Thermal Stability of Platinum Silicide in Deep Sub-Micron Lines

1995 ◽  
Vol 391 ◽  
Author(s):  
Dan-Xia Xu ◽  
Suhit R. Das ◽  
Lynden Erickson ◽  
Abdalla Naem
Keyword(s):  
Thermal Stability ◽  
Sheet Resistance ◽  
Annealing Temperature ◽  
Electrical Conductance ◽  
Sharp Decrease ◽  
Platinum Silicide ◽  
Deflection System ◽  
Stability Of Resistance ◽  
Pt Films ◽  
Thermal Stability Of

AbstractThe properties of platinum silicide have been evaluated in the form of blanket films and confined lines with linewidth down to 0.15 μm. Pt films, ranging in thickness from 150Å to 1000Å, were prepared by sputter-deposition onto Si (100) blanket substrates or substrates patterned with windows of various sizes in SiO2. The samples were then annealed in a rapid thermal annealing system up to 550°C to form PtSi. The sheet resistance of silicide lines did not change significantly with linewidth. The thermal stability of the sheet resistance of PtSi was also measured for different linewidths and film thicknesses. The sheet resistance remained stable on annealing up to 850°C for a silicide film made of 250Å Pt and did not appear to be sensitive to the linewidth. The thickness dependence of the thermal stability of resistance was also evaluated.The stress of the silicide films was measured using a laser deflection system. The asdeposited metal films were under compressive stress, but the stress turned into tensile upon annealing when silicide started to form. After PtSi was formed, the stress remained stable with annealing temperature until approximately 900°C when the stress exhibited a sharp decrease. Unlike electrical conductance, however, the breakdown temperature for stress did not strongly depend on the film thickness.

Implant isolation of ZnO epitaxial layers

2002 ◽  
Vol 744 ◽  
Author(s):  
S. O. Kucheyev ◽  
C. Jagadish ◽  
J. S. Williams ◽  
P. N. K. Deenapanray ◽  
Mitsuaki Yano ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Single Crystal ◽  
Sheet Resistance ◽  
Annealing Temperature ◽  
Ion Beam ◽  
Irradiation Temperature ◽  
Minor Effect ◽  
Electrical Isolation ◽  
Atomic Displacements ◽  
Thermal Stability Of

ABSTRACTThe formation of highly resistive films of single-crystal ZnO as a result of irradiation with MeV Li, O, and Si ions is demonstrated. Results show that the ion doses necessary for electrical isolation close-to-inversely depend on the number of ion-beam-generated atomic displacements. Results show that an increase in the dose of 2 MeV O ions (up to ∼ 2 orders of magnitude above the threshold isolation dose) and irradiation temperature (up to 350 °C) has a relatively minor effect on the thermal stability of electrical isolation, which is limited to temperatures of ∼ 300 — 400 °C. For the case of multiple-energy implantation with keV Cr, Fe, or Ni ions, the evolution of sheet resistance with annealing temperature is consistent with defect-induced isolation, with a relatively minor effect of Cr, Fe, or Ni impurities on the thermal stability of isolation. Based on these results, the mechanism for electrical isolation in ZnO by ion bombardment is discussed.

Improvement of Thin Palladium and Platinum Silicide Films On (100) Si Substrates By Incorporating Phosphorus Dopant

2000 ◽  
Vol 648 ◽  
Author(s):  
M. H. Juang ◽  
C. I. Ou-Yang ◽  
H. C. Cheng ◽  
C. T. Lin
Keyword(s):  
Thermal Stability ◽  
The Other ◽  
Fluorine Concentration ◽  
Si Substrates ◽  
Platinum Silicide ◽  
Dopant Incorporation ◽  
Si Films ◽  
Pt Films ◽  
Thermal Stability Of ◽  
Control Samples

AbstractEffects of phosphorus dopant on thin Pd and Pt silicide films on (100) Si substrates have been studied. As for the samples formed by implanting BF2 dopant into thin Pd films deposited on Si substrates and then annealing, the thermal stability of thin Pd2Si films can be improved relative to the control samples without dopant incorporation. The degree of improvement is affected by the fluorine concentration around the silicide/Si interface and thus the BF2 implant energy. On the other hand, as for the samples formed by implanting phosphorus dopant into thin Pd films and then annealing, both the thermal stability and the silicide conductivity of thin Pd2Si films can be significantly enhanced. The large improvements in the thermal stability and the silicide conductivity are nearly independent of the phosphorus implant energy, and which are primarily due to the formation of textured Pd2Si structures. In addition, the Pt silicides formed by implanting phosphorus dopant into thin Pt films and then annealing also show considerably improved thermal stability.

Thermal Stability of Ultrafine-Grained Pure Titanium Processed by High-Pressure Torsion

2021 ◽  
Vol 1016 ◽  
pp. 338-344
Author(s):  
Wan Ji Chen ◽  
Jie Xu ◽  
De Tong Liu ◽  
De Bin Shan ◽  
Bin Guo ◽  
...  
Keyword(s):  
Activation Energy ◽  
Thermal Stability ◽  
Grain Size ◽  
High Pressure ◽  
Annealing Temperature ◽  
High Pressure Torsion ◽  
Stored Energy ◽  
Ultrafine Grained ◽  
Average Grain Size ◽  
Thermal Stability Of

High-pressure torsion (HPT) was conducted under 6.0 GPa on commercial purity titanium up to 10 turns. An ultrafine-grained (UFG) pure Ti with an average grain size of ~96 nm was obtained. The thermal properties of these samples were studied by using differential scanning calorimeter (DSC) which allowed the quantitative determination of the evolution of stored energy, the recrystallization temperatures, the activation energy involved in the recrystallization of the material and the evolution of the recrystallized fraction with temperature. The results show that the stored energy increases, beyond which the stored energy seems to level off to a saturated value with increase of HPT up to 5 turns. An average activation energy of about 101 kJ/mol for the recrystallization of 5 turns samples was determined. Also, the thermal stability of the grains of the 5 turns samples with subsequent heat treatments were investigated by microstructural analysis and Vickers microhardness measurements. It is shown that the average grain size remains below 246 nm when the annealing temperature is below 500 °C, and the size of the grains increases significantly for samples at the annealing temperature of 600 °C.

Effect of annealing temperature on the thermal stability of FeCrNiMnMoxSi0.5B0.5 coatings

2019 ◽  
Vol 35 (11) ◽  
pp. 962-969 ◽  
Author(s):  
Ying Zhu ◽  
Xiong Ya Guo ◽  
Cheng Wen Liu ◽  
Fang Zhou ◽  
Bin Qi Liu
Keyword(s):  
Thermal Stability ◽  
Annealing Temperature ◽  
Thermal Stability Of

Dependence of Vickers Hardness on Annealing Temperature at Co/Cu Multilayered Films

2007 ◽  
Vol 561-565 ◽  
pp. 2399-2402
Author(s):  
Yoshihisa Kaneko ◽  
H. Sakakibara ◽  
Satoshi Hashimoto
Keyword(s):  
Thermal Stability ◽  
Vickers Hardness ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Copper Substrate ◽  
The Other ◽  
Multilayered Structures ◽  
Multilayered Films ◽  
Hardness Tests ◽  
Thermal Stability Of

Co/Cu and Ni/Cu multilayers fabricated by electroplating technique were annealed at various temperatures in order to investigate thermal stability of multilayered structures. Vickers hardness tests on the annealed Co/Cu and Ni/Cu multilayers were conducted at room temperature. It was recognized that after the annealing at 1023K the Co/Cu multilayer still maintained the hardness of as-deposited state. On the other hand, the hardness of Ni/Cu multilayer was almost identical to copper substrate after the annealing at 903K.

A Correlation Study of Thermal Stability on Porous Low k

2002 ◽  
Vol 716 ◽  
Author(s):  
Y.F. Chow ◽  
T.H. Foo ◽  
L. Shen ◽  
J.S. Pan ◽  
A.Y. Du ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Annealing Temperature ◽  
Correlation Study ◽  
Film Properties ◽  
Unannealed Sample ◽  
Nano Indentation ◽  
Low K ◽  
Thermal Stability Of

AbstractThe thermal stability of organic porous low k, porous SiLK with a dielectric constant of 2.4, has been studied. Organic low k material SiLKTM, non-porous SiLK, with a dielectric constant 2.8 is used as a baseline for comparison. Each sample was subjected to annealing cycles, where each cycle was conducted in a vertical furnace for one hour in an N2 ambient. The annealing temperature was set at either 430°C or 450°C. After every alternate cycle, the film properties were measured and compared to the unannealed sample for changes in film shrinkage, refractive index, dielectric constant, roughness, breakdown voltage, pore size, hardness and Young's modulus. Changes in film properties were investigated and evaluated by using opti-probe, FTIR, XPS, AFM, mercury probe, nano-indentation, SEM and TEM techniques.

Stability Improvement of Nickel Silicide with Co Interlayer on Si, Polysilicon and SiGe

2001 ◽  
Vol 670 ◽  
Author(s):  
Jer-shen Maa ◽  
Douglas J. Tweet ◽  
Yoshi Ono ◽  
Lisa Stecker ◽  
Sheng Teng Hsu
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Sheet Resistance ◽  
Nickel Silicide ◽  
Formation Temperature ◽  
Facet Structure ◽  
High Temperature Anneal ◽  
Lower Temperature ◽  
Co Addition ◽  
Thermal Stability Of

ABSTRACTThermal stability of nickel silicide is improved by adding a thin Co interlayer at Ni/Si interface. After high temperature anneal, the low sheet resistance of silicide and the low junction leakage of the ultra-shallow junction show the lack of film degradation. The transformation to disilicide phase occurred at a lower temperature. At 850°C, interface shows the truncated facet structure extended 100° to 200° below silicide/Si interface. With Co addition, nickel silicide formed on polysilicon and on SiGe films also show improved thermal stability and low sheet resistance. Formation temperature of disilicide phase occurred at lower temperature in all these cases.

Thermal Stability of Cu Films on Tin/Ti/Si(100) by Partially Ionized Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
H. G. Jang ◽  
K. H. Kim ◽  
D. J. Choi ◽  
S. Han ◽  
S. C. Choi ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Depth Profiling ◽  
Film Surface ◽  
Cu Films ◽  
Profiling Techniques ◽  
Partially Ionized ◽  
Thermal Stability Of ◽  
Beam Deposition

AbstractCu thin films with a thickness around 850 Å were prepared on Ti45N55/Ti/Si(100) substrates at room temperature by partially ionized beam deposition (PIBD) with an ion energy of 3 keV at pressure of 8×10−7-1 x 10−6 Torr. The Cu/Ti45N55/Ti/Si samples were annealed at 8×10−6-1 × 10−5 Torr with annealing temperature of 500 to 700 °C for 30 min.. Thermal stability of the PIB-Cu films was investigated with Rutherford backscattering spectrometry (RBS), Auger electron spectroscopy (AES), Scanning electron microscopy (SEM), and X-ray diffraction (XRD). The as deposited Cu films had a (111) texture and there was no change of phase in annealed Cu films regardless of annealing temperature. Grain size of the annealed Cu films increased with annealing temperature. SEM studies show no hillock and no voiding on the Cu film surface up to annealing temperature of 700 °C. For PIB-Cu/Ti45N55/Ti/Si samples, all the layers were intact and there was no indication of interdiffusion by conventional depth profiling techniques (RBS, AES) up to 700 °C in vacuum for 30 minutes.

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