Performance of SiC Microwave Transistors in Power Amplifiers

2008 ◽  
Vol 1069 ◽  
Author(s):  
Sher Azam ◽  
R. Jonsson ◽  
E. Janzen ◽  
Q. Wahab
Keyword(s):  
Power Density ◽  
Power Amplifiers ◽  
Maximum Output Power ◽  
Maximum Output ◽  
Switching Loss ◽  
Pulse Input ◽  
Class Ab ◽  
Power Added Efficiency ◽  
Drain Bias ◽  
Class C

ABSTRACTThe performance of SiC microwave power transistors is studied in fabricated class-AB power amplifiers and class-C switching power amplifier using physical structure of an enhanced version of previously fabricated and tested SiC MESFET. The results for pulse input in class-C at 1 GHz are; efficiency of 71.4 %, power density of 1.0 W/mm. The switching loss was 0.424 W/mm. The results for two class-AB power amplifiers are; the 30-100 MHz amplifier showed 45.6 dBm (∼ 36 W) output powers at P1dB, at 50 MHz. The power added efficiency (PAE) is 48 % together with 21 dB of power gain. The maximum output power at P1dB at 60 V drain bias and Vg= -8.5 V was 46.7 dBm (∼47 W). The typical results obtained in 200-500 MHz amplifier are; at 60 V drain bias the P1dB is 43.85 dBm (24 W) except at 300 MHz where only 41.8 dBm was obtained. The maximum out put power was 44.15 dBm (26 W) at 500 MHz corresponding to a power density of 5.2 W/mm. The PAE @ P1dB [%] at 500 MHz is 66 %.

A fully matched dual stage CMOS power amplifier with integrated passive linearizer attaining 23 db gain, 40% PAE and 28 DBM OIP3

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Premmilaah Gunasegaran ◽  
Jagadheswaran Rajendran ◽  
Selvakumar Mariappan ◽  
Yusman Mohd Yusof ◽  
Zulfiqar Ali Abdul Aziz ◽  
...  
Keyword(s):  
Power Consumption ◽  
Output Power ◽  
Power Amplifier ◽  
Maximum Output Power ◽  
Maximum Output ◽  
Power Gain ◽  
Matching Network ◽  
Content Type ◽  
Power Added Efficiency ◽  
Main Amplifier

Purpose The purpose of this paper is to introduce a new linearization technique known as the passive linearizer technique which does not affect the power added efficiency (PAE) while maintaining a power gain of more than 20 dB for complementary metal oxide semiconductor (CMOS) power amplifier (PA). Design/methodology/approach The linearization mechanism is executed with an aid of a passive linearizer implemented at the gate of the main amplifier to minimize the effect of Cgs capacitance through the generation of opposite phase response at the main amplifier. The inductor-less output matching network presents an almost lossless output matching network which contributes to high gain, PAE and output power. The linearity performance is improved without the penalty of power consumption, power gain and stability. Findings With this topology, the PA delivers more than 20 dB gain for the Bluetooth Low Energy (BLE) Band from 2.4 GHz to 2.5 GHz with a supply headroom of 1.8 V. At the center frequency of 2.45 GHz, the PA exhibits a gain of 23.3 dB with corresponding peak PAE of 40.11% at a maximum output power of 14.3 dBm. At a maximum linear output power of 12.7 dBm, a PAE of 37.3% has been achieved with a peak third order intermodulation product of 28.04 dBm with a power consumption of 50.58 mW. This corresponds to ACLR of – 20 dBc, thus qualifying the PA to operate for BLE operation. Practical implications The proposed technique is able to boost up the efficiency and output power, as well as linearize the PA closer to 1 dB compression point. This reduces the trade-off between linear output power and PAE in CMOS PA design. Originality/value The proposed CMOS PA can be integrated comfortably to a BLE transmitter, allowing it to reduce the transceiver’s overall power consumption.

AlN/GaN MISHEMTs on Si with in-situ SiN as gate dielectric for power amplifiers in mobile SoCs

2021 ◽  
Author(s):  
Hanlin Xie ◽  
Zhihong Liu ◽  
Wenrui Hu ◽  
Yu Gao ◽  
Hui Teng Tan ◽  
...  
Keyword(s):  
Power Amplifiers ◽  
Gate Dielectric ◽  
Rf Power Amplifiers ◽  
Maximum Output ◽  
High Electron ◽  
Rf Power ◽  
Power Added Efficiency ◽  
5 Ghz ◽  
Mobile Soc

Abstract AlN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) on silicon substrate using in-situ SiN as gate dielectric were fabricated and their RF power performance at mobile system-on-chip (SoC) compatible voltages was measured. At a mobile SoC-compatible supply voltage of Vd = 3.5 V/5 V, the 90-nm gate-length AlN/GaN MISHEMTs showed a maximum power-added efficiency (PAE) of 62%/58%, a maximum output power density (Poutmax) of 0.44 W/mm/0.84 W/mm and a linear gain of 20 dB/19 dB at the frequency of 5 GHz. These results suggest that the in-situ-SiN/AlN/GaN-on-Si MISHEMTs are promising for RF power amplifiers in 5G mobile SoC applications.

scholarly journals Finite Time Thermodynamic Optimization of an Irreversible Proton Exchange Membrane Fuel Cell for Vehicle Use

Processes ◽  
2019 ◽  
Vol 7 (7) ◽  
pp. 419 ◽  
Author(s):  
Changjie Li ◽  
Ye Liu ◽  
Bing Xu ◽  
Zheshu Ma
Keyword(s):  
Power Density ◽  
Output Power ◽  
Proton Exchange Membrane ◽  
Operating Temperature ◽  
Maximum Output Power ◽  
Proton Exchange ◽  
Maximum Output ◽  
Operating Pressure ◽  
Output Efficiency ◽  
Exchange Membrane

A finite time thermodynamic model of an irreversible proton exchange membrane fuel cell (PEMFC) for vehicle use was established considering the effects of polarization losses and leakage current. Effects of operating parameters, including operating temperature, operating pressure, proton exchange membrane water content, and proton exchange membrane thickness, on the optimal performance of the irreversible PEMFC are numerically studied in detail. When the operating temperature of the PEMFC increases, the optimal performances of PEMFC including output power density, output efficiency, ecological objective function, and ecological coefficient of performance, will be improved. Among them, the optimal ecological objective function increased by 81%. The proton film thickness has little effect on the output efficiency and the ecological of coefficient performance. The maximum output power density increased by 58% as the water content of the proton exchange membrane increased from 50% to the saturation point. The maximum output power density increases with the operating pressure.

4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates

2007 ◽  
Vol 556-557 ◽  
pp. 763-766 ◽  
Author(s):  
Jeong Hyuk Yim ◽  
Ho Keun Song ◽  
Jeong Hyun Moon ◽  
Han Seok Seo ◽  
Jong Ho Lee ◽  
...  
Keyword(s):  
Power Density ◽  
Output Power ◽  
High Purity ◽  
Maximum Output Power ◽  
Drain Current ◽  
Maximum Output ◽  
Power Gain ◽  
Si Substrates ◽  
Class A ◽  
Current Instability

Planar MESFETs were fabricated on high-purity semi-insulating (HPSI) 4H-SiC substrates. The saturation drain current of the fabricated MESFETs with a gate length of 0.5 μm and a gate width of 100 μm was 430 mA/mm, and the transconductance was 25 mS/mm. The maximum oscillation frequency and cut-off frequency were 26.4 GHz and 7.2 GHz, respectively. The power gain was 8.4 dB and the maximum output power density was 2.8 W/mm for operation of class A at CW 2 GHz. MESFETs on HPSI substrates showed no current instability and much higher output power density in comparison to MESFETs on vanadium-doped SI substrates.

Comparison of Piezoelectric Materials for Vibration Energy Conversion Devices

2006 ◽  
Vol 966 ◽  
Author(s):  
Dongna Shen ◽  
Song-Yul Choe ◽  
Dong-Joo Kim
Keyword(s):  
Energy Conversion ◽  
Power Density ◽  
Polyvinylidene Fluoride ◽  
Piezoelectric Materials ◽  
Fiber Composite ◽  
Maximum Output Power ◽  
Vibration Energy ◽  
Maximum Output ◽  
Mems Devices ◽  
Power Requirement

ABSTRACTPiezoelectric materials have been investigated as vibration energy converters to power wireless devices or MEMS devices due to recent low power requirement of such devices and the development of miniaturization technology. It has shown the potential that piezoelectric power generator can be an alternative to the traditional power source-battery because of facile vibration sources in our environment and the potential elimination of maintenance required for large volume batteries. To date, PZT (Lead Zirconium Titanate) has been commonly exploited as a piezoelectric material for energy conversion since it can generate higher power density even at low-g (< 1 g) vibration environment. Its high fragility, however, can limit its applicability at high-g conditions. Therefore, other types of piezoelectric materials such as polymer and composite are necessary to investigate the applicability at severe vibration conditions. In this study, piezoelectric power generators based on cantilever beam structure were designed, optimized, and fabricated by considering matching the resonant frequency with environmental vibration, achieving maximum output power, and reaching maximum g-value without device failure. As piezoelectric materials, ceramic PZT, polymer PVDF (Polyvinylidene fluoride) and composite MFC (Macro Fiber Composite) were utilized. The energy conversion of all three types of generator devices was systematically evaluated. All three devices were measured to generate enough power density for providing electric energy to wireless sensor or MEMS device. The PZT device shows the highest output energy density and PVDF device has the highest durability to operate at high-g vibration condition.

Influence of electrical impedance and mechanical bistability on Galfenol-based unimorph harvesters

2016 ◽  
Vol 28 (3) ◽  
pp. 421-431 ◽  
Author(s):  
Zhangxian Deng ◽  
Marcelo J Dapino
Keyword(s):  
Power Density ◽  
Output Power ◽  
Maximum Output Power ◽  
Element Model ◽  
Maximum Energy ◽  
Bistable System ◽  
Maximum Output ◽  
Base Excitation ◽  
Frequency Bandwidth ◽  
Electrical Loads

A study on iron-gallium (Galfenol) unimorph harvesters is presented which is focused on extending the power density and frequency bandwidth of these devices. A thickness ratio of 2 (ratio of substrate to Galfenol thickness) has been shown to achieve maximum power density under base excitation, but the effect of electrical load capacitance on performance has not been investigated. This article experimentally analyzes the influence of capacitive electrical loads and extends the excitation type to tip impulse. For resistive-capacitive electrical loads, the maximum energy conversion efficiency achieved under impulsive excitation is 5.93%, while the maximum output power and output power density observed for a 139.5 Hz, 3 [Formula: see text] amplitude sinusoidal base excitation is 0.45 W and 6.88 [Formula: see text], respectively, which are 8% higher than those measured under purely resistive loads. A finite element model for Galfenol unimorph harvesters, which incorporates magnetic, mechanical, and electrical dynamics, is developed and validated using impulsive responses. A buckled unimorph beam is experimentally investigated. The proposed bistable system is shown to extend the harvester’s frequency bandwidth.

STABLE HIGH POWER GaN-ON-GaN HEMT

2004 ◽  
Vol 14 (03) ◽  
pp. 738-744 ◽  
Author(s):  
K. K. CHU ◽  
P. C. CHAO ◽  
J. A. WINDYKA
Keyword(s):  
Power Density ◽  
Output Power ◽  
High Power ◽  
High Performance ◽  
Ambient Conditions ◽  
Free Standing ◽  
Gain Compression ◽  
Power Added Efficiency ◽  
Gan Hemt ◽  
Drain Bias

High power AlGaN/GaN HEMTs on free-standing GaN substrates with excellent stability have been demonstrated for the first time. When operated at a drain bias of 50V, devices without a field plate showed a record CW output power density of 10.0W/mm at 10GHz with an associated power-added efficiency of 45%. The efficiency reaches a maximum of 58% with an output power density of 5.5W/mm under a drain bias of 25V at 10GHz. Long-term stability of device RF operation was also examined. Under ambient conditions, devices biased at 25V and driven at 3dB gain compression remained stable at least up to 1,000 hours, degrading only by 0.35dB in output power. Such results clearly demonstrate the feasibility of GaN - on - GaN HEMT as an alternative device technology to the GaN - on - SiC HEMT in supporting reliable, high performance microwave power applications.

Concurrent dual-band SiGe HBT power amplifier for Wireless applications

2009 ◽  
Vol 1 (2) ◽  
pp. 117-126 ◽  
Author(s):  
Vittorio Camarchia ◽  
Rocco Giofrè ◽  
Iacopo Magrini ◽  
Luca Piazzon ◽  
Alessandro Cidronali ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Orthogonal Frequency Division Multiplexing ◽  
Maximum Output Power ◽  
System Level ◽  
Dual Band ◽  
Maximum Output ◽  
System Architectures ◽  
Power Added Efficiency ◽  
Mode Operation

This paper presents an investigation of a concurrent low-cost dual-band power amplifier (PA) fabricated in SiGe technology, able to simultaneously operate at two frequencies of 2.45 and 3.5-GHz, including an evaluation of its system level performance potentiality. Taking into account the technology novelty and the lack of device characterization and modeling, a hybrid (MIC) approach has been adopted both for a fast prototyping of the PA and for the evaluation of the device potentiality based on an extensive linear and nonlinear characterization. The comparison of PA performance in single-band or concurrent mode operation will be presented. In particular, the measured PA prototype shows an output power of 17.2 and 17-dBm at a 1-dB compression point, at 2.45 and 3.5-GHz, respectively, for CW single-mode operation, with a power added efficiency around 20%. System-level analysis predicts that, when the PA is operated under the 20-MHz Orthogonal Frequency-Division Multiplexing (OFDM) concurrent signals, the maximum output power levels to maintain the Error Vector Magnitude (EVM) within 5% are 11 and 3.5-dBm at 2.45 and 3.5-GHz, respectively. Moreover, new concepts and possible new system architectures for the development of the next generation of the multi-band transceiver front-end will be provided with an extensive system-level evaluation of the amplifier.

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