Substrate and Particle Dependent Deep Level Generation in Silicon by MeV Particle Beams

1992 ◽  
Vol 279 ◽  
Author(s):  
M.-A. Trauwaert ◽  
J. Vanhellemont ◽  
E. Simoen ◽  
C. Claeys ◽  
B. Johlander ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Fission Products ◽  
High Energy ◽  
Radiation Hardening ◽  
Interstitial Oxygen ◽  
Particle Beams ◽  
Fundamental Study ◽  
Transient Spectroscopy

ABSTRACTThe results are presented of a fundamental study of electrically active damage introduced in silicon diodes by irradiation with the fission products resulting from the decay of a 252Cf source and with high energy protons. The influence of the oxygen content of the silicon substrate and the irradiation type on the damage formation is investigated using deep level transient spectroscopy. A radiation hardening effect by interstitial oxygen is observed. Bom types of irradiation create the same dominant defect levels but with different relative densities. The identification of the induced deep levels are confirmed by isochronal annealing results.

Defects Created by 25 keV Hydrogen Implantation in n-type GaN

2001 ◽  
Vol 693 ◽  
Author(s):  
F. D. Auret ◽  
W. E. Meyer ◽  
H. A. van Laarhoven ◽  
S. A. Goodman ◽  
M. J. Legodi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Deep Level Transient Spectroscopy ◽  
Isothermal Annealing ◽  
Deep Level ◽  
High Energy ◽  
Zero Bias ◽  
Hydrogen Implantation ◽  
Proton Implantation ◽  
Transient Spectroscopy ◽  
Annealing Experiments

AbstractWe have studied defects introduced in n-GaN during 25 keV hydrogen and 40 keV He implantation using deep level transient spectroscopy (DLTS). These measurements revealed that 25 keV hydrogen implantation introduces a complex set of electron traps, of which most are different to the defects observed after high-energy (MeV) electron and proton implantation. At least three of the defects detected after 25 keV proton implantation exhibit a metastable character in that they can be reproducibly removed and re-introduced during reverse and zero bias anneal cycles. Isochronal and isothermal annealing experiments yielded low activation energies of approximately 0.1 – 0.2 eV for both processes. By comparison, 40 keV He ion implantation introduced the same metastable defects, but in different relative concentrations.

Defects in High Energy Ion Irradiated 4H-SiC

2009 ◽  
Vol 615-617 ◽  
pp. 397-400 ◽  
Author(s):  
Gaetano Izzo ◽  
Grazia Litrico ◽  
Andrea Severino ◽  
Gaetano Foti ◽  
Francesco La Via ◽  
...  
Keyword(s):  
Leakage Current ◽  
Deep Level Transient Spectroscopy ◽  
Ion Irradiation ◽  
Deep Level ◽  
High Energy ◽  
Conduction Band Edge ◽  
Transmission Electron ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Fluence Range

The defects produced by 7.0 MeV C+ irradiation in 4H-SiC epitaxial layer were followed by Deep Level Transient Spectroscopy, current-voltage measurements and Transmission Electron Microscopy in a large fluence range (109-51013 ions/cm2). At low fluence (109 -1010 ions/cm2), the formation of three main level defects located at 0.68 eV, 0.98 eV and 1.4 eV below the conduction band edge is detected. The trap concentration increases with ion fluence suggesting that these levels are associated to the point defects generated by ion irradiation. In this fluence range the leakage current of the diodes does not change. At higher fluence an evolution of defects occurs, as the concentration of traps at 0.68 eV and 1.4 eV decreases, while the intensity of the level at 0.98 eV remains constant. In this fluence range complex defects are formed and an increase of a factor five in the leakage current is measured.

Atomic Hydrogen Passivation of High Energy Hydrogen Implants

1991 ◽  
Vol 223 ◽  
Author(s):  
K. Srikanth ◽  
J. Shenal ◽  
S. Ashok
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
High Energy ◽  
Low Energy ◽  
Hydrogen Ion ◽  
Hydrogen Passivation ◽  
Ion Proton ◽  
Proton Implantation ◽  
Defects And Impurities ◽  
Transient Spectroscopy

ABSTRACTHigh-energy hydrogen ion (proton) implantation is used in Si for creating defects, while low-energy H is known for passivation of a variety of defects and impurities. We have carried out a study of low-energy (<0.4 keV) H passivation of defects produced by 100 keV H implantation. Both Schottky barrier transport and deep level transient spectroscopy measurements give evidence for self-passivation of defects produced by H.

Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons

2010 ◽  
Vol 645-648 ◽  
pp. 423-426 ◽  
Author(s):  
Sergey A. Reshanov ◽  
Svetlana Beljakowa ◽  
Bernd Zippelius ◽  
Gerhard Pensl ◽  
Katsunori Danno ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Systematic Study ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
High Energy ◽  
Defect Centers ◽  
High Energy Electrons ◽  
Transient Spectroscopy ◽  
P Type ◽  
Thermal Stability Of

This paper comprises a systematic study of the thermal stability of defect centers observed in n- and p-type 4H-SiC by deep level transient spectroscopy (DLTS); the defects are generated by irradiation with high-energy electrons of 170 keV or 1 MeV.

Deep Level Transient Spectroscopy (DLTS) Study of 4H-SiC Schottky Diodes and PiN Diodes

2019 ◽  
Vol 963 ◽  
pp. 516-519 ◽  
Author(s):  
Xiang Zhou ◽  
Gyanesh Pandey ◽  
Reza Ghandi ◽  
Peter A. Losee ◽  
Alexander Bolotnikov ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Diodes ◽  
High Energy ◽  
Pin Diode ◽  
Trap Level ◽  
Pin Diodes ◽  
Low Levels ◽  
Transient Spectroscopy

We have studied capacitance mode Deep Level Transient Spectroscopy (DLTS) of five 4H-SiC Schottky diode and PiN diode designs. Comparing with previous DLTS studies, we have identified four traps levels, Z1/2, EH1, EH3and EH5. Additionally, a new trap level, EH1, is prominent in blanket Al+and B+high-energy implanted samples but less so in mask-implanted samples. Al+implantation increases EH3(associated with silicon vacancy) and EH5, while B+implantation significantly reduces EH3. The Z1/2peak (associated with carbon vacancy) is reduced to very low levels after B+and Al+implantation.

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