structure. The X-ray diffraction results indicate that the NCs are (001), (101), and (100) oriented on SA(100)/LNO(100), SA(012)/LTO(012)/SA(110), and SA(001) substrates, respectively. A strong substrate effect on the alignment of theIrO2NCs deposition has been demonstrated. The roles of different substrates in the formation of various textures of nanocrystallineIrO2are studied and the possible mechanisms have been discussed.

Conducting Thin Films of Ruthenium Oxide Prepared by Mocvd

1998 ◽  
Vol 514 ◽  
Author(s):  
P. Hones ◽  
C.-H. Kohli ◽  
R. Sanjinés ◽  
F. Lévy ◽  
T. Gerfin ◽  
...  
Keyword(s):  
Thin Films ◽  
Metalorganic Chemical Vapor Deposition ◽  
Resistivity Measurement ◽  
Ruthenium Oxide ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputtered Films ◽  
Before And After

ABSTRACTConducting thin films of RuO2 were grown at temperatures down to 623K on glass by metalorganic chemical vapor deposition (MOCVD). Tris-trifluoroacetylacetonate-ruthenium(III) (Ru(tfa)3) served as precursor. Smooth, specular and well adherent films were deposited, if the reaction gas contained water. The films were investigated by X-ray diffraction, SEM, and fourprobe resistivity measurement. Growth kinetics were also studied by in situ ellipsometry. The results are compared with films prepared by d.c. reactive sputtering before and after annealing. The properties of the MOCVD films, in particular the resistivity (ρ down to 72 μΩcm), are comparable to CVD films deposited at much higher temperatures and sputtered films after high temperature annealing.

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