Effect of film composition on the orientation of (Ba,Sr)TiO3 grains in (Ba,Sr)yTiO2+ythin films

1999 ◽  
Vol 14 (12) ◽  
pp. 4657-4666 ◽  
Author(s):  
Debra L. Kaiser ◽  
Mark D. Vaudin ◽  
Lawrence D. Rotter ◽  
John E. Bonevich ◽  
Igor Levin ◽  
...  
Keyword(s):  
Amorphous Phase ◽  
Composition Dependence ◽  
Compressive Strain ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Two Phase ◽  
Film Composition ◽  
X Ray ◽  
Transmission Electron

Thin films of composition (Ba,Sr)yTiO2+y with 0.43 ≤ y ≤; 1.64, were deposited by metalorganic chemical vapor deposition on (100) MgO substrates at various growth conditions. X-ray diffraction and transmission electron microscopy studies showed that the films were composed of epitaxial Ba1–xSrxTiO3 (x ≈0.06) grains and an amorphous phase. The orientation of the tetragonal Ba1–xSrxTiO3 grains (pure a axis, pure c axis, or a mix of the two) was found to be strongly dependent upon film composition. This composition dependence is explained for the majority of the Ti-rich films by an analysis of average strains in the two-phase films, assuming a compressive strain of ≈1% in the amorphous phase.

AlxGa1-xN-Based Materials and Heterostructures

1996 ◽  
Vol 449 ◽  
Author(s):  
P. Kung ◽  
A. Saxler ◽  
D. Walker ◽  
X. Zhang ◽  
R. Lavado ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Bragg Reflectors ◽  
X Ray Diffraction ◽  
Chemical Vapor Deposition Growth ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Dimensional Electron Gas ◽  
P Type

ABSTRACTWe present the metalorganic chemical vapor deposition growth, n-type and p-type doping and characterization of AlxGa1-xN alloys on sapphire substrates. We report the fabrication of Bragg reflectors and the demonstration of two dimensional electron gas structures using AlxGa1-xN high quality films. We report the structural characterization of the AlxGa1-xN / GaN multilayer structures and superlattices through X-ray diffraction and transmission electron microscopy. A density of screw and mixed threading dislocations as low as 107 cm-2 was estimated in AlxGa1-xN / GaN structures. The realization of AlxGa1-xN based UV photodetectors with tailored cut-off wavelengths from 365 to 200 nm are presented.

Microstructures of two-phase Ti–Cr alloys containing the TiCr2 Laves phase intermetallic

1997 ◽  
Vol 12 (6) ◽  
pp. 1472-1480 ◽  
Author(s):  
Katherine C. Chen ◽  
Samuel M. Allen ◽  
James D. Livingston
Keyword(s):  
Laves Phase ◽  
X Ray Diffraction ◽  
Orientation Relationships ◽  
Phase Growth ◽  
Two Phase ◽  
X Ray ◽  
Lattice Constants ◽  
Annealing Temperatures ◽  
Transmission Electron ◽  
Phase Intermetallic

Microstructures of two-phase Ti–Cr alloys (Ti-rich bcc + TiCr2 and Cr-rich bcc + TiCr2) are analyzed. A variety of TiCr2 precipitate morphologies is encountered with different nominal alloy compositions and annealing temperatures. Lattice constants and crystal structures are determined by x-ray diffraction (XRD) and transmission electron microscopy (TEM). Orientation relationships between the beta bcc solid solution and C15 TiCr2 Laves phase are understood in terms of geometrical packing, and are consistent with a Laves phase growth mechanism involving twinning.

Crystalline phase transformation of colloidal cadmium sulfide nanocrystals

2017 ◽  
Vol 31 (06) ◽  
pp. 1750037
Author(s):  
M. Ghali ◽  
A. M. Eissa ◽  
M. M. Mosaad
Keyword(s):  
Phase Transformation ◽  
Optical Absorption ◽  
Crystalline Phase ◽  
Growth Conditions ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
Solution Ph ◽  
X Ray ◽  
Ph Values ◽  
Transmission Electron

In this paper, we give a microscopic view concerning influence of the growth conditions on the physical properties of nanocrystals (NCs) thin films made of CdS, prepared using chemical bath deposition CBD technique. We show a crystalline phase transformation of CdS NCs from hexagonal wurtzite (W) structure to cubic zincblende (ZB) when the growth conditions change, particularly the solution pH values. This effect was confirmed using X-ray diffraction (XRD), transmission electron microscopy (TEM), optical absorption and photoluminescence (PL) measurements. The optical absorption spectra allow calculation of the bandgap value, [Formula: see text], where significant increase [Formula: see text]200 meV in the CdS bandgap when transforming from Hexagonal to Cubic phase was found.

scholarly journals Deposition Mechanism and Thickness Control of CVD SiC Coatings on NextelTM440 Fibers

Coatings ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 408
Author(s):  
Yi Wang ◽  
Jian Sun ◽  
Bing Sheng ◽  
Haifeng Cheng
Keyword(s):  
Coating Thickness ◽  
Photoelectron Spectroscopy ◽  
Deposition Time ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Deposition Mechanism ◽  
Thickness Control ◽  
X Ray ◽  
Transmission Electron ◽  
Sic Coatings

SiC coatings were successfully synthesized on NextelTM440 fibers by chemical vapor deposition (CVD) using methyltrichlorosilane as the original SiC source at 1373 K. After deposited, the fibers were fully surrounded by uniform coatings with some bulges. The X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HR-TEM) results indicated that the coatings were composed of β-SiC and free carbon. Moreover, thickness control of the coatings could be carried out by adjusting the deposition time. The coating thickness rose exponentially, and the exterior of the coatings became looser as the deposition time increased. The thickness of about 1.5 µm was obtained after depositing for 4 h. The coating thickness was also theoretically calculated, and the result agreed well with the measured thickness. Finally, the related deposition mechanism is discussed and a deposition model is built.

Synthesis of Crystalline C3N4 films and the new C-N Phases

1996 ◽  
Vol 441 ◽  
Author(s):  
Yan Chen ◽  
D. J. Johnson ◽  
R. H. Prince ◽  
Liping Guo ◽  
E. G. Wang
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Monoclinic Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Constants ◽  
Transmission Electron ◽  
Hot Filament

AbstractCrystalline C-N films composed of α- and β-C3N4, as well as other C-N phases, have been synthesized via bias-assisted hot-filament chemical vapor deposition using a gas mixture of nitrogen and methane. Scanning electron microscopy(SEM), energy dispersive X-ray (EDX) analysis, X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used to characterize the films. Lattice constants of the α- and β-C3N4 phases obtained coincide very well with the theoretical values. In addition to these phases, two new C-N phases in the films have been identified by TEM and XRD; one having a tetragonal structure with a = 5.65 Å, c = 2.75Å, and the second having a monoclinic structure with a = 5.065 Å, b= 11.5 Å, c = 2.801 Å and β = 96°. Their stoichiometric values and atomic arrangements have not yet been identified. Furthermore, variation in growth parameters, for example methane concentration, bias voltage, etc., can yield preferred growth of different C-N phases.

Characteristics of Gallium Oxide Nanowires Synthesized by the Metalorganic Chemical Vapor Deposition

2007 ◽  
Vol 539-543 ◽  
pp. 1230-1235 ◽  
Author(s):  
Hyoun Woo Kim ◽  
S.H. Shim
Keyword(s):  
Chemical Vapor Deposition ◽  
Cross Sections ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Metalorganic Chemical

We have synthesized the high-density Ga2O3 nanowires on gold (Au)-coated silicon substrates using metalorganic chemical vapor deposition. The nanowires exhibited one-dimensional structures having circular cross sections with diameters in the range of 30-200 nm. The energy dispersive x-ray spectroscopy revealed that the nanowires contained elements of Ga and O, without Au-related impurities. X-ray diffraction analysis and high-resolution transmission electron microscopy showed that the Ga2O3 nanowires were crystalline.

Detection and Analysis of Phase Separation in Metalorganic Chemical Vapor Deposition InGaN

1997 ◽  
Vol 482 ◽  
Author(s):  
E. L. Piner ◽  
N. A. El-Masry ◽  
S. X. Liu ◽  
S. M. Bedair
Keyword(s):  
Chemical Vapor Deposition ◽  
Phase Separation ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Single Phase ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Metalorganic Chemical

AbstractInGaN films in the 0–50% InN composition range have been analyzed for the occurrence of phase separation. The ñ0.5 jum thick InGaN films were grown by metalorganic chemical vapor deposition (MOCVD) in the 690 to 780°C temperature range and analyzed by θ−20 x-ray diffraction (XRD), transmission electron microscopy (TEM), and selected area diffraction (SAD). As-grown films with up to 21% InN were single phase. However, for films with 28% InN and higher, the samples showed a spinodally decomposed microstructure as confirmed by TEM and extra spots in SAD patterns that corresponded to multiphase InGaN. An explanation of the data based on the GaN-InN pseudo-binary phase diagram is discussed.

The Microstructure of Fe7C3 Formed at 300°C by Plasma Enhanced Chemical Vapor Deposition (PECVD)

1993 ◽  
Vol 313 ◽  
Author(s):  
H. Siriwardane ◽  
P. Fraundorf ◽  
J.W. Newkirk ◽  
O.A. Pringle ◽  
W.J. James
Keyword(s):  
Oxidation Process ◽  
Iron Carbide ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Corrosion And Wear ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Iron Phase ◽  
Diffraction Patterns

Thin iron carbide films were prepared by introducing iron penta carbonyl (FeCO5) and hydrogen (H2) into a glow discharge. The films are of potential interest in corrosion and wear resistant applications. X-ray diffraction data of films (≈ 7000 Å thick) deposited on glass at 300°C evidenced only Fe7C3. Thinner films were required for examination by analytical and high resolution transmission electron Microscopy. Therefore, two sets of films (“thin” < 200 Å and “thick” ≈ 800 Å) were plasma-deposited on carbon or holey carbon films supported on copper grids. The thin TEM specimens exhibited a fine texture and gave rise to ring diffraction patterns, whereas the thick TEM specimens evidenced two types of structure: (i) half-Micron sized grains separated from one another by 1–2 Microns on the support, although sometimes interconnected by single crystal platelets and (ii) 300 Å grapelike clumps of 100–200 Å crystals, each individually surrounded by a 50 Å non-crystalline coating. The latter structure may result from a post-formation oxidation process which expels carbon from the iron phase into grain boundaries.

Electromechanical Properties of Pb(Mg1/3Nb2/3)O3 Thin Film Capacitors

1998 ◽  
Vol 541 ◽  
Author(s):  
G. Catalan ◽  
M.H. Corbett ◽  
R.M. Bowman ◽  
J.M. Gregg
Keyword(s):  
Thin Film ◽  
Compressive Strain ◽  
X Ray Diffraction ◽  
Leakage Currents ◽  
Plan View ◽  
X Ray ◽  
Thin Film Capacitors ◽  
Transmission Electron ◽  
Tensile Strains

AbstractPulsed Laser Deposition was used to grow Pb(Mg1/3Nb2/3)O3 (PMN) thin film planar capacitor structures. PMN crystallography was verified by x-ray diffraction and plan-view Transmission Electron Microscopy (TEM). Capacitance of the thin film structures was measured as a function of temperature and frequency. Leakage current was also measured for each capacitor. A DC field was subsequently applied and crystallographic strain was monitored in-situ by X-ray diffraction. The electromechanical strain was found to strongly depend on the deposition conditions for each capacitor. Tensile strains of ∼0.2% and compressive strains of ∼0.3% parallel to the applied field were measured for capacitors of different oxygen contents and thicknesses. We propose that the compressive strain is caused by the combined effect of joule heating of the capacitor structure, caused by large leakage currents, and epitaxial coupling between substrate and films. Electrostrictive tensile strains are of the same order as observed inbulk.

scholarly journals Structural Property Study for GeSn Thin Films

Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3645
Author(s):  
Liyao Zhang ◽  
Yuxin Song ◽  
Nils von den Driesch ◽  
Zhenpu Zhang ◽  
Dan Buca ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy. Two-dimensional reciprocal space maps around the asymmetric (224) reflection were collected by X-ray diffraction for both the whole structures and the GeSn epilayers. The broadenings of the features of the GeSn epilayers with different relaxations in the ω direction, along the ω-2θ direction and parallel to the surface were investigated. The dislocations were identified by transmission electron microscopy. Threading dislocations were found in MBE grown GeSn layers, but not in the CVD grown ones. The point defects and dislocations were two possible reasons for the poor optical properties in the GeSn alloys grown by MBE.

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