The Graphitization of Amorphous Hydrogenated Carbon Films During Thermal Annealing

1989 ◽  
Vol 164 ◽  
Author(s):  
Sam Shuhan Lin ◽  
Shuguang Chen ◽  
Dang Mo
Keyword(s):  
Electrical Conductivity ◽  
Raman Spectroscopy ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Spectroscopic Ellipsometry ◽  
Carbon Films ◽  
Infrared And Raman Spectra ◽  
Optical And Electrical Properties ◽  
Infrared And Raman Spectroscopy ◽  
Amorphous Hydrogenated Carbon

AbstractEffects of thermal annealing on the properties of amorphous hydrogenated carbon films have been studied with spectroscopic ellipsometry, electrical conductivity, and infrared and Raman spectroscopy. The results show that not only the optical and electrical properties, but also the infrared and Raman spectra, change significantly after annealing above 400°C. We suggest that thermal annealing makes amorphous hydrogenated carbon films more graphite-like, and the observed changes in the microstructure cause the changes in the optical and electrical properties.

Effect of Gamma Radiation on Structural, Optical and Electrical Properties of nanostructured CdHgTe Thin Films

2018 ◽  
Vol 1 (1) ◽  
pp. 26-31 ◽  
Author(s):  
B Babu ◽  
K Mohanraj ◽  
S Chandrasekar ◽  
N Senthil Kumar ◽  
B Mohanbabu
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Gamma Radiation ◽  
Glass Substrate ◽  
Gamma Ray ◽  
Optical And Electrical Properties ◽  
Deposition Technique ◽  
Polycrystalline Structure ◽  
Dc Electrical Conductivity

CdHgTe thin films were grown onto glass substrate via the Chemical bath deposition technique. XRD results indicate that a CdHgTe formed with a cubic polycrystalline structure. The crystallinity of CdHgTe thin films is gradually deteriorate with increasing the gamma irradiation. EDS spectrums confirms the presence of Cd, Hg and Te elements. DC electrical conductivity results depicted the conductivity of CdHgTe increase with increasing a gamma ray dosage

Polymorphous Silicon Films Produced in Large Area Reactors by PECVD at 27.12 MHz and 13.56 MHz

2003 ◽  
Vol 762 ◽  
Author(s):  
H. Águas ◽  
L. Raniero ◽  
L. Pereira ◽  
E. Fortunato ◽  
P. Roca i Cabarrocas ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Spectroscopic Ellipsometry ◽  
Conductivity Measurements ◽  
Large Area ◽  
Structural Characterisation ◽  
Hydrogen Dilution ◽  
Infrared And Raman Spectroscopy ◽  
Impedance Probe ◽  
Si Films ◽  
Probe Measurements

AbstractThis work refers to a study performed on polymorphous silicon (pm-Si:H) at excitation frequencies of 13.56 and 27.12 MHz in a large area PECVD reactor. The plasma was characterised by impedance probe measurements, aiming to identify the plasma conditions that lead to produce pm-Si:H films. The films produced were characterised by spectroscopic ellipsometry, infrared and Raman spectroscopy and hydrogen exodiffusion experiments, which are techniques that permit the structural characterisation of the pm-Si films and to study the possible differences between the films deposited at 13.56 and 27.12 MHz. Conductivity measurements were also performed to determine the transport properties of the films produced. The set of data obtained show that the 27.12 MHz pm-Si:H can be grown at higher rates with less hydrogen dilution and power density, being the resulting films denser, chemically more stable and with improved performances than the pm-Si:H films grown at 13.56 MHz.

Optical properties of amorphous hydrogenated carbon films: A spectroscopic ellipsometry study

1987 ◽  
Vol 2 (5) ◽  
pp. 645-647 ◽  
Author(s):  
Shuhan Lin ◽  
Shuguang Chen
Keyword(s):  
Optical Properties ◽  
Spectroscopic Ellipsometry ◽  
Carbon Films ◽  
Index Of Refraction ◽  
The Real ◽  
Complex Index ◽  
Tentative Explanation ◽  
Amorphous Hydrogenated Carbon ◽  
Ellipsometry Data ◽  
Complex Index Of Refraction

Optical properties of plasma-deposited amorphous hydrogenated carbon films were studied by spectroscopic ellipsometry. From the ellipsometry data, the real and imaginary parts, n and k, of the complex index of refraction of the film have been deduced for photon energies between 2.0 and 4.0 eV for as-grown as well as for thermally annealed films. Here n and k showed considerable variation with subsequent annealing, even under 400°C. A tentative explanation of the results is proposed.

Structure, Optical and Electrical Properties of Pulsed Laser Deposited and Ion Beam Deposited CNx Films

1997 ◽  
Vol 498 ◽  
Author(s):  
K. F. Chan ◽  
X.-A. Zhao ◽  
C. W. Ong
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Film Structure ◽  
Laser Deposition ◽  
Optical And Electrical Properties ◽  
Ion Beam Deposition ◽  
Valence Bands ◽  
Beam Deposition

ABSTRACTCNx films were deposited using pulsed laser deposition (PLD) and ion beam deposition (IBD). The PLD films deposited at substrate temperature Ts = 25°C and high N2 partial pressure have the highest N content (fN) and polymerlike structure, accompanied by large band gap (Eg) and low electrical conductivity (σroom). The rise in Ts lowers fN and induces graphitization of the film structure, so Eg reduces and σroom increases. IBD (with and without N2+ assist) films are graphitic. Higher Ts further enhances the graphitization of the film structure, such that the conduction and valence bands overlap, and σroom approaches to that of graphite. No evidence was found to show successful formation of the hypothetical β-C3N4 phase in the films.

Electrical conductivity of as‐prepared and annealed amorphous hydrogenated carbon films

1990 ◽  
Vol 8 (3) ◽  
pp. 1509-1513 ◽  
Author(s):  
A. Reyes‐Mena ◽  
J. González‐Hernández ◽  
R. Asomoza ◽  
B. S. Chao
Keyword(s):  
Electrical Conductivity ◽  
Carbon Films ◽  
Amorphous Hydrogenated Carbon
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