Non Alloyed Ohmic Contacts for GaAs Coplanar Mixer Diodes

1981 ◽  
Vol 4 ◽  
Author(s):  
John M. Woodcock
Keyword(s):  
Ohmic Contacts ◽  
Laser Annealing ◽  
Matched Pairs ◽  
Conversion Loss ◽  
Fin Line ◽  
Current Voltage ◽  
Specific Contact ◽  
Heavily Doped ◽  
Current Voltage Characteristics ◽  
Balanced Mixer

ABSTRACTA Q-switched ruby laser has been used to anneal gallium arsenide which has either been implanted with a donor or coated with a thin layer of material containing the donor. Silicon nitride (∼500Å), germanium (∼50Å), tin (∼50Å) and silicon (∼500Å) have been used and in all cases laser annealing produces n-type doping levels in excess of 1019cm−3. Non alloyed ohmic contacts have been made on these heavily doped layers with specific contact resistances as low as 1.4 × 10−6Ω cm2. These contacts have been used in the fabrication of fine geometry coplanar mixer diodes. Ideality factors of 1.1 have been measured from the d.c. current voltage characteristics and diodes with a total capacitance of O.03pF have series resistances below 10 ohms. Matched pairs of these devices have given a 4.8dB conversion loss at 35GHz in a fin line balanced mixer.

Materials Aspects of Diamond-Based Electronic Devices

1994 ◽  
Vol 339 ◽  
Author(s):  
J. R. Zeidler ◽  
C. A. Hewett ◽  
R. Nguyen
Keyword(s):  
Ohmic Contacts ◽  
Natural Diamond ◽  
Electronic Devices ◽  
Physical Review ◽  
Synthetic Diamonds ◽  
Current Voltage ◽  
Hall Effect Measurements ◽  
Current Voltage Characteristics ◽  
Van Der Pauw ◽  
Electronic Doping

ABSTRACTAn overview of enabling materials technologies required for fabrication of electronic devices on diamond is presented. Emphasis is placed on electronic doping of diamond by boron ion implantation. Van der Pauw resistivity and Hall Effect measurements were used to determine the net carrier concentration, carrier mobility and resistivity of natural and synthetic diamonds implanted under various conditions. The measured results for a range of implantation conditions and post-annealing temperatures are discussed in the context cf a model developed by J.F. Prins1. The requirements placed on ohmic contacts to diamond, and a process for fabricating ohmic contacts, is discussed briefly. Finally, current-voltage characteristics of a simple MISFET fabricated on ion implanted natural diamond are presented and analyzed. 1J.F. Prins, Physical Review B, 38 (1988) 5576.

High Quality Non-Alloyed Pt Ohmic Contacts to P-Type GaN Using Two-Step Surface Treatment

1999 ◽  
Vol 595 ◽  
Author(s):  
Ja-Soon Jang ◽  
Seong-Ju Park ◽  
Tae-Yeon Seong
Keyword(s):  
Surface Treatment ◽  
Ohmic Contacts ◽  
Specific Contact Resistance ◽  
Transport Mechanisms ◽  
High Quality ◽  
Ammonium Sulfide ◽  
Current Voltage ◽  
Specific Contact ◽  
Thermionic Field Emission ◽  
P Type

AbstractTwo-step surface-treatment is introduced to obtain low resistance Pt contacts to ptype GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH4)2Sx]. This is followed by the second step using BOE. The Pt contact, which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH4)2Sx (10 min), produces a specific contact resistance of 3.0 (±3.8)×10-5 Ωcm2. However, the contact, that was simply BOE-treated, yields 3.1 (±1.1)×10-2 Ωcm2. This indicates that the two-step surface treatment is promising technique for obtaining high quality ohmic contacts to p-GaN. Investigation of the electronic transport mechanisms using current-voltage-temperature (I-V-T) data indicates that thermionic field emission is dominant in the surface-treated Pt contacts.

Current‐Voltage Characteristics of Heavily Doped p‐Si in Aqueous  KOH

1989 ◽  
Vol 136 (5) ◽  
pp. 1420-1425 ◽  
Author(s):  
E. D. Palik ◽  
O. J. Glembocki ◽  
J. D. Rinko ◽  
I. Heard
Keyword(s):  
Current Voltage ◽  
Heavily Doped ◽  
Current Voltage Characteristics

Study of Ohmic Contacts on P-Type ZnSe and ZnSe Epitaxial Layers Grown by Molecular Beam Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
C. Piskoti ◽  
B. Mykolajenko ◽  
M. Vaziri
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Metal Contact ◽  
Epitaxial Layers ◽  
Preliminary Results ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

ABSTRACTTo study the formation of ohmic contacts, several metals have been deposited on p-types ZnTe and ZnSe epitaxial layers. The metals were deposited on the layers either by simple evaporation or by electroplating. The current-voltage characteristics associated with each metal contact were measured. The preliminary results of these measurements indicate that electroplating is a better technique for making ohmic contact to these layers.

Current–Voltage Characteristics of Porous Silicon Made from A P/N Junction Structure

1991 ◽  
Vol 256 ◽  
Author(s):  
Y. J. Hsu ◽  
L. K. Samanta ◽  
K. C. Wang ◽  
P. C. Chen ◽  
H. L. Hwang
Keyword(s):  
Carrier Transport ◽  
Ohmic Contacts ◽  
Electrochemical Etching ◽  
Porous Si ◽  
Direction Parallel ◽  
Sudden Rise ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Junction Structure ◽  
Electrical Data

ABSTRACTWe have made studies on the TRANSVERSE transport properties of the porous Si made from a novel P/N junction structure. The structures of porous Si were examined for various electrochemical etching conditions and they were correlated with the electrical data. The junciton was fabricated by shallow diffusion, with porous Si formed perpendicular to the junction and between two indium ohmic contacts. This structure confines currents to the direction parallel to the surface. Distinct feature on I–V curves have been observed, including sudden rise of currents and the existence of negative differential resistances (NDR). The characteristics appeared stable and depended on the polarity of bias. Suggestions are made that the porous Si could be composed of microcrystals, and feasibility of carrier transport through quantum boxes responsible for the electrical behaviors are discussed.

Formation of ultra-shallow Ohmic contacts on n-Ge by Sb delta-doping

2011 ◽  
Vol 1305 ◽  
Author(s):  
K. Sawano ◽  
Y. Hoshi ◽  
K. Kasahara ◽  
K. Yamane ◽  
K. Hamaya ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Ohmic Contacts ◽  
Doping Profile ◽  
Nanometer Scale ◽  
Shallow Junction ◽  
Low Resistivity ◽  
Current Voltage ◽  
Delta Doping ◽  
Current Voltage Characteristics

ABSTRACTWe demonstrate low-resistivity Ohmic contacts for n-Ge with ultra-shallow junction. Using the impurity δ-doping techniques with Ge homoepitaxy on Ge(111) below 400 ºC, we can achieve a very abrupt doping profile within a nanometer-scale width. By introducing the δ-doping to atomically controlled metal/Ge contacts, the current-voltage characteristics clearly show Ohmic conductions owing to the effective tunneling through the Schottky barrier. This approach is promising for a formation technology of ultra-shallow source/drain contacts for scaled Ge devices.

scholarly journals Dielectric properties of oligonucleotides on the surface of Si nanosandwich structures

2018 ◽  
Vol 52 (5) ◽  
pp. 512
Author(s):  
Maxim A. Fomin ◽  
Andrey L. Chernev ◽  
Nicolay T. Bagraev ◽  
Leonid E. Klyachkin ◽  
Anton K. Emelyanov ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Tunneling Current ◽  
Scanning Tunneling ◽  
Silicon Nanostructures ◽  
Tunneling Microscopy ◽  
Dna Oligonucleotides ◽  
Current Voltage ◽  
Heavily Doped ◽  
Capacitance Characteristics ◽  
Current Voltage Characteristics

AbstractPlanar silicon nanostructures that are formed as a very narrow silicon quantum well confined by delta-barriers heavily doped with boron are used to study the dielectric properties of DNA oligonucleotides deposited onto the surface of the nanostructures. The capacitance characteristics of the silicon nanostructures with oligonucleotides deposited onto their surface are determined by recording the local tunneling current- voltage characteristics by means of scanning tunneling microscopy. The results show the possibility of identifying the local dielectric properties of DNA oligonucleotide segments consisting of repeating G–C pairs. These properties apparently give grounds to correlate the segments with polymer molecules exhibiting the properties of multiferroics.

Correlation Between the Interfacial Nonuniformity and the Specific Contact Resistance of Ohmic Contacts to Gaas

1990 ◽  
Vol 181 ◽  
Author(s):  
T. Q. Tuy ◽  
I. Mojzes ◽  
V. V. Tuyen ◽  
I. Cseh
Keyword(s):  
Theoretical Model ◽  
Contact Resistance ◽  
Ohmic Contacts ◽  
Contact Region ◽  
Specific Contact Resistance ◽  
Simultaneous Presence ◽  
Modified Model ◽  
Specific Contact ◽  
Heavily Doped ◽  
Bulk Semiconductor

ABSTRACTConsidering the effect of the simultaneous presence and interaction of the different phases at the contact, a modification of the model presented by Wu and coworkers (Solid-St. Electron. 29 (1986) 489] for explanation of ohmic contact resistance of n-GaAs was developed. The modified model combines the existence of the mixed phase structure of AuGeNi/n-GaAs contact with assumptions proposed by Wu et al. that the specific contact resistance Rc contains two parts Rcl and Rc2, where Rc1 is the specific contact resistance of the alloyed and underlaying doped contact region, and Rc2, is that of the high-low junction between the heavily doped contact region and the bulk semiconductor. The Rc1 depends strongly on the apparent barrier height and the effective impurity concentration formed by doping from the contact alloys during annealing. In the present paper a new theoretical model for Rc1 is proposed and compared with the experimental results.

scholarly journals Interfacial Reactions and Electrical Properties of Ti/n-GaN Contacts

1997 ◽  
Vol 2 ◽  
Author(s):  
Holger Cordes ◽  
Y. A. Chang
Keyword(s):  
Electrical Properties ◽  
Diffusion Path ◽  
Interfacial Reactions ◽  
Specific Contact Resistance ◽  
X Ray Diffraction ◽  
Transmission Line Method ◽  
Current Voltage ◽  
Specific Contact ◽  
Current Voltage Characteristics ◽  
Ar Gas

The phase equilibria in the ternary Ti-Ga-N have been investigated. Interfacial reactions in Ti/GaN contacts have been studied by diffusion couple experiments. The ternary phase Ti2GaN was confirmed by x-ray diffraction in bulk samples as well as in massive Ti/GaN diffusion couples and annealed Ti thin films on GaN. The diffusion path in samples, annealed at 850°C in Ar gas, is GaN/TiN/Ti2GaN/Ti3Ga/Ti. A planar TiN layer forms in direct contact to GaN and governs the electrical properties of annealed Ti/GaN contacts. Thin film contacts were fabricated by sputtering Ti on MOVPE grown n-GaN (5×1017cm−3) and subsequent rapid thermal annealing in an Argon atmosphere. Initially non-linear current-voltage characteristics become ohmic after annealing and a specific contact resistance of approximately 10−2 Ωcm2, measured with the circular transmission line method, was found after annealing at 9000C for 1 min.

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