Effects of Growth Parameters on Surface-morphological, Structural and Electrical Properties of Mo Films by RF Magnetron Sputtering

2008 ◽  
Vol 1123 ◽  
Author(s):  
Shou-Yi Kuo ◽  
Liann-Be Chang ◽  
Ming-Jer Jeng ◽  
Wei-Ting Lin ◽  
Yong-Tian Lu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Growth Parameters ◽  
Soda Lime ◽  
Rf Magnetron Sputtering ◽  
Soda Lime Glass ◽  
Working Pressure ◽  
Soda Lime Glass Substrate ◽  
X Ray

AbstractThis work reports on the fabrication and characterization of Mo thin films on soda-lime glass substrate grown by reactive RF magnetron sputtering. Film thickness was measured by x-ray step surface profiler. The structural properties and surface morphology were analyzed by x-ray diffraction (XRD), atomic force microscope (AFM) and scanning electron microscopy (SEM). Electrical properties were measured by four-point probe. It was found that the growth parameters, such as argon flow rate, RF power, film thickness, have significant influences on properties of Mo films. The strain on films revealed the complicated relationship with the working pressure, which might be associated with micro structures and impurities. In order to improve the adhesion and electricity, we adopted a two-pressure deposition scheme. The optimal thickness and sheet resistance are νm and 0.12 ω The mechanisms therein will be discussed in detail. Furthermore, we also investigated the diffusion property of Na ion of double Mo films sputtered on soda-lime glass. Our experimental results could lead to better understanding for improving further CIGS-based photovoltaic devices.

GROWTH OF AZO FILMS ON BUFFER LAYERS BY RF MAGNETRON SPUTTERING

2010 ◽  
Vol 24 (31) ◽  
pp. 3033-3040 ◽  
Author(s):  
C. W. CHEN ◽  
C. H. TSENG ◽  
C. Y. HSU ◽  
C. P. CHOU ◽  
K. H. HOU
Keyword(s):  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Sheet Resistance ◽  
Soda Lime ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Visible Range ◽  
Soda Lime Glass ◽  
Soda Lime Glass Substrate ◽  
Al Thin Film

Al 2 O 3-doped zinc oxide (in AZO, the Al 2 O 3 contents are approximately 2 wt.%) films have been grown by radio frequency (RF) magnetron sputtering at room temperature under varied sputtering pressures ranging from 3.5–15 mTorr. The electrical resistivity of AZO films is about 2.22×10-3 Ωcm (sheet resistance ~ 89 Ω/square for a thickness ~ 250 nm), and the visible range transmittance is about 80% at the argon sputtering pressure of 15 mTorr and a RF power of 100 W. This study analyzes the structural, morphological, electrical and optical properties of AZO thin films grown on soda-lime glass substrate with 2, 5, and 10 nm thick Al buffer layers (and SiO 2 buffer). For the films deposited on the 2 nm thick Al buffer layer, we obtained a c-axis-oriented AZO/ Al thin film on glass with the XRD full-width at half maximum (FWHM) of 0.31 and root mean square (RMS) surface roughness of about 3.22 nm. The lowest resistivity of 9.46×10-4 Ωcm (sheet resistance ~ 37.87 Ω/square for a thickness ~ 250 nm) and a high transmittance (80%) were obtained by applying a 2 nm thick Al buffer layer. In contrast, the resistivity was slightly increased by applying the SiO 2 buffer layer.

scholarly journals ZnO:Al Grown by Sputtering from Two Different Target Sources: A Comparison Study

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Abdalla A. Alnajjar
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Transparent Conductive Oxide ◽  
Soda Lime ◽  
Rf Magnetron Sputtering ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Ceramic Targets

Al-doped ZnO thin films were deposited from two different targets. Ceramic targets were used in RF magnetron sputtering, whereas pulsed magnetron sputtering was used to grow films from powder targets. ZnO:Al films with different thicknesses were sputtered directly on soda-lime glass substrates. The film thickness was in the 0.04–2.0 μm range. The microstructure, such as the grain size and the texture, of the two differently grown ZnO:Al transparent conductive oxide films of different thickness, was studied using X-ray diffractionθ/2θscans. The optical properties, such as the transmittance and reflectance, were measured using a UV-Vis-NIR spectrometer. Further, the sheet resistance, resistivity, carrier concentration, and Hall mobility of these ZnO:Al thin films were measured as a function of film thickness. These results obtained from the two different deposition techniques were compared and contrasted.

scholarly journals Characterization of MgO:Cd thin films grown by SILAR method

2018 ◽  
Vol 96 (7) ◽  
pp. 804-809 ◽  
Author(s):  
Harun Güney ◽  
Demet İskenderoğlu
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Soda Lime ◽  
Morphological Properties ◽  
Emission Region ◽  
Soda Lime Glass ◽  
Silar Method ◽  
Soda Lime Glass Substrate ◽  
X Ray ◽  
Cd Doping

The undoped and 1%, 2%, and 3% Cd-doped MgO nanostructures were grown by SILAR method on the soda lime glass substrate. X-ray diffractometer (XRD), ultraviolet–visible spectrometer, scanning electron microscope, photoluminescence (PL), and X-ray photoelectron spectroscopy measurements were taken to investigate Cd doping effects on the structural, optical, and morphological properties of MgO nanostructures. XRD measurements show that the samples have cubic structure and planes of (200), (220) of MgO and (111), (200), and (220) of CdO. It was observed that band gaps increase with rising Cd doping rate in MgO thin film. The surface morphology of samples demonstrates that MgO nanostructures have been affected by the Cd doping. PL measurements show that undoped and Cd-doped MgO thin films can radiate in the visible emission region.

scholarly journals Processing and Study of Optical and Electrical Properties of (Mg, Al) Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering for Photovoltaic Application

Materials ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2146 ◽  
Author(s):  
Chayma Abed ◽  
Susana Fernández ◽  
Selma Aouida ◽  
Habib Elhouichet ◽  
Fernando Priego ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Band Gap Energy ◽  
Thin Layers ◽  
Working Pressure ◽  
Hall Effect Measurements ◽  
Diffraction Patterns

In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputtering from a conventional solid state target based on ZnO:MgO:Al2O3 (10:2 wt %) material. The films were deposited on glass and silicon substrates at the different working pressures of 0.21, 0.61, 0.83 and 1 Pa, 300 °C and 250 W of power. X-ray diffraction patterns (XRD), atomic force microscopy (AFM), UV-vis absorption and Hall effect measurements were used to evaluate the structural, optical, morphological and electrical properties of thin films as a function of the working pressure. The optical properties of the films, such as the refractive index, the extinction coefficient and the band gap energy were systematically studied. The optical band gap of thin films was estimated from the calculated absorption coefficient. That parameter, ranged from 3.921 to 3.655 eV, was hardly influenced by the working pressure. On the other hand, the lowest resistivity of 8.8 × 10−2 Ω cm−1 was achieved by the sample deposited at the lowest working pressure of 0.21 Pa. This film exhibited the best optoelectronic properties. All these data revealed that the prepared thin layers would offer a good capability to be used in photovoltaic applications.

scholarly journals Optical Properties of Ta2O5/SiO2 Antireflection Coating System

2011 ◽  
Vol 2-3 ◽  
pp. 167-171
Author(s):  
Shao Ni Sun ◽  
Li Yang Xie ◽  
Yi Chen Zhang ◽  
Ying Huang
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Growth Parameters ◽  
Rf Magnetron Sputtering ◽  
Antireflection Coating ◽  
Coating System ◽  
Working Pressure ◽  
Pressure Oxygen ◽  
K9 Glass

The Ta2O5/SiO2 Multi-layer Antireflection Coating Is Prepared on K9 Glass by RF Magnetron Sputtering Technology in the Experiment. the Growth Parameters Are Changed to Get Multi-layer Antireflection Film with Good Optical Properties. in the Technical Research, the Influence of Various Growth Parameters, Including Working Pressure, Oxygen Content, Substrate Temperature, Etc., on the Optical Properties and Structures of the Coatings Are Studied. Optical Properties and Morphological Features such as Surface, Structure Are Investigated by UV-VIS Spectrophotometer and AFM, Respectively. the Detecting Results Further Verify the Important Influences of Proper Growth Parameters on Optical Properties of Antireflection Coating.

scholarly journals Characteristics of Bilayer Molybdenum Films Deposited Using RF Sputtering for Back Contact of Thin Film Solar Cells

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Sea-Fue Wang ◽  
Hsiao-Ching Yang ◽  
Chien-Fong Liu ◽  
Huy-Yun Y. Bor
Keyword(s):  
Solar Cells ◽  
Rf Sputtering ◽  
Bottom Layer ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Deposition Condition ◽  
Metal Contacts ◽  
Working Pressure ◽  
Soda Lime Glass Substrate ◽  
Sputtering Power

Mo films prepared under a single deposition condition seldom simultaneously obtain a low resistivity and a good adhesion necessary for use in solar cells. In order to surmount the obstacle, bilayer Mo films using DC sputtering at a higher working pressure and a lower working pressure have been attempted as reported in the literature. In this study, RF sputtering with different powers in conjunction with different working pressures was explored to prepare bilayer Mo film. The first bottom layer was grown at a RF sputtering power of 30 W and a working pressure of 12 mTorr, and the second top layer was deposited at 100 W and 4.5 mTorr. The films revealed a columnar growth with a preferred orientation along the (110) plane. The bilayer Mo films reported an electrical resistivity of 6.35 × 10−5 Ω-cm and passed the Scotch tape test for adhesion to the soda-lime glass substrate, thereby qualifying the bilayer Mo films for use as back metal contacts for CIGS substrates.

Nanostructured phothocatalytic TiO2 thin film fabricated by magnetron sputtering on glass

2012 ◽  
Vol 05 ◽  
pp. 661-669 ◽  
Author(s):  
BAHRAM ABDOLLAHI NEJAND ◽  
SOHRAB SANJABI ◽  
VAHID AHMADI
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Photocatalytic Property ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
Soda Lime Glass Substrate ◽  
Layer Deposition ◽  
Photocatalytic Activities

TiO 2 thin film was deposited by a DC reactive magnetron sputtering on ZnO /soda-lime glass substrate and single crystal SiO 2 below 200 °C. ZnO layer was used as a buffer layer. Deposition was performed at Ar + O 2 gas mixture with a pressure of 1.0 Pa and oxygen with a constant pressure of 0.2 Pa. The TiO 2 / ZnO thicknesses were approximately 1000 nm and 80 nm, respectively. As-deposited films were annealed at 400 °C. The structure and morphology of deposited layers were evaluated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The transmittance of the films was measured using ultraviolet–visible light (UV–vis) spectrophotometer. Photocatalytic activities of the samples were evaluated by the degradation of 2-propanol. The microstructure of annealed films was anatase, having improved photocatalytic activity. The surface grain size of TiO 2 thin film after annealing was found about 25-35 nm and crystal size was approximately 8 nm. By using ZnO thin film as buffer layer, the photocatalytic property of TiO 2 films was improved.

Fabrication of Cu2ZnSnS4 Thin Films by Sputtering from a Single Quaternary Chalcogenide Compound

2014 ◽  
Vol 787 ◽  
pp. 31-34 ◽  
Author(s):  
Jian Sheng Wang ◽  
Song Li ◽  
Jia Jia Cai ◽  
Yu Ping Ren ◽  
Gao Wu Qin
Keyword(s):  
Thin Films ◽  
Stoichiometric Composition ◽  
Soda Lime ◽  
Rf Magnetron Sputtering ◽  
Soda Lime Glass ◽  
Second Phase ◽  
Soda Lime Glass Substrate ◽  
One Step ◽  
Columnar Grain ◽  
Chalcogenide Compound

Cu2ZnSnS4thin films were fabricated by one-step RF magnetron sputtering of a single quaternary Cu2ZnSnS4(CZTS) chalcogenide target on Mo/soda lime glass substrate, followed by post sulfurization using S vapor obtained from elemental S powders. The films were thermally annealed in Ar atmosphere to improve the crytallinity. The sulfurization temperature was fixed at 550°C. Both as-deposited and post-sulfured samples are close to the stoichiometric composition, meanwhile without any second phase was detected by XRD. As-deposited film has a compact columnar grain characteristic. Although crystallinity was improved with increasing annealing time, this characteristic disappeared after post-sulfured.

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