Temperature Dependent Current-Voltage Characteristics of TiSi2/n+/p-Si Shallow Junctions

1990 ◽  
Vol 181 ◽  
Author(s):  
Bhupen Shah ◽  
N.M. Ravindra
Keyword(s):  
Ion Implantation ◽  
Band Gap ◽  
Carrier Concentration ◽  
Temperature Dependent ◽  
Si Substrates ◽  
Current Voltage ◽  
Shallow Junctions ◽  
Current Voltage Characteristics ◽  
Band Gap Narrowing ◽  
Ti Films

ABSTRACTModelling of temperature dependent current-voltage characteristics of TiSi2/n+/p-Si shallow junctions has been presented here. The formation of shallow pn junctions, by ion implantation of As+ through Ti films evaporated on p-Si substrates has been performed in these experiments. The temperature dependent factors such as band gap narrowing, intrinsic carrier concentration, mobilities and diffusivities are considered in the model.

Process and Simulation of TiSi2/n+/p Silicon Shallow Junctions

1991 ◽  
Vol 235 ◽  
Author(s):  
Ying Wu ◽  
W. Savin ◽  
T. Fink ◽  
N. M. Ravindra ◽  
R. T. Lareau ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Furnace Annealing ◽  
Si Substrates ◽  
Conventional Furnace ◽  
Mass Spec ◽  
Current Voltage ◽  
Shallow Junctions ◽  
Current Voltage Characteristics ◽  
Secondary Ion

ABSTRACTExperimental analysis and simulation of the formation and electrical characterization of TiSi2/+/p-Si shallow junctions are presented here. The formation of shallow n+-p junction, by ion implantation of As through Ti films evaporated on p-Si substrates followed by Rapid Thermal Annealing (RTA) and conventional furnace annealing has been performed in these experiments. Structural techniques such as Secondary Ion Mass Spec-troscopy (SIMS) and Rutherford Backscattering (RBS) experiments have been employed to characterize these devices. RUMP simulations were used to analyze and interpret the RBS data. Current-voltage characteristics have been simulated using PISCES simulator.

Si1−xGex Bulk Crystals Growth and PN Junction Formation by Diffusing Phosphorus

1999 ◽  
Vol 607 ◽  
Author(s):  
S. Kato ◽  
T. Horikoshi ◽  
T. Ohkubo ◽  
T. Iida ◽  
Y. Takano
Keyword(s):  
Silicon Germanium ◽  
Bulk Crystals ◽  
Temperature Dependent ◽  
Alloy Scattering ◽  
Self Diffusion ◽  
Pn Junction ◽  
Current Voltage ◽  
Vertical Bridgman ◽  
Current Voltage Characteristics ◽  
P Type

AbstractThe bulk crystal of silicon germanium was grown by vertical Bridgman method with germanium composition, x, varying from 0.6 to 1.0. The temperature dependent variation of the mobility is indicative of alloy scattering dominantly for the bulk wafer. Phosphorus was diffused in as-grown p-type bulk wafer at 850 °C to form pn-junction, and the diffusion coefficient of phosphorus was evaluated as a function of x. The diffusion behavior of phosphorus in silicon germanium is closely correlated with the germanium self-diffusion with changing x. For specimens with lower content x, P concentration profiles indicated “kink and tail” shape, while it was not observed for higher x. For current-voltage characteristics measurement, an ideality factor was obtained.

Ferroelectric Property and Microstructures of La-Doped Bi4Ti3O12 Thin Films

2013 ◽  
Vol 537 ◽  
pp. 114-117
Author(s):  
X.A. Mei ◽  
Rui Fang Liu ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Si Substrates ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
La Doped

La-doped bismuth titanate (Bi4-xLaxTi3O12: BLT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-V hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BLT ceramic with x=0.75 were above 20μC/cm2 and 85KV/cm , respectively.

Transport Properties and Conduction Band Offset of n-ZnO/n-6H-SiC Heterostructures

2006 ◽  
Vol 957 ◽  
Author(s):  
Yahya Alivov ◽  
Xiao Bo ◽  
Fan Qian ◽  
Daniel Johnstone ◽  
Cole Litton ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Band Offset ◽  
Measured Temperature ◽  
Temperature Dependent ◽  
Conduction Band Offset ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

ABSTRACTThe conduction band offset of n-ZnO/n-6H-SiC heterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured. Temperature dependent current-voltage characteristics, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25 eV, 1.1 eV, and 1.22 eV, respectively.

Electrical Injection and Transport in Films of Semiconductor Nanocrystals

1999 ◽  
Vol 571 ◽  
Author(s):  
D.S. Ginger ◽  
N.C. Greenham
Keyword(s):  
Semiconductor Nanocrystals ◽  
Cdse Nanocrystals ◽  
Temperature Dependent ◽  
Metal Electrodes ◽  
Current Voltage ◽  
Disordered Films ◽  
Effective Mobility ◽  
Current Voltage Characteristics ◽  
Space Charge Limited Currents ◽  
Effective Carrier

ABSTRACTWe study injection and transport in thin disordered films of CdSe nanocrystals between metal electrodes, We investigate the current-voltage characteristics of these devices as a function of electrode material, nanocrystal size, and temperature. We also measure the photocurrent response of these devices, and find that the photocurrent action spectra follow the quantum-confined absorption spectra of the nanocrystals. For dissimilar top and bottom electrodes, we find that the devices are highly rectifying. By studying space charge limited currents in these devices, we are able to place a lower bound on the effective carrier mobility in such films, and we find that the effective mobility is strongly field dependent. We find that the conductivity is strongly temperature dependent, and is qualitatively consistent with an activated hopping process at temperatures above 180 K.

Large Remanent Polarization of Pm2O3-Doped Bi4Ti3O12 Films

2013 ◽  
Vol 591 ◽  
pp. 104-107
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
C.Q. Huang
Keyword(s):  
Remanent Polarization ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Si Substrates ◽  
Current Voltage ◽  
Layered Perovskite Structure ◽  
Current Voltage Characteristics

Pm-doped bismuth titanate (Pm4-xLaxTi3O12: BPT) and pure Bi4Ti3O12(BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. For the samples with x=0.25, 1.0, and 1.25, the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75, the current-voltage characteristics showed simple ohmic behaviors and their P-V hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT Fims with x=0.75 were above 40μC/cm2 and 60KV/cm , respectively.

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