Combined Room Temperature Photoluminescence And High Resolution X-Ray Diffraction Mapping Of Semiconductor Wafers

1995 ◽  
Vol 406 ◽  
Author(s):  
S Cockerton ◽  
M L Cooke ◽  
D K Bowen ◽  
B K Tanner
Keyword(s):  
High Resolution ◽  
Room Temperature ◽  
Poisson Ratio ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Composition Variation ◽  
Line Context ◽  
And Performance

AbstractWe describe the characteristics and performance of a combined desk-side high resolution X-ray diffractometer and room temperature photoluminescence spectrometer designed for rapid mapping of compound semiconductors in a production line context. The combined data for AIGaAs on GaAs suggest that recent measurements of the lattice constant and the Poisson ratio of AlAs may be more reliable than earlier published values. We illustrate the instrument performance in showing that for lattice matched ternary GaInP on GaAs systems, the X-ray rocking curve maps are much more sensitive to composition variation than the photoluminescence spectra.

ROOM TEMPERATURE PHOTOLUMINESCENCE OF POLYCRYSTALLINE SIC PREPARED FROM CARBON-SATURATED SI MELT

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1047-1051
Author(s):  
JIANPING MA ◽  
ZHIMING CHEN ◽  
GANG LU ◽  
MINGBIN YU ◽  
LIANMAO HANG ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Uv Light ◽  
X Ray Diffraction ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Composition And Structure ◽  
Light Excitation ◽  
Scanning Electron

Intense photoluminescence (PL) has been observed at room temperature from the polycrystalline SiC samples prepared from carbon-saturated Si melt at a temperature ranging from 1500 to 1650°C. Composition and structure of the samples have been confirmed by means of X-ray photoelectron spectroscopy, X-ray diffraction and scanning electron microscopy. PL measurements with 325 nm UV light excitation revealed that the room temperature PL spectrum of the samples consists of 3 luminescent bands, the peak energies of which are 2.38 eV, 2.77 eV and 3.06 eV, respectively. The 2.38 eV band is much stronger than the others. It is suggested that some extrinsic PL mechanisms associated with defect or interface states would be responsible to the intensive PL observed at room temperature.

Growth mechanism and characterization of ZnO nano-tubes synthesized using the hydrothermal-etching method

2009 ◽  
Vol 63 (6) ◽  
Author(s):  
Yan Li ◽  
Chuan-Sheng Liu ◽  
Yun-Ling Zou
Keyword(s):  
Room Temperature ◽  
Morphological Analysis ◽  
Diffraction Field ◽  
X Ray Diffraction ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Etching Method ◽  
Nano Rods ◽  
Two Stages

AbstractZnO nano-tubes (ZNTs) have been successfully synthesized via a simple hydrothermal-etching method, and characterized by X-ray diffraction, field emission scanning electron microscopy and room temperature photoluminescence measurement. The as-synthesized ZNTs have a diameter of 500 nm, wall thickness of 20–30 nm, and length of 5 µm. Intensity of the plane (0002) diffraction peak, compared with that of plane (10$$ \bar 1 $$0) of ZNTs, is obviously lower than that of ZnO nano-rods. This phenomenon can be caused by the smaller cross section of plane (0002) of the nano-tubes compared with that of other morphologies. On basis of the morphological analysis, the formation process of nano-tubes can be proposed in two stages: hydrothermal growth and reaction etching process.

A quantitative analysis of room temperature recrystallization kinetics in electroplated copper films using high resolution x-ray diffraction

2011 ◽  
Vol 109 (1) ◽  
pp. 014907 ◽  
Author(s):  
Andrew Ying ◽  
Christian Witt ◽  
Jean Jordan-Sweet ◽  
Robert Rosenberg ◽  
I. C. Noyan
Keyword(s):  
Quantitative Analysis ◽  
High Resolution ◽  
Room Temperature ◽  
Copper Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Recrystallization Kinetics ◽  
Electroplated Copper

scholarly journals Experimental Investigations of the Interaction of SO2 with MgO

1999 ◽  
Vol 590 ◽  
Author(s):  
Andrea Freitag ◽  
J. A. Rodriguez ◽  
J. Z. Larese
Keyword(s):  
High Resolution ◽  
Film Thickness ◽  
Room Temperature ◽  
Temperature Programmed Desorption ◽  
Experimental Investigations ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Temperature Programmed ◽  
X Ray Absorption

ABSTRACTHigh resolution adsorption isotherms, temperature programmed desorption (TPD), x-ray diffraction (XRD) and x-ray absorption near edge spectroscopy (XANES) methods were used to investigate the interaction of SO2 with high quality MgO powders. The results of these investigations indicate that when SO2 is deposited on MgO in monolayer quantities at temperatures near 100K both SO3 and SO4 species form that are not removed by simply pumping on the pre-dosed samples at room temperature. TPD and XANES studies indicate that heating of pre-dosed MgO samples to temperatures above 350 °C is required for full removal of the SO3/SO4 species. XANES measurements made as a function of film thickness indicate for coverages near monolayer completion that the SO4 species form first.

Phosphorus Passivation of GaAs

1998 ◽  
Vol 510 ◽  
Author(s):  
S.P. Watkins ◽  
X. Xu ◽  
J. Hu ◽  
R. Ares ◽  
P. Yeo ◽  
...  
Keyword(s):  
Room Temperature ◽  
Thin Layers ◽  
Difference Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Reflectance Difference Spectroscopy ◽  
Similar Chemical ◽  
Pl Intensity ◽  
Undoped Gaas

AbstractWe have performed a systematic study of the effect of various phosphorus passivation techniques on the room temperature photoluminescence (PL) intensity of undoped GaAs. The effects of passivation by two methods are compared: (1) the P-exchange reaction on exposure to tertiarybutylphosphine (TBP) vapour between 500-620°C, and (2) the growth of thin layers of GaP directly on GaAs. An x-ray diffraction technique was used to estimate the thickness of the passivating layers. Reflectance difference spectroscopy indicated a similar chemical origin for the two passivation methods. Both passivation techniques resulted in strong enhancements in the room temperature PL. PL intensity was observed to increase very rapidly with adsorbed P for both cases saturating at approximately 2 monolayers equivalent GaP coverage.

scholarly journals Neutron and high-resolution room-temperature X-ray data collection from crystallized lytic polysaccharide monooxygenase

2015 ◽  
Vol 71 (11) ◽  
pp. 1448-1452 ◽  
Author(s):  
John-Paul Bacik ◽  
Sophanit Mekasha ◽  
Zarah Forsberg ◽  
Andrey Kovalevsky ◽  
Jay C. Nix ◽  
...  
Keyword(s):  
High Resolution ◽  
Diffraction Data ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
Lytic Polysaccharide Monooxygenase ◽  
Data Set ◽  
X Ray ◽  
Processing Enzymes ◽  
Bacteria And Fungi ◽  
Polysaccharide Monooxygenase

Bacteria and fungi express lytic polysaccharide monooxgyenase (LPMO) enzymes that act in conjunction with canonical hydrolytic sugar-processing enzymes to rapidly convert polysaccharides such as chitin, cellulose and starch to single monosaccharide products. In order to gain a better understanding of the structure and oxidative mechanism of these enzymes, large crystals (1–3 mm3) of a chitin-processing LPMO from the Gram-positive soil bacteriumJonesia denitrificanswere grown and screened for their ability to diffract neutrons. In addition to the collection of neutron diffraction data, which were processed to 2.1 Å resolution, a high-resolution room-temperature X-ray diffraction data set was collected and processed to 1.1 Å resolution in space groupP212121. To our knowledge, this work marks the first successful neutron crystallographic experiment on an LPMO. Joint X-ray/neutron refinement of the resulting data will reveal new details of the structure and mechanism of this recently discovered class of enzymes.

PREPARATION OF LUMINESCENT PbWO4 MICROCRYSTALS WITH HIERARCHICAL STRUCTURES BY USING MICROWAVE IRRADIATION HEATING METHOD

2010 ◽  
Vol 24 (32) ◽  
pp. 3081-3087 ◽  
Author(s):  
GENGPING WAN ◽  
GUIZHEN WANG
Keyword(s):  
Electron Microscopy ◽  
Microwave Irradiation ◽  
Room Temperature ◽  
Hierarchical Structures ◽  
X Ray Diffraction ◽  
Lead Tungstate ◽  
Heating Method ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Scanning Electron

Lead tungstate ( PbWO 4) microcrystals with hierarchical structures have been successfully synthesized via a facile microwave irradiation heating method. The cetyltrimethylammonium bromine (CTAB) and microwave-heated power were found to play an important role in the morphological control of resulting PbWO 4 mirocrystals. The products were characterized by the techniques of powder X-ray diffraction and field-emission scanning electron microscopy. A growth mechanism of PbWO 4 microstructures was proposed. The luminescence properties of the final products were investigated and the as-prepared PbWO 4 microcrystals displayed a very unique room-temperature photoluminescence compared to the reported results.

EFFECT OF VANADIUM CONTENT ON PHOTOLUMINESCENCE AND MAGNETIC PROPERTIES OF DOPED ZnO THIN FILMS

2010 ◽  
Vol 24 (10) ◽  
pp. 945-951 ◽  
Author(s):  
LIWEI WANG ◽  
ZHENG XU ◽  
SULING ZHAO ◽  
LIFANG LU ◽  
FUJUN ZHANG
Keyword(s):  
Photoluminescence Spectrum ◽  
Room Temperature ◽  
Doping Concentration ◽  
Vanadium Content ◽  
X Ray Diffraction ◽  
Vanadium Concentration ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Room Temperature Photoluminescence Spectrum ◽  
Diffraction Patterns

ZnO : V thin films with different doping concentration (0%, 1.8%, 3.9%, 6.8%, 10%, and 13%) were fabricated by direct current magnetron sputtering. The X-ray diffraction patterns show that the wurzite structure changed with doping concentration. Furthermore, we could not find any vanadium cluster or phase separation in the X-ray diffraction patterns. The photoluminescence of ZnO : V with different vanadium concentration was investigated. The room temperature photoluminescence spectrum indicates that the films have purple band with 370 nm and the bands with 475 and 490 nm. The peak intensity of room temperature photoluminescence spectrum was affected by vanadium contents and its position remained stable. The intensity of band with 370 nm increases with raising the vanadium concentration and then decreases. The hysteresis behavior indicates that films were ferromagnetic at 50 K. Room temperature ferromagnetism was observed for the film with the doping concentration at 6.8%. However, in this case almost no hysteresis is noticeable. The results implied that the doping concentration and crystalline microstructure influence strongly the film's magnetic characteristics. Increasing the vanadium content in the film caused the degradation of the magnetic ordering.

Characterization of lattice mosaic ofa-plane GaN grown onr-plane sapphire by metalorganic vapor-phase epitaxy

2005 ◽  
Vol 892 ◽  
Author(s):  
Kazuhide Kusakabe ◽  
Shizutoshi Ando ◽  
Kazuhiro Ohkawa
Keyword(s):  
High Resolution ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Morphological Transition ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Sapphire Substrates

AbstractNonpolara-plane GaN films were grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy. The as-grown layers were studied by high-resolution x-ray diffraction. Thea-plane GaN lattice mosaic is orientation dependent as determined by x-ray rocking curve (XRC) measurements. The tilt mosaic measured with the c-axis within the scattering plane (c-mosaic) was greater than the mosaic measured with the m-axis within the scattering plane (m-mosaic). The mosaic along both azimuths decreased and thec-mosaic/m-mosaic ratio was increased with increase of growth temperature from 1050 °C to 1080 °C. The morphological transition was correlated to change in thea-plane GaN tilt mosaic measured by XRC.

Mn, Cu Doping and Optical Properties of Highly Crystalline Ultralong ZnS Nanowires

2007 ◽  
Vol 31 ◽  
pp. 114-116 ◽  
Author(s):  
N.D. Chien ◽  
H.V. Chung ◽  
P.T. Huy ◽  
Do Jin Kim ◽  
Maurizio Ferrari
Keyword(s):  
Room Temperature ◽  
Doping Concentration ◽  
Thermal Evaporation ◽  
X Ray Diffraction ◽  
Cu Doping ◽  
Mn Doping ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Single Crystal Structures ◽  
Scanning Electron

Manganese (Mn) and copper (Cu) doping of ZnS nanowires was achieved by thermal evaporation of Mn, Cu doped ZnS nanopowders. Field emission scanning electron microscopy, and X-ray diffraction studies of the obtained ZnS nanowires demonstrate that the nanowires are single crystal structures and have diameters about 30-200 nm and lengths up to 1 millimeter. Room temperature photoluminescence (PL) measurements show a common PL peak around 520 nm for all ZnS nanowires samples, while impurity-related emission band are observed in doped ZnS nanowires. The dependence of the PL intensity on Mn doping concentration has also been investigated. It is shown that for high Mn doping concentration (10%) in the starting ZnS nanopowders, new emission bands (orange-red and red bands) are observed from the ZnS:Mn nanowires products. The origins of these new emission bands are discussed and brought up for further discussion.

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