The Role of Charged Point Defects on the Diffusion Behavior of Silicon in GaAs

1989 ◽  
Vol 163 ◽  
Author(s):  
Jeffrey J. Murray ◽  
Michael D. Deal ◽  
David A. Stevenson
Keyword(s):  
Point Defects ◽  
Effective Diffusivity ◽  
Diffusion Behavior ◽  
Si Doping ◽  
Local Point ◽  
Level Model ◽  
Si Doped ◽  
Charged Point ◽  
Grown Structure

AbstractA multilayered Si doped MBE structure was used to study the effective diffusivity of Si and the results are modeled with an (n/ni)2 dependence over the temperature range of 750°C – 950°C. An activation energy, Ea′, of 4.0 eV is obtained which is higher than normally reported in the literature. This higher Ea′ value results from appropriate accounting of the temperature dependence of ni, which is often neglected in the expression for Deff. Si diffusion at a buried n+/n++junction of a MOCVD grown structure also follows an (n/ni)2 dependence. These results support a Fermi-level model of Si diffusion in GaAs and suggest that the local point defect chemistry of the GaAs, through Si doping, is responsible for this diffusion behavior, regardless of the proximity to the surface.

scholarly journals Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN

Nanomaterials ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 1026 ◽  
Author(s):  
Feng Liang ◽  
Degang Zhao ◽  
Desheng Jiang ◽  
Zongshun Liu ◽  
Jianjun Zhu ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Blue Luminescence ◽  
Acceptor Doping ◽  
Yellow Luminescence ◽  
Carbon Impurity ◽  
Si Doping ◽  
Close Relationship ◽  
Si Doped ◽  
The Relationship

Both yellow luminescence (YL) and blue luminescence (BL) bands of GaN films have been investigated for decades, but few works report the relationship between them. In this study, two sets of GaN samples grown via metalorganic chemical vapor deposition (MOCVD) were investigated. A close relationship was found between the YL and BL bands for unintentionally doped GaN and Si-doped GaN samples, both of which were grown without intentional acceptor doping. It was found that the intensity ratio of blue luminescence to yellow luminescence (IBL/IYL) decreases sharply with the increase in carbon impurity concentration, even though both IBL and IYL increase obviously. It was also found that IBL/IYL decreases sharply with the increase in Si doping concentration. It is suggested that the C and Si impurities play important role in linkage and competition of the blue and yellow luminescence.

Slow Positron Studies of Defects in Si-Doped GaAs

2006 ◽  
Vol 251-252 ◽  
pp. 51-58
Author(s):  
B. Godbole ◽  
N. Badera ◽  
S.B. Shrivastava ◽  
K.P. Joshi
Keyword(s):  
Point Defects ◽  
Shape Parameter ◽  
Positron Lifetime ◽  
Doppler Broadening ◽  
Slow Positron ◽  
Si Doping ◽  
S Parameter ◽  
Trapping Model ◽  
Si Doped ◽  
Line Shape Parameter

The mechanism of slow positron annihilation in Si-doped GaAs has been discussed in terms of the diffusion trapping model (DTM). The trapping of positrons has been considered in SiAs acceptors i.e. shallow defects and in VGa-SiGa vacancy complexes. The model has been used to obtain the Doppler broadening line shape parameter (S-parameter) and average positron lifetime in Si-doped GaAs, for a temperature range 20K to 290K and for different doping concentrations. Observations are made regarding the effect of doping on the nature and concentration of point defects. The change in point defect concentration due to Si- doping has been found to be proportional to the doping concentration. The effect of detrapping from the shallow defects has been found to be important at higher temperatures.

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Role of induced quadrupoles in the simulation of intrinsic point defects in AgCl and NaCl

1993 ◽  
Vol 48 (10) ◽  
pp. 6839-6853 ◽  
Author(s):  
Radha D. Banhatti ◽  
Y. V. G. S. Murti
Keyword(s):  
Point Defects ◽  
Intrinsic Point Defects

Doping Study of Se into AlGaAs Layers Grown by MBE, and their Application to HEMT Structures

1988 ◽  
Vol 144 ◽  
Author(s):  
T. Maed ◽  
T. Ishikawa ◽  
K. Kondo
Keyword(s):  
Molecular Beam ◽  
Electron Gas ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Si Doping ◽  
Se Doping ◽  
Si Doped ◽  
Dx Center ◽  
Dimensional Electron Gas ◽  
Dopant Source

ABSTRACTWe studied doping Se into AlGaAs layers using PbSe as a dopant source for molecular beam epitaxy (MBE). Good controllability and abruptness equivalent to that of Si-doping were obtained. Se-doping was successfully applied to HEMT structures with reduced DX center concentrations. The two dimensional electron gas (2DEG) characteristics of these structures were comparable to those of Si-doped structures.

scholarly journals Point Defects in InGaN/GaN Core–Shell Nanorods: Role of the Regrowth Interface

Nano Express ◽  
2021 ◽  
Vol 2 (1) ◽  
pp. 014005 ◽  
Author(s):  
K Loeto ◽  
G Kusch ◽  
P-M Coulon ◽  
SM Fairclough ◽  
E Le Boulbar ◽  
...  
Keyword(s):  
Point Defects ◽  
Core Shell
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