FERROELECTRIC PROPERTIES AND INTERFACIAL CHARACTERISTICS OF Ca SUBSTITUTED STRONTIUM BISMUTH TANTALATE THIN FILMS

2005 ◽  
Vol 19 (19) ◽  
pp. 3173-3183
Author(s):  
RASMI R. DAS ◽  
P. BHATTACHARYA ◽  
W. PÉREZ ◽  
RAM S. KATIYAR
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Remanent Polarization ◽  
Lattice Mismatch ◽  
Profile Analysis ◽  
Ferroelectric Properties ◽  
Force Microscopy ◽  
Si Substrates ◽  
Thin Film Capacitors ◽  
Average Grain Size

In this study, we have investigated the structural, interfacial and ferroelectric properties of Sr 1-x Ca x Bi 2 Ta 2 O 9 thin films grown on Pt / TiO 2/ SiO 2/ Si substrates using pulsed-laser-deposition technique. The decrease in lattice parameters with increasing Ca content was attributed to the smaller ionic radius of Ca . Atomic force microscopy shows that the average grain size and surface roughness of the films increases with the incorporation of Ca . Films with x=0.2 exhibited a maximum remanent polarization of ~23.8 μ C/cm 2 with a coercive field of 175 kV/cm. The higher remanent polarization was attributed to the increased grain size and to the increase in the lattice mismatch between TaO 2 and SrO planes. The presence of metallic bismuth at the interface of the film and the substrates was confirmed using XPS depth profile analysis. The current transport property of the thin film capacitors suggests a bulk-limited dc-current conduction mechanism.

Structural and Ferroelectric Properties of SrBi2Ta2O9 Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Kazushi Amanuma ◽  
Takashi Hase ◽  
Yoicht Mtyasaka
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Structural Change ◽  
Electrical Properties ◽  
Ferroelectric Properties ◽  
Si Substrates ◽  
Average Grain Size ◽  
Structural And Electrical Properties ◽  
Sims Analysis ◽  
Film Preparation

ABSTRACTStructural and electrical properties were investigated for chemically prepared SrBi2Ta2O9(SBT) thin films on Pt/Ti/SiO2/Si substrates. Good ferroelectric properties were obtained with a Pt top electrode: Pr=10.0μC/cm2 and Ec-34kV/cm. Au top electrodes resulted in smaller Pr. However, no fatigue was observed up to 109 switching cycles regardless of the top electrode material. Grains were spherical, not columnar, and the average grain size was 200nm. A marked structural change took place in the bottom Pt/Ti electrode during film preparation. The SIMS analysis indicates the reaction between Bi and Pt

THICKNESS-DEPENDENT MICROSTRUCTURES AND ELECTRICAL PROPERTIES OF LiTaO3 THIN FILMS PREPARED BY A Sol-Gel PROCESS

2007 ◽  
Vol 21 (18n19) ◽  
pp. 3404-3411
Author(s):  
M. C. KAO ◽  
H. Z. CHEN ◽  
S. L. YOUNG ◽  
C. C. LIN ◽  
C. C. YU
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Relative Dielectric Constant ◽  
Coating Technology ◽  
Si Substrates ◽  
Sol Gel Process

LiTaO 3 thin films were deposited on Pt / Ti / SiO 2/ Si substrates by means of a sol-gel spin-coating technology and rapid thermal annealing (RTA). The influence of various annealing treatments on the characteristics of the thin films were studied by varying the single-annealed-layer thickness (50 ~ 200 nm ) and heating temperatures (500 ~ 800° C ) of the samples. Experimental results reveal that the single-annealed-layer strongly influences grain size, dielectricity and ferroelectricity of LiTaO 3 thin films. The grain size of LiTaO 3 thin film decreases slightly with increasing thickness of the single-annealed-layer, and highly c-axis orientated LiTaO 3 films can be obtained for a single-annealed-layer of 50 nm. When the thickness of the single-annealed-layer was increased from 50 to 200 nm, the relative dielectric constant of LiTaO 3 thin film decreased from 65 to 35, but the dielectric loss factor (tanδ) was increased. The LiTaO 3 films with the single-annealed-layer of 50 nm showed excellent ferroelectric properties in terms of a remanent polarization ( P r) of 12.3 μ C /cm2 (Ec ∼ 60 kV/cm), and a low current density of 5.2×l0-8 A /cm2 at 20 kV/cm.

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

2011 ◽  
Vol 197-198 ◽  
pp. 1781-1784
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Gel Processing ◽  
Coercive Electric Field ◽  
Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

2014 ◽  
Vol 633 ◽  
pp. 378-381
Author(s):  
Bei Li ◽  
X.B. Liu ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

EFFECT OF GRAIN SIZE ON THE FERROELECTRIC PROPERTIES OF Bi3.25La0.75Ti3O12 Thin Films

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4469-4474 ◽  
Author(s):  
KYOUNG-TAE KIM ◽  
CHANG-IL KIM ◽  
DONG-HEE KANG ◽  
IL-WUN SHIM
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Fatigue Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Densities ◽  
Metalorganic Decomposition ◽  
Small Grains

The Bi 3.25 La 0.75 Ti 3 O 12 (BLT) thin films were prepared by metalorganic decomposition method. The effect of grain size on the ferroelectric properties during crystallization were investigated by x-ray diffraction and field emission scanning electron microscope. The grain size and the roughness of BLT films increase with increasing of drying temperature. The leakage current densities of the BLT thin film with large grains are higher than that with small grains. The remanent polarization of BLT increase with increasing grain size. As compared BLT with small grain size, the BLT film with larger grain size shows better fatigue properties. This may be explained that small grained films shows more degradation of switching charge than large grained films.

Ferroelectric Properties and Microstructures of Tb4O7-Doped Bi4Ti3O12 Thin Films

2010 ◽  
Vol 105-106 ◽  
pp. 259-262 ◽  
Author(s):  
X.A. Mei ◽  
Min Chen ◽  
A.H. Cai ◽  
K.L. Su ◽  
Chong Qing Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Remarkable Improvement

Tb4O7-doped bismuth titanate (BixTbyTi3O12 BTT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the microstructures and ferroelectric properties of the films were investigated. Microstructure studies indicate that all of BTT films with well-developed rod-like grains consist of single phase of a bismuth-layered structure without preferred orientation. The experimental results indicate that Tb doping into Bi4Ti3O12 results in a remarkable improvement in ferroelectric properties. The remanent polarization (Pr) and coercive field (Ec) of the BTT film with y=0.6 were 22 μC/cm2 and 85 kV/cm, respectively.

0.75SrBi2Ta2O9-0.25Bi3TiTaO9 Layered Structural Thin Films: Microstructure and Ferroelectric Properties

2008 ◽  
Vol 368-372 ◽  
pp. 1814-1816
Author(s):  
Dan Xie ◽  
Zhi Gang Zhang ◽  
Tian Ling Ren ◽  
Li Tian Liu
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Grain Size ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Significant Enhancement ◽  
Solution Deposition ◽  
Annealing Temperatures

{0.75SrBi2Ta2O9-0.25Bi3TiTaO9}(SBT-BTT) thin films were prepared by the modified metalorganic solution deposition (MOSD) technique. The microstructure and ferroelectric properties of SBTBTT thin films were studied. The SBT-BTT thin films were produced at 750°C. The grain size and surface roughness of SBT-BTT films showed significant enhancement with an increase in annealing temperatures. It is found that SBT-BTT thin films have good ferroelectric properties. The measured remanent polarization values for SBT-BTT, SBT and BTT capacitors were 15, 7.5 and 4.8μC/cm2, respectively. The coercive field for SBT-BTT capacitors was 50kV/cm. More importantly, the polarization of SBT-BTT capacitors only decreased 5% after 1011 switching cycles at a frequency of 1MHz.

Electrical Characteristics and Microstructures of Eu2O3-Doped Bi4Ti3O12 Thin Films

2010 ◽  
Vol 177 ◽  
pp. 197-200
Author(s):  
X.A. Mei ◽  
Min Chen ◽  
K.L. Su ◽  
A.H. Cai ◽  
J. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Electrical Characteristics ◽  
Si Substrates ◽  
Ferroelectric Hysteresis

Eu2O3-doped bismuth titanate (Bi1-xEuxTi3O12: BET) thin films with random oriention were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BET films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. For samples with x=0.0 , 0.25, 1.0 and 1.25, I-E characteristics exhibited negative differential resistance behaviors and their ferroelectric hysteresis loops were characterized by large leakage current, whereas for samples with x=0.5 and 0.75, I-E characteristics were simple ohmic behaviors and their ferroelectric hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization (Pr) and coercive field (Ec) of the BET Film with x=0.75 were above 30μC/cm2 and 85KV/cm , respectively.

Ferroelectric Properties and Microstructures of Pr6O11-Doped Bi4Ti3O12 Thin Films

2010 ◽  
Vol 434-435 ◽  
pp. 281-284
Author(s):  
Min Chen ◽  
A.H. Cai ◽  
X.A. Mei ◽  
K.L. Su ◽  
Chong Qing Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Single Phase ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Large Leakage Current ◽  
Ferroelectric Hysteresis

Pr6O11-doped bismuth titanate (BixPryTi3O12: BPT) thin films with random oriention were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BPT films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. For samples with y=0.06, 0.3, 1.2 and 1.5, ferroelectric hysteresis loops were characterized by large leakage current, whereas for samples with y=0.6 and 0.9, ferroelectric hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT Film with y=0.9 were above 35μC/cm2 and 80KV/cm , respectively. After 3×1010 switching cycles, 20% degradation of 2Pr is observed in the film with y=0.9.

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