X-Ray Photoemission Investigation of Excimer Laser Induced Etching of InP

ABSTRACTArF excimer laser induced etching of InP in various etch gases (HBr, HCI, CI2) is discussed with regard to its spatial resolution capability. X-ray photoemission spectra and large-area etch rate measurements published before lead to fundamental understanding and interpretation of the characteristics of etched test structures. HBr and HCI require gas phase photodissociation. CI2' in contrast, has the advantage to react spontaneously.

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High Resolution Displacement of Functional Groups onto Fluorocarbon Resin Surface by Using ArF Excimer Laser

MRS Proceedings ◽

10.1557/proc-451-521 ◽

1996 ◽

Vol 451 ◽

Cited By ~ 1

Author(s):

T. Shimizu ◽

M. Murahara

Keyword(s):

Contact Angle ◽

High Resolution ◽

Laser Beam ◽

Thin Layer ◽

Functional Groups ◽

Excimer Laser ◽

Laser Fluence ◽

Large Area ◽

Three Solutions ◽

Arf Excimer Laser

ABSTRACTA Fluorocarbon resin surface was selectively modified by irradiation with a ArF laser beam through a thin layer of NaAlO2, B(OH)3, or H2O solution to give a hydrophilic property. As a result, with low fluence, the surface was most effectively modified with the NaAlO2 solution among the three solutions. However, the contact angle in this case changed by 10 degrees as the fluence changed only 1mJ/cm2. When modifying a large area of the surface, high resolution displacement could not be achieved because the laser beam was not uniform in displacing functional groups. Thus, the laser fluence was successfully made uniform by homogenizing the laser beam; the functional groups were replaced on the fluorocarbon resin surface with high resolution, which was successfully modified to be hydrophilic by distributing the laser fluence uniformly.

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Effects of synthesis conditions on existence and nonexistence of the ArF excimer laser and x-ray inducedB2α band in type-III fused silicas

Physical Review B ◽

10.1103/physrevb.52.3241 ◽

1995 ◽

Vol 52 (5) ◽

pp. 3241-3247 ◽

Cited By ~ 16

Author(s):

Nobu Kuzuu ◽

Masataka Murahara

Keyword(s):

Excimer Laser ◽

X Ray ◽

Synthesis Conditions ◽

Type Iii ◽

Existence And Nonexistence ◽

Arf Excimer Laser

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Surface Processes in Laser-Induced Etching of Silicon Studied by X-Ray Photoelectron Spectroscopy

MRS Proceedings ◽

10.1557/proc-75-357 ◽

1986 ◽

Vol 75 ◽

Cited By ~ 5

Author(s):

Masataka Hirose ◽

Tsuyoshi Ogura

Keyword(s):

Photoelectron Spectroscopy ◽

Silicon Surface ◽

Valence Electron ◽

Surface Region ◽

Reaction Products ◽

X Ray ◽

Photochemical Etching ◽

Arf Excimer Laser ◽

Laser Induced Etching

AbstractA silicon surface exposed to NF3 gas was irradiated with an ArF excimer laser beam. The reaction products on the surface and their chemical bonding features were studied by in-situ x-ray photoelectron spectroscopy at each step of the photochemical etching. It was found that SiFX (1≤X≤4) units and molecular fluorine exist in the reacting surface region. The surface Si-Si bonds attacked with fluorine are progressively fluorinated and the final surface products are mainly SiF4 and SiF3. A possible mechanism of fluorine etching is discussed on the basis of a valence electron transfer (VET) model.

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Quantitative Study of the Role of Supersaturation during Sublimation Growth on the Yield of 50 mm 3C-SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.821-823.77 ◽

2015 ◽

Vol 821-823 ◽

pp. 77-80 ◽

Cited By ~ 8

Author(s):

Dominik Rankl ◽

Valdas Jokubavicius ◽

Mikael Syväjärvi ◽

Peter J. Wellmann

Keyword(s):

Gas Phase ◽

Nucleation And Growth ◽

Vapor Transport ◽

Quasi Equilibrium ◽

Equilibrium Thermodynamic ◽

Large Area ◽

X Ray ◽

Thermodynamic Conditions ◽

Sublimation Growth

We have investigated the growth of 3C-SiC using sublimation growth in the temperature range from 1800°C to 1950°C. The supersaturation was determined using numerical modeling of the temperature field and gas phase composition by applying quasi-equilibrium thermodynamic conditions. Analysis of the 3C-SiC yield was carried out by optical microscopy, optical absorption, Raman spectroscopy and x-ray analysis. Quantitative data on supersaturation are compared with most stable 3C-SiC nucleation and growth condition. Finally the application to large area growth in a physical vapor transport growth reactor is briefly addressed.

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Excimer laser-assisted etching of polysilicon at 193 nm

Journal of Materials Research ◽

10.1557/jmr.1987.0895 ◽

1987 ◽

Vol 2 (6) ◽

pp. 895-901 ◽

Cited By ~ 5

Author(s):

M. D. Armacost ◽

S. V. Babu ◽

S. V. Nguyen ◽

J. F. Rembetski

Keyword(s):

Gas Phase ◽

Excimer Laser ◽

Cross Section ◽

Thermal Effects ◽

Etch Rate ◽

Sem Analysis ◽

Surface Roughening ◽

193 Nm ◽

Limiting Value ◽

Scanning Electron

Excimer laser-assisted etching of polysilicon at 193 nm was studied in the presence of CF3Br, CF2Cl2, and NF3. In the presence of 193 nm radiation, CF3Br showed some propensity to etch polysilicon, while CF2Cl2 did not show any appreciable etching. In the presence of NF3, maximum etch rates of 0.6 Å/pulse were obtained for pressures greater than 500 Torr and fluences exceeding 200 mJ/(cm2 pulse). The etch rate increased with both fluences and pressure to a limiting value of 0.6 Å/pulse. An adsorptive etch mechanism was proposed, where NF3 molecules diffuse to the surface, adsorb, and then react after absorbing laser radiation. Thermal effects enhance this process and appear to dominate at lower pressures (<400 Torr) and higher fluences. Etching caused by the gas phase formation of F atoms is minimal due to the low absorption cross section of NF3 at 193 nm. Etching of submicron profiles in polysilicon was also examined. Polysilicon samples masked by patterned SiO2 were exposed to NF3 and 193 nm ArF radiation. Subsequent scanning electron microscopy (SEM) analysis demonstrated directional etching with some surface roughening.

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On the long pulse operation of an x-ray preionized, gas discharge pumped ArF excimer laser

Applied Physics Letters ◽

10.1063/1.124587 ◽

1999 ◽

Vol 75 (8) ◽

pp. 1033-1035 ◽

Cited By ~ 3

Author(s):

L. Feenstra ◽

H. M. J. Bastiaens ◽

P. J. M. Peters ◽

W. J. Witteman

Keyword(s):

Excimer Laser ◽

Gas Discharge ◽

Pulse Operation ◽

X Ray ◽

Arf Excimer Laser ◽

Long Pulse

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Design and theoretical investigation of a digital x-ray detector with large area and high spatial resolution

10.1117/12.741290 ◽

2007 ◽

Author(s):

Jianbao Gui ◽

Jinchuan Guo ◽

Qinlao Yang ◽

Xin Liu ◽

Hanben Niu

Keyword(s):

Spatial Resolution ◽

Theoretical Investigation ◽

High Spatial Resolution ◽

Large Area ◽

X Ray

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Single-Crystal Silicon Etching Characteristics Using Excimer Laser Cℓ2 GAS

MRS Proceedings ◽

10.1557/proc-29-167 ◽

1983 ◽

Vol 29 ◽

Cited By ~ 19

Author(s):

T. Arikado ◽

M. Sekine ◽

H. Okano ◽

Y. Horiike

Keyword(s):

Single Crystal ◽

Gas Phase ◽

Excimer Laser ◽

Plasma Etching ◽

Etch Rate ◽

Single Crystal Silicon ◽

Silicon Etching ◽

Crystal Silicon ◽

Direct Irradiation ◽

P Type

ABSTRACTSingle-crystal Si etching characteristics using an excimer laser (308 nm, XeCℓ) in the Cℓ2 gas have been studied. In lightly doped n-type and p-type Si, the etch rate of (100) is higher than that of (111), thus the (111) sidewall appears clearly for the irradiation to (100), while both orientations show almost the same etch rates in n+-doped Si. The n-type Si is etched spontaneously even by photo-dissociated Cℓ radicals generated in the gas phase, but no p-type Si etching occurs without direct irradiation. In addition, both types of etch rate-dependence on sheet resistance demonstrate that the number of electrons in the conduction band plays an essential role in the Si etching. This fact supports the field-assisted mechanism in the plasma etching proposed by Winters.

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