Heteroepitaxy and Characterisation Of Ge-Rich SiGe Alloys on GaAs

1990 ◽  
Vol 198 ◽  
Author(s):  
R. Venkatasubramanian ◽  
M.L. Timmons ◽  
M. Mantini ◽  
C.T. Kao ◽  
N.I. Parikh
Keyword(s):  
Electron Spectroscopy ◽  
Silicon Content ◽  
Auger Electron ◽  
Alloy Composition ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Gaas Substrates ◽  
Type Conduction

ABSTRACTGrowth of SiGe alloys on GaAs substrates at temperatures as low as 590 °C is described. The growth has been accomplished using the pyrolysis of disilane (Si2H6) and Germane (GeH4) at such temperatures. The layers were characterized electrically and show n-type conduction with a carrier concentration of ~ 1 × 1018 cm−3. The high quality of the SiGe layers are evident in the Rutherford backscattering (RBS) channeling results on SiGe/GaAs structures. A Xmin of 5.6% has been obtained for a Si0.05Ge0 95 layer on GaAs. Xmin increases with increasing silicon content in the SiGe layers. The SiGe alloy layers were studied by x-ray diffraction, and the composition was determined assuming coherent, but tetragonally-distorted growth of SiGe on GaAs. The distortion calculations, based on theoretical elastic-constants, were confirmed using Auger electron spectroscopy to check alloy composition.

Thermodynamically Stable Conducting Films of Intermetallic PtGa2 on Gallium Arsenide

1988 ◽  
Vol 144 ◽  
Author(s):  
Larry P. Sadwick ◽  
Kang L. Wang ◽  
David K. Shuh ◽  
Young K. Kim ◽  
R. Stanley Williams
Keyword(s):  
Gallium Arsenide ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Substrates ◽  
Suitable Temperature

ABSTRACTThe first epitaxial platinum gallium two (PtGa2) films have been grown on gallium arsenide (GaAs) (100) by co-evaporation of the elements under ultra-high vacuum conditions. An electron beam evaporator and a Knudsen cell were used to produce the platinum and gallium beams, respectively. The resulting films and bulk PtGa2 have been characterized by x-ray diffraction, Auger electron spectroscopy, and x-ray photoelectron spectroscopy. The data confirm the PtGa2 stoichiometry and crystal structure of the films, and demonstrate their chemical stability on GaAs (100). This study supports the contention that PtGa2 can be a suitable, temperature stable contact material on GaAs substrates.

The Use of Tris(Trimethylsilyl)Arsine to Deposit GaAs by OMCVD

1990 ◽  
Vol 204 ◽  
Author(s):  
Alan D. Berry ◽  
Andrew P. Purdy ◽  
Richard L. Wells ◽  
James W. Pasterczyk ◽  
James D. Johansen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ambient Pressure ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Substrates ◽  
Low Pressures

ABSTRACTChemical vapor deposition experiments using (Me3Si)3As with either GaCl3 or Me3Ga at ambient pressure have produced films of GaAs on Si and semi-conducting GaAs substrates. The films have been characterized by X-ray diffraction and Auger electron spectroscopy, and each have small amounts of C and O impurities. No desired films were deposited from (C6F5)3GaAs(SiMe3)3 at 500°C and low pressures.

AIN/GaN and AIGaN/GaN Heterostructures Grown by HVPE on SiC Substrates

1997 ◽  
Vol 482 ◽  
Author(s):  
Yu. V. Melnik ◽  
A. E. Nikolaev ◽  
S. I. Stepanov ◽  
A. S. Zubrilov ◽  
I. P. Nikitina ◽  
...  
Keyword(s):  
Growth Rate ◽  
Electron Beam ◽  
Vapor Phase ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Hydride Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Micro Analysis

AbstractGaN, AIN and AIGaN layers were grown by hydride vapor phase epitaxy. 6H-SiC wafers were used as substrates. Properties of AIN/GaN and AIGaN/GaN structures were investigated. AIGaN growth rate was about 1 μm/min. The thickness of the AIGaN layers ranged from 0.5 to 5 μm. The AIN concentration in AIGaN layers was varied from 9 to 67 mol. %. Samples were characterised by electron beam micro analysis, Auger electron spectroscopy, X-ray diffraction and cathodoluminescence.Electrical measurements performed on AIGaN/GaN/SiC samples indicated that undoped AIGaN layers are conducting at least up to 50 mol. % of AIN.

OMCVD of thin films from metal diketonates and triphenylbismuth

1990 ◽  
Vol 5 (6) ◽  
pp. 1169-1175 ◽  
Author(s):  
A. D. Berry ◽  
R. T. Holm ◽  
M. Fatemi ◽  
D. K. Gaskill
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Strontium Barium ◽  
X Ray ◽  
Scanning Electron

Films containing the metals copper, yttrium, calcium, strontium, barium, and bismuth were grown by organometallic chemical vapor deposition (OMCVD). Depositions were carried out at atmospheric pressure in an oxygen-rich environment using metal beta-diketonates and triphenylbismuth. The films were characterized by Auger electron spectroscopy, Nomarski and scanning electron microscopy, and x-ray diffraction. The results show that films containing yttrium consisted of Y2O3 with a small amount of carbidic carbon, those with copper and bismuth were mixtures of oxides with no detectable carbon, and those with calcium, strontium, and barium contained carbonates. Use of a partially fluorinated barium beta-diketonate gave films of BaF2 with small amounts of BaCO3.

Characterization of hydrofluoric acid treated Y–Ba–Cu–O oxides

1989 ◽  
Vol 4 (6) ◽  
pp. 1320-1325 ◽  
Author(s):  
Q. X. Jia ◽  
W. A. Anderson
Keyword(s):  
Hydrofluoric Acid ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Surface Passivation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zero Resistance ◽  
Reaction With Water ◽  
Scanning Electron

Effects of hydrofluoric acid (HF) treatment on the properties of Y–Ba–Cu–O oxides were investigated. No obvious etching of bulk Y–Ba–Cu–O and no degradation of zero resistance temperature were observed even though the oxides were placed into 49% HF solution for up to 20 h. Surface passivation of Y–Ba–Cu–O due to HF immersion was verified by subsequent immersion of Y–Ba–Cu–O in water. A thin layer of amorphous fluoride formed on the surface of the Y–Ba–Cu–O during HF treatment, which limited further reaction between Y–Ba–Cu–O and HF, and later reaction with water. Thin film Y–Ba–Cu–O was passivated by HF vapors and showed no degradation in Tc-zero after 30 min immersion in water. The properties of the surface layer of Y–Ba–Cu–O oxide after HF treatment are reported from Auger electron spectroscopy, x-ray diffraction, and scanning electron microscopy studies.

Self-Lubricating, TiN-MoS2 Composite Coatings Produced by Simultaneous Deposition from Ti((CH3) 2N)4/NH3/MoF6/H2S GAS Mixtures

1994 ◽  
Vol 363 ◽  
Author(s):  
Y. W. Bae ◽  
W. Y. Lee ◽  
T. M. Besmann ◽  
P. J. Blau ◽  
K. L. More ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
Composite Coatings ◽  
Gas Mixtures ◽  
Ambient Condition ◽  
Kinetic Friction ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Computer Controlled

AbstractComposite coatings consisting of discrete phases of TiN and MoS2 were codeposited on graphite substrates from Ti((CH3)2N)4/NH3/MoF6/H2S gas mixtures in a cold-wall reactor at 1073 K and 1.3 kPa. Chemical composition and microstructure of the coatings were characterized by Auger electron spectroscopy, X-ray diffraction, and transmission electron microscopy. Kinetic friction coefficients of the coatings were determined by a computer-controlled friction microprobe and values less than 0.2 were obtained with a type-440C stainless-steel counterface under ambient condition.

scholarly journals Comparison of the Quality of Protein Crystals Grown by CLPC Seeds Method

Crystals ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 501 ◽  
Author(s):  
Li ◽  
Yan ◽  
Liu ◽  
Wu ◽  
Liu ◽  
...  
Keyword(s):  
Diffraction Data ◽  
Protein Crystal ◽  
Protein Crystals ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
High Quality Protein

We present a systematic quality comparison of protein crystals obtained with and without cross-linked protein crystal (CLPC) seeds. Four proteins were used to conduct the experiments, and the results showed that crystals obtained in the presence of CLPC seeds exhibited a better morphology. In addition, the X-ray diffraction data showed that the CLPC seeds method is a powerful tool to obtain high-quality protein crystals. Therefore, we recommend the use of CLPC seeds in preparing high-quality diffracting protein crystals.

Forkation and Oxidation of Titanium Silicide

1986 ◽  
Vol 77 ◽  
Author(s):  
Tzuen-Luh Huang ◽  
Shuit-Tong Lee
Keyword(s):  
High Temperature ◽  
Refractory Metal ◽  
Electron Spectroscopy ◽  
Polycrystalline Silicon ◽  
Auger Electron ◽  
Titanium Silicide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Selective Etch ◽  
Furnace Sintering

ABSTRACTRefractory metal suicides have been used widely in VLSI fabrication, owing to their low resistivity, high-temperature compatibility, and oxidiz-ability. In this work, we have studied the titanium suicide formation, using a rapid thermal processor (RTP). Isothermal and isochronal sintering experiments were carried out to determine the appropriate process steps. The selective etch of the unreacted Ti was characterized. The sintered films were characterized by four-point probe, X-ray diffraction, and Auger electron spectroscopy. We also studied the oxidation at 800–1000°C of Ti suicide formed by sintering Ti and polycrystalline silicon using a RTP in N2 ambient. The oxidation results of Ti suicide formed using RTP in N2 ambient are compared with those formed using furnace sintering in vacuum/argon ambient and those deposited by cosputtering.

Effect of Heat Treatments on the Structural and Mechanical Properties of Ti Thin Films Deposited on Steel Substrates by PVD Method

2010 ◽  
Vol 297-301 ◽  
pp. 88-92 ◽  
Author(s):  
R. Gheriani ◽  
Rachid Halimi
Keyword(s):  
Thin Films ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Annealing Temperature ◽  
Micro Hardness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Titanium Thin Films ◽  
Steel Substrates ◽  
Technological Interest

Titanium carbides are well known materials with great scientific and technological interest. The applications of these materials take advantage of the fact that they are very hard, refractory and that they have metallic properties. In this work, we have studied the influence of the heat treatment temperatures (400-1000°C) on the interaction between the titanium thin films and steel substrates. Steel substrates, 100C6 type (AFNOR norms) containing approximately 1 wt % of carbon were coated at 200°C with titanium thin films by magnetron sputtering. The samples were characterized by X-ray diffraction (XRD) and Auger electron spectroscopy (AES). Vikers micro-hardness measurements carried out on the annealed samples showed that the micro-hardness increases with annealing temperature, reaches a maximum (3500 kg/mm2), then decreases progressively. The growth of micro-hardness is due to the diffusion of the carbon, and to the formation of titanium carbide. However, the decrease of micro-hardness is associated with the diffusion of iron and the formation of iron oxide (Fe2O3). At higher temperatures, we note the formation of titanium dioxide (TiO2).

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