Atomic Interdiffusion in Au/Amorphous Ni-Nb/Semiconductor Systems
Keyword(s):
Backscattering measurements were performed to assess the stability of amorphous Ni-Nb for contacts of high temperature electronics. The interdiffusion of amorphous Ni-Nb and three semiconductors—silicon, GaAs and GaP—was measured to study the stability for primary metallization applications. Diffusion of gold with amorphous Ni-Nb and the same three semiconductors was also investigated in order to address diffusion barrier applications of amorphous metals. The results indicate that the use of amorphous Ni-Nb as a contact or a diffusion barrier could extend the useful operation temperature range for GaP devices to above 550°C.
2013 ◽
Vol 2013
(HITEN)
◽
pp. 000290-000297
1970 ◽
Vol 28
◽
pp. 444-445
1990 ◽
Vol 48
(4)
◽
pp. 664-665
Keyword(s):
1993 ◽
2000 ◽