Laser Endotaxy and PIN Diode Fabrication of Silicon Carbide

2006 ◽  
Vol 911 ◽  
Author(s):  
Zhaoxu Tian ◽  
Nathaniel R Quick ◽  
Aravinda Kar
Keyword(s):  
Silicon Carbide ◽  
Energy Dispersive Spectrometry ◽  
Solid Phase ◽  
Pin Diode ◽  
Carbon Incorporation ◽  
Pin Diodes ◽  
X Ray ◽  
Transmission Electron ◽  
Diffusion Technique ◽  
Doping Technique

AbstractA laser solid phase diffusion technique has been utilized to fabricate endolayers in n-type 6H-SiC substrates by carbon incorporation. X-ray energy dispersive spectrometry (XEDS) analysis showed that the thickness of endolayer is about 100 nm. High resolution transmission electron microscopy (HREM) images indicate that the laser endotaxy process maintains the crystalline integrity of the substrate without any amorphization. The resistivity of the endolayer was 1.1 ¡Á105 •cm and 9.4 ¡Á104 •cm after annealing at 1000C for 10 min. These resistivities provide device isolation for many applications. The silicon carbide endolayer was doped with aluminum using a laser doping technique to create p-region on the top surface of the endolayer in order to fabricate PIN diodes.

Oxidation of silicon carbide and the formation of silica polymorphs

2006 ◽  
Vol 21 (10) ◽  
pp. 2550-2563 ◽  
Author(s):  
Maxime J-F. Guinel ◽  
M. Grant Norton
Keyword(s):  
Silicon Carbide ◽  
Photoelectron Spectroscopy ◽  
Polycrystalline Silicon ◽  
Ambient Pressure ◽  
Silicon Oxycarbide ◽  
Oxide Scales ◽  
X Ray ◽  
Transmission Electron ◽  
Polycrystalline Silicon Carbide ◽  
Crystalline Films

The oxidation of both single crystal and relatively pure polycrystalline silicon carbide, between 973 and 2053 K, resulted in the formation of cristobalite, quartz, or tridymite, which are the stable crystalline polymorphs of silica (SiO2) at ambient pressure. The oxide scales were found to be pure SiO2 with no contamination resulting from the oxidizing environment. The only variable affecting the occurrence of a specific polymorph was the oxidation temperature. Cristobalite was formed at temperatures ≥1673 K, tridymite between 1073 and 1573 K, and quartz formed at 973 K. The polymorphs were determined using electron diffraction in a transmission electron microscope. These results were further confirmed using infrared and Raman spectroscopies. Cristobalite was observed to grow in a spherulitic fashion from amorphous silica. This was not the case for tridymite and quartz, which appeared to grow as oriented crystalline films. The presence of a thin silicon oxycarbide interlayer was detected at the interface between the SiC substrate and the crystalline silica using x-ray photoelectron spectroscopy.

Extended Defects in 4H-SiC PiN Diodes

2002 ◽  
Vol 742 ◽  
Author(s):  
M. E. Twigg ◽  
R. E. Stahlbush ◽  
M. Fatemi ◽  
S. D. Arthur ◽  
J. B. Fedison ◽  
...  
Keyword(s):  
Elevated Temperatures ◽  
Compressive Strain ◽  
Pin Diode ◽  
Extended Defects ◽  
Pin Diodes ◽  
Plan View ◽  
Shockley Partial ◽  
Inhomogeneous Strain ◽  
Partial Dislocations ◽  
Transmission Electron

ABSTRACTUsing site-specific plan-view transmission electron microscopy (TEM) and lightemission imaging (LEI), we have identified SFs formed during forward biasing of 4H-SiC PiN diodes. These SFs are bounded by Shockley partial dislocations and are formed by shear strain rather than by condensation of vacancies or interstitials. Detailed analysis using TEM diffraction contrast experiments reveal SFs with leading carbon-core Shockley partial dislocations as well as with the silicon-core partial dislocations observed in plastic deformation of 4H-SiC at elevated temperatures. The leading Shockley partials are seen to relieve both tensile and compressive strain during PiN diode operation, suggesting the presence of a complex and inhomogeneous strain field in the 4H-SiC layer.

Dependence of the Product's Phase Composition on the Ratio of Precursors in Plasmadynamic Synthesis of Silicon Carbide

2018 ◽  
Vol 769 ◽  
pp. 114-119 ◽  
Author(s):  
Artur A. Sivkov ◽  
Artur Nassyrbayev ◽  
Maksim Gukov
Keyword(s):  
Electron Microscopy ◽  
Silicon Carbide ◽  
Synthesis Method ◽  
X Ray Diffraction ◽  
Central Electrode ◽  
X Ray ◽  
Transmission Electron ◽  
Cubic Silicon Carbide ◽  
Accelerator Channel ◽  
Coaxial Magnetoplasma Accelerator

In this work, the powder of nanoscale cubic SiC was obtained by the plasmodynamic synthesis in a coaxial magnetoplasma accelerator (CMPA) with a graphite central electrode and an accelerator channel. The synthesis method allows obtaining a product with a high content of nanoscale cubic silicon carbide. The work is aimed to study the influence of the precursor’s ratio on the product. The synthesized products were analyzed by X-ray diffraction and transmission electron microscopy.

scholarly journals Multi-Analytical Approach for Asbestos Minerals and Their Non-Asbestiform Analogues: Inferences from Host Rock Textural Constraints

Fibers ◽  
2019 ◽  
Vol 7 (5) ◽  
pp. 42 ◽  
Author(s):  
Gaia Maria Militello ◽  
Andrea Bloise ◽  
Laura Gaggero ◽  
Gabriele Lanzafame ◽  
Rosalda Punturo
Keyword(s):  
Energy Dispersive Spectrometry ◽  
Dimensional Space ◽  
Three Dimensional ◽  
Instrumental Approach ◽  
X Ray ◽  
Transmission Electron ◽  
Analytical Protocol ◽  
Non Destructive ◽  
Selection Of ◽  
Three Dimensional Space

Asbestos is a hazardous mineral, as well as a common and well-known issue worldwide. However, amphiboles equal in composition but not in morphology, as well as the fibrous antigorite and lizardite, are not classified as asbestos even if more common than other forms of the mineral. Still, their potential hazardous properties requires further exploration. The proposed multi-instrumental approach focuses on the influence of textural constraints on the subsequent origin of asbestiform products in massive rock. This aspect has a significant effect on diagnostic policies addressing environmental monitoring and the clinical perspective. Concerning minerals that are chemically and geometrically (length > 5 μm, width < 3 μm and length:diameter > 3:1) but not morphologically analogous to regulated asbestos, the debate about their potential hazardous properties is open and ongoing. Therefore, a selection of various lithotypes featuring the challenging identification of fibrous phases with critical counting dimensions was investigated; this selection consisted of two serpentinites, one metabasalt and one pyroxenite. The analytical protocol included optical microscopy (OM), scanning and transmission electron microscopy combined with energy dispersive spectrometry (SEM/EDS; TEM/EDS), micro-Raman spectroscopy and synchrotron radiation X-ray microtomography (SR X-ray μCT). The latter is an original non-destructive approach that allows the observation of the fiber arrangement in a three-dimensional space, avoiding morphological influence as a result of comminution.

Morphology of and Silicon Distribution within the Non-Glandular Trichomes of Soybean

1997 ◽  
Vol 3 (S2) ◽  
pp. 101-102
Author(s):  
R.N. Paul ◽  
C.D. Elmore ◽  
D. Gibson
Keyword(s):  
Energy Dispersive Spectrometry ◽  
Glandular Trichomes ◽  
Energy Dispersive ◽  
Fixed Tissue ◽  
Trifoliate Leaf ◽  
X Ray ◽  
Transmission Electron ◽  
Leaf Surfaces ◽  
Semithin Sections ◽  
Juvenile Plants

Three near isolines of soybean [Glycine max (L.) Merr.], glabrous, normal, and dense, were examined by light, scanning electron, and transmission electron microscopy, as well as by energy dispersive x-ray spectroscopy. This was done in order to determine the morphology and possible functions, in addition to conveying insect resistance, of their non-glandular trichomes.The uppermost fully expanded trifoliate leaf from greenhouse grown juvenile plants was chosen for examination. Fixed tissue was examined by LM, TEM and SEM as previously described. Some tissue was prepared for energy dispersive spectrometry by fixing in glutaraldehyde but omitting osmium. The tissue was then dehydrated, critical point dried, and coated with carbon. Si x-ray maps were made on the adaxial and abaxial leaf surfaces of all three biotypes.LMs of Spurr embedded toluidine blue stained semithin sections of normal (Fig. 1) and glabrous (Fig. 2) trichomes appear similar in structure.

Evolution of Epitaxial SixGei1-x Alloys on Si(100) During Thermal Annealing a-Ge/Au Bilayers Deposited on Si Substrate

1992 ◽  
Vol 280 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen
Keyword(s):  
Single Crystal ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Growth Dynamics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTSolid phase epitaxial (SPE) growth of SixGei1-x alloys on Si (100) was achieved by thermal annealing a-Ge/Au bilayers deposited on single crystal Si substrate in the temperature range of 280°C to 310°C. Growth dynamics was investigated using X-ray diffraction, Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy. Upon annealing, Ge atoms migrate along the grain boundaries of polycrystalline Au and the epitaxial growth initiates at localized triple points between two Au grains and Si substrate, simultaneously incorporating a small amount of Si dissolved in Au. The Au is gradually displaced into the top Ge layer. Individual single crystal SixGei1-x islands then grow laterally as well as vertically. Finally, the islands coalesce to form a uniform layer of epitaxial SixGe1-x alloy on the Si substrate. The amount of Si incorporated in the final epitaxial film was found to be dependent upon the annealing temperature.

Influence of Nanocrystallinity on Properties of Photodiode and TFT Image Sensor Structure

1996 ◽  
Vol 452 ◽  
Author(s):  
A. Kolodziej ◽  
S. Nowak ◽  
P. Krewniak
Keyword(s):  
Deposition Process ◽  
Image Sensor ◽  
Pin Diode ◽  
High Deposition Rate ◽  
Laser Crystallization ◽  
X Ray Diffraction ◽  
Magnetron Deposition ◽  
X Ray ◽  
Transmission Electron ◽  
Sensor Structure

AbstractThis paper reports technological experiments which have strongly affected the properties of the multilayer image sensor structure. The high deposition rate and large hydrogen content during the reactive magnetron deposition process causes nanocrystallization of prepared silicon films. We also report experiments with laser crystallization. The effect of microstructure in a-Si:H films on TFT and pin diode characteristics has been investigated. Crystallinity was confirmed by Raman scattering, small angle X-ray diffraction (SAXD) and transmission electron microscopy (TEM). The parameters of the photodiodes such as quantum efficiency, dark and light currents, etc. have been tested using the measurements of samples in the configuration of a linear image sensor consisting of two rows, 30 to 160 pixels per row, with dimensions 0.1mm2-1mm2.

Synthesis of Silicon Carbide Nanoparticles from Carbon Nanotubes

2012 ◽  
Vol 602-604 ◽  
pp. 183-186 ◽  
Author(s):  
Jing Liu ◽  
Rong Wu ◽  
Jin Li ◽  
Yan Fei Sun ◽  
Ji Kang Jian
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Scanning Electron Microscopy ◽  
Silicon Carbide ◽  
Room Temperature ◽  
Sic Nanoparticles ◽  
X Ray ◽  
Transmission Electron ◽  
Cubic Silicon Carbide ◽  
Scanning Electron

In this paper, we report the synthesis of cubic silicon carbide (3C-SiC) nanoparticles by direction reaction of silicon powders and carbon nanotubes. The as-prepared SiC nanoparticles were characterized by X-ray powder diffraction, scanning electron microscopy, transmission electron microscopy and Raman scattering at room temperature. The possible growth mechanism is proposed.

Structure and Chemistry across Interfaces at Nanoscale of a Ge Quantum Well Embedded within Rare Earth Oxide Layers

2011 ◽  
Vol 17 (5) ◽  
pp. 759-765 ◽  
Author(s):  
Tanmay Das ◽  
Somnath Bhattacharyya
Keyword(s):  
Rare Earth ◽  
Solid Phase ◽  
Rare Earth Oxide ◽  
Dark Field ◽  
X Ray ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Annular Dark Field ◽  
Electron Energy Loss ◽  
Field Imaging

AbstractStructure and chemistry across the rare earth oxide-Ge interfaces of a Gd2O3-Ge-Gd2O3 heterostructure grown on p-Si (111) substrate using encapsulated solid phase epitaxy method have been studied at nanoscale using various transmission electron microscopy methods. The structure across both the interfaces was investigated using reconstructed phase and amplitude at exit plane. Chemistry across the interfaces was explored using elemental mapping, high-angle annular dark-field imaging, electron energy loss spectroscopy, and energy dispersive X-ray spectrometry. Results demonstrate the structural and chemical abruptness of both the interfaces, which is most essential to maintain the desired quantum barrier structure.

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