A Correlation Study of Thermal Stability on Porous Low k

2002 ◽  
Vol 716 ◽  
Author(s):  
Y.F. Chow ◽  
T.H. Foo ◽  
L. Shen ◽  
J.S. Pan ◽  
A.Y. Du ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Annealing Temperature ◽  
Correlation Study ◽  
Film Properties ◽  
Unannealed Sample ◽  
Nano Indentation ◽  
Low K ◽  
Thermal Stability Of

AbstractThe thermal stability of organic porous low k, porous SiLK with a dielectric constant of 2.4, has been studied. Organic low k material SiLKTM, non-porous SiLK, with a dielectric constant 2.8 is used as a baseline for comparison. Each sample was subjected to annealing cycles, where each cycle was conducted in a vertical furnace for one hour in an N2 ambient. The annealing temperature was set at either 430°C or 450°C. After every alternate cycle, the film properties were measured and compared to the unannealed sample for changes in film shrinkage, refractive index, dielectric constant, roughness, breakdown voltage, pore size, hardness and Young's modulus. Changes in film properties were investigated and evaluated by using opti-probe, FTIR, XPS, AFM, mercury probe, nano-indentation, SEM and TEM techniques.

Diamondlike Carbon Materials as Low-k Dielectrics for Multilevel Interconnects in Ulsi

1996 ◽  
Vol 443 ◽  
Author(s):  
A. Grill ◽  
V. Patel ◽  
K.L. Saenger ◽  
C. Jahnes ◽  
S.A. Cohen ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Dielectric Constants ◽  
Internal Stresses ◽  
Diamondlike Carbon ◽  
Potential Applications ◽  
Etch Stop ◽  
Si Content ◽  
Low K ◽  
Thermal Stability Of

AbstractA variety of diamondlike carbon (DLC) materials were investigated for their potential applications as low-k dielectrics for the back end of the line (BEOL) interconnect structures in ULSI circuits. Hydrogenated DLC and fluorine containing DLC (FDLC) were studied as a low-k interlevel and intralevel dielectrics (ILD), while silicon containing DLC (SiDLC) was studied as a potential low-k etch stop material between adjacent DLC based ILD layers, which can be patterned by oxygen-based plasma etchingIt was found that the dielectric constant (k) of the DLC films can be varied between >3.3 and 2.7 by changing the deposition conditions. The thermal stability of these DLC films was found to be correlated to the values of the dielectric constant, decreasing with decreasing k. While DLC films having dielectric constants k>3.3 appeared to be stable to anneals of 4 hours at 400 °C in He, a film having a dielectric constant of 2.7 was not, losing more than half of its thickness upon exposure to the same anneal. The stresses in the DLC films were found to decrease with decreasing dielectric constant, from 700 MPa to about 250 MPa. FDLC films characterized by a dielectric constant of about 2.8 were found to have similar thermal stability as DLC films with k >3.3. The thermally stable FDLC films have internal stresses <300 MPa and are thus promising candidates as a low-k ILD.For the range of Si contents examined (0-9% C replacement by Si), SiDLC films with a Si content of around 5% appear to provide an effective etch-stop for oxygen RIE of DLC or FDLC films, while retaining desirable electrical characteristics. These films showed a steady state DLC/SiDLC etch rate ratio of about 17, and a dielectric constant only about 30% higher than the 3.3 of DLC.

Curing Process Window and Thermal Stability of Porous MSQ-Based Low-Dielectric-Constant Materials

2004 ◽  
Vol 151 (6) ◽  
pp. F146 ◽  
Author(s):  
Shou-Yi Chang ◽  
Tzu-Jen Chou ◽  
Yung-Cheng Lu ◽  
Syun-Ming Jang ◽  
Su-Jien Lin ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Process Window ◽  
Curing Process ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials ◽  
Thermal Stability Of

scholarly journals Annealing Effect on Some Optical Properties of Cr2O3 Thin Films Prepared by Spray Pyrolysis Technique

2011 ◽  
Vol 8 (2) ◽  
pp. 561-565
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Optical Properties ◽  
Absorption Coefficient ◽  
Spray Pyrolysis ◽  
Annealing Temperature ◽  
Spray Pyrolysis Technique ◽  
Annealing Effect ◽  
Before And After

Cr2O3 thin films have been prepared by spray pyrolysis on a glass substrate. Absorbance and transmittance spectra were recorded in the wavelength range (300-900) nm before and after annealing. The effects of annealing temperature on absorption coefficient, refractive index, extinction coefficient, real and imaginary parts of dielectric constant and optical conductivity were expected. It was found that all these parameters increase as the annealing temperature increased to 550°C.

Thermal Stability of Ultrafine-Grained Pure Titanium Processed by High-Pressure Torsion

2021 ◽  
Vol 1016 ◽  
pp. 338-344
Author(s):  
Wan Ji Chen ◽  
Jie Xu ◽  
De Tong Liu ◽  
De Bin Shan ◽  
Bin Guo ◽  
...  
Keyword(s):  
Activation Energy ◽  
Thermal Stability ◽  
Grain Size ◽  
High Pressure ◽  
Annealing Temperature ◽  
High Pressure Torsion ◽  
Stored Energy ◽  
Ultrafine Grained ◽  
Average Grain Size ◽  
Thermal Stability Of

High-pressure torsion (HPT) was conducted under 6.0 GPa on commercial purity titanium up to 10 turns. An ultrafine-grained (UFG) pure Ti with an average grain size of ~96 nm was obtained. The thermal properties of these samples were studied by using differential scanning calorimeter (DSC) which allowed the quantitative determination of the evolution of stored energy, the recrystallization temperatures, the activation energy involved in the recrystallization of the material and the evolution of the recrystallized fraction with temperature. The results show that the stored energy increases, beyond which the stored energy seems to level off to a saturated value with increase of HPT up to 5 turns. An average activation energy of about 101 kJ/mol for the recrystallization of 5 turns samples was determined. Also, the thermal stability of the grains of the 5 turns samples with subsequent heat treatments were investigated by microstructural analysis and Vickers microhardness measurements. It is shown that the average grain size remains below 246 nm when the annealing temperature is below 500 °C, and the size of the grains increases significantly for samples at the annealing temperature of 600 °C.

Effect of annealing temperature on the thermal stability of FeCrNiMnMoxSi0.5B0.5 coatings

2019 ◽  
Vol 35 (11) ◽  
pp. 962-969 ◽  
Author(s):  
Ying Zhu ◽  
Xiong Ya Guo ◽  
Cheng Wen Liu ◽  
Fang Zhou ◽  
Bin Qi Liu
Keyword(s):  
Thermal Stability ◽  
Annealing Temperature ◽  
Thermal Stability Of

Dependence of Vickers Hardness on Annealing Temperature at Co/Cu Multilayered Films

2007 ◽  
Vol 561-565 ◽  
pp. 2399-2402
Author(s):  
Yoshihisa Kaneko ◽  
H. Sakakibara ◽  
Satoshi Hashimoto
Keyword(s):  
Thermal Stability ◽  
Vickers Hardness ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Copper Substrate ◽  
The Other ◽  
Multilayered Structures ◽  
Multilayered Films ◽  
Hardness Tests ◽  
Thermal Stability Of

Co/Cu and Ni/Cu multilayers fabricated by electroplating technique were annealed at various temperatures in order to investigate thermal stability of multilayered structures. Vickers hardness tests on the annealed Co/Cu and Ni/Cu multilayers were conducted at room temperature. It was recognized that after the annealing at 1023K the Co/Cu multilayer still maintained the hardness of as-deposited state. On the other hand, the hardness of Ni/Cu multilayer was almost identical to copper substrate after the annealing at 903K.

Implant isolation of ZnO epitaxial layers

2002 ◽  
Vol 744 ◽  
Author(s):  
S. O. Kucheyev ◽  
C. Jagadish ◽  
J. S. Williams ◽  
P. N. K. Deenapanray ◽  
Mitsuaki Yano ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Single Crystal ◽  
Sheet Resistance ◽  
Annealing Temperature ◽  
Ion Beam ◽  
Irradiation Temperature ◽  
Minor Effect ◽  
Electrical Isolation ◽  
Atomic Displacements ◽  
Thermal Stability Of

ABSTRACTThe formation of highly resistive films of single-crystal ZnO as a result of irradiation with MeV Li, O, and Si ions is demonstrated. Results show that the ion doses necessary for electrical isolation close-to-inversely depend on the number of ion-beam-generated atomic displacements. Results show that an increase in the dose of 2 MeV O ions (up to ∼ 2 orders of magnitude above the threshold isolation dose) and irradiation temperature (up to 350 °C) has a relatively minor effect on the thermal stability of electrical isolation, which is limited to temperatures of ∼ 300 — 400 °C. For the case of multiple-energy implantation with keV Cr, Fe, or Ni ions, the evolution of sheet resistance with annealing temperature is consistent with defect-induced isolation, with a relatively minor effect of Cr, Fe, or Ni impurities on the thermal stability of isolation. Based on these results, the mechanism for electrical isolation in ZnO by ion bombardment is discussed.

Thermal stability and structural evolution of low-K Fluorinated amorphous carbon during thermal annealing

1998 ◽  
Vol 511 ◽  
Author(s):  
Hongning Yang ◽  
Douglas J. Tweet ◽  
Yanjun Ma ◽  
Tue Nguyen ◽  
David R. Evans ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Thermal Annealing ◽  
Structural Evolution ◽  
Fluorine Concentration ◽  
Interlayer Dielectric ◽  
Profound Impact ◽  
Initial Stage ◽  
Stress Changes ◽  
Low K

ABSTRACTHighly crosslinked a-F:C films can undergo a significant change after thermal annealing, where the film expands by ∼3%, the density reduces by ∼10% and the internal stress changes from compressive to tensile. The loss of fluorine concentration and the reduction of CF. are accompanied by the transition of (C-C, sp3) to (C=C, sp2) groups. After annealing, the dielectric constant is reduced and the leakage current increases slightly. Most importantly, these changes occur only at the initial stage of annealing. After the initial annealing, the a-F:C film tends to be thermally stable and retains reasonably good electrical properties as a low-k interlayer dielectric. The profound impact of these results on Cu/a-F:C integration will be briefly discussed.

Thermal Stability of Platinum Silicide in Deep Sub-Micron Lines

1995 ◽  
Vol 391 ◽  
Author(s):  
Dan-Xia Xu ◽  
Suhit R. Das ◽  
Lynden Erickson ◽  
Abdalla Naem
Keyword(s):  
Thermal Stability ◽  
Sheet Resistance ◽  
Annealing Temperature ◽  
Electrical Conductance ◽  
Sharp Decrease ◽  
Platinum Silicide ◽  
Deflection System ◽  
Stability Of Resistance ◽  
Pt Films ◽  
Thermal Stability Of

AbstractThe properties of platinum silicide have been evaluated in the form of blanket films and confined lines with linewidth down to 0.15 μm. Pt films, ranging in thickness from 150Å to 1000Å, were prepared by sputter-deposition onto Si (100) blanket substrates or substrates patterned with windows of various sizes in SiO2. The samples were then annealed in a rapid thermal annealing system up to 550°C to form PtSi. The sheet resistance of silicide lines did not change significantly with linewidth. The thermal stability of the sheet resistance of PtSi was also measured for different linewidths and film thicknesses. The sheet resistance remained stable on annealing up to 850°C for a silicide film made of 250Å Pt and did not appear to be sensitive to the linewidth. The thickness dependence of the thermal stability of resistance was also evaluated.The stress of the silicide films was measured using a laser deflection system. The asdeposited metal films were under compressive stress, but the stress turned into tensile upon annealing when silicide started to form. After PtSi was formed, the stress remained stable with annealing temperature until approximately 900°C when the stress exhibited a sharp decrease. Unlike electrical conductance, however, the breakdown temperature for stress did not strongly depend on the film thickness.

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